DK0425084T3 - Fremgangsmåde til dannelse af aflejret film ved anvendelse af alkylaluminiumhydrid - Google Patents
Fremgangsmåde til dannelse af aflejret film ved anvendelse af alkylaluminiumhydridInfo
- Publication number
- DK0425084T3 DK0425084T3 DK90309800.2T DK90309800T DK0425084T3 DK 0425084 T3 DK0425084 T3 DK 0425084T3 DK 90309800 T DK90309800 T DK 90309800T DK 0425084 T3 DK0425084 T3 DK 0425084T3
- Authority
- DK
- Denmark
- Prior art keywords
- aluminum hydride
- deposited film
- alkyl aluminum
- forming deposited
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/937—Hillock prevention
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23392689 | 1989-09-09 | ||
JP23392489 | 1989-09-09 | ||
JP2006558A JP2781239B2 (ja) | 1989-09-09 | 1990-01-16 | 堆積膜形成法 |
JP2006557A JP2831770B2 (ja) | 1989-09-09 | 1990-01-16 | 堆積膜形成法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0425084T3 true DK0425084T3 (da) | 1996-01-29 |
Family
ID=27454509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK90309800.2T DK0425084T3 (da) | 1989-09-09 | 1990-09-07 | Fremgangsmåde til dannelse af aflejret film ved anvendelse af alkylaluminiumhydrid |
Country Status (8)
Country | Link |
---|---|
US (2) | US5179042A (da) |
EP (1) | EP0425084B1 (da) |
AT (1) | ATE132543T1 (da) |
DE (1) | DE69024607T2 (da) |
DK (1) | DK0425084T3 (da) |
ES (1) | ES2081941T3 (da) |
GR (1) | GR3019282T3 (da) |
PT (1) | PT95232B (da) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PT95232B (pt) * | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
SG46606A1 (en) * | 1990-05-31 | 1998-02-20 | Conon Kabushiki Kaisha | Device seperation structure and semiconductor device improved in wiring structure |
EP0460857B1 (en) * | 1990-05-31 | 1997-03-19 | Canon Kabushiki Kaisha | Method for producing a semiconductor device with a high density wiring structure |
ATE122176T1 (de) * | 1990-05-31 | 1995-05-15 | Canon Kk | Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur. |
JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2974376B2 (ja) * | 1990-06-01 | 1999-11-10 | キヤノン株式会社 | 半導体装置の製造方法 |
DE69118031T2 (de) * | 1990-06-29 | 1996-09-05 | Canon Kk | Verfahren zum Herstellen einer Halbleiteranordnung mit einer Ausrichtungsmarke |
US5273775A (en) * | 1990-09-12 | 1993-12-28 | Air Products And Chemicals, Inc. | Process for selectively depositing copper aluminum alloy onto a substrate |
JPH04221822A (ja) * | 1990-12-21 | 1992-08-12 | Kazuo Tsubouchi | 堆積膜形成法 |
EP0498580A1 (en) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Method for depositing a metal film containing aluminium by use of alkylaluminium halide |
JPH04346231A (ja) * | 1991-05-23 | 1992-12-02 | Canon Inc | 半導体装置の製造方法 |
US5627345A (en) * | 1991-10-24 | 1997-05-06 | Kawasaki Steel Corporation | Multilevel interconnect structure |
US5317433A (en) * | 1991-12-02 | 1994-05-31 | Canon Kabushiki Kaisha | Image display device with a transistor on one side of insulating layer and liquid crystal on the other side |
JP3092761B2 (ja) * | 1991-12-02 | 2000-09-25 | キヤノン株式会社 | 画像表示装置及びその製造方法 |
US5447568A (en) * | 1991-12-26 | 1995-09-05 | Canon Kabushiki Kaisha | Chemical vapor deposition method and apparatus making use of liquid starting material |
JP3222518B2 (ja) * | 1991-12-26 | 2001-10-29 | キヤノン株式会社 | 液体原料気化装置および薄膜形成装置 |
US6004885A (en) | 1991-12-26 | 1999-12-21 | Canon Kabushiki Kaisha | Thin film formation on semiconductor wafer |
JP3048749B2 (ja) * | 1992-04-28 | 2000-06-05 | キヤノン株式会社 | 薄膜形成方法 |
US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
JP3334911B2 (ja) * | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
JPH06196419A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 化学気相堆積装置及びそれによる半導体装置の製造方法 |
EP0608628A3 (en) * | 1992-12-25 | 1995-01-18 | Kawasaki Steel Co | Method for manufacturing a semiconductor device having a multi-layer interconnection structure. |
KR100320364B1 (ko) * | 1993-03-23 | 2002-04-22 | 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 | 금속배선및그의형성방법 |
US5429989A (en) * | 1994-02-03 | 1995-07-04 | Motorola, Inc. | Process for fabricating a metallization structure in a semiconductor device |
US5565381A (en) * | 1994-08-01 | 1996-10-15 | Microchip Technology Incorporated | Method of removing sharp edges in a dielectric coating located above a semiconductor substrate and a semiconductor device formed by this method |
JPH08148563A (ja) * | 1994-11-22 | 1996-06-07 | Nec Corp | 半導体装置の多層配線構造体の形成方法 |
KR0161116B1 (ko) * | 1995-01-06 | 1999-02-01 | 문정환 | 반도체 장치의 금속층 형성방법 |
US5650198A (en) * | 1995-08-18 | 1997-07-22 | The Regents Of The University Of California | Defect reduction in the growth of group III nitrides |
JP3695606B2 (ja) * | 1996-04-01 | 2005-09-14 | 忠弘 大見 | 半導体装置及びその製造方法 |
US5783485A (en) * | 1996-07-19 | 1998-07-21 | Motorola, Inc. | Process for fabricating a metallized interconnect |
US6309971B1 (en) | 1996-08-01 | 2001-10-30 | Cypress Semiconductor Corporation | Hot metallization process |
US6156645A (en) * | 1996-10-25 | 2000-12-05 | Cypress Semiconductor Corporation | Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature |
US5969423A (en) * | 1997-07-15 | 1999-10-19 | Micron Technology, Inc. | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition |
US6222271B1 (en) * | 1997-07-15 | 2001-04-24 | Micron Technology, Inc. | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
JPH11150084A (ja) | 1997-09-12 | 1999-06-02 | Canon Inc | 半導体装置および基板上への非晶質窒化硅素チタンの形成方法 |
US6057238A (en) * | 1998-03-20 | 2000-05-02 | Micron Technology, Inc. | Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
US6187673B1 (en) | 1998-09-03 | 2001-02-13 | Micron Technology, Inc. | Small grain size, conformal aluminum interconnects and method for their formation |
US7485560B2 (en) * | 2006-11-22 | 2009-02-03 | Atomic Energy Council - Institute Of Nuclear Energy Research | Method for fabricating crystalline silicon thin films |
US8183145B2 (en) | 2007-10-11 | 2012-05-22 | International Business Machines Corporation | Structure and methods of forming contact structures |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758112A (fr) * | 1969-10-29 | 1971-04-01 | Sumitomo Chemical Co | Procede de depot d'aluminium |
GB2038883B (en) * | 1978-11-09 | 1982-12-08 | Standard Telephones Cables Ltd | Metallizing semiconductor devices |
JP2559030B2 (ja) * | 1986-07-25 | 1996-11-27 | 日本電信電話株式会社 | 金属薄膜の製造方法 |
JPH01252776A (ja) * | 1988-03-31 | 1989-10-09 | Sony Corp | 気相成長アルミニウム膜形成方法 |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
PT95232B (pt) * | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
US5217756A (en) * | 1990-06-08 | 1993-06-08 | Nec Corporation | Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same |
DE69130595T2 (de) * | 1990-07-06 | 1999-05-27 | Tsubochi Kazuo | Verfahren zur Herstellung einer Metallschicht |
-
1990
- 1990-09-06 PT PT95232A patent/PT95232B/pt not_active IP Right Cessation
- 1990-09-07 ES ES90309800T patent/ES2081941T3/es not_active Expired - Lifetime
- 1990-09-07 US US07/578,672 patent/US5179042A/en not_active Expired - Lifetime
- 1990-09-07 AT AT90309800T patent/ATE132543T1/de not_active IP Right Cessation
- 1990-09-07 DE DE69024607T patent/DE69024607T2/de not_active Expired - Fee Related
- 1990-09-07 DK DK90309800.2T patent/DK0425084T3/da active
- 1990-09-07 EP EP90309800A patent/EP0425084B1/en not_active Expired - Lifetime
-
1992
- 1992-06-23 US US07/902,829 patent/US5328873A/en not_active Expired - Lifetime
-
1996
- 1996-03-12 GR GR960400685T patent/GR3019282T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
DE69024607T2 (de) | 1996-06-13 |
US5179042A (en) | 1993-01-12 |
US5328873A (en) | 1994-07-12 |
EP0425084A1 (en) | 1991-05-02 |
DE69024607D1 (de) | 1996-02-15 |
PT95232B (pt) | 1998-06-30 |
PT95232A (pt) | 1991-05-22 |
GR3019282T3 (en) | 1996-06-30 |
ATE132543T1 (de) | 1996-01-15 |
EP0425084B1 (en) | 1996-01-03 |
ES2081941T3 (es) | 1996-03-16 |
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