JP2018532271A - インターコネクトのための選択的なボトムアップ式金属フィーチャ充填 - Google Patents
インターコネクトのための選択的なボトムアップ式金属フィーチャ充填 Download PDFInfo
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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Abstract
Description
Claims (20)
- 半導体デバイスを形成する方法であって、
誘電体層表面及び凹状フィーチャの底面に金属含有表面を有する該凹状フィーチャを有するパターニングされた誘電体層を含む基板を提供することと、
前記誘電体層表面を、疎水性官能基を含む反応ガスと反応させて、疎水性誘電体層表面を形成することと、
前記疎水性誘電体層表面への金属の付着を妨げるボトムアップ式気相付着プロセスにおいて、前記凹状フィーチャを該金属で少なくとも実質的に充填することと、を含む方法。 - 前記反応ガスはシリコン含有ガスを含む、請求項1に記載の方法。
- 前記シリコン含有ガスは、アルキルシラン、アルコキシシラン、アルキルアルコキシシラン、アルキルシロキサン、アルコキシシロキサン、アルキルアルコキシシロキサン、アリールシラン、アシルシラン、アリールシロキサン、アシルシロキサン、シラザン、及びそれらの組み合わせをからなる群から選択される、請求項2に記載の方法。
- 前記反応ガスは、ジメチルシランジメチルアミン(DMSDMA)、トリメチルシランジメチルアミン(TMSDMA)、ビス(ジメチルアミノ)ジメチルシラン(BDMADMS)、N,O−ビストリメチルシリルトリフルオロアセトアミド(BSTFA)、トリメチルシリル−ピロール(TMS−pyrrole)、及びそれらの組み合わせからなる群から選択される、請求項2に記載の方法。
- 前記金属含有表面は、銅(Cu)、タングステン(W)、ルテニウム(Ru)、コバルト(Co)、窒化チタン(TiN)、窒化タンタル(TaN)、又はそれらの組み合わせを含む、請求項1に記載の方法。
- 前記金属は、ルテニウム(Ru)、コバルト(Co)、アルミニウム(Al)、イリジウム(Ir)、ロジウム(Rh)、オスミウム(Os)、パラジウム(Pd)、白金(Pt)、ニッケル(Ni)、及びそれらの組み合わせからなる群から選択される、請求項1に記載の方法。
- 前記金属は、化学蒸着(CVD)又は原子層堆積(ALD)によって付着される、請求項1に記載の方法。
- 前記金属は、ルテニウム(Ru)金属を含み、該Ru金属は、Ru3(CO)12前駆体蒸気及びCOキャリアガスを含む付着ガスを使用して付着される、請求項1に記載の方法。
- 前記金属は、ルテニウム(Ru)金属を含み、該Ru金属は、Ru3(CO)12、(2,4−ジメチルペンタジエニル)(エチルシクロペンタジエニル)ルテニウム(Ru(DMPD)(EtCp))、ビス(2,4−ジメチルペンタジエニル)ルテニウム(Ru(DMPD)2)、(2,4−ジメチルペンタジエニル)(メチルシクロペンタジエニル)ルテニウム、又はそれらの2つ以上の組み合わせを含む付着ガスを使用して付着される、請求項1に記載の方法。
- 前記金属は、コバルト(Co)金属を含む、請求項1に記載の方法。
- 前記金属は、コバルト(Co)金属を含み、該Co金属は、Co2(CO)8、Co4(CO)12、CoCp(CO)2、Co(CO)3(NO)、Co2(CO)6(HCCtBu)、Co(acac)2、Co(Cp)2、Co((Me5Cp)2)、Co(EtCp)2、コバルト(II)ヘキサフルオロアセチルアセトナート水和物、コバルトトリス(2,2,6,6−テトラメチル−3,5−ヘプタンジオナート)、コバルト(III)アセチルアセトナート、ビス(N,N’−ジイソプロピルアセトアミジナート)コバルト、トリカルボニルアリルコバルト、又はそれらの2つ以上の組み合わせを含む付着ガスを使用して付着される、請求項1に記載の方法。
- 前記凹状フィーチャを前記金属で少なくとも実質的に充填することは、前記凹状フィーチャを前記金属で過剰充填する、請求項1に記載の方法。
- 前記凹状フィーチャの直径は、約10nmと約25nmの間である、請求項1に記載の方法。
- 前記誘電体層は、low−k誘電体材料を含む、請求項1に記載の方法。
- 半導体デバイスを形成する方法であって、
誘電体層表面及び凹状フィーチャの底面に金属含有表面を有する該凹状フィーチャを有するパターニングされた誘電体層を含む基板を提供することと
前記誘電体層表面を、疎水性官能基を含むシリコン含有反応ガスと反応させて、疎水性誘電体層表面を形成することと、
前記疎水性誘電体層表面へのルテニウム(Ru)金属の付着を妨げるボトムアップ式気相付着プロセスにおいて、前記凹状フィーチャを該Ru金属で少なくとも実質的に充填することであって、該Ru金属は、Ru3(CO)12前駆体蒸気及びCOキャリアガスを含む付着ガスを使用して化学蒸着プロセスで付着される、充填することと、を含む方法。 - 前記金属含有表面は、銅(Cu)、タングステン(W)、ルテニウム(Ru)、コバルト(Co)、窒化チタン(TiN)、窒化タンタル(TaN)、又はそれらの組み合わせを含む、請求項15に記載の方法。
- 前記凹状フィーチャを前記Ru金属で少なくとも実質的に充填することは、前記凹状フィーチャを前記Ru金属で過剰充填する、請求項15に記載の方法。
- 半導体デバイスを形成する方法であって、
誘電体層表面及び凹状フィーチャの底面に金属含有表面を有する該凹状フィーチャを有するパターニングされた誘電体層を含む基板を提供することと、
前記誘電体層表面を、疎水性官能基を含むシリコン含有反応ガスと反応させて、疎水性誘電体層表面を形成することと、
前記疎水性誘電体層表面へのコバルト(Co)金属の付着を妨げるボトムアップ式気相付着プロセスにおいて、前記凹状フィーチャを該Co金属で少なくとも実質的に充填することであって、該Co金属は、Co含有前駆体蒸気を含む付着ガスを使用して化学蒸着プロセスで付着される、充填することと、を含む方法。 - 前記付着ガスは、Co2(CO)8、Co4(CO)12、CoCp(CO)2、Co(CO)3(NO)、Co2(CO)6(HCCtBu)、Co(acac)2、Co(Cp)2、Co((Me5Cp)2)、Co(EtCp)2、コバルト(II)ヘキサフルオロアセチルアセトナート水和物、コバルトトリス(2,2,6,6−テトラメチル−3,5−ヘプタンジオナート)、コバルト(III)アセチルアセトナート、ビス(N,N’−ジイソプロピルアセトアミジナート)コバルト、トリカルボニルアリルコバルト、又はそれらの2つ以上の組み合わせを含む、請求項18に記載の方法。
- 前記凹状フィーチャを前記Co金属で少なくとも実質的に充填することは、前記凹状フィーチャを前記Co金属で過剰充填する、請求項18に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US201562242167P | 2015-10-15 | 2015-10-15 | |
US62/242,167 | 2015-10-15 | ||
PCT/US2016/057181 WO2017066671A1 (en) | 2015-10-15 | 2016-10-14 | Selective bottom-up metal feature filling for interconnects |
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JP2018532271A true JP2018532271A (ja) | 2018-11-01 |
JP2018532271A5 JP2018532271A5 (ja) | 2019-08-15 |
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US (1) | US10014213B2 (ja) |
JP (1) | JP2018532271A (ja) |
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JPWO2021015030A1 (ja) * | 2019-07-25 | 2021-01-28 | ||
JP2021520637A (ja) * | 2018-04-03 | 2021-08-19 | 東京エレクトロン株式会社 | 完全自己整合方式を使用するサブトラクティブ相互接続形成 |
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US10580644B2 (en) | 2016-07-11 | 2020-03-03 | Tokyo Electron Limited | Method and apparatus for selective film deposition using a cyclic treatment |
US10256144B2 (en) | 2017-04-26 | 2019-04-09 | Applied Materials, Inc. | Process integration approach of selective tungsten via fill |
US11404313B2 (en) | 2017-04-26 | 2022-08-02 | Applied Materials, Inc. | Selective tungsten deposition at low temperatures |
SG11202100492RA (en) * | 2018-07-17 | 2021-03-30 | Kokusai Electric Corp | Method of manufacturing semiconductor device, substrate processing apparatus, and program |
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US10014213B2 (en) | 2018-07-03 |
US20170110368A1 (en) | 2017-04-20 |
WO2017066671A1 (en) | 2017-04-20 |
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