DE69026566T2 - Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von Alkalimetallaluminiumhydride - Google Patents
Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von AlkalimetallaluminiumhydrideInfo
- Publication number
- DE69026566T2 DE69026566T2 DE69026566T DE69026566T DE69026566T2 DE 69026566 T2 DE69026566 T2 DE 69026566T2 DE 69026566 T DE69026566 T DE 69026566T DE 69026566 T DE69026566 T DE 69026566T DE 69026566 T2 DE69026566 T2 DE 69026566T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- aluminum
- main component
- layer containing
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910052783 alkali metal Inorganic materials 0.000 title 1
- -1 alkali metal aluminum hydrides Chemical class 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000000654 additive Substances 0.000 abstract 3
- 230000000996 additive effect Effects 0.000 abstract 3
- 125000005234 alkyl aluminium group Chemical group 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25001489A JP2670152B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
JP1250013A JP2801285B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
JP25001189A JP2670151B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
JP1250012A JP2721013B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026566D1 DE69026566D1 (de) | 1996-05-23 |
DE69026566T2 true DE69026566T2 (de) | 1996-11-14 |
Family
ID=27478182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026566T Expired - Fee Related DE69026566T2 (de) | 1989-09-26 | 1990-09-25 | Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von Alkalimetallaluminiumhydride |
Country Status (8)
Country | Link |
---|---|
US (1) | US5154949A (de) |
EP (1) | EP0420594B1 (de) |
KR (1) | KR940007075B1 (de) |
AT (1) | ATE137063T1 (de) |
DE (1) | DE69026566T2 (de) |
MY (1) | MY107403A (de) |
PT (1) | PT95434B (de) |
SG (1) | SG43924A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
DE69120446T2 (de) | 1990-02-19 | 1996-11-14 | Canon Kk | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
MY107475A (en) * | 1990-05-31 | 1995-12-30 | Canon Kk | Semiconductor device and method for producing the same. |
EP0460857B1 (de) * | 1990-05-31 | 1997-03-19 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte |
EP0459772B1 (de) * | 1990-05-31 | 1996-11-20 | Canon Kabushiki Kaisha | Verfahren zur Verdrahtung einer Halbleiterschaltung |
JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2974376B2 (ja) * | 1990-06-01 | 1999-11-10 | キヤノン株式会社 | 半導体装置の製造方法 |
EP0498580A1 (de) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer abgeschiedenen Metallschicht, die Aluminium enthält, mit Anwendung von Alkylaluminiumhalid |
JPH0521385A (ja) * | 1991-07-10 | 1993-01-29 | Nippon Steel Corp | アルミニウム合金薄膜の製造方法 |
US5627345A (en) * | 1991-10-24 | 1997-05-06 | Kawasaki Steel Corporation | Multilevel interconnect structure |
US6004885A (en) * | 1991-12-26 | 1999-12-21 | Canon Kabushiki Kaisha | Thin film formation on semiconductor wafer |
US5447568A (en) * | 1991-12-26 | 1995-09-05 | Canon Kabushiki Kaisha | Chemical vapor deposition method and apparatus making use of liquid starting material |
US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
US5403620A (en) * | 1992-10-13 | 1995-04-04 | Regents Of The University Of California | Catalysis in organometallic CVD of thin metal films |
US5358901A (en) * | 1993-03-01 | 1994-10-25 | Motorola, Inc. | Process for forming an intermetallic layer |
US5654245A (en) * | 1993-03-23 | 1997-08-05 | Sharp Microelectronics Technology, Inc. | Implantation of nucleating species for selective metallization and products thereof |
JPH0710935U (ja) * | 1993-07-24 | 1995-02-14 | ヤマハ株式会社 | 縦型熱処理炉 |
JPH07159974A (ja) * | 1993-12-09 | 1995-06-23 | Ryoden Semiconductor Syst Eng Kk | パターン転写マスクおよびその製造方法 |
US5650198A (en) * | 1995-08-18 | 1997-07-22 | The Regents Of The University Of California | Defect reduction in the growth of group III nitrides |
US6077571A (en) * | 1995-12-19 | 2000-06-20 | The Research Foundation Of State University Of New York | Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation |
US6040613A (en) | 1996-01-19 | 2000-03-21 | Micron Technology, Inc. | Antireflective coating and wiring line stack |
JP3695606B2 (ja) * | 1996-04-01 | 2005-09-14 | 忠弘 大見 | 半導体装置及びその製造方法 |
US8053274B2 (en) * | 2008-09-30 | 2011-11-08 | Stion Corporation | Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials |
US9145612B2 (en) * | 2012-07-06 | 2015-09-29 | Applied Materials, Inc. | Deposition of N-metal films comprising aluminum alloys |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2559030B2 (ja) * | 1986-07-25 | 1996-11-27 | 日本電信電話株式会社 | 金属薄膜の製造方法 |
JPH01252776A (ja) * | 1988-03-31 | 1989-10-09 | Sony Corp | 気相成長アルミニウム膜形成方法 |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
-
1990
- 1990-09-25 EP EP90310505A patent/EP0420594B1/de not_active Expired - Lifetime
- 1990-09-25 DE DE69026566T patent/DE69026566T2/de not_active Expired - Fee Related
- 1990-09-25 AT AT90310505T patent/ATE137063T1/de not_active IP Right Cessation
- 1990-09-25 SG SG1996005608A patent/SG43924A1/en unknown
- 1990-09-26 PT PT95434A patent/PT95434B/pt not_active IP Right Cessation
- 1990-09-26 MY MYPI90001664A patent/MY107403A/en unknown
- 1990-09-26 KR KR1019900015301A patent/KR940007075B1/ko not_active IP Right Cessation
-
1992
- 1992-02-28 US US07/841,307 patent/US5154949A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
PT95434A (pt) | 1991-05-22 |
SG43924A1 (en) | 1997-11-14 |
US5154949A (en) | 1992-10-13 |
KR940007075B1 (ko) | 1994-08-04 |
KR910007093A (ko) | 1991-04-30 |
EP0420594A2 (de) | 1991-04-03 |
ATE137063T1 (de) | 1996-05-15 |
EP0420594B1 (de) | 1996-04-17 |
PT95434B (pt) | 1997-07-31 |
MY107403A (en) | 1995-11-30 |
DE69026566D1 (de) | 1996-05-23 |
EP0420594A3 (en) | 1991-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |