DE69327571T2 - Flüssigkristallzelle mit aktiver Matrix - Google Patents
Flüssigkristallzelle mit aktiver MatrixInfo
- Publication number
- DE69327571T2 DE69327571T2 DE69327571T DE69327571T DE69327571T2 DE 69327571 T2 DE69327571 T2 DE 69327571T2 DE 69327571 T DE69327571 T DE 69327571T DE 69327571 T DE69327571 T DE 69327571T DE 69327571 T2 DE69327571 T2 DE 69327571T2
- Authority
- DE
- Germany
- Prior art keywords
- matrix
- cell
- liquid
- active
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28803992A JP2924506B2 (ja) | 1992-10-27 | 1992-10-27 | アクティブマトリックス型液晶表示装置の画素構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69327571D1 DE69327571D1 (de) | 2000-02-17 |
DE69327571T2 true DE69327571T2 (de) | 2000-08-17 |
Family
ID=17725042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69327571T Expired - Lifetime DE69327571T2 (de) | 1992-10-27 | 1993-10-27 | Flüssigkristallzelle mit aktiver Matrix |
Country Status (5)
Country | Link |
---|---|
US (1) | US5499123A (de) |
EP (1) | EP0604006B1 (de) |
JP (1) | JP2924506B2 (de) |
KR (1) | KR960014498B1 (de) |
DE (1) | DE69327571T2 (de) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
US5461501A (en) * | 1992-10-08 | 1995-10-24 | Hitachi, Ltd. | Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate |
US5643804A (en) | 1993-05-21 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a hybrid integrated circuit component having a laminated body |
US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
KR100343376B1 (ko) * | 1993-12-31 | 2002-11-23 | 고려화학 주식회사 | 반도체소자봉지용경화제의제조방법및이를함유하는반도체소자봉지용수지조성물 |
US6433361B1 (en) | 1994-04-29 | 2002-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method for forming the same |
JPH07302912A (ja) * | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP3312083B2 (ja) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2934875B2 (ja) * | 1994-09-30 | 1999-08-16 | カシオ計算機株式会社 | マトリックス型液晶表示装置 |
JP2777545B2 (ja) * | 1994-12-05 | 1998-07-16 | 株式会社フロンテック | アクティブマトリクス液晶表示素子 |
US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
FR2731526B1 (fr) * | 1995-03-09 | 1997-04-04 | Thomson Consumer Electronics | Ecran a cristaux liquides a angle de vue ameliore |
JP3349332B2 (ja) * | 1995-04-28 | 2002-11-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 反射式空間光変調素子配列及びその形成方法 |
JPH0926603A (ja) * | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
KR0171102B1 (ko) * | 1995-08-29 | 1999-03-20 | 구자홍 | 액정표시장치 구조 및 제조방법 |
JP3184771B2 (ja) * | 1995-09-14 | 2001-07-09 | キヤノン株式会社 | アクティブマトリックス液晶表示装置 |
JP3604106B2 (ja) * | 1995-09-27 | 2004-12-22 | シャープ株式会社 | 液晶表示装置 |
US5917563A (en) * | 1995-10-16 | 1999-06-29 | Sharp Kabushiki Kaisha | Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line |
JP2001125510A (ja) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型el表示装置 |
US6800875B1 (en) | 1995-11-17 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-luminescent display device with an organic leveling layer |
TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
JPH09146108A (ja) | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
TW309633B (de) * | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
US6225218B1 (en) | 1995-12-20 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
US5782665A (en) * | 1995-12-29 | 1998-07-21 | Xerox Corporation | Fabricating array with storage capacitor between cell electrode and dark matrix |
US6449024B1 (en) * | 1996-01-26 | 2002-09-10 | Semiconductor Energy Laboratory Co., Inc. | Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index |
JP3126661B2 (ja) | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US6005648A (en) * | 1996-06-25 | 1999-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
JPH10115840A (ja) * | 1996-10-08 | 1998-05-06 | Casio Comput Co Ltd | マトリックス型液晶表示装置 |
JP3725266B2 (ja) | 1996-11-07 | 2005-12-07 | 株式会社半導体エネルギー研究所 | 配線形成方法 |
JP3454340B2 (ja) * | 1996-11-22 | 2003-10-06 | シャープ株式会社 | 液晶表示装置 |
US6088070A (en) | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
JPH10239698A (ja) * | 1997-02-25 | 1998-09-11 | Sharp Corp | 液晶表示装置 |
JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US6069405A (en) * | 1997-08-12 | 2000-05-30 | Thomson Licensing S.A. | High capacitance mirror driver cell |
JPH11243208A (ja) * | 1998-02-26 | 1999-09-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH11274509A (ja) * | 1998-03-26 | 1999-10-08 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び液晶表示装置 |
JP3941901B2 (ja) | 1998-04-28 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3433101B2 (ja) | 1998-06-03 | 2003-08-04 | 三洋電機株式会社 | 表示装置 |
US6313481B1 (en) | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
US6576924B1 (en) | 1999-02-12 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate |
US6777716B1 (en) | 1999-02-12 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and method of manufacturing therefor |
JP4860293B2 (ja) * | 1999-02-12 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1031873A3 (de) | 1999-02-23 | 2005-02-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US7821065B2 (en) * | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
US6531993B1 (en) | 1999-03-05 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type display device |
US6306694B1 (en) | 1999-03-12 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device |
US6690434B1 (en) | 1999-03-15 | 2004-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal display device |
US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
US6680487B1 (en) | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
JP4298131B2 (ja) * | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP3826618B2 (ja) * | 1999-05-18 | 2006-09-27 | ソニー株式会社 | 液晶表示装置 |
US6630977B1 (en) * | 1999-05-20 | 2003-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor formed around contact hole |
JP4651777B2 (ja) * | 1999-06-02 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4666723B2 (ja) | 1999-07-06 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
JP2001175198A (ja) | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US7071041B2 (en) * | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7525165B2 (en) * | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6995753B2 (en) | 2000-06-06 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of manufacturing the same |
JP2002072963A (ja) | 2000-06-12 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 発光モジュールおよびその駆動方法並びに光センサ |
US7456911B2 (en) * | 2000-08-14 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4739510B2 (ja) * | 2000-12-15 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6828584B2 (en) * | 2001-05-18 | 2004-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6897477B2 (en) | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
JP5046445B2 (ja) * | 2001-07-31 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4798907B2 (ja) | 2001-09-26 | 2011-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6737302B2 (en) * | 2001-10-31 | 2004-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for field-effect transistor |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
TWI270919B (en) * | 2002-04-15 | 2007-01-11 | Semiconductor Energy Lab | Display device and method of fabricating the same |
JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
JP4506133B2 (ja) * | 2002-10-31 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4095518B2 (ja) | 2002-10-31 | 2008-06-04 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4561552B2 (ja) * | 2005-09-16 | 2010-10-13 | エプソンイメージングデバイス株式会社 | 液晶装置、液晶装置の製造方法、及び、電子機器 |
JP2007108513A (ja) * | 2005-10-14 | 2007-04-26 | Koninkl Philips Electronics Nv | 液晶表示装置およびその製造方法 |
JP4818839B2 (ja) | 2006-07-19 | 2011-11-16 | 株式会社 日立ディスプレイズ | 液晶表示装置及びその製造方法 |
JP4628393B2 (ja) * | 2007-04-24 | 2011-02-09 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶表示装置の作製方法 |
US10690978B2 (en) | 2018-05-28 | 2020-06-23 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Array substrate, display panel, and display |
CN108761939A (zh) * | 2018-05-28 | 2018-11-06 | 武汉华星光电技术有限公司 | 阵列基板、显示面板及显示器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6045219A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | アクテイブマトリクス型表示装置 |
JP2620240B2 (ja) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | 液晶表示装置 |
JP2536766B2 (ja) * | 1987-08-11 | 1996-09-18 | 旭硝子株式会社 | アクティブマトリックス型表示素子 |
JPH0816756B2 (ja) * | 1988-08-10 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
DE69022010T2 (de) * | 1989-12-22 | 1996-04-18 | Philips Electronics Nv | Elektrooptische Anzeigevorrichtung mit aktiver Matrix und Speicherkondensatoren sowie Farbprojektionsapparat, der diese verwendet. |
US5305128A (en) * | 1989-12-22 | 1994-04-19 | North American Philips Corporation | Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
JPH0451121A (ja) * | 1990-06-18 | 1992-02-19 | Sharp Corp | アクティブマトリクス液晶表示装置 |
JP2616160B2 (ja) * | 1990-06-25 | 1997-06-04 | 日本電気株式会社 | 薄膜電界効果型トランジスタ素子アレイ |
JPH0465168A (ja) * | 1990-07-05 | 1992-03-02 | Hitachi Ltd | 薄膜トランジスタ |
KR940004322B1 (ko) * | 1991-09-05 | 1994-05-19 | 삼성전자 주식회사 | 액정표시장치 및 그 제조방법 |
WO1993011455A1 (en) * | 1991-11-29 | 1993-06-10 | Seiko Epson Corporation | Liquid crystal display and method of manufacturing same |
JPH05216067A (ja) * | 1992-02-04 | 1993-08-27 | Sony Corp | 薄膜トランジスタアレイ |
-
1992
- 1992-10-27 JP JP28803992A patent/JP2924506B2/ja not_active Expired - Lifetime
-
1993
- 1993-10-26 KR KR1019930022285A patent/KR960014498B1/ko not_active IP Right Cessation
- 1993-10-27 US US08/141,880 patent/US5499123A/en not_active Expired - Lifetime
- 1993-10-27 DE DE69327571T patent/DE69327571T2/de not_active Expired - Lifetime
- 1993-10-27 EP EP93308546A patent/EP0604006B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0604006A2 (de) | 1994-06-29 |
EP0604006B1 (de) | 2000-01-12 |
EP0604006A3 (de) | 1994-11-23 |
KR960014498B1 (ko) | 1996-10-16 |
JPH06138484A (ja) | 1994-05-20 |
KR940009922A (ko) | 1994-05-24 |
US5499123A (en) | 1996-03-12 |
JP2924506B2 (ja) | 1999-07-26 |
DE69327571D1 (de) | 2000-02-17 |
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