DE60319662T2 - Piezoelektrischer Oszillator, dessen Herstellungsverfahren und elektronisches Bauteil - Google Patents

Piezoelektrischer Oszillator, dessen Herstellungsverfahren und elektronisches Bauteil Download PDF

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Publication number
DE60319662T2
DE60319662T2 DE60319662T DE60319662T DE60319662T2 DE 60319662 T2 DE60319662 T2 DE 60319662T2 DE 60319662 T DE60319662 T DE 60319662T DE 60319662 T DE60319662 T DE 60319662T DE 60319662 T2 DE60319662 T2 DE 60319662T2
Authority
DE
Germany
Prior art keywords
mounting
lead frame
connections
piezoelectric
piezoelectric oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60319662T
Other languages
German (de)
English (en)
Other versions
DE60319662D1 (de
Inventor
Yugo Koyama
Katsuhiko Miyazaki
Kazuhiko Shimodaira
Yukari Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60319662D1 publication Critical patent/DE60319662D1/de
Publication of DE60319662T2 publication Critical patent/DE60319662T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE60319662T 2002-12-10 2003-12-10 Piezoelektrischer Oszillator, dessen Herstellungsverfahren und elektronisches Bauteil Expired - Lifetime DE60319662T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2002358392 2002-12-10
JP2002358392 2002-12-10
JP2003106598 2003-04-10
JP2003106598 2003-04-10
JP2003171195 2003-06-16
JP2003171195 2003-06-16
JP2003334616 2003-09-26
JP2003334616A JP3918794B2 (ja) 2002-12-10 2003-09-26 圧電発振器およびその製造方法並びに電子機器

Publications (2)

Publication Number Publication Date
DE60319662D1 DE60319662D1 (de) 2008-04-24
DE60319662T2 true DE60319662T2 (de) 2009-04-02

Family

ID=32329972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60319662T Expired - Lifetime DE60319662T2 (de) 2002-12-10 2003-12-10 Piezoelektrischer Oszillator, dessen Herstellungsverfahren und elektronisches Bauteil

Country Status (4)

Country Link
US (2) US7123107B2 (enExample)
EP (1) EP1429459B1 (enExample)
JP (1) JP3918794B2 (enExample)
DE (1) DE60319662T2 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918794B2 (ja) * 2002-12-10 2007-05-23 セイコーエプソン株式会社 圧電発振器およびその製造方法並びに電子機器
JP4312616B2 (ja) * 2004-01-26 2009-08-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4238779B2 (ja) * 2004-05-28 2009-03-18 セイコーエプソン株式会社 圧電発振器および電子機器
JP2006165759A (ja) * 2004-12-03 2006-06-22 Nippon Dempa Kogyo Co Ltd 温度補償水晶発振器及びその製造方法
JP4311376B2 (ja) * 2005-06-08 2009-08-12 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器
TWM288015U (en) * 2005-08-26 2006-02-21 Inventec Appliances Corp Mobile phone antenna
JP2007074066A (ja) * 2005-09-05 2007-03-22 Seiko Epson Corp 圧電デバイス
US20070126316A1 (en) * 2005-12-01 2007-06-07 Epson Toyocom Corporation Electronic device
JP4240053B2 (ja) * 2006-04-24 2009-03-18 エプソントヨコム株式会社 圧電発振器とその製造方法
JP4973290B2 (ja) * 2006-06-12 2012-07-11 セイコーエプソン株式会社 プローブ接触用電極、パッケージ及び電子デバイス
JP4952083B2 (ja) * 2006-06-21 2012-06-13 セイコーエプソン株式会社 圧電発振器
JP4778064B2 (ja) * 2006-09-30 2011-09-21 シチズンファインテックミヨタ株式会社 圧電デバイス
US7681290B2 (en) * 2006-10-20 2010-03-23 The Boeing Company Piezoelectric bimorph beam manufacturing method
JP2008109429A (ja) * 2006-10-26 2008-05-08 Epson Toyocom Corp 圧電デバイス
JP5101093B2 (ja) * 2006-11-30 2012-12-19 京セラクリスタルデバイス株式会社 圧電発振器及びその製造方法
JP4976263B2 (ja) * 2006-12-28 2012-07-18 日本電波工業株式会社 表面実装用の水晶発振器
US7731219B2 (en) * 2007-04-23 2010-06-08 Cequent Trailer Products, Inc. Trailer tongue pivot hinge
JP5059478B2 (ja) * 2007-04-26 2012-10-24 日本電波工業株式会社 表面実装用の圧電発振器及び圧電振動子
WO2009025320A1 (ja) * 2007-08-23 2009-02-26 Daishinku Corporation 電子部品用パッケージ、電子部品用パッケージのベース、および電子部品用パッケージと回路基板との接合構造
US7876168B2 (en) * 2007-12-14 2011-01-25 Epson Toyocom Corporation Piezoelectric oscillator and method for manufacturing the same
JP5262530B2 (ja) * 2008-09-30 2013-08-14 セイコーエプソン株式会社 電子デバイス及び電子デバイスの製造方法
WO2010039946A2 (en) * 2008-10-03 2010-04-08 Cts Corporation Ovenized crystal oscillator assembly
JP2010190706A (ja) * 2009-02-18 2010-09-02 Panasonic Corp 慣性力センサ
WO2010114115A1 (ja) * 2009-04-03 2010-10-07 株式会社大真空 パッケージ部材集合体、パッケージ部材集合体の製造方法、パッケージ部材、およびパッケージ部材を用いた圧電振動デバイスの製造方法
JP5275155B2 (ja) * 2009-06-26 2013-08-28 セイコーインスツル株式会社 電子デバイスの製造方法
JP5362643B2 (ja) * 2009-06-30 2013-12-11 日本電波工業株式会社 積層型の水晶振動子
WO2011035200A1 (en) * 2009-09-18 2011-03-24 Gavin Ho Micromechanical network
WO2011118415A1 (ja) * 2010-03-24 2011-09-29 株式会社大真空 電子部品用パッケージのベース、電子部品用パッケージ
CN102456806A (zh) * 2010-10-26 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构
TWI420810B (zh) 2010-12-17 2013-12-21 Ind Tech Res Inst 石英振盪器及其製造方法
JP2012222537A (ja) * 2011-04-07 2012-11-12 Seiko Epson Corp パッケージ、振動子、発振器及び電子機器
JP5204271B2 (ja) * 2011-06-16 2013-06-05 株式会社東芝 内視鏡装置および基板
USD674364S1 (en) * 2011-07-08 2013-01-15 Nihon Dempa Kogyo Co., Ltd. Crystal unit
US9230890B2 (en) * 2012-04-27 2016-01-05 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
USD759022S1 (en) * 2013-03-13 2016-06-14 Nagrastar Llc Smart card interface
USD729808S1 (en) * 2013-03-13 2015-05-19 Nagrastar Llc Smart card interface
JP6127651B2 (ja) * 2013-03-29 2017-05-17 セイコーエプソン株式会社 電子デバイス、電子機器、移動体および電子デバイスの製造方法
JP2014236466A (ja) * 2013-06-05 2014-12-15 日本電波工業株式会社 デュアルモード水晶発振器
US10103709B2 (en) * 2013-11-05 2018-10-16 Kyocera Corporation Crystal unit
US20150188025A1 (en) * 2013-12-30 2015-07-02 Nihon Dempa Kogyo Co., Ltd. Container for electronic component and electronic component
JP6644457B2 (ja) * 2014-03-26 2020-02-12 Tdk株式会社 圧電デバイス
US9165869B1 (en) * 2014-07-11 2015-10-20 Freescale Semiconductor, Inc. Semiconductor device with twisted leads
JP6373115B2 (ja) * 2014-08-05 2018-08-15 日本特殊陶業株式会社 配線基板
USD760230S1 (en) * 2014-09-16 2016-06-28 Daishinku Corporation Piezoelectric vibration device
USD780763S1 (en) * 2015-03-20 2017-03-07 Nagrastar Llc Smart card interface
USD864968S1 (en) * 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
JP7143951B2 (ja) * 2019-07-17 2022-09-29 株式会社村田製作所 半導体モジュール
JP7747051B2 (ja) * 2021-09-30 2025-10-01 株式会社大真空 圧電振動デバイス

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587544A (en) 1978-12-26 1980-07-02 Toyo Aluminium Kk Preparation of metalized laminate
DE2918952C2 (de) 1979-05-10 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Elektrische Baugruppe
JPS63244905A (ja) 1987-03-30 1988-10-12 Matsushima Kogyo Co Ltd 圧電発振器
JPS63305604A (ja) 1987-06-08 1988-12-13 Matsushima Kogyo Co Ltd 圧電発振器
JPH0644537B2 (ja) 1987-09-25 1994-06-08 株式会社東芝 箔巻変圧器
GB2211021A (en) 1987-10-10 1989-06-21 Stc Plc Crystal oscillator
JPH0516724Y2 (enExample) 1987-11-20 1993-05-06
JPH0641196B2 (ja) 1987-12-01 1994-06-01 株式会社巴川製紙所 印刷用シート
JPH01189151A (ja) 1988-01-25 1989-07-28 Oki Electric Ind Co Ltd 面実装型半導体装置の外部リード
JPH01145140U (enExample) 1988-03-28 1989-10-05
JP2728263B2 (ja) 1988-06-15 1998-03-18 株式会社トプコン 眼鏡用画像処理装置
JPH024312U (enExample) 1988-06-20 1990-01-11
WO1991014282A1 (fr) 1990-03-15 1991-09-19 Fujitsu Limited Dispositif semiconducteur a puces multiples
JPH0429224A (ja) 1990-05-25 1992-01-31 Ricoh Co Ltd マルチ発光オートストロボ装置
JPH04116416A (ja) 1990-09-06 1992-04-16 Nissin Electric Co Ltd 光強度変調センサ
JPH04116416U (ja) 1991-03-28 1992-10-19 京セラ株式会社 水晶発振器
JPH04334202A (ja) 1991-05-10 1992-11-20 Seiko Epson Corp 圧電発振器
JPH0547990A (ja) 1991-08-07 1993-02-26 Ricoh Co Ltd 多層リードフレームと半導体装置実装体
US5479051A (en) * 1992-10-09 1995-12-26 Fujitsu Limited Semiconductor device having a plurality of semiconductor chips
JPH0730051A (ja) 1993-07-09 1995-01-31 Fujitsu Ltd 半導体装置
JPH07162236A (ja) 1993-12-03 1995-06-23 Seiko Epson Corp 圧電発振器及びその製造方法
JP3230742B2 (ja) 1994-07-04 2001-11-19 セイコーエプソン株式会社 圧電発振器
US5912592A (en) 1994-07-04 1999-06-15 Seiko Epson Corporation Piezoelectric oscillator
JP2621828B2 (ja) 1995-06-26 1997-06-18 セイコーエプソン株式会社 圧電発振器
TW372370B (en) 1995-08-25 1999-10-21 Mitsui Petroleum Chemicals Ind Supporting structure of piezoelectric vibrator parts and piezoelectric vibrator, and the method of packaging of piezoelectric vibrator
JPH09260740A (ja) 1996-03-19 1997-10-03 Mitsui Petrochem Ind Ltd 圧電トランスおよびその製造方法
JPH09219491A (ja) 1996-02-08 1997-08-19 Toshiba Corp リードフレーム及び半導体装置
KR100214561B1 (ko) 1997-03-14 1999-08-02 구본준 버틈 리드 패키지
JPH11284441A (ja) 1998-03-30 1999-10-15 Nippon Dempa Kogyo Co Ltd 温度補償水晶発振器の製造方法
JP2000031367A (ja) 1998-07-14 2000-01-28 Hitachi Ltd 半導体装置及びその製造方法
JP2000150720A (ja) 1998-11-05 2000-05-30 Fuji Electric Co Ltd 樹脂封止型半導体デバイス
JP2000150768A (ja) 1998-11-13 2000-05-30 Dainippon Printing Co Ltd リードフレーム部材とその製造方法および樹脂封止型半導体装置
JP2000323641A (ja) 1999-05-07 2000-11-24 Matsushita Electronics Industry Corp リードフレームおよびその製造方法
JP2001332932A (ja) 2000-05-22 2001-11-30 Daishinku Corp 圧電発振器
JP2002176318A (ja) 2000-09-27 2002-06-21 Citizen Watch Co Ltd 圧電発振器及びその実装構造
JP3436249B2 (ja) 2000-11-21 2003-08-11 株式会社大真空 圧電振動デバイス用パッケージおよび圧電発振器
JP2002330027A (ja) 2001-04-27 2002-11-15 Nippon Dempa Kogyo Co Ltd 表面実装用の温度補償水晶発振器
JP4222147B2 (ja) * 2002-10-23 2009-02-12 セイコーエプソン株式会社 圧電発振器及び圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP3918794B2 (ja) * 2002-12-10 2007-05-23 セイコーエプソン株式会社 圧電発振器およびその製造方法並びに電子機器
JP4222020B2 (ja) * 2002-12-17 2009-02-12 セイコーエプソン株式会社 圧電発振器
JP3841304B2 (ja) * 2004-02-17 2006-11-01 セイコーエプソン株式会社 圧電発振器、及びその製造方法

Also Published As

Publication number Publication date
JP2005033755A (ja) 2005-02-03
US20040135645A1 (en) 2004-07-15
EP1429459A3 (en) 2005-09-21
EP1429459A2 (en) 2004-06-16
EP1429459B1 (en) 2008-03-12
US7408291B2 (en) 2008-08-05
US20060238080A1 (en) 2006-10-26
JP3918794B2 (ja) 2007-05-23
DE60319662D1 (de) 2008-04-24
US7123107B2 (en) 2006-10-17

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