ATE244777T1 - Rechteckige vakuumlichtbogenplasmaquelle - Google Patents

Rechteckige vakuumlichtbogenplasmaquelle

Info

Publication number
ATE244777T1
ATE244777T1 AT95917050T AT95917050T ATE244777T1 AT E244777 T1 ATE244777 T1 AT E244777T1 AT 95917050 T AT95917050 T AT 95917050T AT 95917050 T AT95917050 T AT 95917050T AT E244777 T1 ATE244777 T1 AT E244777T1
Authority
AT
Austria
Prior art keywords
rectangular
plasma
arc
source
cathode
Prior art date
Application number
AT95917050T
Other languages
English (en)
Inventor
Richard P Welty
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Application granted granted Critical
Publication of ATE244777T1 publication Critical patent/ATE244777T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055Arc discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325Electric arc evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Arc Welding In General (AREA)
  • Discharge Heating (AREA)
AT95917050T 1994-04-25 1995-04-25 Rechteckige vakuumlichtbogenplasmaquelle ATE244777T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/233,006 US5480527A (en) 1994-04-25 1994-04-25 Rectangular vacuum-arc plasma source
PCT/US1995/004786 WO1995029272A1 (en) 1994-04-25 1995-04-25 Rectangular vacuum-arc plasma source

Publications (1)

Publication Number Publication Date
ATE244777T1 true ATE244777T1 (de) 2003-07-15

Family

ID=22875490

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95917050T ATE244777T1 (de) 1994-04-25 1995-04-25 Rechteckige vakuumlichtbogenplasmaquelle

Country Status (9)

Country Link
US (2) US5480527A (de)
EP (1) EP0758408B1 (de)
JP (1) JP3868483B2 (de)
KR (1) KR100361620B1 (de)
AT (1) ATE244777T1 (de)
AU (1) AU695441B2 (de)
CA (1) CA2188799A1 (de)
DE (1) DE69531240D1 (de)
WO (1) WO1995029272A1 (de)

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US5972185A (en) * 1997-08-30 1999-10-26 United Technologies Corporation Cathodic arc vapor deposition apparatus (annular cathode)
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US6465780B1 (en) * 1999-03-31 2002-10-15 The Regents Of The University Of California Filters for cathodic arc plasmas
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JP4000764B2 (ja) * 2000-09-18 2007-10-31 日新電機株式会社 真空アーク蒸発装置
JP2002105628A (ja) 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP4085593B2 (ja) * 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
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US7381311B2 (en) * 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
JP4319556B2 (ja) * 2004-01-28 2009-08-26 浩史 滝川 プラズマ生成装置
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JP5424744B2 (ja) * 2009-07-01 2014-02-26 株式会社フェローテック 分割環状リブ型プラズマ処理装置
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JP5606777B2 (ja) * 2010-04-22 2014-10-15 株式会社フェローテック プラズマ流生成方法、プラズマ処理方法、プラズマ発生装置及びプラズマ処理装置
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JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
JP6347414B2 (ja) * 2014-11-04 2018-06-27 日新イオン機器株式会社 質量分析電磁石
JP7082789B2 (ja) * 2017-12-26 2022-06-09 株式会社オンワード技研 真空アークプラズマ蒸着装置の先端防汚型着火装置
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DE102020215892A1 (de) 2020-12-15 2022-06-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung zur Ausbildung von amorphen Kohlenstoffschichten auf Bauteiloberflächen mit reduzierter Oberflächenrauheit
KR102406350B1 (ko) 2022-03-31 2022-06-08 주식회사 조양 플라즈마 생성용 가스 도관 제조방법 및 이에 따라 제조된 가스 도관
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Also Published As

Publication number Publication date
JP3868483B2 (ja) 2007-01-17
JPH10505633A (ja) 1998-06-02
AU2388795A (en) 1995-11-16
EP0758408A1 (de) 1997-02-19
EP0758408A4 (de) 2000-01-26
CA2188799A1 (en) 1995-11-02
US5480527A (en) 1996-01-02
AU695441B2 (en) 1998-08-13
DE69531240D1 (de) 2003-08-14
WO1995029272A1 (en) 1995-11-02
KR100361620B1 (ko) 2003-02-17
US5840163A (en) 1998-11-24
EP0758408B1 (de) 2003-07-09

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