JP5424744B2 - 分割環状リブ型プラズマ処理装置 - Google Patents
分割環状リブ型プラズマ処理装置 Download PDFInfo
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- JP5424744B2 JP5424744B2 JP2009157103A JP2009157103A JP5424744B2 JP 5424744 B2 JP5424744 B2 JP 5424744B2 JP 2009157103 A JP2009157103 A JP 2009157103A JP 2009157103 A JP2009157103 A JP 2009157103A JP 5424744 B2 JP5424744 B2 JP 5424744B2
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- 238000012545 processing Methods 0.000 title claims description 86
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 2
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- 239000012634 fragment Substances 0.000 description 12
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Treatment Of Fiber Materials (AREA)
Description
10 プラズマ発生部
11 陰極
12 トリガ電極
13 プラズマ発生部の壁面
14 溝部
20 絶縁プレート
21 プラズマ流
22 ドロップレット
30 プラズマ進行管
31 内周管
32 絶縁部
40 多分割型環状リブ
40a 第1環状リブ
40b 第2環状リブ
41 プラズマ進行管接合部
42 リブ片
43 基端リブ部
44 切目
45 非分割リブ部
50 折曲部
60 プラズマ水平進行管
61 終端部絶縁プレート
80 陰極交換部
81 交換用陰極
82 モータ
83 陰極交換台
84 陰極昇降台
85 グラインダ
86 グラインダ用モータ
90 堆積物
91 堆積物の小型破片
92 ドロップレット堆積物
101 従来型のプラズマ処理装置
110 プラズマ発生部
111 陰極
112 トリガ電極
113 プラズマ発生部の壁面
114 溝部
120 絶縁プレート
130 プラズマ進行管
140 環状リブ
140 従来型の環状リブ
141 プラズマ進行管接合部
150 折曲部
160 プラズマ水平進行管
190 堆積物
191 堆積物の大型破片
Claims (16)
- プラズマ発生部において放電により発生されたプラズマをドロップレット捕集用の複数の環状リブを内面に配置したプラズマ進行管を介してプラズマ処理部まで輸送するプラズマ処理装置において、前記環状リブの中で前記プラズマに曝露される最先端の第1環状リブを複数の切目を介して複数のリブ片に分割した多分割型環状リブから少なくとも構成することを特徴とする分割環状リブ型プラズマ処理装置。
- 前記第1環状リブよりもプラズマ流の下流側に隣接される第2環状リブを前記多分割型環状リブから構成し、前記第1環状リブの全ての切目を前記第2環状リブのリブ片で遮蔽するように前記第2環状リブを配置する請求項1に記載の分割環状リブ型プラズマ処理装置。
- 前記第2環状リブよりもプラズマ流の下流側に配置される複数の環状リブの内、プラズマに曝露され易い位置に配置される環状リブを前記多分割型環状リブから構成する請求項2に記載の分割環状リブ型プラズマ処理装置。
- 前記第2環状リブよりもプラズマ流の下流側に配置される全ての環状リブを前記多分割型環状リブから構成する請求項2に記載の分割環状リブ型プラズマ処理装置。
- 前記第1環状リブと前記第2環状リブの間隔は、他の環状リブの相互の間隔よりも、長短自在に調整できる請求項2〜4のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記分割型環状リブの少なくとも2個が異なる形状を有する請求項2〜5のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記切目が前記多分割型環状リブの全幅に亘って形成される請求項1〜6のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記切目が前記多分割型環状リブの内部から前記多分割型環状リブの幅の一部に亘って形成される請求項1〜6のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記多分割型環状リブが外部から内部に向かって下方へ斜行する請求項1〜8のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記多分割型環状リブが前記プラズマ進行管の中心軸に垂直である請求項1〜8のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記多分割型環状リブの前記リブ片及び/又は前記切目の面積、形状及び/又は傾斜角度が不均一である請求項1〜8のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記プラズマ進行管の内部に内周管が配置され、前記内周管の内部に前記多分割型環状リブ部が配置される請求項1〜11のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記プラズマ進行管と前記内周管の間に絶縁部を介装して、前記プラズマ進行管と前記内周管を相互に電気的に独立させた請求項12に記載の分割環状リブ型プラズマ処理装置。
- 前記プラズマ発生部と前記プラズマ進行管の間に始端絶縁プレートを介装して、前記プラズマ発生部と前記プラズマ進行管を相互に電気的に独立させた請求項1〜13のいずれかに記載の分割環状リブ型プラズマ処理装置。
- 前記プラズマ進行管から供給されるプラズマにより被処理物を処理するプラズマ処理部と前記プラズマ進行管の間に終端絶縁プレートを介装して、前記プラズマ処理部と前記プラズマ進行管を相互に電気的に独立させた請求項1〜14に記載の分割環状リブ型プラズマ処理装置。
- 前記分割環状リブ型プラズマ処理装置において、前記プラズマ発生部の放電位置に配設される前記陰極と、前記放電位置から隔離された待機位置に配置される交換用陰極と、前記交換用陰極の表面を研磨する陰極研磨部と、前記陰極と前記交換用陰極を交換する陰極交換機構を具備する請求項1〜15のいずれかに記載の分割環状リブ型プラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009157103A JP5424744B2 (ja) | 2009-07-01 | 2009-07-01 | 分割環状リブ型プラズマ処理装置 |
SG2011096344A SG177373A1 (en) | 2009-07-01 | 2010-06-30 | Divided annular rib type plasma processing apparatus |
PCT/JP2010/061193 WO2011002036A1 (ja) | 2009-07-01 | 2010-06-30 | 分割環状リブ型プラズマ処理装置 |
CN201080028940.1A CN102471872B (zh) | 2009-07-01 | 2010-06-30 | 分割环状肋型等离子处理装置 |
US13/265,316 US8833299B2 (en) | 2009-07-01 | 2010-06-30 | Divided annular rib type plasma processing apparatus |
Applications Claiming Priority (1)
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JP2009157103A JP5424744B2 (ja) | 2009-07-01 | 2009-07-01 | 分割環状リブ型プラズマ処理装置 |
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JP2011012306A JP2011012306A (ja) | 2011-01-20 |
JP5424744B2 true JP5424744B2 (ja) | 2014-02-26 |
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US (1) | US8833299B2 (ja) |
JP (1) | JP5424744B2 (ja) |
CN (1) | CN102471872B (ja) |
SG (1) | SG177373A1 (ja) |
WO (1) | WO2011002036A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5424744B2 (ja) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | 分割環状リブ型プラズマ処理装置 |
JP5860063B2 (ja) * | 2011-12-22 | 2016-02-16 | キヤノンアネルバ株式会社 | 基板処理装置 |
CN103295867B (zh) * | 2012-02-29 | 2016-12-28 | 细美事有限公司 | 等离子体边界限制器单元和用于处理基板的设备 |
US11114289B2 (en) * | 2016-04-27 | 2021-09-07 | Applied Materials, Inc. | Non-disappearing anode for use with dielectric deposition |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59207620A (ja) * | 1983-05-10 | 1984-11-24 | Zenko Hirose | アモルフアスシリコン成膜装置 |
DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
DE3835153A1 (de) * | 1988-10-15 | 1990-04-26 | Leybold Ag | Vorrichtung zum aetzen von substraten durch eine glimmentladung |
JPH0394069A (ja) * | 1989-09-05 | 1991-04-18 | Mitsubishi Electric Corp | 薄膜形成装置 |
US5279723A (en) * | 1992-07-30 | 1994-01-18 | As Represented By The United States Department Of Energy | Filtered cathodic arc source |
US5480527A (en) * | 1994-04-25 | 1996-01-02 | Vapor Technologies, Inc. | Rectangular vacuum-arc plasma source |
JP2748886B2 (ja) * | 1995-03-31 | 1998-05-13 | 日本電気株式会社 | プラズマ処理装置 |
JP3868020B2 (ja) * | 1995-11-13 | 2007-01-17 | キヤノンアネルバ株式会社 | 遠距離スパッタ装置及び遠距離スパッタ方法 |
US5945354A (en) * | 1997-02-03 | 1999-08-31 | Motorola, Inc. | Method for reducing particles deposited onto a semiconductor wafer during plasma processing |
KR100230279B1 (ko) * | 1997-03-31 | 1999-11-15 | 윤종용 | 음극 아크 방전을 이용한 박막 증착장치 |
US6475353B1 (en) * | 1997-05-22 | 2002-11-05 | Sony Corporation | Apparatus and method for sputter depositing dielectric films on a substrate |
US5879523A (en) * | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
US6221202B1 (en) * | 1999-04-01 | 2001-04-24 | International Business Machines Corporation | Efficient plasma containment structure |
US20080156657A1 (en) * | 2000-02-17 | 2008-07-03 | Butterfield Paul D | Conductive polishing article for electrochemical mechanical polishing |
US6296747B1 (en) * | 2000-06-22 | 2001-10-02 | Applied Materials, Inc. | Baffled perforated shield in a plasma sputtering reactor |
US6645357B2 (en) * | 2001-11-05 | 2003-11-11 | Applied Materials, Inc. | Mesh shield in a sputter reactor |
US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
US6743340B2 (en) * | 2002-02-05 | 2004-06-01 | Applied Materials, Inc. | Sputtering of aligned magnetic materials and magnetic dipole ring used therefor |
US6730174B2 (en) * | 2002-03-06 | 2004-05-04 | Applied Materials, Inc. | Unitary removable shield assembly |
JP4330315B2 (ja) * | 2002-03-29 | 2009-09-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
US7468104B2 (en) * | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US7048837B2 (en) * | 2002-09-13 | 2006-05-23 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7001491B2 (en) * | 2003-06-26 | 2006-02-21 | Tokyo Electron Limited | Vacuum-processing chamber-shield and multi-chamber pumping method |
JP2005054230A (ja) * | 2003-08-04 | 2005-03-03 | Nissin Electric Co Ltd | 真空アーク蒸着装置 |
US7182816B2 (en) * | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
JP4889957B2 (ja) * | 2005-03-25 | 2012-03-07 | 株式会社フェローテック | プラズマ生成装置におけるドロップレット除去装置及びドロップレット除去方法 |
JP2007297704A (ja) * | 2006-04-05 | 2007-11-15 | Seiko Epson Corp | 蒸着装置、蒸着方法、及び電気光学装置の製造方法、並びに成膜装置 |
US20080017501A1 (en) * | 2006-07-21 | 2008-01-24 | Makoto Inagawa | Cooled dark space shield for multi-cathode design |
JP4660452B2 (ja) * | 2006-09-30 | 2011-03-30 | 株式会社フェローテック | 拡径管型プラズマ生成装置 |
JP5189784B2 (ja) * | 2007-03-30 | 2013-04-24 | 株式会社フェローテック | プラズマガン周辺を電気的中性にしたプラズマ生成装置 |
US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
US20090206521A1 (en) * | 2008-02-14 | 2009-08-20 | Bakir Begovic | Method of manufacturing liner for semiconductor processing chamber, liner and chamber including the liner |
JP5264231B2 (ja) * | 2008-03-21 | 2013-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
TW201001520A (en) * | 2008-06-17 | 2010-01-01 | Shih Her Technologies Inc | Ceramic coating on surface of component in pre-clean chamber for semiconductor fabrication apparatus |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
EP2382648B1 (en) * | 2008-12-23 | 2016-10-05 | Oerlikon Advanced Technologies AG | Rf sputtering arrangement |
JP5424744B2 (ja) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | 分割環状リブ型プラズマ処理装置 |
KR101091309B1 (ko) * | 2009-08-18 | 2011-12-07 | 주식회사 디엠에스 | 플라즈마 식각장치 |
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2009
- 2009-07-01 JP JP2009157103A patent/JP5424744B2/ja active Active
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2010
- 2010-06-30 SG SG2011096344A patent/SG177373A1/en unknown
- 2010-06-30 WO PCT/JP2010/061193 patent/WO2011002036A1/ja active Application Filing
- 2010-06-30 US US13/265,316 patent/US8833299B2/en active Active
- 2010-06-30 CN CN201080028940.1A patent/CN102471872B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
SG177373A1 (en) | 2012-02-28 |
CN102471872A (zh) | 2012-05-23 |
US8833299B2 (en) | 2014-09-16 |
US20120031337A1 (en) | 2012-02-09 |
CN102471872B (zh) | 2014-03-05 |
JP2011012306A (ja) | 2011-01-20 |
WO2011002036A1 (ja) | 2011-01-06 |
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