DE60225956T2 - Polierzusammensetzung und Polierverfahren unter ihrer Verwendung - Google Patents
Polierzusammensetzung und Polierverfahren unter ihrer Verwendung Download PDFInfo
- Publication number
- DE60225956T2 DE60225956T2 DE60225956T DE60225956T DE60225956T2 DE 60225956 T2 DE60225956 T2 DE 60225956T2 DE 60225956 T DE60225956 T DE 60225956T DE 60225956 T DE60225956 T DE 60225956T DE 60225956 T2 DE60225956 T2 DE 60225956T2
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- polishing composition
- hydroxide
- ammonium
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001027276A JP3440419B2 (ja) | 2001-02-02 | 2001-02-02 | 研磨用組成物およびそれを用いた研磨方法 |
JP2001027276 | 2001-02-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60225956D1 DE60225956D1 (de) | 2008-05-21 |
DE60225956T2 true DE60225956T2 (de) | 2009-05-20 |
Family
ID=18891966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60225956T Expired - Lifetime DE60225956T2 (de) | 2001-02-02 | 2002-01-30 | Polierzusammensetzung und Polierverfahren unter ihrer Verwendung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6852009B2 (fr) |
EP (1) | EP1229094B1 (fr) |
JP (1) | JP3440419B2 (fr) |
CN (1) | CN1266243C (fr) |
DE (1) | DE60225956T2 (fr) |
MY (1) | MY129070A (fr) |
SG (1) | SG114523A1 (fr) |
TW (1) | TWI245335B (fr) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
DE10247201A1 (de) * | 2002-10-10 | 2003-12-18 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer polierten Siliciumscheibe |
JP2004266155A (ja) * | 2003-03-03 | 2004-09-24 | Jsr Corp | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
EP1564797B1 (fr) * | 2002-11-08 | 2016-07-27 | Fujimi Incorporated | Compositions de polissage et de rincage |
JP2004247428A (ja) * | 2003-02-12 | 2004-09-02 | Fujimi Inc | 研磨用組成物及びそれを用いる研磨方法 |
KR100570122B1 (ko) * | 2003-05-12 | 2006-04-11 | 학교법인 한양학원 | 나노토포그라피 효과를 보상할 수 있는 화학기계적 연마용슬러리 조성물 및 이를 이용한 반도체소자의 표면 평탄화방법 |
JP4668528B2 (ja) * | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
JPWO2005090511A1 (ja) * | 2004-03-19 | 2008-01-31 | ▲吉▼田 和昭 | 研磨用組成物および研磨方法 |
JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2005347737A (ja) * | 2004-05-07 | 2005-12-15 | Nissan Chem Ind Ltd | シリコンウェハー用研磨組成物 |
JP2006005246A (ja) * | 2004-06-18 | 2006-01-05 | Fujimi Inc | リンス用組成物及びそれを用いたリンス方法 |
JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) * | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TW200619368A (en) * | 2004-10-28 | 2006-06-16 | Nissan Chemical Ind Ltd | Polishing composition for silicon wafer |
JP4808394B2 (ja) * | 2004-10-29 | 2011-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4487753B2 (ja) * | 2004-12-10 | 2010-06-23 | 株式会社Sumco | シリコンウェーハ用のアルカリエッチング液及び該エッチング液を用いたエッチング方法 |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
US7351662B2 (en) * | 2005-01-07 | 2008-04-01 | Dupont Air Products Nanomaterials Llc | Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization |
KR100662546B1 (ko) * | 2005-03-07 | 2006-12-28 | 제일모직주식회사 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
US7452481B2 (en) | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
US20090127501A1 (en) * | 2005-05-27 | 2009-05-21 | Nissan Chemical Industries, Ltd. | Polishing Composition for Silicon Wafer |
KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
JP4582798B2 (ja) * | 2006-02-09 | 2010-11-17 | ニチコン株式会社 | 電解コンデンサの駆動用電解液及びこれを用いた電解コンデンサ |
JP4582797B2 (ja) * | 2006-02-09 | 2010-11-17 | ニチコン株式会社 | 電解コンデンサの駆動用電解液及びこれを用いた電解コンデンサ |
DE102006008689B4 (de) | 2006-02-24 | 2012-01-26 | Lanxess Deutschland Gmbh | Poliermittel und dessen Verwendung |
JP5087855B2 (ja) * | 2006-04-05 | 2012-12-05 | 株式会社Sumco | 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法 |
JP5518334B2 (ja) | 2006-07-05 | 2014-06-11 | デュポン エア プロダクツ ナノマテリアルズ,リミティド ライアビリティ カンパニー | シリコンウエハ用研磨組成物、シリコンウエハの研磨方法およびシリコンウエハ用研磨組成物キット |
JP5335183B2 (ja) * | 2006-08-24 | 2013-11-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
KR100839355B1 (ko) * | 2006-11-28 | 2008-06-19 | 삼성전자주식회사 | 기판의 재생 방법 |
JP5148948B2 (ja) * | 2007-08-23 | 2013-02-20 | Sumco Techxiv株式会社 | 研磨用スラリーのリサイクル方法 |
US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
JP5474400B2 (ja) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
EP2352167B1 (fr) * | 2008-11-10 | 2017-02-15 | Asahi Glass Company, Limited | Composition abrasive et procédé de fabrication d'un dispositif à circuit intégré semi-conducteur |
JP5492603B2 (ja) * | 2010-03-02 | 2014-05-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
JP5551042B2 (ja) * | 2010-09-30 | 2014-07-16 | 株式会社クラレ | 化学的機械的研磨法およびそれに用いられるスラリー |
WO2012127398A1 (fr) * | 2011-03-22 | 2012-09-27 | Basf Se | Composition de polissage chimique-mécanique (cmp) comprenant une polyamine polymère |
JP2011181948A (ja) * | 2011-04-25 | 2011-09-15 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨パッドの目詰まり低減方法 |
ES2868093T3 (es) | 2012-09-17 | 2021-10-21 | Grace W R & Co | Medio y dispositivos de cromatografía |
CN104768536B (zh) | 2012-09-17 | 2019-03-29 | 格雷斯公司 | 官能化微粒状载体材料和其制备和使用方法 |
EP3094390B1 (fr) | 2014-01-16 | 2021-07-07 | W.R. Grace & CO. - CONN. | Supports de chromatographie d'affinité et dispositifs de chromatographie |
US11389783B2 (en) | 2014-05-02 | 2022-07-19 | W.R. Grace & Co.-Conn. | Functionalized support material and methods of making and using functionalized support material |
WO2016132676A1 (fr) * | 2015-02-19 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Composition de polissage de tranches de silicium et procédé de polissage |
US10695744B2 (en) | 2015-06-05 | 2020-06-30 | W. R. Grace & Co.-Conn. | Adsorbent biprocessing clarification agents and methods of making and using the same |
US10683439B2 (en) | 2018-03-15 | 2020-06-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
WO2020120641A1 (fr) | 2018-12-12 | 2020-06-18 | Basf Se | Polissage mécano-chimique de substrats contenant du cuivre et du ruthénium |
EP3894494A1 (fr) | 2018-12-12 | 2021-10-20 | Basf Se | Polissage mécano-chimique de substrats contenant du cuivre et du ruthénium |
KR20210102947A (ko) | 2018-12-12 | 2021-08-20 | 바스프 에스이 | 구리 및 루테늄을 함유하는 기판의 화학적 기계적 폴리싱 |
JPWO2023032714A1 (fr) * | 2021-09-01 | 2023-03-09 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
JPS63272460A (ja) | 1987-04-28 | 1988-11-09 | Mitsubishi Monsanto Chem Co | ウエハ−用研磨剤組成物 |
US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5916819A (en) * | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
AU2080999A (en) * | 1997-12-23 | 1999-07-12 | Akzo Nobel N.V. | A composition for chemical mechanical polishing |
JPH11349925A (ja) | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
JP4090589B2 (ja) | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2002528903A (ja) * | 1998-10-23 | 2002-09-03 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム |
US6569216B1 (en) * | 1998-11-27 | 2003-05-27 | Kao Corporation | Abrasive fluid compositions |
JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP3972274B2 (ja) | 1998-12-02 | 2007-09-05 | 信越半導体株式会社 | 半導体シリコンウェーハ研磨用研磨剤及び研磨方法 |
JP3551238B2 (ja) | 1999-09-07 | 2004-08-04 | 三菱住友シリコン株式会社 | シリコンウェーハの研磨液及びこれを用いた研磨方法 |
TW593674B (en) * | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US6280490B1 (en) * | 1999-09-27 | 2001-08-28 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
JP4213858B2 (ja) | 2000-02-03 | 2009-01-21 | 花王株式会社 | 研磨液組成物 |
US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
JP4585100B2 (ja) | 2000-08-24 | 2010-11-24 | 日本化学工業株式会社 | 研磨使用済み液の再生方法 |
-
2001
- 2001-02-02 JP JP2001027276A patent/JP3440419B2/ja not_active Expired - Lifetime
-
2002
- 2002-01-24 SG SG200200485A patent/SG114523A1/en unknown
- 2002-01-24 TW TW091101190A patent/TWI245335B/zh not_active IP Right Cessation
- 2002-01-30 MY MYPI20020337A patent/MY129070A/en unknown
- 2002-01-30 EP EP02250621A patent/EP1229094B1/fr not_active Expired - Lifetime
- 2002-01-30 DE DE60225956T patent/DE60225956T2/de not_active Expired - Lifetime
- 2002-02-01 CN CN02103447.8A patent/CN1266243C/zh not_active Expired - Lifetime
- 2002-02-01 US US10/060,198 patent/US6852009B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
MY129070A (en) | 2007-03-30 |
JP2002226836A (ja) | 2002-08-14 |
JP3440419B2 (ja) | 2003-08-25 |
EP1229094A3 (fr) | 2003-10-22 |
EP1229094B1 (fr) | 2008-04-09 |
DE60225956D1 (de) | 2008-05-21 |
EP1229094A2 (fr) | 2002-08-07 |
US6852009B2 (en) | 2005-02-08 |
SG114523A1 (en) | 2005-09-28 |
CN1369534A (zh) | 2002-09-18 |
US20020151252A1 (en) | 2002-10-17 |
CN1266243C (zh) | 2006-07-26 |
TWI245335B (en) | 2005-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |