DE69026783D1 - Herstellen von einer selektiv niedergeschlagenen Schicht mit Anwendung von Alkylaluminiumhydrid - Google Patents

Herstellen von einer selektiv niedergeschlagenen Schicht mit Anwendung von Alkylaluminiumhydrid

Info

Publication number
DE69026783D1
DE69026783D1 DE69026783T DE69026783T DE69026783D1 DE 69026783 D1 DE69026783 D1 DE 69026783D1 DE 69026783 T DE69026783 T DE 69026783T DE 69026783 T DE69026783 T DE 69026783T DE 69026783 D1 DE69026783 D1 DE 69026783D1
Authority
DE
Germany
Prior art keywords
selectively deposited
aluminum
aluminum hydride
manufacture
alkyl aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026783T
Other languages
English (en)
Other versions
DE69026783T2 (de
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69026783D1 publication Critical patent/DE69026783D1/de
Publication of DE69026783T2 publication Critical patent/DE69026783T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69026783T 1989-09-26 1990-09-25 Herstellen von einer selektiv niedergeschlagenen Schicht mit Anwendung von Alkylaluminiumhydrid Expired - Fee Related DE69026783T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25002189 1989-09-26
JP2036198A JP2721023B2 (ja) 1989-09-26 1990-02-19 堆積膜形成法

Publications (2)

Publication Number Publication Date
DE69026783D1 true DE69026783D1 (de) 1996-06-05
DE69026783T2 DE69026783T2 (de) 1996-11-14

Family

ID=26375242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026783T Expired - Fee Related DE69026783T2 (de) 1989-09-26 1990-09-25 Herstellen von einer selektiv niedergeschlagenen Schicht mit Anwendung von Alkylaluminiumhydrid

Country Status (10)

Country Link
US (2) US5180687A (de)
EP (1) EP0420595B1 (de)
JP (1) JP2721023B2 (de)
KR (1) KR940010501B1 (de)
AT (1) ATE137605T1 (de)
DE (1) DE69026783T2 (de)
ES (1) ES2086375T3 (de)
MY (1) MY107418A (de)
PT (1) PT95430B (de)
SG (1) SG45388A1 (de)

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Also Published As

Publication number Publication date
EP0420595B1 (de) 1996-05-01
PT95430A (pt) 1991-05-22
MY107418A (en) 1995-12-30
DE69026783T2 (de) 1996-11-14
JPH03202471A (ja) 1991-09-04
US5180687A (en) 1993-01-19
KR910007084A (ko) 1991-04-30
KR940010501B1 (ko) 1994-10-24
ES2086375T3 (es) 1996-07-01
ATE137605T1 (de) 1996-05-15
SG45388A1 (en) 1998-01-16
PT95430B (pt) 1997-07-31
US5393699A (en) 1995-02-28
EP0420595A2 (de) 1991-04-03
JP2721023B2 (ja) 1998-03-04
EP0420595A3 (en) 1991-09-11

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