CN101087899A - 光电装置的垂直生产 - Google Patents
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Abstract
本发明提供一种通过以下方式生产的光电薄膜太阳能电池(310)：将垂直定向的基于托盘(320)的衬底(310)提供到在其中可在所述托盘(320)上循序地形成多个层的一系列反应室(330、340)中。
Description
相关申请案的交叉参考
本申请案主张2004年11月10日申请的序列号为60/626,843美国临时专利申请案的优先权。
技术领域
本文揭示的本发明大体上涉及制造光电装置，且更具体地说涉及一种用于制造薄膜的设备和使用垂直定向的基于托盘的系统制造薄膜太阳能电池的产品和方法。
背景技术
可更新能量的益处尚未完全反映到市场价格中。虽然例如光电(PV)电池的替代能源提供清洁、可靠且可更新的能量，但高生产成本和生产可靠性的缺乏使得这些装置无法成为可实施的商业产品。随着对能量的需求的增长，全世界对提供能源的替代品的需求也随之增加。
虽然可在实验室里制造相对高效的薄膜PV电池，但已证明，难以将所述工艺发展成具有对于商业生存而言至关重要的重复能力和效率的商业规模制造工艺。此外，与制造相关联的成本是阻止薄膜太阳能电池更广泛地被商业化的重要因素。由于缺乏高效的薄膜制造工艺，使得PV电池无法有效地取代市场上的其它能量源。
可根据不同的设计来制造薄膜PV电池。在薄膜PV电池中，将PV材料的薄型半导体层沉积在例如玻璃、金属或塑料薄片的支承层上。由于薄膜材料的光吸收率高于晶体材料，所以以极薄的连续的原子、分子或离子层的形式沉积PV材料。典型的薄膜PV电池的活性区域仅若干微米厚。基本的光电堆叠设计示范了PV电池的典型结构。在所述设计中，薄膜太阳能电池包括衬底、阻挡层、背部接触层、p型吸收体层、n型结缓冲层、本征透明氧化层和透明导电氧化层。铜铟镓二硒(CIGS)化合物最适合用于薄膜电池的吸收体层中，且归入铜铟硒类(称为CIS材料)的分类。通常通过基于真空的技术来沉积CIGS薄膜。
薄膜制造过程因沉积过程中出现的产品缺陷而遭受较低的良率。具体地说，这些缺陷是因在处理和材料处置期间发生的污染以及玻璃、金属或塑料衬底的断裂导致的。因此，此项技术需要一种既能在处理期间限制潜在的污染同时又将衬底断裂的可能性最小化的薄膜太阳能电池制造过程。
目前，使用多步骤批处理来制造电池，其中在各反应步骤之间转移每一产品零件。此类转移较为繁重而且需要在室内循环进行反应。典型的过程由一系列个别的分批处理室组成，每一处理室特别针对电池中各层的形成而设计。问题在于，衬底被数次从真空转移到空气中再传回真空。这种真空破坏可能会导致产品受到污染。因此，此项技术中需要一种将真空破坏的可能性最小化的工艺。
虽然替代的系统使用一系列个别的批处理室，其与用于每一室的卷式连续过程耦合，但系统的非连续性以及需要破坏真空仍然是主要缺点。此外，卷式过程可能会向玻璃或金属衬底施加弯曲应力，从而导致破裂和断裂。这类缺陷使层的粘结性折衷，且可能导致零良率。
需要高温沉积过程也导致PV电池生产的低良率。所有目前已知的柔性聚酰亚胺或其它聚合物衬底材料一般都不能经受高温。
举例来说，由Hollars在2004年4月1日公开的美国专利申请案2004/0063320揭示了一种用于使用卷式系统连续生产光电堆叠的一般方法。如上所述，这一过程要求向衬底施加弯曲应力。在衬底材料为玻璃或金属的情况下，这一应力可能会导致破裂和断裂。破裂或断裂会削弱高质量堆叠结构，并降低制造良率。因此，为了成为商业上可实施的过程，所揭示的系统需要用于生产堆叠的柔性衬底。然而，目前已知的柔性聚合物材料均无法承受高温沉积过程。
此外，Hollars未教示任何用于优化通过其连续系统的产品流的具体设备。水平处理仍然被用作对被加工零件的基本沉积和反应定向，且并不使用任何用于使多个处理流通过区域中的每一者或任何一者的方案。
因此，此项技术中需要一种不会对衬底施加弯曲应力的过程，其中衬底可经受高温沉积过程。因此，需要一种用于有效地制造PV工件且能够进行大规模生产的过程。
发明内容
本发明提供一种通过以下方式生产的光电制品：将垂直定向的产品衬底通过连续反向、传送带构件或通过基于托盘的传输构件提供到一系列反应室，其中阻挡层、背部接触层、p型半导体层、碱性材料、n型结缓冲层、本征透明氧化层、透明导电氧化层和顶部金属栅格可循序形成在所述托盘上。
进一步揭示一种用于通过使用一系列基于托盘的固持装置来形成光电装置的方法，所述固持装置以垂直定向装载工件，且具有提供在每一托盘的正面和背面上的工件衬底，以使得受到控制的反应室生产的产品量大致为使用单侧托盘的产品量的两倍。在此实施例中，使一系列托盘以界定的速率通过具有多个处理区域的反应器，其中每个区域用于装置制造的一个生产步骤阶段。
用于处理这个垂直定向的产品系列的特定生产步骤生产可包含：用于制备衬底的装载或隔离区域；用于沉积阻挡层、背部接触层、一个或一个以上半导体层和碱性材料的环境；用于对上述层中的一者或一者以上进行热处理的环境；用于沉积n型化合物半导体(其中此层充当结缓冲层)、本征透明氧化层和导电的透明氧化层的环境。在进一步的实施例中，所述过程可经调整而包括更多或更少的区域，以便制造具有更多或更少层的薄膜太阳能电池。
可使用垂直定向的托盘型系统，其中将多个工件固持为托盘，且使多个托盘通过连续的反应器步骤设备进行处理。这个基于托盘的系统允许对较小的工件进行连续处理，且允许替代的材料处置步骤，例如在中间或最终步骤中的托盘堆叠。
附图说明
图1展示通过本发明的生产技术生产的薄膜太阳能电池的实施例。
图2示意性代表用于形成太阳能电池的反应器。
图3展示一装置上的多个工件衬底，所述装置能够将衬底附着到载体上，所述载体还具有允许将零件以精确方式前进并通过生产设备的构件。
图4展示本发明中使用的板上组装有多个衬底工件的托盘的示意图。
图5A展示处理方法的实施例，其中通过根据本发明的循序的溅镀-蒸镀过程来同时馈送和处理两个衬底。
图5B展示处理方法的的实施例的俯视图，其中通过循序的溅镀-蒸镀/溅镀-蒸镀过程同时馈送和处理两个衬底。
图6说明根据本发明的过程的另一实施例，其中各区域进一步包括一个或一个以上子区域。
具体实施方式
一般的光电堆叠设计
本发明使用一种新的生产设备来生产光电装置。当然，特定设备将取决于具体的光电装置设计，所述设计可能是不同的。
参看图1，将所有层沉积在衬底105上，所述衬底可包括多种功能材料(例如玻璃、金属、陶瓷或塑料)中的一种。直接沉积在衬底105上的是阻挡层110。阻挡层110包括薄型导体或非常薄的绝缘材料，并且用以阻挡不合需要的元素或化合物从衬底中向外扩散到电池的其余部分。此阻挡层110可包括铬、钛、氧化硅、氮化钛和相关的具有所需导电性和耐用性的材料。接下来沉积的层是背部接触层120，其包括非反应性金属，例如钼。下一层沉积在背部接触层120上，且为p型半导体层130，以便改进吸收体层155与背部接触120之间的粘附性。P型半导体层130可为I-IIIa，b-VI同型半导体，但优选的成份为Cu:Ga:Se、Cu:Al:Se，或Cu:In:Se与前述化合物中的任一者的合金。
在此实施例中，p型吸收体层的形成包含多个离散层的相互扩散。最终如图1所示，p型半导体层130与150组合成单个的复合层155，其充当太阳能的主要吸收体。在此实施例中，添加碱性材料140以便为后续层的生长播种，并增加吸收体层155的载流子浓度和晶粒大小，因而提高太阳能电池的转换效率。一旦经沉积，便将所述层在约400℃℃-600℃的温度下进行热处理。
在热处理之后，通过沉积n型结缓冲层160来继续进行光电生产过程。这一层160将最终与吸收体层155相互作用，以形成必要的p-n结165。接下来沉积透明的本征氧化层170，以充当具有与CIGS吸收体的异质结。最后，沉积导电的透明氧化层180，以充当电池电极的顶部。这最后一层是导电的，且可将电流载运到栅格载体，所述栅格载体允许带走所产生的电流。
一般的设备配置
本发明的第一实施例是一种用于制造光电装置的设备，其包括构件，所述构件用于提供向生产设备呈递工件的构件，其中工件的定向是垂直的。生产系列的这一垂直定向允许将工件安置在产品系列的正面和背面上，且允许提高制造设备的容量。另人惊奇的是，已发现可通过使用若干要素来实现在垂直轴上提供工件衬底，所述因素包含：
·有限的衬底高度，以便可优化反应室技术
·每个沉积或反应室与下一沉积或反应室的充分隔离
·对反应材料和沉积源的充分监视和控制
·精确的温度控制
然而，已发现系统需要垂直衬底，所述垂直衬底可使用目标衬底在垂直平面的两侧上的定位，借此可实现生产中的两倍实例，且可以更经济的方式实现对受到谨慎控制的反应参数的更好且更经济的使用，其中包含相对低的压力和较高的温度。
可将固持多个衬底零件的多个托盘用作用于在生产系列被循序传输并通过多个反应区域时固持衬底的构件。这些反应区域至少包含能够提供用于沉积半导体层的环境的区域，和能够提供用于沉积前体材料以形成p型吸收体层的环境的区域。
图4展示托盘的示意图。托盘为多个小型PV工件衬底410提供固持基座400，或加工衬底以预定方式固定地附接到托盘，以便以精确且可控制的方式在每个处理室中呈递各个工件。托盘本身经过设计，以便可精确地确定托盘的位置。托盘还具有构件420，其用于允许附接到驱动构件，以便使托盘前进并通过处理室。托盘主体的材料经选择，使其具有热稳定性，并且不会与反应或沉积室中使用的处理或沉积材料相互作用。
此外，用于将工件固定到托盘的构件是可释放的。在有些实例中，用于附着工件的构件是磁性的，原因在于工件衬底本身是铁磁性的，或者其具有将各零件固持到托盘主体的覆层。
在优选实施例中，所述过程可进一步包括与所述衬底背对背行进的衬底。在此实施例中，衬底以背对背配置垂直定向，并且行进穿过执行相同过程操作的区域。
图5A展示反应器500的一部分的俯视图说明，所述反应器500以背对背方式处理衬底501和502，且还说明区域511隔离的循序性溅镀-蒸镀过程。为了实现背对背处理，将衬底501的加热源503镜射为衬底502的加热源507。同样，将衬底501的溅镀源504、加热源505和蒸镀源506镜射为衬底502的溅镀源508、加热源509和蒸镀源510。图5A展示两个衬底顶部的这个垂直的两侧制造过程，其中在这两个衬底中制造光电装置。将衬底501和502从左向右处理，通过装置的加热、溅镀和蒸镀室，从而将层形成为PV装置的薄膜。所述衬底由循序的加热器503和507传递，并接着在1e-3-1e-2托的大气中暴露于溅镀目标503和509。接着将衬底在1e-7-1e-6托下传输并通过差分抽吸室，且接着呈递到蒸镀沉积室，在所述蒸镀沉积室中，用加热器505和509来加热各个衬底501和502中的每一者，并分别提供气体蒸镀源506和510。
图5B展示展示以背对背方式用循序的溅镀-蒸镀/溅镀-蒸镀过程处理衬底521与522的反应器512的一部分的俯视图说明。如图5A中所示，将衬底521的溅镀源534镜射为衬底522的溅镀源528。同样，将衬底521的加热源523和526、蒸镀源524和527以及溅镀源525镜射为衬底522的加热源529和532、蒸镀源530和533以及溅镀源531。因此，通过加热和材料源的简单重复，可在相同的机器内将太阳能电池的产量有效地翻倍。
替代性的基于托盘的制造方案
图2示意性表示用于形成太阳能电池的反应器200。衬底205从左到右馈送并穿过反应器。反应器200包含一个或一个以上处理区域，其在图2中表示为220、230、240和250，其中每个处理区域均包括用于在衬底205上沉积材料的环境。所述区域以机械方式或可操作地在反应器200内彼此连接。如本文所使用，术语“环境”是指当衬底205位于特定区域中时用于在衬底205上沉积或反应材料层或材料混合物的条件曲线。
根据太阳能电池正被处理的层来配置每个区域。举例来说，一区域可经配置以执行溅镀操作，其中包含加热源和一个或一个以上源目标。
优选的情况是，以可控制的速率使伸长的衬底205通过各种处理区域。进一步设想，衬底205可具有0.5m/分到约2.m/分的位移速度。因此，优选考虑到所需的传输速度、考虑到材料接近特定源材料的滞留时间而将每个区域内部的过程调整为形成所需的横截面。因此，可考虑到由传输或位移速度确定的堆叠的滞留时间而选择每个过程的特征(例如材料和过程选择、温度、压力或溅镀传递速率等)，以确保以适当方式传递组成材料。
根据本发明，可以垂直定向的托盘方式以“图片帧”类型装配将衬底205传输并通过过程，以便标引并传输通过过程，图3中说明了后一种方式。参看图3，将一个衬底或一组衬底310安装在托盘320上，所述托盘320平移通过轨道350上的一个或一个以上区域330和340。在替代实施例中，所述过程可进一步包括第二衬底或第二组衬底，其以与衬底310成背对背的配置放置。
预期各种区域内的背景压力的范围将从10-6托到10-3托。可通过添加例如氩气、氮气或氧气等纯净气体来实现高于基准真空(10-6托)的压力。优选的情况是，速率R是常数，以使得衬底205不停止地穿过反应器200从入口201行进到出口202。所属领域的技术人员将了解，可因此以连续方式在衬底205上形成太阳能电池堆叠，而无需衬底205在反应器200内停止。
图2中的反应器可进一步包括真空隔离子区域或狭缝阀(slit valve)，其经配置以隔离相邻的处理区域。提供真空隔离子区域或狭缝阀以便在不同的压力环境之间连续传输衬底。
图2中展示的反应器是多个N处理区域220、230、240和250。然而，所属领域的技术人员应了解，反应器可包括区域220、230、240、250……N个区域。装载/卸载区域210/211包括可与反应器的其余部分隔离且可对空气开放的区域。
在优选实施例中，所述过程可进一步包括衬底206，其与衬底205背对背地行进。在此实施例中，衬底206和205以背对背的配置垂直定向，且经过区域220、230、240和250，所述区域执行相同的处理操作222/221、232/231、242/241和252/251。
具体处理步骤
当然，用于生产特定PV物件的方法步骤取决于所述物件的具体设计。基于CIS的PV将具有与基于硅的系统的不同生产方法。本发明并不局限于一种PV类型，且一般而言，可用本发明的技术制造任何PV。
在CIGS的情况下，具体步骤可包含：将衬底装载通过隔离的装载区域或类似单元210。在各实施例中，反应器200内含有隔离区域210。或者，可将隔离区域210附接到反应器200的外部部分。第一处理区域210可进一步包括衬底制备环境，以去除表面的原子级的任何残余的瑕疵。衬底制备可包含：离子束、沉积、加热或溅镀蚀刻。这些方法是此项技术中已知的，且将不再进一步论述。
第二处理区域可为用来沉积用于衬底杂质隔离的阻挡层的环境，其中阻挡层在衬底与后续层之间提供导电路径。在优选实施例中，阻挡层包括溅镀过程传递的例如铬或钛等元素。优选的情况是，所述环境包括环境温度下在约10-3托到约10-2托范围内的压力。
先前区域下游的第三处理区域包括用于沉积用作背部接触层的金属层的环境。背部接触层包括为电流提供导电路径的厚度。此外，背部接触层用作太阳能电池堆叠的第一导电层。所述层可进一步用来防止例如杂质等化学化合物从衬底扩散到太阳能电池结构的其余部分，或者用作衬底层与太阳能电池结构的其余部分之间的热膨胀缓冲物。优选的情况是，背部接触层包括钼，然而，背部接触层可包括其它导电金属，例如铝、铜或银。
第四区域提供用于沉积p型半导体层的环境。如本文所使用，所述p型半导体层可用作吸收体生长的外延模板。优选的情况是，p型半导体层为同型I-IIIVI2材料，其中此材料的光学带隙高于p型吸收体层的平均光学带隙。举例来说，半导体层可包括Cu:Ga:Se、Cu:Al:Se，或Cu:In:Se与前述化合物中的任一者的合金。优选的情况是，可在10-6到10-2托的背景压力下在从环境温度直到约300℃的温度下通过溅镀过程传递所述材料。优选的情况是，温度范围为从环境温度到约200℃。
先前区域下游的第五区域提供用于沉积碱性材料以增强p型吸收体的生长和电力性能的环境。优选情况是，在环境温度下且在约10-6托到10-2托的压力范围下溅镀碱性材料。优选情况是，所述材料包括NaF、Na2Se、Na2S或KCI等化合物，其中厚度范围为从约150nm到约500nm。
也在先前区域下游的第六区域可包括用于沉积包括p型吸收体层的前体材料的额外半导体层的环境。在优选实施例中，第六区域可进一步包括一个或一个以上用于沉积前体层的子区域。在一个实施例中，所述层通过以下方式形成：首先在一个或一个以上连续子区域中传递前体材料，然后在下游热处理区域中将前体材料反应成为最终p型吸收体。因此，特别是对于CIGS系统而言，在层的格式中，可存在两个材料沉积步骤和第三热处理步骤。
在前体传递区域中，以多种方式沉积前体材料层，其中包含蒸镀、溅镀和化学气相沉积或其组合。优选情况是，可在从约200℃-300℃的温度范围下传递前体材料。需要使前体材料反应以尽可能快速地形成最终p型吸收体。如前所述，为此目的，可将前体层形成为薄层的混合物或形成为一系列薄层。
制造装置也可具有先前处理区域下游的第七处理区域，其用于对一个或一个以上先前层进行热处理。术语“多元物”包含二元物、三元物等。优选情况是，热处理使得先前不反应的元素或多元物发生反应。举例来说，在一个实施例中，优选具有呈各种组合形式且具有元素的多元化合物的各种比率的铜、铟、硒和镓作为沉积在工件上的来源。反应环境包含成不同比例的硒和硫，且温度范围为从约400℃到约600℃，具有或不具有背景惰性气体环境。在各种实施例中，可通过优化前体的混合方式来将处理时间最小化到一分钟或更少。环境内的最佳压力取决于环境是反应性的还是惰性的。根据本发明，在热处理区域内，压力范围为从约10-5到约10-2托。然而，应注意，这些范围在很大程度上取决于作为整体的阶段的反应器设计、光电装置的设计者以及设备的操作变量。
反应器可具有用于形成n型半导体层或结伴体的第八处理区域。结缓冲层从II-VI或IIIX VI族中选出。举例来说，结缓冲层可包括通过蒸镀、升华或化学气相沉积方法沉积的ZnO、ZnSe、ZnS、In、Se或InNS。温度范围为从约200℃到约400℃。
此外，所述过程还可具有第九区域，其具有用于沉积透明氧化物(例如ZnO)的本征层的环境。根据本发明，所述本征透明氧化层可通过多种方法沉积，其中包含(例如)RF溅镀、CVD或MOCVD。
在各实施例中，所述过程进一步具有第十区域，其具有用于沉积透明导电氧化层以用作太阳能电池的顶部电极的环境。在一个实施例中，举例来说，以溅镀方式沉积掺杂有铝的ZnO。优选情况是，所述环境包括约200℃的温度和约5毫托的压力。或者，可使用ITO(氧化铟锡)或类似物。
如上所述，在一个实施例中，反应器可包括离散的区域，其中每个区域对应于光电装置的一层的形成。然而，在优选实施例中，可组合包括类似成份和/或环境条件的区域，因此减少反应器中的区域的总数。
举例来说，在图6中，区域610包括子区域611和612，区域615包括子区域616和617，且区域620包括一个区域，其中每个区域和子区域包括预定的环境。在此实例中，可在子区域611中沉积材料A，且可在子区域612中沉积不同的材料B，其中材料A下游的子区域612的环境不同于子区域611中的环境。因此，衬底605当在相同区域610的不同区域中时可经历不同的温度或其它过程曲线。根据此实施例，区域可界定为具有预定压力，且区域可包含一个或一个以上区域、子区域或其中的阶段，其中每个子区域经配置以在相同的压力环境内使所要材料沉积或反应。
接着，可将衬底605传递到室615，其中在子区域616内沉积材料C，且在子区域617内沉积材料D。最终，衬底605到达区域620，在其中沉积单个材料E。
所属领域的技术人员将了解，反应器600可如所述般具有沿着衬底的平移所界定的路径安置在反应器的入口与出口之间的一系列区域。在每个区域内，可提供一个或一个以上组成环境或子区域，以使选定的靶材沉积或反应，从而形成用于形成太阳能电池堆叠的连续过程。一旦衬底进入反应器，太阳能堆叠的各层便以循序方式沉积和形成，其中连续的每个下游过程用于形成太阳能电池堆叠，直到在反应器的出口处提供完成的薄膜太阳能电池为止。
虽然依据基于CIGS的光电堆叠设计表述了本项技术，但应当了解，也可使用此项技术来生产其它光电设计，其中包含生产基于硅的系统，例如现有技术中论述的系统。举例来说，将可能在氢化的非晶硅合金中使用或包含碳或锗原子，以便调整其光学带隙。举例来说，碳的带隙大于硅，且因此在氢化的非晶硅合金中包含碳会增大合金的带隙。相反，锗的带隙小于硅，且因此在氢化的非晶硅合金中包含锗会减小合金的带隙。
类似地，可在氢化的非晶硅合金中并入硼或磷原子，以便调整其导电属性。在氢化的非晶硅合金中包含硼会形成正性掺杂的导电区域。相反，在氢化的非晶硅合金中包含磷会形成负性掺杂的导电区域。
通过在沉积室中进行沉积来制备氢化的非晶硅合金薄膜。至此，在通过在沉积室中进行沉积来制备氢化的非晶硅合金的过程中，通过在沉积气体混合物中包含含有碳、锗、硼或磷的气体(例如甲烷(CH4)、锗烷(GeH4)、四氟化锗(GeF4)、高价锗烷，例如乙锗烷(Ge2H6)、乙硼烷(B2H6)或磷化氢(PH3))来在合金中并入碳、锗、硼或磷。参看(例如第4,491,626号、第4,142,195号、第4,363,828号、第4,504,518号、第4,344,984号、第4,435,445号和第4,394,400号美国专利。然而，此项实践的缺点在于，无法控制将碳、锗、硼或磷原子并入氢化的非晶硅合金的方式。也就是说，这些元素以高度随机的方式并入所得合金中，从而增加了不合需要的化学键的可能性。
因此，在制造PV装置且需要用特定的且受控制的反应和/或沉积条件来生产PV的薄膜时，本发明的技术将是有用的。
Claims (6)
1.一种用于制造光电装置的设备，其包括：
用于将垂直定向的衬底提供到第一反应区域的构件；
多个反应区域，其至少包含：
能够提供用于沉积背部接触层的环境的区域；
能够提供用于沉积p型半导体层的环境的区域；和
能够提供用于沉积n型半导体层的环境的区域。
2.根据权利要求1所述的设备，其中所述用于提供垂直定向的衬底的构件是用于将托盘传输通过所述多个反应区域的基于托盘的系统和构件。
3.根据权利要求1所述的设备，其进一步包括用于将垂直定向的衬底传输到所述多个反应区域的第二构件。
4.一种用于制造光电装置的方法，其包括：将能够垂直地固持衬底的构件依次提供到多个反应器区域，其中所述多个区域包含至少一个沉积p型半导体层的区域。
5.一种用于制造光电电池的方法，其包括：
a.提供多个垂直安置的衬底；
b.在所述多个衬底的表面上沉积导电薄膜；
c.其中所述导电薄膜包含由导电材料形成的多个离散层；和
d.在p型吸收体层上沉积n型半导体层，从而形成p-n结。
6.根据权利要求5所述的方法，其进一步在所述导电薄膜上沉积至少一个p型半导体层，其中所述p型半导体层包含基于铜铟二硒的合金材料。
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- 2005-11-10 EP EP05818599A patent/EP1809786A2/en not_active Withdrawn
- 2005-11-10 WO PCT/US2005/040743 patent/WO2006053128A2/en active Application Filing
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| CN102084500B (zh) * | 2008-04-18 | 2014-10-08 | 东电电子太阳能股份公司 | 用于光伏器件的装配线 |
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| CN101410547A (zh) | 2009-04-15 |
| CN101443929A (zh) | 2009-05-27 |
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| WO2006053128A2 (en) | 2006-05-18 |
| TW200637022A (en) | 2006-10-16 |
| CN101094726A (zh) | 2007-12-26 |
| US20060102230A1 (en) | 2006-05-18 |
| JP2008520103A (ja) | 2008-06-12 |
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| WO2006053129A3 (en) | 2007-02-15 |
| TW200703672A (en) | 2007-01-16 |
| TW200634170A (en) | 2006-10-01 |
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