DE68927920T2 - Magnetronzerstäubungsanlage und -verfahren - Google Patents

Magnetronzerstäubungsanlage und -verfahren

Info

Publication number
DE68927920T2
DE68927920T2 DE68927920T DE68927920T DE68927920T2 DE 68927920 T2 DE68927920 T2 DE 68927920T2 DE 68927920 T DE68927920 T DE 68927920T DE 68927920 T DE68927920 T DE 68927920T DE 68927920 T2 DE68927920 T2 DE 68927920T2
Authority
DE
Germany
Prior art keywords
sputter
work station
substrates
plasma
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68927920T
Other languages
English (en)
Other versions
DE68927920T3 (de
DE68927920D1 (de
Inventor
Michael A Scobey
Richard Ian Seddon
James W Seeser
Russel R Austin
Paul M Lefabvre
Barry W Manley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Coating Laboratory Inc
Original Assignee
Optical Coating Laboratory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22550315&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68927920(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Optical Coating Laboratory Inc filed Critical Optical Coating Laboratory Inc
Publication of DE68927920D1 publication Critical patent/DE68927920D1/de
Application granted granted Critical
Publication of DE68927920T2 publication Critical patent/DE68927920T2/de
Publication of DE68927920T3 publication Critical patent/DE68927920T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0047Activation or excitation of reactive gases outside the coating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0073Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C23C14/0078Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/083Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10Glass or silica
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02Pretreatment of the material to be coated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Catching Or Destruction (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
DE68927920T 1988-02-08 1989-01-19 Magnetronzerstäubungsanlage und -verfahren Expired - Lifetime DE68927920T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US154177 1988-02-08
US07/154,177 US4851095A (en) 1988-02-08 1988-02-08 Magnetron sputtering apparatus and process

Publications (3)

Publication Number Publication Date
DE68927920D1 DE68927920D1 (de) 1997-05-07
DE68927920T2 true DE68927920T2 (de) 1997-07-17
DE68927920T3 DE68927920T3 (de) 2004-12-16

Family

ID=22550315

Family Applications (3)

Application Number Title Priority Date Filing Date
DE68929053T Expired - Lifetime DE68929053T2 (de) 1988-02-08 1989-01-19 Magnetronzerstäubungsanlage und -verfahren
DE68927920T Expired - Lifetime DE68927920T3 (de) 1988-02-08 1989-01-19 Magnetronzerstäubungsanlage und -verfahren
DE198989300521T Pending DE328257T1 (de) 1988-02-08 1989-01-19 Magnetronzerstaeubungsanlage und -verfahren.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68929053T Expired - Lifetime DE68929053T2 (de) 1988-02-08 1989-01-19 Magnetronzerstäubungsanlage und -verfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE198989300521T Pending DE328257T1 (de) 1988-02-08 1989-01-19 Magnetronzerstaeubungsanlage und -verfahren.

Country Status (7)

Country Link
US (1) US4851095A (de)
EP (2) EP0655515B2 (de)
JP (1) JP3064301B2 (de)
KR (1) KR920004846B1 (de)
AT (2) ATE183245T1 (de)
CA (1) CA1340651C (de)
DE (3) DE68929053T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10006121C1 (de) * 2000-02-11 2001-05-23 Sekurit Saint Gobain Deutsch Verfahren zum Verhindern einer rückseitigen Beschichtung von starren, insbesondere gebogenen Scheiben und Verwendung einer Transportvorrichtung

Families Citing this family (280)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124013A (en) * 1988-02-08 1992-06-23 Optical Coating Laboratory, Inc. High ratio planetary drive system and method for vacuum chamber
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US5268235A (en) * 1988-09-26 1993-12-07 The United States Of America As Represented By The Secretary Of Commerce Predetermined concentration graded alloys
US5158653A (en) * 1988-09-26 1992-10-27 Lashmore David S Method for production of predetermined concentration graded alloys
DE3920835C2 (de) * 1989-06-24 1997-12-18 Leybold Ag Einrichtung zum Beschichten von Substraten
EP0409451A1 (de) * 1989-07-18 1991-01-23 Optical Coating Laboratory, Inc. Verfahren zum Auftragen von dünnen optischen Schichten auf sowohl flachen als auch nicht flachen Substraten
GB8921666D0 (en) * 1989-09-26 1989-11-08 Peatgrange Ivd Limited Ion vapour deposition apparatus and method
ATE189272T1 (de) * 1989-11-13 2000-02-15 Optical Coating Laboratory Inc Geometrie und gestaltungen eines geräts zum magnetronzerstäuben
US5112644A (en) * 1990-03-08 1992-05-12 Optical Coating Laboratory, Inc. Horizontal precession tooling and method for tube rotation
US5246803A (en) * 1990-07-23 1993-09-21 Eastman Kodak Company Patterned dichroic filters for solid state electronic image sensors
JPH07116588B2 (ja) * 1990-08-08 1995-12-13 信越化学工業株式会社 X線リソグラフィ用マスクの透過体の製造方法
CA2059094C (en) * 1991-01-10 1997-06-03 Optical Coating Laboratory, Inc. High ratio planetary drive system for vacuum chamber
US5660693A (en) * 1991-01-18 1997-08-26 Applied Vision Limited Ion vapour deposition apparatus and method
US5154810A (en) * 1991-01-29 1992-10-13 Optical Coating Laboratory, Inc. Thin film coating and method
DE4111384C2 (de) * 1991-04-09 1999-11-04 Leybold Ag Vorrichtung zur Beschichtung von Substraten
EP0508359B1 (de) * 1991-04-12 1996-10-09 Balzers Aktiengesellschaft Verfahren und Anlage zur Beschichtung mindestens eines Gegenstandes
SE468372B (sv) * 1991-04-24 1992-12-21 Stiftelsen Im Inst Foer Mikroe Foerfarande foer tillverkning av tunnfilmssolceller varvid deponering av skikt paa substrat sker i roterbar (cylindrisk) baeranordning
EP0518333B1 (de) * 1991-06-14 2002-08-28 Hughes Aircraft Company Verfahren zum vertikalen Ausrichten von Flüssigkristallen
JPH05132770A (ja) * 1991-11-11 1993-05-28 Canon Inc スパツタ装置
EP0600303B1 (de) * 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer elektrischen Dünnschicht
GB9225270D0 (en) * 1992-12-03 1993-01-27 Gec Ferranti Defence Syst Depositing different materials on a substrate
US5328582A (en) * 1992-12-04 1994-07-12 Honeywell Inc. Off-axis magnetron sputter deposition of mirrors
FR2699164B1 (fr) * 1992-12-11 1995-02-24 Saint Gobain Vitrage Int Procédé de traitement de couches minces à base d'oxyde ou de nitrure métallique.
JP3679113B2 (ja) * 1992-12-23 2005-08-03 ウンアクシス バルツェルス アクチェンゲゼルシャフト 層堆積方法および装置
US5690796A (en) * 1992-12-23 1997-11-25 Balzers Aktiengesellschaft Method and apparatus for layer depositions
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
US5915285A (en) * 1993-01-21 1999-06-22 Optical Coating Laboratory, Inc. Transparent strain sensitive devices and method
CA2123658C (en) * 1993-05-19 1999-01-19 Willis H. Smith, Jr. Inducing tilted parallel alignment in liquid crystals
IT1261918B (it) * 1993-06-11 1996-06-04 Cetev Cent Tecnolog Vuoto Struttura per deposizione reattiva di metalli in impianti da vuoto continui e relativo processo.
EP0707663A4 (de) * 1993-06-17 1998-01-14 Deposition Sciences Inc Sputtervorrichtung
US5814367A (en) * 1993-08-13 1998-09-29 General Atomics Broadband infrared and signature control materials and methods of producing the same
US6033782A (en) * 1993-08-13 2000-03-07 General Atomics Low volume lightweight magnetodielectric materials
US5489369A (en) * 1993-10-25 1996-02-06 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
GB9405442D0 (en) * 1994-03-19 1994-05-04 Applied Vision Ltd Apparatus for coating substrates
WO1996006203A1 (en) * 1994-08-19 1996-02-29 Optical Coating Laboratory, Inc. Electrochromic materials and devices, and method
US5573864A (en) * 1994-10-25 1996-11-12 The United States Of America As Represented By The Secretary Of Commerce Transparent carbon nitride films and compositions of matter comprising transparent carbon nitride films
US6235105B1 (en) 1994-12-06 2001-05-22 General Atomics Thin film pigmented optical coating compositions
EP0723944A1 (de) * 1995-01-26 1996-07-31 Optical Coating Laboratory, Inc. Verschleissfeste Fenster
US6346176B1 (en) * 1995-01-27 2002-02-12 Gentex Optics, Inc. Method of depositing thin films
US6402902B1 (en) * 1995-02-13 2002-06-11 Deposition Sciences, Inc. Apparatus and method for a reliable return current path for sputtering processes
JPH08222564A (ja) * 1995-02-15 1996-08-30 Yamaha Corp 半導体装置の製造方法および半導体製造装置
US5543183A (en) * 1995-02-17 1996-08-06 General Atomics Chromium surface treatment of nickel-based substrates
GB9503304D0 (en) * 1995-02-20 1995-04-12 Univ Nanyang Deposition apparatus
DE29505497U1 (de) * 1995-03-31 1995-06-08 Balzers Hochvakuum Beschichtungsstation
US5849162A (en) * 1995-04-25 1998-12-15 Deposition Sciences, Inc. Sputtering device and method for reactive for reactive sputtering
US5616224A (en) * 1995-05-09 1997-04-01 Deposition Sciences, Inc. Apparatus for reducing the intensity and frequency of arcs which occur during a sputtering process
US5583683A (en) * 1995-06-15 1996-12-10 Optical Corporation Of America Optical multiplexing device
DE19535894A1 (de) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
BE1010420A3 (fr) 1996-07-12 1998-07-07 Cockerill Rech & Dev Procede pour la formation d'un revetement sur un substrat et installation pour la mise en oeuvre de ce procede.
US5753092A (en) * 1996-08-26 1998-05-19 Velocidata, Inc. Cylindrical carriage sputtering system
US5776256A (en) * 1996-10-01 1998-07-07 The United States Of America As Represented By The Secretary Of The Air Force Coating chamber planetary gear mirror rotating system
DE19644752A1 (de) * 1996-10-28 1998-04-30 Leybold Systems Gmbh Interferenzschichtensystem
TW347369B (en) * 1996-12-17 1998-12-11 Asahi Glass Co Ltd Organic substrate provided with a light absorptive antireflection film and process for production
GB9700158D0 (en) * 1997-01-07 1997-02-26 Gencoa Limited Versatile coating deposition system
US5944964A (en) * 1997-02-13 1999-08-31 Optical Coating Laboratory, Inc. Methods and apparatus for preparing low net stress multilayer thin film coatings
JP4562818B2 (ja) * 1997-02-14 2010-10-13 パナソニック株式会社 人工格子多層膜の着膜装置
US5852513A (en) * 1997-05-14 1998-12-22 Optical Coating Laboratory, Inc. Television filter
US6231732B1 (en) * 1997-08-26 2001-05-15 Scivac Cylindrical carriage sputtering system
DE19740610C2 (de) * 1997-09-12 2003-05-08 Fraunhofer Ges Forschung Siliziumkarbidbeschichtung auf einem Substrat und Verfahren zur Herstellung einer Siliziumkarbidbeschichtung auf einem Substrat sowie Verwendung der Siliziumkarbidbeschichtung
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
US5914817A (en) * 1998-05-15 1999-06-22 Optical Coating Laboratory, Inc. Thin film dichroic color separation filters for color splitters in liquid crystal display systems
JP2000017457A (ja) 1998-07-03 2000-01-18 Shincron:Kk 薄膜形成装置および薄膜形成方法
WO2000028104A1 (en) 1998-11-06 2000-05-18 Scivac Sputtering apparatus and process for high rate coatings
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
US6150022A (en) * 1998-12-07 2000-11-21 Flex Products, Inc. Bright metal flake based pigments
JP2000178728A (ja) * 1998-12-18 2000-06-27 Olympus Optical Co Ltd 光学薄膜の製造装置及び光学薄膜の製造方法
US6964731B1 (en) * 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6660365B1 (en) 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6974629B1 (en) 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
JP3506949B2 (ja) 1999-04-09 2004-03-15 松下電器産業株式会社 薄膜の製造方法、薄膜が形成された回転楕円体、及びこれを用いた電球と薄膜形成装置。
US6309516B1 (en) * 1999-05-07 2001-10-30 Seagate Technology Llc Method and apparatus for metal allot sputtering
US6572738B1 (en) * 1999-05-25 2003-06-03 Unaxis Balzers Aktiengesellschaft Vacuum treatment system and process for manufacturing workpieces
US6328856B1 (en) 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
US6524381B1 (en) 2000-03-31 2003-02-25 Flex Products, Inc. Methods for producing enhanced interference pigments
US6241858B1 (en) 1999-09-03 2001-06-05 Flex Products, Inc. Methods and apparatus for producing enhanced interference pigments
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6545809B1 (en) * 1999-10-20 2003-04-08 Flex Products, Inc. Color shifting carbon-containing interference pigments
KR100487458B1 (ko) * 1999-10-22 2005-05-06 산요덴키가부시키가이샤 리튬 2차 전지용 전극의 제조 방법
US6258218B1 (en) 1999-10-22 2001-07-10 Sola International Holdings, Ltd. Method and apparatus for vacuum coating plastic parts
US6350317B1 (en) 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
US6527866B1 (en) * 2000-02-09 2003-03-04 Conductus, Inc. Apparatus and method for deposition of thin films
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6210540B1 (en) 2000-03-03 2001-04-03 Optical Coating Laboratory, Inc. Method and apparatus for depositing thin films on vertical surfaces
US6436252B1 (en) * 2000-04-07 2002-08-20 Surface Engineered Products Corp. Method and apparatus for magnetron sputtering
EP1292970B1 (de) * 2000-06-08 2011-09-28 Genitech Inc. Verfahren zur herstellung einer dünnen schicht
US6440280B1 (en) * 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
US6586098B1 (en) 2000-07-27 2003-07-01 Flex Products, Inc. Composite reflective flake based pigments comprising reflector layers on bothside of a support layer
GB0019848D0 (en) 2000-08-11 2000-09-27 Rtc Systems Ltd Apparatus and method for coating substrates
JP4614546B2 (ja) * 2001-01-19 2011-01-19 畑 朋延 化合物薄膜の堆積方法とその装置
WO2002086187A1 (en) * 2001-04-20 2002-10-31 N.V. Bekaert S.A. Apparatus for the deposition of metal or metal oxide coatings
JP4666912B2 (ja) * 2001-08-06 2011-04-06 エー・エス・エムジニテックコリア株式会社 プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6500676B1 (en) 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
EP1336985A1 (de) * 2002-02-19 2003-08-20 Singulus Technologies AG Zerstäubungskathode und Vorrichtung und Verfahren zum Beschichten eines Substrates mit mehreren Schichten
AU2003234484A1 (en) * 2002-05-06 2003-11-11 Guardian Industries Corp. Sputter coating apparatus including ion beam source(s), and corresponding method
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
JP3953444B2 (ja) * 2002-10-16 2007-08-08 株式会社アルバック 薄膜形成装置及び薄膜形成方法
DE10347521A1 (de) * 2002-12-04 2004-06-24 Leybold Optics Gmbh Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens
US20040142558A1 (en) * 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US7092287B2 (en) * 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US20040182701A1 (en) * 2003-01-29 2004-09-23 Aashi Glass Company, Limited Sputtering apparatus, a mixed film produced by the sputtering apparatus and a multilayer film including the mixed film
DE10311466B4 (de) * 2003-03-15 2005-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum reaktiven Magnetron-Sputtern
US20060189132A1 (en) * 2003-04-16 2006-08-24 Bridgestone Corporation Method for forming porous thin film
US7537662B2 (en) 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
WO2004108979A1 (ja) * 2003-06-02 2004-12-16 Shincron Co., Ltd. 薄膜形成装置及び薄膜形成方法
CN100489149C (zh) * 2003-06-03 2009-05-20 株式会社新柯隆 薄膜的形成方法及其形成装置
FR2856677B1 (fr) * 2003-06-27 2006-12-01 Saint Gobain Substrat revetu d'une couche dielectrique et procede pour sa fabrication
FR2857467B1 (fr) * 2003-07-09 2005-08-19 Saint Gobain Dispositif electrocommandable a proprietes optiques et/ou energetiques variables
US20050056535A1 (en) * 2003-09-15 2005-03-17 Makoto Nagashima Apparatus for low temperature semiconductor fabrication
US8083907B1 (en) 2003-09-26 2011-12-27 University Of South Florida Hydrogen storage nano-foil and method of manufacture
WO2005035822A1 (en) * 2003-10-07 2005-04-21 Deposition Sciences, Inc. Apparatus and process for high rate deposition of rutile titanium dioxide
WO2005036607A2 (en) * 2003-10-08 2005-04-21 Deposition Sciences, Inc. System and method for feedforward control in thin film coating processes
US7439208B2 (en) 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
CA2550331A1 (en) 2003-12-22 2005-07-14 Cardinal Cg Compagny Graded photocatalytic coatings
EP1711645B1 (de) * 2004-01-15 2013-12-25 Deposition Sciences, Inc. Verfahren und vorrichtung zur kontrolle optischer charakteristika von dünnen filmen bei einem abscheidungsverfahren
BRPI0418686B1 (pt) * 2004-03-31 2013-07-23 método e aparelho para produzir um fio de aço revestido
JP4922756B2 (ja) * 2004-04-09 2012-04-25 株式会社アルバック 成膜装置および成膜方法
US7901870B1 (en) 2004-05-12 2011-03-08 Cirrex Systems Llc Adjusting optical properties of optical thin films
US7550067B2 (en) * 2004-06-25 2009-06-23 Guardian Industries Corp. Coated article with ion treated underlayer and corresponding method
US7563347B2 (en) * 2004-06-25 2009-07-21 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Method of forming coated article using sputtering target(s) and ion source(s) and corresponding apparatus
US7585396B2 (en) * 2004-06-25 2009-09-08 Guardian Industries Corp. Coated article with ion treated overcoat layer and corresponding method
US7311975B2 (en) * 2004-06-25 2007-12-25 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article having low-E coating with ion beam treated IR reflecting layer and corresponding method
US7229533B2 (en) * 2004-06-25 2007-06-12 Guardian Industries Corp. Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer
WO2006017311A1 (en) 2004-07-12 2006-02-16 Cardinal Cg Company Low-maintenance coatings
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7565084B1 (en) 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US20060096536A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition apparatus
CN101087899A (zh) 2004-11-10 2007-12-12 德斯塔尔科技公司 光电装置的垂直生产
JP2008520102A (ja) * 2004-11-10 2008-06-12 デイスター テクノロジーズ,インコーポレイティド アルカリ含有層を用いた方法及び光起電力素子
JP2008520101A (ja) * 2004-11-10 2008-06-12 デイスター テクノロジーズ,インコーポレイティド Cigsにおいて現場接合層を作製するための熱プロセス
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
WO2006064414A1 (en) * 2004-12-15 2006-06-22 Philips Intellectual Property & Standards Gmbh Thin film acoustic reflector stack
DE102005003047A1 (de) * 2005-01-22 2006-07-27 Identif Gmbh Vorrichtung zum Bewegen von Werkstücken
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
WO2006106767A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路対及び伝送線路群
DE102005016405A1 (de) * 2005-04-08 2006-10-12 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Vakuumbeschichtung von Substraten unterschiedlicher Größe
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US20070068794A1 (en) * 2005-09-23 2007-03-29 Barret Lippey Anode reactive dual magnetron sputtering
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US20070119704A1 (en) * 2005-11-30 2007-05-31 Jau-Jier Chu Method for sputtering a multilayer film on a sheet workpiece at a low temperature
US20070151842A1 (en) * 2005-12-15 2007-07-05 Fluens Corporation Apparatus for reactive sputtering
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US20070264427A1 (en) * 2005-12-21 2007-11-15 Asm Japan K.K. Thin film formation by atomic layer growth and chemical vapor deposition
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
JP2009534563A (ja) * 2006-04-19 2009-09-24 日本板硝子株式会社 同等の単独の表面反射率を有する対向機能コーティング
US7939172B2 (en) * 2006-05-17 2011-05-10 G & H Technologies, Llc Wear resistant vapor deposited coating, method of coating deposition and applications therefor
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US20080073557A1 (en) * 2006-07-26 2008-03-27 John German Methods and apparatuses for directing an ion beam source
US8308915B2 (en) 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
KR100671474B1 (ko) * 2006-09-14 2007-01-19 한국진공주식회사 자동차 램프의 반사막과 보호막 자동 코팅장치
JP2010507881A (ja) * 2006-10-19 2010-03-11 アプライド・プロセス・テクノロジーズ・インコーポレーテッド クローズドドリフトイオン源
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7763791B2 (en) * 2006-12-29 2010-07-27 Caterpillar Inc Thin film with oriented cracks on a flexible substrate
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US7563725B2 (en) * 2007-04-05 2009-07-21 Solyndra, Inc. Method of depositing materials on a non-planar surface
JP2008268372A (ja) * 2007-04-17 2008-11-06 Fujinon Corp 位相差補償素子及びその製造方法
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
DE112008000006A5 (de) * 2007-06-22 2009-05-14 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Schleusen eines Substrats in eine und aus einer Vakuumbeschichtungsanlage
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
US7851307B2 (en) * 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
WO2009036284A1 (en) 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coatings, and methods for producing low-maintenance coatings
US8257500B2 (en) * 2007-10-11 2012-09-04 Von Ardenne Anlagentechnik Gmbh Transport apparatus for elongate substrates
WO2009051764A1 (en) * 2007-10-15 2009-04-23 Solyndra, Inc. Support system for solar energy generator panels
US9175383B2 (en) * 2008-01-16 2015-11-03 Applied Materials, Inc. Double-coating device with one process chamber
WO2009129332A2 (en) * 2008-04-16 2009-10-22 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
KR101436564B1 (ko) * 2008-05-07 2014-09-02 한국에이에스엠지니텍 주식회사 비정질 실리콘 박막 형성 방법
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US9782949B2 (en) 2008-05-30 2017-10-10 Corning Incorporated Glass laminated articles and layered articles
CN101635253A (zh) * 2008-06-14 2010-01-27 因特维克有限公司 利用可拆除掩模处理基板的系统和方法
US20100047594A1 (en) * 2008-08-20 2010-02-25 Aharon Inspektor Equipment and method for physical vapor deposition
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US20100252419A1 (en) * 2009-02-02 2010-10-07 Klaus Bollmann Method of manufacturing a high density capacitor or other microscopic layered mechanical device
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System
US10261381B2 (en) 2009-03-31 2019-04-16 View, Inc. Fabrication of low defectivity electrochromic devices
US10852613B2 (en) 2009-03-31 2020-12-01 View, Inc. Counter electrode material for electrochromic devices
US11187954B2 (en) 2009-03-31 2021-11-30 View, Inc. Electrochromic cathode materials
US10591795B2 (en) 2009-03-31 2020-03-17 View, Inc. Counter electrode for electrochromic devices
US9261751B2 (en) 2010-04-30 2016-02-16 View, Inc. Electrochromic devices
US9664974B2 (en) 2009-03-31 2017-05-30 View, Inc. Fabrication of low defectivity electrochromic devices
DE102009015737B4 (de) 2009-03-31 2013-12-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren
US8582193B2 (en) 2010-04-30 2013-11-12 View, Inc. Electrochromic devices
US10156762B2 (en) 2009-03-31 2018-12-18 View, Inc. Counter electrode for electrochromic devices
WO2016085764A1 (en) 2014-11-26 2016-06-02 View, Inc. Counter electrode for electrochromic devices
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
CN101899642B (zh) * 2009-05-25 2013-03-20 鸿富锦精密工业(深圳)有限公司 镀膜装置
US20110030794A1 (en) * 2009-08-10 2011-02-10 Edward Teng Apparatus And Method For Depositing A CIGS Layer
CN102598130A (zh) * 2009-08-26 2012-07-18 威科仪器股份有限公司 用于在磁记录介质上制作图案的系统
TWI419988B (zh) * 2009-09-18 2013-12-21 羅門哈斯電子材料有限公司 製造耐用物件之方法
US9759975B2 (en) 2010-04-30 2017-09-12 View, Inc. Electrochromic devices
US9765635B2 (en) 2010-05-28 2017-09-19 Nano-Product Engineering, Llc. Erosion and corrosion resistant protective coatings for turbomachinery
US9482105B1 (en) 2010-05-28 2016-11-01 Vladimir Gorokhovsky Erosion and corrosion resistant protective coating for turbomachinery methods of making the same and applications thereof
TWI458116B (zh) * 2010-08-09 2014-10-21 Tsmc Solar Ltd 沉積銅銦鎵硒(cigs)吸收層之裝置及其方法
CN102923936B (zh) * 2011-08-11 2014-12-10 富泰华工业(深圳)有限公司 蚀刻装置
EP2761049B1 (de) 2011-09-26 2020-02-26 Evatec AG Verfahren zur beschichtung eines substrats mit einem dünnfilm aus einer metall- oder halbleiterverbindung
US10077207B2 (en) 2011-11-30 2018-09-18 Corning Incorporated Optical coating method, apparatus and product
US9957609B2 (en) * 2011-11-30 2018-05-01 Corning Incorporated Process for making of glass articles with optical and easy-to-clean coatings
KR102095605B1 (ko) 2011-12-12 2020-04-16 뷰, 인크. 박막 디바이스 및 제조
EP2650135A1 (de) * 2012-04-12 2013-10-16 KBA-NotaSys SA Intaglio-Druckplattenbeschichtungsvorrichtung
CN103374701A (zh) * 2012-04-18 2013-10-30 芈振伟 反应气体溅镀装置
EP3872563A1 (de) * 2012-05-02 2021-09-01 View, Inc. Sputtertarget für die herstellung eines elektrochromen elements und vorrichtung enthaltend eines solchen sputtertargets
JP6244103B2 (ja) 2012-05-04 2017-12-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム
RU2507308C1 (ru) * 2012-07-19 2014-02-20 Айрат Хамитович Хисамов Способ нанесения тонкопленочных покрытий и технологическая линия для его осуществления
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9366784B2 (en) 2013-05-07 2016-06-14 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
US9110230B2 (en) 2013-05-07 2015-08-18 Corning Incorporated Scratch-resistant articles with retained optical properties
PL2811508T3 (pl) * 2013-06-07 2019-10-31 Soleras Advanced Coatings Bvba Konfiguracja gazowa dla magnetronowych układów osadzających
US20150024538A1 (en) * 2013-07-19 2015-01-22 Tsmc Solar Ltd. Vapor dispensing apparatus and method for solar panel
RS58180B1 (sr) * 2014-01-14 2019-03-29 The Batteries Spolka Z Ograniczona Odpowiedzialnoscia Postupak za nanošenje slojeva od tankog filma i proizvodna linija za implementaciju postupka
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
TW201540858A (zh) * 2014-02-17 2015-11-01 Gtat Corp 用以產生金屬氧化物塗層的系統和方法
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US11891327B2 (en) 2014-05-02 2024-02-06 View, Inc. Fabrication of low defectivity electrochromic devices
US9335444B2 (en) 2014-05-12 2016-05-10 Corning Incorporated Durable and scratch-resistant anti-reflective articles
US11267973B2 (en) 2014-05-12 2022-03-08 Corning Incorporated Durable anti-reflective articles
US20150345007A1 (en) * 2014-05-28 2015-12-03 Apple Inc. Combination vapor deposition chamber
US9790593B2 (en) 2014-08-01 2017-10-17 Corning Incorporated Scratch-resistant materials and articles including the same
US10345671B2 (en) 2014-09-05 2019-07-09 View, Inc. Counter electrode for electrochromic devices
JP6547271B2 (ja) * 2014-10-14 2019-07-24 凸版印刷株式会社 フレシキブル基板上への気相成長法による成膜方法
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
TWI744249B (zh) 2015-09-14 2021-11-01 美商康寧公司 高光穿透與抗刮抗反射物件
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
DE102015117753A1 (de) * 2015-10-19 2017-04-20 Von Ardenne Gmbh Vakuumschleusenanordnung, Vakuumanordnung und Verfahren
US10262838B2 (en) * 2015-10-22 2019-04-16 Vaeco Inc. Deposition system with integrated cooling on a rotating drum
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
RU2660863C2 (ru) * 2016-02-25 2018-07-10 Акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнёва" Способ изготовления изделий из композиционных материалов с отражающим покрытием
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US11174548B2 (en) 2016-06-03 2021-11-16 The Batteries Sp .Z.O.O. Thin film coating method and the manufacturing line for its implementation
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
GB201702478D0 (en) * 2017-02-15 2017-03-29 Univ Of The West Of Scotland Apparatus and methods for depositing variable interference filters
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN110546302B (zh) 2017-05-05 2022-05-27 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
TWI783998B (zh) 2017-05-08 2022-11-21 美商康寧公司 反射的、著色的或顏色偏移的抗刮塗層和製品
DE102018115516A1 (de) 2017-06-28 2019-01-03 Solayer Gmbh Sputtervorrichtung und Sputterverfahren zur Beschichtung von dreidimensional geformten Substratoberflächen
US10472274B2 (en) 2017-07-17 2019-11-12 Guardian Europe S.A.R.L. Coated article having ceramic paint modified surface(s), and/or associated methods
JP6900570B2 (ja) * 2017-07-18 2021-07-07 納獅新材料有限公司Naxau New Materials Co., Ltd. 機能性複合粒子及びその製造方法
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Asm Ip控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
WO2019136261A1 (en) * 2018-01-04 2019-07-11 Ih Ip Holdings Limited Gas phase co-deposition of hydrogen/deuterium loaded metallic structures
EA034967B1 (ru) 2018-05-04 2020-04-13 Общество С Ограниченной Ответственностью "Изовак Технологии" Технологическая линия для формирования тонкопленочных покрытий в вакууме (варианты)
KR102149680B1 (ko) * 2018-08-03 2020-08-31 주식회사 테토스 기판 측면부 증착 장치
DE102018213534A1 (de) 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
CN114085038A (zh) 2018-08-17 2022-02-25 康宁股份有限公司 具有薄的耐久性减反射结构的无机氧化物制品
WO2020178238A1 (en) 2019-03-01 2020-09-10 The Batteries spólka z ograniczona odpowiedzialnoscia Processing line for depositing thin-film coatings
CN111962033A (zh) * 2019-05-20 2020-11-20 汉能移动能源控股集团有限公司 一种颜色介质膜制备方法和制备设备
CN110007539B (zh) * 2019-05-22 2021-09-21 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法
DE102020201829A1 (de) 2020-02-13 2021-08-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung mit zusätzlichen Plasmaquellen
CN112267102A (zh) * 2020-10-27 2021-01-26 李县内 一种真空镀膜装置
CZ309261B6 (cs) * 2020-12-18 2022-06-29 Fyzikální ústav AV ČR, v. v. i Optická polovodivá tenká vrstva, způsob její výroby, zařízení vhodné pro výrobu této vrstvy a čtecí zařízení
CA3211117A1 (en) 2021-02-16 2022-08-25 Spectre Materials Sciences, Inc. Primer for firearms and other munitions
JP2023051251A (ja) * 2021-09-30 2023-04-11 東京エレクトロン株式会社 成膜装置および成膜方法
CN115110048B (zh) * 2022-06-20 2023-05-02 肇庆市科润真空设备有限公司 基于磁控溅射的pecvd镀膜装置及方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1217685A (en) * 1967-06-05 1970-12-31 Smiths Industries Ltd Improvements in or relating to methods and apparatus for sputtering of materials
US3632494A (en) * 1967-11-06 1972-01-04 Warner Lambert Co Coating method and apparatus
FR2183577B1 (de) * 1972-05-10 1974-09-27 Pont A Mousson
FR2183557A1 (en) * 1972-05-10 1973-12-21 Cit Alcatel Cathodic sputtering appts - with number of chambers for simultaneous treatment of several substrates
US3829373A (en) * 1973-01-12 1974-08-13 Coulter Information Systems Thin film deposition apparatus using segmented target means
US4046666A (en) * 1976-05-07 1977-09-06 The United States Of America As Represented By The United States Energy Research And Development Administration Device for providing high-intensity ion or electron beam
AU507748B2 (en) * 1976-06-10 1980-02-28 University Of Sydney, The Reactive sputtering
US4151064A (en) * 1977-12-27 1979-04-24 Coulter Stork U.S.A., Inc. Apparatus for sputtering cylinders
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4298444A (en) * 1978-10-11 1981-11-03 Heat Mirror Associates Method for multilayer thin film deposition
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
JPS57141930A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Device for formation of thin film
CA1155798A (en) * 1981-03-30 1983-10-25 Shmuel Maniv Reactive deposition method and apparatus
US4434037A (en) * 1981-07-16 1984-02-28 Ampex Corporation High rate sputtering system and method
US4424103A (en) * 1983-04-04 1984-01-03 Honeywell Inc. Thin film deposition
EP0122092A3 (de) * 1983-04-06 1985-07-10 General Engineering Radcliffe Limited Vorrichtung zur Vakuumbeschichtung
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
JPS607191A (ja) * 1983-06-24 1985-01-14 三容真空工業株式会社 回路基板の製造方法及びその装置
JPS6052574A (ja) * 1983-09-02 1985-03-25 Hitachi Ltd 連続スパツタ装置
JPS60197875A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタ装置用自動成膜制御装置
JPS60218464A (ja) * 1984-04-13 1985-11-01 Nippon Telegr & Teleph Corp <Ntt> 薄膜の製造装置
NL8401721A (nl) * 1984-05-29 1985-12-16 Leer Koninklijke Emballage Werkwijze en stelsel voor het produceren van een reactief gesputterde geleidende transparante metaaloxidefilm op een doorlopende materiaalbaan.
US4637869A (en) * 1984-09-04 1987-01-20 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films
JPS61106768A (ja) * 1984-10-31 1986-05-24 Anelva Corp 基体処理装置
JPS61149476A (ja) * 1984-12-24 1986-07-08 Toshiba Corp スパツタリング装置
DE3503105A1 (de) * 1985-01-30 1986-07-31 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum beschichten von maschinenteilen und werkzeugen mit hartstoffmaterial und durch das verfahren hergestellte maschinenteile und werkzeuge
GB2180262B (en) * 1985-09-05 1990-05-09 Plessey Co Plc Methods of forming substances on substrates by reactive sputtering
JPS62177176A (ja) * 1986-01-30 1987-08-04 Nippon Steel Corp 薄膜形成装置
JPH0819518B2 (ja) * 1986-06-02 1996-02-28 株式会社シンクロン 薄膜形成方法および装置
JPS62287073A (ja) * 1986-06-04 1987-12-12 Sony Corp マグネトロンスパツタリング用カソ−ド装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10006121C1 (de) * 2000-02-11 2001-05-23 Sekurit Saint Gobain Deutsch Verfahren zum Verhindern einer rückseitigen Beschichtung von starren, insbesondere gebogenen Scheiben und Verwendung einer Transportvorrichtung

Also Published As

Publication number Publication date
KR920004846B1 (ko) 1992-06-19
JP3064301B2 (ja) 2000-07-12
JPH024967A (ja) 1990-01-09
DE68927920T3 (de) 2004-12-16
EP0655515B1 (de) 1999-08-11
KR890013215A (ko) 1989-09-22
EP0328257A3 (de) 1990-10-31
DE68929053T2 (de) 2000-02-03
DE328257T1 (de) 1990-05-03
EP0328257A2 (de) 1989-08-16
ATE151119T1 (de) 1997-04-15
CA1340651C (en) 1999-07-13
DE68927920D1 (de) 1997-05-07
EP0328257B2 (de) 2004-07-14
ATE183245T1 (de) 1999-08-15
EP0655515A1 (de) 1995-05-31
DE68929053D1 (de) 1999-09-16
EP0655515B2 (de) 2008-10-15
EP0328257B1 (de) 1997-04-02
US4851095A (en) 1989-07-25

Similar Documents

Publication Publication Date Title
DE68927920D1 (de) Magnetronzerstäubungsanlage und -verfahren
ES2070343T3 (es) Metodo para revestir sustratos con compuestos a base de silicio.
US5215638A (en) Rotating magnetron cathode and method for the use thereof
DE2965330D1 (en) Sputtering cathode and system for sputter-coating large area substrates
ZA802395B (en) Vacuum deposition system and method
EP0385475A3 (de) Verfahren zur Herstellung eines durchsichtigen leitenden Films
WO2001037310A3 (en) Method and apparatus for ionized physical vapor deposition
EP1489643A3 (de) Verfahren und Vorrichtung zur ionisierten physikalischen Dampfabscheidung
ATE244777T1 (de) Rechteckige vakuumlichtbogenplasmaquelle
KR950032702A (ko) 스퍼터링을 위한 진공 챔버내 장치 및 스퍼터링 방법
EP0516436A3 (en) Sputtering device
WO2001031080A3 (en) Electron beam physical vapor deposition apparatus
US5538609A (en) Cathodic sputtering system
US4424103A (en) Thin film deposition
US5753089A (en) Sputter coating station
EP0603486A3 (en) Process for multi-step coating of substrates.
EP0167383A3 (de) Vorrichtung und Verfahren zum Verändern der Eigenschaften eines Materials
EP0745147A4 (de) Verfahren und gerät zur beschichtung eines substrats
JPS56105475A (en) Coating apparatus and method of substrate by cathode spattering and use
Nath Method and Apparatus for Plasma-Assisted Deposition of Thin Films
CA2281265A1 (en) Method for manufacturing a nonlinear optical thin film
JPS5662964A (en) Coating method for first wall surface of nuclear fusion apparatus
ES8703533A3 (es) Metodo de aplicar un revestimiento de metal sobre una superficie de un substrato en una camara de deposicion fisica de vapor por arco electrico.
JPS5514813A (en) Forming method for thin film on substrate
ES8708022A3 (es) Un metodo para controlar el movimiento de las manchas de catodo sobre la cara generadora de plasma de un electrodo sacrificatorio

Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings