DE69331214D1 - Dynamische RAM-Einrichtung mit einem Stromversorgungssystem mit angepasster Vorspannung für Transistoren und Kondensatoren in einem Einbrenntestverfahren - Google Patents
Dynamische RAM-Einrichtung mit einem Stromversorgungssystem mit angepasster Vorspannung für Transistoren und Kondensatoren in einem EinbrenntestverfahrenInfo
- Publication number
- DE69331214D1 DE69331214D1 DE69331214T DE69331214T DE69331214D1 DE 69331214 D1 DE69331214 D1 DE 69331214D1 DE 69331214 T DE69331214 T DE 69331214T DE 69331214 T DE69331214 T DE 69331214T DE 69331214 D1 DE69331214 D1 DE 69331214D1
- Authority
- DE
- Germany
- Prior art keywords
- burn
- supply system
- power supply
- switching transistors
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4262323A JP2768172B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69331214D1 true DE69331214D1 (de) | 2002-01-10 |
DE69331214T2 DE69331214T2 (de) | 2002-07-25 |
Family
ID=17374179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69331214T Expired - Lifetime DE69331214T2 (de) | 1992-09-30 | 1993-09-29 | Dynamische RAM-Einrichtung mit einem Stromversorgungssystem mit angepasster Vorspannung für Transistoren und Kondensatoren in einem Einbrenntestverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5363333A (de) |
EP (1) | EP0590651B1 (de) |
JP (1) | JP2768172B2 (de) |
KR (1) | KR960001306B1 (de) |
DE (1) | DE69331214T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960012789B1 (ko) * | 1993-12-01 | 1996-09-24 | 현대전자산업 주식회사 | 부트스트랩 회로 |
JP3090833B2 (ja) * | 1993-12-28 | 2000-09-25 | 株式会社東芝 | 半導体記憶装置 |
JP3155879B2 (ja) * | 1994-02-25 | 2001-04-16 | 株式会社東芝 | 半導体集積回路装置 |
KR0119887B1 (ko) * | 1994-06-08 | 1997-10-30 | 김광호 | 반도체 메모리장치의 웨이퍼 번-인 테스트 회로 |
JPH0869693A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
JPH08171796A (ja) * | 1994-12-16 | 1996-07-02 | Toshiba Corp | 半導体記憶装置 |
KR0120606B1 (ko) * | 1994-12-31 | 1997-10-30 | 김주용 | 반도체 기억소자의 자동모드 선택 회로 |
US5629646A (en) * | 1995-03-21 | 1997-05-13 | Texas Instruments Incorporated | Apparatus and method for power reduction in dRAM units |
JP3633996B2 (ja) * | 1995-04-21 | 2005-03-30 | 株式会社ルネサステクノロジ | 半導体装置 |
KR0179845B1 (ko) * | 1995-10-12 | 1999-04-15 | 문정환 | 메모리의 기판전압 공급제어회로 |
JP4046382B2 (ja) * | 1997-03-27 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5949725A (en) * | 1997-08-20 | 1999-09-07 | Micron Technology, Inc. | Method and apparatus for reprogramming a supervoltage circuit |
JP3938229B2 (ja) * | 1997-10-13 | 2007-06-27 | 沖電気工業株式会社 | 半導体記憶装置 |
KR100257580B1 (ko) * | 1997-11-25 | 2000-06-01 | 윤종용 | 반도체 메모리 장치의 번-인 제어 회로 |
KR100498413B1 (ko) * | 1997-12-08 | 2005-09-08 | 삼성전자주식회사 | 반도체메모리장치의워드라인제어회로 |
US6119252A (en) * | 1998-02-10 | 2000-09-12 | Micron Technology | Integrated circuit test mode with externally forced reference voltage |
US6344959B1 (en) | 1998-05-01 | 2002-02-05 | Unitrode Corporation | Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage |
US6208542B1 (en) * | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
US5949726A (en) * | 1998-07-22 | 1999-09-07 | Vanguard International Semiconductor Corporation | Bias scheme to reduce burn-in test time for semiconductor memory while preventing junction breakdown |
JP4043142B2 (ja) * | 1999-05-18 | 2008-02-06 | 富士通株式会社 | メモリデバイス |
JP2000339958A (ja) * | 1999-05-25 | 2000-12-08 | Toshiba Corp | 半導体集積回路 |
JP3916837B2 (ja) * | 2000-03-10 | 2007-05-23 | 株式会社東芝 | 強誘電体メモリ |
JP2002157882A (ja) * | 2000-11-20 | 2002-05-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6560158B2 (en) * | 2001-04-27 | 2003-05-06 | Samsung Electronics Co., Ltd. | Power down voltage control method and apparatus |
JP3866594B2 (ja) * | 2002-03-15 | 2007-01-10 | Necエレクトロニクス株式会社 | 遅延回路と半導体記憶装置及び半導体記憶装置の制御方法 |
JP4228683B2 (ja) * | 2002-06-04 | 2009-02-25 | 沖電気工業株式会社 | 半導体装置 |
US6735145B1 (en) * | 2002-11-04 | 2004-05-11 | International Business Machines Corp. | Method and circuit for optimizing power consumption and performance of driver circuits |
US20050138497A1 (en) * | 2003-12-19 | 2005-06-23 | Hassan Mohamed A. | Apparatus and method for testing a flash memory unit |
US20050149785A1 (en) * | 2003-12-19 | 2005-07-07 | Hassan Mohamed A. | Apparatus and method for testing a flash memory unit using stress voltages |
CN1983851B (zh) * | 2006-06-16 | 2010-07-28 | 华为技术有限公司 | 一种使功放支持多功率的方法及射频模块 |
CN101369456B (zh) * | 2007-08-15 | 2013-02-13 | 旺宏电子股份有限公司 | 闪存的资料写入方法 |
US8072256B2 (en) | 2007-09-14 | 2011-12-06 | Mosaid Technologies Incorporated | Dynamic random access memory and boosted voltage producer therefor |
US7969235B2 (en) * | 2008-06-09 | 2011-06-28 | Sandisk Corporation | Self-adaptive multi-stage charge pump |
JP2011081855A (ja) * | 2009-10-05 | 2011-04-21 | Elpida Memory Inc | 半導体装置 |
JP5529352B2 (ja) * | 2010-11-01 | 2014-06-25 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | リング発振器を用いた記憶素子の読み出し |
DE102012208460A1 (de) * | 2012-05-21 | 2013-11-21 | Robert Bosch Gmbh | Umrichter für eine elektrische Maschine |
JP2016514338A (ja) | 2013-03-28 | 2016-05-19 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 記憶デバイス読み出し装置及び方法 |
US10234931B2 (en) | 2014-05-05 | 2019-03-19 | Empire Technology Development Llc | Electronic device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0059184A1 (de) * | 1980-09-08 | 1982-09-08 | Mostek Corporation | Funktionstest für halbleiterspeicher bei versorgungsspannungsgrenzwerten |
US4583157A (en) * | 1985-02-08 | 1986-04-15 | At&T Bell Laboratories | Integrated circuit having a variably boosted node |
JPS63181196A (ja) * | 1987-01-22 | 1988-07-26 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JPH01100788A (ja) * | 1987-10-13 | 1989-04-19 | Hitachi Ltd | 半導体集積回路装置 |
JPH01132156A (ja) * | 1987-11-17 | 1989-05-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0748318B2 (ja) * | 1988-03-14 | 1995-05-24 | 三菱電機株式会社 | 半導体記憶回路およびそのテスト方法 |
US5063304A (en) * | 1990-04-27 | 1991-11-05 | Texas Instruments Incorporated | Integrated circuit with improved on-chip power supply control |
US5283762A (en) * | 1990-05-09 | 1994-02-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device containing voltage converting circuit and operating method thereof |
JP2805973B2 (ja) * | 1990-05-11 | 1998-09-30 | 日本電気株式会社 | ブートストラップ回路 |
JP3425766B2 (ja) * | 1990-05-21 | 2003-07-14 | 株式会社日立製作所 | 半導体集積回路装置 |
KR100209449B1 (ko) * | 1990-05-21 | 1999-07-15 | 가나이 쓰토무 | 반도체 집적회로 장치 |
JP2945508B2 (ja) * | 1991-06-20 | 1999-09-06 | 三菱電機株式会社 | 半導体装置 |
US5268871A (en) * | 1991-10-03 | 1993-12-07 | International Business Machines Corporation | Power supply tracking regulator for a memory array |
-
1992
- 1992-09-30 JP JP4262323A patent/JP2768172B2/ja not_active Expired - Lifetime
-
1993
- 1993-09-28 KR KR1019930020085A patent/KR960001306B1/ko not_active IP Right Cessation
- 1993-09-29 EP EP93115753A patent/EP0590651B1/de not_active Expired - Lifetime
- 1993-09-29 DE DE69331214T patent/DE69331214T2/de not_active Expired - Lifetime
- 1993-09-30 US US08/129,375 patent/US5363333A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0590651B1 (de) | 2001-11-28 |
EP0590651A2 (de) | 1994-04-06 |
KR940007896A (ko) | 1994-04-28 |
DE69331214T2 (de) | 2002-07-25 |
KR960001306B1 (ko) | 1996-01-25 |
US5363333A (en) | 1994-11-08 |
JPH06111599A (ja) | 1994-04-22 |
EP0590651A3 (en) | 1997-02-12 |
JP2768172B2 (ja) | 1998-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: ELPIDA MEMORY, INC., TOKYO, JP |