ES2081941T3 - Procedimiento para la formacion de una pelicula depositada por utilizacion de hidruro de alquil aluminio. - Google Patents

Procedimiento para la formacion de una pelicula depositada por utilizacion de hidruro de alquil aluminio.

Info

Publication number
ES2081941T3
ES2081941T3 ES90309800T ES90309800T ES2081941T3 ES 2081941 T3 ES2081941 T3 ES 2081941T3 ES 90309800 T ES90309800 T ES 90309800T ES 90309800 T ES90309800 T ES 90309800T ES 2081941 T3 ES2081941 T3 ES 2081941T3
Authority
ES
Spain
Prior art keywords
aluminum hydride
alkyl aluminum
procedure
formation
film deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90309800T
Other languages
English (en)
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006558A external-priority patent/JP2781239B2/ja
Priority claimed from JP2006557A external-priority patent/JP2831770B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2081941T3 publication Critical patent/ES2081941T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/937—Hillock prevention

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

UN PROCESO PARA CREAR UNA PELICULA DE AL DE BUENA CALIDAD SEGUN EL METODO CVD QUE UTILIZA LA REACCION ENTRE HIDRURO DE ALUMINIO DE ALQUILO E HIDROGENO, QUE ES UN EXCELENTE PROCESO DE FORMACION DE PELICULA DEPOSITADA TAMBIEN CAPAZ DE UNA DEPOSICION SELECTIVA DE AL.
ES90309800T 1989-09-09 1990-09-07 Procedimiento para la formacion de una pelicula depositada por utilizacion de hidruro de alquil aluminio. Expired - Lifetime ES2081941T3 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23392689 1989-09-09
JP23392489 1989-09-09
JP2006558A JP2781239B2 (ja) 1989-09-09 1990-01-16 堆積膜形成法
JP2006557A JP2831770B2 (ja) 1989-09-09 1990-01-16 堆積膜形成法

Publications (1)

Publication Number Publication Date
ES2081941T3 true ES2081941T3 (es) 1996-03-16

Family

ID=27454509

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90309800T Expired - Lifetime ES2081941T3 (es) 1989-09-09 1990-09-07 Procedimiento para la formacion de una pelicula depositada por utilizacion de hidruro de alquil aluminio.

Country Status (8)

Country Link
US (2) US5179042A (es)
EP (1) EP0425084B1 (es)
AT (1) ATE132543T1 (es)
DE (1) DE69024607T2 (es)
DK (1) DK0425084T3 (es)
ES (1) ES2081941T3 (es)
GR (1) GR3019282T3 (es)
PT (1) PT95232B (es)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
DE69120446T2 (de) 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
EP0460861B1 (en) * 1990-05-31 2001-09-19 Canon Kabushiki Kaisha Semiconductor device with improved wiring structure
DE69109366T2 (de) * 1990-05-31 1995-10-19 Canon Kk Verfahren zur Herstellung einer Halbleiteranordnung mit Gatestruktur.
ATE150585T1 (de) * 1990-05-31 1997-04-15 Canon Kk Verfahren zur herstellung einer halbleitervorrichtung mit einer verdrahtungsstruktur hoher dichte
JP2974376B2 (ja) * 1990-06-01 1999-11-10 キヤノン株式会社 半導体装置の製造方法
EP0465152B1 (en) * 1990-06-29 1996-03-20 Canon Kabushiki Kaisha Method for producing semiconductor device having alignment mark
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
JPH04221822A (ja) * 1990-12-21 1992-08-12 Kazuo Tsubouchi 堆積膜形成法
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
US5627345A (en) * 1991-10-24 1997-05-06 Kawasaki Steel Corporation Multilevel interconnect structure
US5317433A (en) * 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JP3092761B2 (ja) * 1991-12-02 2000-09-25 キヤノン株式会社 画像表示装置及びその製造方法
JP3222518B2 (ja) * 1991-12-26 2001-10-29 キヤノン株式会社 液体原料気化装置および薄膜形成装置
US6004885A (en) * 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device having a multi-layer interconnection structure.
KR100320364B1 (ko) * 1993-03-23 2002-04-22 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 금속배선및그의형성방법
US5429989A (en) * 1994-02-03 1995-07-04 Motorola, Inc. Process for fabricating a metallization structure in a semiconductor device
US5565381A (en) * 1994-08-01 1996-10-15 Microchip Technology Incorporated Method of removing sharp edges in a dielectric coating located above a semiconductor substrate and a semiconductor device formed by this method
JPH08148563A (ja) * 1994-11-22 1996-06-07 Nec Corp 半導体装置の多層配線構造体の形成方法
KR0161116B1 (ko) * 1995-01-06 1999-02-01 문정환 반도체 장치의 금속층 형성방법
US5650198A (en) * 1995-08-18 1997-07-22 The Regents Of The University Of California Defect reduction in the growth of group III nitrides
JP3695606B2 (ja) * 1996-04-01 2005-09-14 忠弘 大見 半導体装置及びその製造方法
US5783485A (en) * 1996-07-19 1998-07-21 Motorola, Inc. Process for fabricating a metallized interconnect
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US6156645A (en) * 1996-10-25 2000-12-05 Cypress Semiconductor Corporation Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature
US6222271B1 (en) * 1997-07-15 2001-04-24 Micron Technology, Inc. Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US5969423A (en) * 1997-07-15 1999-10-19 Micron Technology, Inc. Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
JPH11150084A (ja) 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
US6057238A (en) * 1998-03-20 2000-05-02 Micron Technology, Inc. Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US6187673B1 (en) 1998-09-03 2001-02-13 Micron Technology, Inc. Small grain size, conformal aluminum interconnects and method for their formation
US7485560B2 (en) * 2006-11-22 2009-02-03 Atomic Energy Council - Institute Of Nuclear Energy Research Method for fabricating crystalline silicon thin films
US8183145B2 (en) 2007-10-11 2012-05-22 International Business Machines Corporation Structure and methods of forming contact structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758112A (fr) * 1969-10-29 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices
JP2559030B2 (ja) * 1986-07-25 1996-11-27 日本電信電話株式会社 金属薄膜の製造方法
JPH01252776A (ja) * 1988-03-31 1989-10-09 Sony Corp 気相成長アルミニウム膜形成方法
JP2570839B2 (ja) * 1988-12-22 1997-01-16 日本電気株式会社 Ａ▲ｌ▼ーＣｕ合金薄膜形成方法
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Ａｌ薄膜の選択的形成方法
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
US5217756A (en) * 1990-06-08 1993-06-08 Nec Corporation Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same
EP0465264B1 (en) * 1990-07-06 1998-12-09 Kazuo Tsubouchi Metal film forming method

Also Published As

Publication number Publication date
ATE132543T1 (de) 1996-01-15
PT95232A (pt) 1991-05-22
US5179042A (en) 1993-01-12
PT95232B (pt) 1998-06-30
DE69024607T2 (de) 1996-06-13
EP0425084B1 (en) 1996-01-03
DE69024607D1 (de) 1996-02-15
GR3019282T3 (en) 1996-06-30
EP0425084A1 (en) 1991-05-02
US5328873A (en) 1994-07-12
DK0425084T3 (da) 1996-01-29

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