ES2086375T3 - Metodo para la formacion de una pelicula depositada que utiliza deposito selectivo con utilizacion de hidruro de alquil aluminio. - Google Patents

Metodo para la formacion de una pelicula depositada que utiliza deposito selectivo con utilizacion de hidruro de alquil aluminio.

Info

Publication number
ES2086375T3
ES2086375T3 ES90310506T ES90310506T ES2086375T3 ES 2086375 T3 ES2086375 T3 ES 2086375T3 ES 90310506 T ES90310506 T ES 90310506T ES 90310506 T ES90310506 T ES 90310506T ES 2086375 T3 ES2086375 T3 ES 2086375T3
Authority
ES
Spain
Prior art keywords
formation
deposited film
aluminum hydride
alkyl aluminum
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90310506T
Other languages
English (en)
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2086375T3 publication Critical patent/ES2086375T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

AL OFRECER UN METODO DE FORMACION DE PELICULA DEPOSITADA EN LA QUE EL ALUMINIO O EL METAL COMPUESTO DE PRINCIPALMENTE ALUMINIO DE BUENA CALIDAD SE DEPOSITA SELECTIVAMENTE DE ACUERDO CON EL METODO CVD QUE UTILIZA UN HYDRIDE DE ALUMINIO ALQUIL E HIDROGENO, Y LUEGO ALUMINIO PURO O UN METAL COMPUESTO DE EL ES DEPOSITADO NO SELECTIVAMENTE LO QUE HACE POSIBLE FORMAR UNA PELICULA ELECTROCONDUCTORA DE BUENA CALIDAD DENTRO DE PEQUEÑAS ABERTURAS EN UNA CAPA AISLANTE.
ES90310506T 1989-09-26 1990-09-25 Metodo para la formacion de una pelicula depositada que utiliza deposito selectivo con utilizacion de hidruro de alquil aluminio. Expired - Lifetime ES2086375T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25002189 1989-09-26
JP2036198A JP2721023B2 (ja) 1989-09-26 1990-02-19 堆積膜形成法

Publications (1)

Publication Number Publication Date
ES2086375T3 true ES2086375T3 (es) 1996-07-01

Family

ID=26375242

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90310506T Expired - Lifetime ES2086375T3 (es) 1989-09-26 1990-09-25 Metodo para la formacion de una pelicula depositada que utiliza deposito selectivo con utilizacion de hidruro de alquil aluminio.

Country Status (10)

Country Link
US (2) US5180687A (es)
EP (1) EP0420595B1 (es)
JP (1) JP2721023B2 (es)
KR (1) KR940010501B1 (es)
AT (1) ATE137605T1 (es)
DE (1) DE69026783T2 (es)
ES (1) ES2086375T3 (es)
MY (1) MY107418A (es)
PT (1) PT95430B (es)
SG (1) SG45388A1 (es)

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Also Published As

Publication number Publication date
ATE137605T1 (de) 1996-05-15
SG45388A1 (en) 1998-01-16
US5180687A (en) 1993-01-19
JP2721023B2 (ja) 1998-03-04
KR910007084A (ko) 1991-04-30
DE69026783D1 (de) 1996-06-05
US5393699A (en) 1995-02-28
MY107418A (en) 1995-12-30
EP0420595A3 (en) 1991-09-11
JPH03202471A (ja) 1991-09-04
PT95430A (pt) 1991-05-22
EP0420595A2 (en) 1991-04-03
PT95430B (pt) 1997-07-31
DE69026783T2 (de) 1996-11-14
EP0420595B1 (en) 1996-05-01
KR940010501B1 (ko) 1994-10-24

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