CN100489149C - 薄膜的形成方法及其形成装置 - Google Patents
薄膜的形成方法及其形成装置 Download PDFInfo
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- CN100489149C CN100489149C CNB200480014269XA CN200480014269A CN100489149C CN 100489149 C CN100489149 C CN 100489149C CN B200480014269X A CNB200480014269X A CN B200480014269XA CN 200480014269 A CN200480014269 A CN 200480014269A CN 100489149 C CN100489149 C CN 100489149C
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 229
- 239000000758 substrate Substances 0.000 claims abstract description 142
- 230000003287 optical effect Effects 0.000 claims abstract description 68
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 239000000376 reactant Substances 0.000 claims description 61
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 230000008676 import Effects 0.000 claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 229910052710 silicon Inorganic materials 0.000 description 43
- 239000010703 silicon Substances 0.000 description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
- 239000001301 oxygen Substances 0.000 description 33
- 229910052760 oxygen Inorganic materials 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 230000003647 oxidation Effects 0.000 description 22
- 238000007254 oxidation reaction Methods 0.000 description 22
- 230000009467 reduction Effects 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 13
- 239000012528 membrane Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 229960001866 silicon dioxide Drugs 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000012495 reaction gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 150000003254 radicals Chemical class 0.000 description 7
- 230000006698 induction Effects 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 indium tin metals Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000000077 insect repellent Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
旋转速度(rpm) | 反应前的成膜速度(nm/s) | 溅射时间(s) | 反应前膜厚(nm) | 反应时间(s) |
150 | 0.2 | 5.63E-2 | 1.13E-2 | 5.39E-2 |
140 | 0.2 | 6.04E-2 | 1.21E-2 | 5.77E-2 |
130 | 0.2 | 6.50E-2 | 1.30E-2 | 6.22E-2 |
120 | 0.2 | 7.04E-2 | 1.41E-2 | 6.74E-2 |
110 | 0.2 | 7.68E-2 | 1.54E-2 | 7.35E-2 |
100 | 0.2 | 8.45E-2 | 1.69E-2 | 8.08E-2 |
90 | 0.2 | 9.39E-2 | 1.88E-2 | 8.98E-2 |
80 | 0.2 | 1.06E-1 | 2.11E-2 | 1.01E-1 |
70 | 0.2 | 1.21E-1 | 2.41E-2 | 1.15E-1 |
60 | 0.2 | 1.41E-1 | 2.82E-2 | 1.35E-1 |
50 | 0.2 | 1.69E-1 | 3.83E-2 | 1.62E-1 |
40 | 0.2 | 2.11E-1 | 4.23E-2 | 2.02E-1 |
30 | 0.2 | 2.82E-1 | 5.63E-2 | 2.69E-1 |
20 | 0.2 | 4.23E-1 | 8.45E-2 | 4.04E-1 |
10 | 0.2 | 8.45E-1 | 1.69E-1 | 8.08E-1 |
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP158253/2003 | 2003-06-03 | ||
JP2003158253 | 2003-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1795286A CN1795286A (zh) | 2006-06-28 |
CN100489149C true CN100489149C (zh) | 2009-05-20 |
Family
ID=33508423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200480014269XA Expired - Lifetime CN100489149C (zh) | 2003-06-03 | 2004-06-02 | 薄膜的形成方法及其形成装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060189046A1 (zh) |
EP (1) | EP1630248B1 (zh) |
JP (1) | JP3779317B2 (zh) |
KR (1) | KR100729031B1 (zh) |
CN (1) | CN100489149C (zh) |
HK (1) | HK1088366A1 (zh) |
WO (1) | WO2004108981A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110499508A (zh) * | 2018-05-18 | 2019-11-26 | 比亚迪股份有限公司 | 金属制品及其制备方法和应用 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4524354B2 (ja) * | 2008-02-28 | 2010-08-18 | 国立大学法人東北大学 | マイクロ波プラズマ処理装置、それに用いる誘電体窓部材および誘電体窓部材の製造方法 |
WO2010018639A1 (ja) * | 2008-08-15 | 2010-02-18 | 株式会社シンクロン | 蒸着装置及び薄膜デバイスの製造方法 |
CN102084025B (zh) * | 2008-09-05 | 2013-12-04 | 新柯隆株式会社 | 成膜方法以及防油性基材 |
GB2487681B (en) * | 2008-09-30 | 2013-01-23 | Canon Anelva Corp | Sputtering device and sputtering method |
JP5099101B2 (ja) * | 2009-01-23 | 2012-12-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20130071415A (ko) * | 2011-08-02 | 2013-06-28 | 신크론 컴퍼니 리미티드 | 탄화규소 박막의 성막방법 |
TWI595258B (zh) * | 2011-09-28 | 2017-08-11 | 萊寶光電有限公司 | 用於製造基板上之反射抑制層之方法與裝置 |
JP2017201651A (ja) * | 2016-05-02 | 2017-11-09 | 株式会社神戸製鋼所 | 酸化物半導体の製造方法 |
CN108690965B (zh) * | 2017-03-31 | 2020-06-30 | 芝浦机械电子装置株式会社 | 等离子体处理装置 |
JP7131916B2 (ja) * | 2017-03-31 | 2022-09-06 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4420385A (en) * | 1983-04-15 | 1983-12-13 | Gryphon Products | Apparatus and process for sputter deposition of reacted thin films |
US4986214A (en) * | 1986-12-16 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus |
US5124013A (en) * | 1988-02-08 | 1992-06-23 | Optical Coating Laboratory, Inc. | High ratio planetary drive system and method for vacuum chamber |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US5225057A (en) * | 1988-02-08 | 1993-07-06 | Optical Coating Laboratory, Inc. | Process for depositing optical films on both planar and non-planar substrates |
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US5798027A (en) * | 1988-02-08 | 1998-08-25 | Optical Coating Laboratory, Inc. | Process for depositing optical thin films on both planar and non-planar substrates |
EP0409451A1 (en) * | 1989-07-18 | 1991-01-23 | Optical Coating Laboratory, Inc. | Process for depositing optical thin films on both planar and non-planar substrates |
US5789071A (en) * | 1992-11-09 | 1998-08-04 | Northwestern University | Multilayer oxide coatings |
JP3293912B2 (ja) * | 1992-12-10 | 2002-06-17 | 松下電器産業株式会社 | 酸化物薄膜の形成方法 |
DE69331538T2 (de) * | 1992-12-01 | 2002-08-29 | Matsushita Electric Industrial Co., Ltd. | Verfahren zur Herstellung einer elektrischen Dünnschicht |
JPH08176821A (ja) * | 1994-12-26 | 1996-07-09 | Shincron:Kk | 薄膜形成方法および装置 |
JP3555797B2 (ja) * | 1996-03-11 | 2004-08-18 | 富士写真フイルム株式会社 | 成膜装置および成膜方法 |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
JP3735461B2 (ja) * | 1998-03-27 | 2006-01-18 | 株式会社シンクロン | 複合金属の化合物薄膜形成方法及びその薄膜形成装置 |
DE19824364A1 (de) * | 1998-05-30 | 1999-12-02 | Bosch Gmbh Robert | Verfahren zum Aufbringen eines Verschleißschutz-Schichtsystems mit optischen Eigenschaften auf Oberflächen |
JP2000017457A (ja) * | 1998-07-03 | 2000-01-18 | Shincron:Kk | 薄膜形成装置および薄膜形成方法 |
JP2000119846A (ja) * | 1998-10-13 | 2000-04-25 | Nikon Corp | 薄膜の製造方法 |
JP3738154B2 (ja) * | 1999-06-30 | 2006-01-25 | 株式会社シンクロン | 複合金属化合物の薄膜形成方法及びその薄膜形成装置 |
US7931787B2 (en) * | 2002-02-26 | 2011-04-26 | Donald Bennett Hilliard | Electron-assisted deposition process and apparatus |
-
2004
- 2004-06-02 JP JP2005506761A patent/JP3779317B2/ja not_active Expired - Lifetime
- 2004-06-02 WO PCT/JP2004/007609 patent/WO2004108981A1/ja active Application Filing
- 2004-06-02 EP EP04745508A patent/EP1630248B1/en not_active Expired - Lifetime
- 2004-06-02 KR KR1020057023032A patent/KR100729031B1/ko active IP Right Grant
- 2004-06-02 US US10/550,506 patent/US20060189046A1/en not_active Abandoned
- 2004-06-02 CN CNB200480014269XA patent/CN100489149C/zh not_active Expired - Lifetime
-
2006
- 2006-08-01 HK HK06108543.9A patent/HK1088366A1/xx not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110499508A (zh) * | 2018-05-18 | 2019-11-26 | 比亚迪股份有限公司 | 金属制品及其制备方法和应用 |
CN110499508B (zh) * | 2018-05-18 | 2021-11-12 | 比亚迪股份有限公司 | 金属制品及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
EP1630248B1 (en) | 2012-05-02 |
JP3779317B2 (ja) | 2006-05-24 |
JPWO2004108981A1 (ja) | 2006-07-20 |
HK1088366A1 (en) | 2006-11-03 |
CN1795286A (zh) | 2006-06-28 |
KR100729031B1 (ko) | 2007-06-14 |
WO2004108981A1 (ja) | 2004-12-16 |
EP1630248A1 (en) | 2006-03-01 |
KR20060012659A (ko) | 2006-02-08 |
EP1630248A4 (en) | 2008-11-12 |
US20060189046A1 (en) | 2006-08-24 |
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