DE69300154T2 - Dünnfilmtransistor und Flüssigkristallanzeigevorrichtung mit aktiver Matrix. - Google Patents
Dünnfilmtransistor und Flüssigkristallanzeigevorrichtung mit aktiver Matrix.Info
- Publication number
- DE69300154T2 DE69300154T2 DE69300154T DE69300154T DE69300154T2 DE 69300154 T2 DE69300154 T2 DE 69300154T2 DE 69300154 T DE69300154 T DE 69300154T DE 69300154 T DE69300154 T DE 69300154T DE 69300154 T2 DE69300154 T2 DE 69300154T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- thin film
- crystal display
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14785992A JP2635885B2 (ja) | 1992-06-09 | 1992-06-09 | 薄膜トランジスタ及びアクティブマトリクス液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69300154D1 DE69300154D1 (de) | 1995-06-22 |
DE69300154T2 true DE69300154T2 (de) | 1995-12-07 |
Family
ID=15439868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69300154T Expired - Fee Related DE69300154T2 (de) | 1992-06-09 | 1993-06-03 | Dünnfilmtransistor und Flüssigkristallanzeigevorrichtung mit aktiver Matrix. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5416340A (de) |
EP (1) | EP0574186B1 (de) |
JP (1) | JP2635885B2 (de) |
KR (1) | KR970003918B1 (de) |
CN (1) | CN1031373C (de) |
DE (1) | DE69300154T2 (de) |
TW (1) | TW289106B (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3307150B2 (ja) * | 1995-03-20 | 2002-07-24 | ソニー株式会社 | アクティブマトリクス型表示装置 |
JP3512849B2 (ja) * | 1993-04-23 | 2004-03-31 | 株式会社東芝 | 薄膜トランジスタおよびそれを用いた表示装置 |
CN100529928C (zh) * | 1995-08-11 | 2009-08-19 | 夏普株式会社 | 透射型液晶显示器件及其制造方法 |
KR100430798B1 (ko) * | 1995-12-29 | 2004-07-19 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터기판 |
KR100495794B1 (ko) * | 1997-10-17 | 2005-09-28 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터 |
JP3607016B2 (ja) * | 1996-10-02 | 2005-01-05 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、並びに携帯型の情報処理端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、カメラおよびプロジェクター |
JP3425851B2 (ja) * | 1997-06-30 | 2003-07-14 | 日本電気株式会社 | 液晶表示装置用薄膜トランジスタ |
JP3308498B2 (ja) * | 1998-07-31 | 2002-07-29 | 富士通株式会社 | 液晶表示パネル |
JP2000111952A (ja) * | 1998-10-07 | 2000-04-21 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
US6323034B1 (en) | 1999-08-12 | 2001-11-27 | Industrial Technology Research Institute | Amorphous TFT process |
JP3420201B2 (ja) * | 1999-12-22 | 2003-06-23 | 日本電気株式会社 | 液晶表示装置 |
US20080299778A1 (en) * | 2007-05-30 | 2008-12-04 | Casio Computer Co., Ltd. | Silicon film dry etching method |
KR101475299B1 (ko) * | 2008-08-20 | 2014-12-23 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그의 제조 방법 |
TWI413839B (zh) * | 2009-03-24 | 2013-11-01 | Hannstar Display Corp | 液晶顯示器的畫素結構與其形成方法 |
US9312156B2 (en) * | 2009-03-27 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JP5532803B2 (ja) * | 2009-09-30 | 2014-06-25 | ソニー株式会社 | 半導体デバイスおよび表示装置 |
CN102005389A (zh) * | 2010-10-15 | 2011-04-06 | 信利半导体有限公司 | 降低背沟道刻蚀型tft漏电率的方法 |
KR101835525B1 (ko) * | 2011-02-17 | 2018-04-20 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
JP6035734B2 (ja) * | 2011-06-20 | 2016-11-30 | ソニー株式会社 | 半導体素子、表示装置および電子機器 |
US20140340607A1 (en) * | 2011-11-18 | 2014-11-20 | Sharp Kabushiki Kaisha | Semiconductor device, method for fabricating the semiconductor device and display device |
CN103022150B (zh) | 2012-12-25 | 2015-05-20 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其制备方法、阵列基板及显示装置 |
JP5860517B2 (ja) * | 2014-09-22 | 2016-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
DE3640174A1 (de) * | 1985-11-27 | 1987-06-04 | Sharp Kk | Duennfilm-transistor-anordnung |
JPS62171160A (ja) * | 1986-01-22 | 1987-07-28 | Sharp Corp | 薄膜トランジスタ |
US4857907A (en) * | 1986-04-30 | 1989-08-15 | 501 Sharp Kabushiki Kaisha | Liquid-crystal display device |
JP2523679B2 (ja) * | 1987-09-14 | 1996-08-14 | 松下電器産業株式会社 | 薄膜トランジスタおよびその製造方法 |
JPH01217421A (ja) * | 1988-02-26 | 1989-08-31 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法 |
JP2740813B2 (ja) * | 1988-02-26 | 1998-04-15 | セイコープレシジョン株式会社 | 非晶質シリコン薄膜トランジシタアレイ基板 |
JPH01219825A (ja) * | 1988-02-29 | 1989-09-01 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタ |
US5187551A (en) * | 1988-04-30 | 1993-02-16 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers |
GB2220792B (en) * | 1988-07-13 | 1991-12-18 | Seikosha Kk | Silicon thin film transistor and method for producing the same |
JPH0283981A (ja) * | 1988-09-21 | 1990-03-26 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH02271576A (ja) * | 1989-04-13 | 1990-11-06 | Nippon Steel Corp | 高耐圧薄膜トランジスター |
US5053347A (en) * | 1989-08-03 | 1991-10-01 | Industrial Technology Research Institute | Amorphous silicon thin film transistor with a depletion gate |
JPH0830825B2 (ja) * | 1990-04-20 | 1996-03-27 | シャープ株式会社 | アクティブマトリクス表示装置 |
JPH0475030A (ja) * | 1990-07-17 | 1992-03-10 | Sharp Corp | アクティブマトリクス表示装置 |
-
1992
- 1992-06-09 JP JP14785992A patent/JP2635885B2/ja not_active Expired - Lifetime
- 1992-12-17 TW TW081110128A patent/TW289106B/zh not_active IP Right Cessation
-
1993
- 1993-05-06 KR KR1019930007768A patent/KR970003918B1/ko not_active IP Right Cessation
- 1993-05-07 CN CN93105682A patent/CN1031373C/zh not_active Expired - Lifetime
- 1993-06-03 DE DE69300154T patent/DE69300154T2/de not_active Expired - Fee Related
- 1993-06-03 EP EP93304331A patent/EP0574186B1/de not_active Expired - Lifetime
- 1993-06-09 US US08/071,746 patent/US5416340A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1081023A (zh) | 1994-01-19 |
CN1031373C (zh) | 1996-03-20 |
US5416340A (en) | 1995-05-16 |
KR970003918B1 (ko) | 1997-03-22 |
JP2635885B2 (ja) | 1997-07-30 |
TW289106B (de) | 1996-10-21 |
JPH0651343A (ja) | 1994-02-25 |
KR940001457A (ko) | 1994-01-11 |
DE69300154D1 (de) | 1995-06-22 |
EP0574186A1 (de) | 1993-12-15 |
EP0574186B1 (de) | 1995-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AU OPTRONICS CORP., HSINCHU, TW |
|
8339 | Ceased/non-payment of the annual fee |