DE60042110D1 - Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung - Google Patents

Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung

Info

Publication number
DE60042110D1
DE60042110D1 DE60042110T DE60042110T DE60042110D1 DE 60042110 D1 DE60042110 D1 DE 60042110D1 DE 60042110 T DE60042110 T DE 60042110T DE 60042110 T DE60042110 T DE 60042110T DE 60042110 D1 DE60042110 D1 DE 60042110D1
Authority
DE
Germany
Prior art keywords
power semiconductor
control circuit
semiconductor device
substrate
electronic components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042110T
Other languages
English (en)
Inventor
Takanobu Yoshida
Toshiaki Shinohara
Hisashi Kawafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60042110D1 publication Critical patent/DE60042110D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE60042110T 2000-03-07 2000-10-20 Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung Expired - Lifetime DE60042110D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000062220A JP4037589B2 (ja) 2000-03-07 2000-03-07 樹脂封止形電力用半導体装置

Publications (1)

Publication Number Publication Date
DE60042110D1 true DE60042110D1 (de) 2009-06-10

Family

ID=18582258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042110T Expired - Lifetime DE60042110D1 (de) 2000-03-07 2000-10-20 Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung

Country Status (4)

Country Link
US (1) US6313520B1 (de)
EP (1) EP1143514B1 (de)
JP (1) JP4037589B2 (de)
DE (1) DE60042110D1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1156528B1 (de) * 2000-05-08 2006-08-30 STMicroelectronics S.r.l. Elektrische Verbindungsstruktur für elektronische Leistungsbauelemente und Verbindungsmethode
US6856006B2 (en) * 2002-03-28 2005-02-15 Siliconix Taiwan Ltd Encapsulation method and leadframe for leadless semiconductor packages
KR100370231B1 (ko) * 2000-06-13 2003-01-29 페어차일드코리아반도체 주식회사 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지
US6545364B2 (en) * 2000-09-04 2003-04-08 Sanyo Electric Co., Ltd. Circuit device and method of manufacturing the same
US6798044B2 (en) * 2000-12-04 2004-09-28 Fairchild Semiconductor Corporation Flip chip in leaded molded package with two dies
US6486535B2 (en) * 2001-03-20 2002-11-26 Advanced Semiconductor Engineering, Inc. Electronic package with surface-mountable device built therein
JP2002314030A (ja) * 2001-04-12 2002-10-25 Mitsubishi Electric Corp 半導体装置
JP2002353404A (ja) * 2001-05-22 2002-12-06 Taiheiyo Seiko Kk インテリジェントパワースイッチ装置
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
US7061080B2 (en) * 2001-06-11 2006-06-13 Fairchild Korea Semiconductor Ltd. Power module package having improved heat dissipating capability
AU2002323936B2 (en) 2001-07-25 2008-02-21 Max Co., Ltd Reinforcing steel bar tying machine
KR100442847B1 (ko) * 2001-09-17 2004-08-02 페어차일드코리아반도체 주식회사 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법
JP3920629B2 (ja) * 2001-11-15 2007-05-30 三洋電機株式会社 半導体装置
US7145223B2 (en) * 2002-05-22 2006-12-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP3847691B2 (ja) 2002-09-26 2006-11-22 三菱電機株式会社 電力用半導体装置
JP3916072B2 (ja) * 2003-02-04 2007-05-16 住友電気工業株式会社 交流結合回路
DE102004032371A1 (de) * 2004-06-30 2006-01-26 Robert Bosch Gmbh Elektronische Schaltungseinheit
TW200642550A (en) * 2005-05-25 2006-12-01 Cyntec Co Ltd Power module package structure
EP1900022B1 (de) * 2005-07-01 2015-10-07 Vishay-Siliconix Vollständiges Leistungsverwaltungssystem in einer einzelnen oberflächenmontierten Packung
JP5378683B2 (ja) * 2005-08-31 2013-12-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
CN101253627B (zh) * 2005-08-31 2011-09-14 三洋电机株式会社 电路装置及其制造方法
DE102005061016B4 (de) 2005-12-19 2018-12-06 Infineon Technologies Ag Leistungshalbleitermodul, Verfahren zu seiner Herstellung und Verwendung in einem Schaltnetzteil
US8471374B2 (en) * 2006-02-21 2013-06-25 Stats Chippac Ltd. Integrated circuit package system with L-shaped leadfingers
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
DE102006033175A1 (de) * 2006-07-18 2008-01-24 Robert Bosch Gmbh Elektronikanordnung
US7659608B2 (en) * 2006-09-15 2010-02-09 Stats Chippac Ltd. Stacked die semiconductor device having circuit tape
US8294248B2 (en) * 2006-11-30 2012-10-23 Marvell World Trade Ltd. Chip on leads
US7642638B2 (en) * 2006-12-22 2010-01-05 United Test And Assembly Center Ltd. Inverted lead frame in substrate
KR101221807B1 (ko) * 2006-12-29 2013-01-14 페어차일드코리아반도체 주식회사 전력 소자 패키지
US20090051019A1 (en) * 2007-08-20 2009-02-26 Chih-Feng Huang Multi-chip module package
US20100193920A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Semiconductor device, leadframe and method of encapsulating
US8547709B2 (en) * 2010-02-12 2013-10-01 Cyntec Co. Ltd. Electronic system with a composite substrate
EP2581937B1 (de) * 2010-06-11 2017-09-06 Panasonic Intellectual Property Management Co., Ltd. Harzversiegeltes halbleiterbauelement und herstellungsverfahren dafür
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
US9287765B2 (en) 2010-07-15 2016-03-15 Delta Electronics, Inc. Power system, power module therein and method for fabricating power module
CN102339818B (zh) * 2010-07-15 2014-04-30 台达电子工业股份有限公司 功率模块及其制造方法
JP2012151163A (ja) * 2011-01-17 2012-08-09 Sanken Electric Co Ltd 半導体モジュール
JP5824672B2 (ja) * 2011-02-24 2015-11-25 パナソニックＩｐマネジメント株式会社 パワーモジュール
KR101231792B1 (ko) * 2011-03-17 2013-02-08 엘에스파워세미텍 주식회사 반도체 패키지
US8692377B2 (en) 2011-03-23 2014-04-08 Stats Chippac Ltd. Integrated circuit packaging system with plated leads and method of manufacture thereof
JP5518000B2 (ja) * 2011-06-10 2014-06-11 三菱電機株式会社 パワーモジュールとその製造方法
KR200483254Y1 (ko) 2012-01-06 2017-05-02 페어차일드코리아반도체 주식회사 반도체 패키지
JP5758816B2 (ja) * 2012-02-08 2015-08-05 三菱電機株式会社 パワー半導体装置
EP2680305A3 (de) * 2012-06-29 2014-02-26 Samsung Electro-Mechanics Co., Ltd Halbleitergehäuse
US20150075849A1 (en) * 2013-09-17 2015-03-19 Jia Lin Yap Semiconductor device and lead frame with interposer
JP6256145B2 (ja) 2014-03-26 2018-01-10 株式会社デンソー 半導体装置及びその製造方法
DE102015104995B4 (de) * 2015-03-31 2020-06-04 Infineon Technologies Austria Ag Verbindungshalbleitervorrichtung mit einem mehrstufigen Träger
CN108269778A (zh) * 2018-01-09 2018-07-10 深圳电通纬创微电子股份有限公司 一种双基岛sop芯片封装结构
CN110556370B (zh) * 2019-09-30 2024-03-29 桂林航天电子有限公司 微组装固体功率器件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160154A (ja) * 1984-01-30 1985-08-21 Nec Kansai Ltd Ｈｉｃ
JPS6114731A (ja) * 1984-06-29 1986-01-22 Nec Kansai Ltd 半導体装置
KR910001419B1 (ko) * 1987-03-31 1991-03-05 가부시키가이샤 도시바 수지봉합형 집적회로장치
JPH01194447A (ja) * 1988-01-29 1989-08-04 Ibiden Co Ltd 混成集積回路装置
JPH027455A (ja) * 1988-06-24 1990-01-11 Nec Corp 樹脂封止型混成集積回路
JPH0342846A (ja) * 1989-07-10 1991-02-25 Toshiba Corp ハイブリッド型樹脂封止半導体装置
US5291054A (en) * 1991-06-24 1994-03-01 Sanyo Electric Co., Ltd. Light receiving module for converting light signal to electric signal
JPH05218233A (ja) * 1992-02-06 1993-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH05226575A (ja) * 1992-02-13 1993-09-03 Mitsubishi Electric Corp 半導体装置
JP2708320B2 (ja) * 1992-04-17 1998-02-04 三菱電機株式会社 マルチチップ型半導体装置及びその製造方法
JP3193788B2 (ja) * 1992-10-06 2001-07-30 イビデン株式会社 電子部品搭載用基板
JP3183064B2 (ja) * 1994-10-31 2001-07-03 富士電機株式会社 半導体装置
JP3299421B2 (ja) * 1995-10-03 2002-07-08 三菱電機株式会社 電力用半導体装置の製造方法およびリードフレーム
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JP3201277B2 (ja) * 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JP3338063B2 (ja) * 1996-11-28 2002-10-28 三菱電機株式会社 半導体装置
EP0881680B1 (de) * 1996-11-28 2008-10-01 Mitsubishi Denki Kabushiki Kaisha Halbleitervorrichtung
US6184585B1 (en) * 1997-11-13 2001-02-06 International Rectifier Corp. Co-packaged MOS-gated device and control integrated circuit
JPH11233712A (ja) * 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びその製法とそれを使った電気機器

Also Published As

Publication number Publication date
EP1143514A2 (de) 2001-10-10
JP4037589B2 (ja) 2008-01-23
JP2001250911A (ja) 2001-09-14
EP1143514A3 (de) 2004-03-31
EP1143514B1 (de) 2009-04-29
US6313520B1 (en) 2001-11-06

Similar Documents

Publication Publication Date Title
DE60042110D1 (de) Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung
US7445957B2 (en) Method for fabricating wafer level semiconductor package with build-up layer
KR101075169B1 (ko) 파워 모듈 플립 칩 패키지
JP2004111965A (ja) 接着テープがボンディングワイヤに貼付けられた半導体チップパッケージ
KR960001604B1 (en) Semiconductor device with an encapsulation package
US6249433B1 (en) Heat-dissipating device for integrated circuit package
US5888849A (en) Method for fabricating an electronic package
JP2770947B2 (ja) 樹脂封止型半導体装置及びその製造方法
JP3628058B2 (ja) 樹脂封止型半導体装置
JPS6431443A (en) Semiconductor device
KR100221562B1 (ko) 볼 그리드 어레이 반도체 패키지의 구조 및 그 제조 방법
KR100233861B1 (ko) Bga 반도체 패키지
KR200276091Y1 (ko) 가요성 회로기판을 이용한 볼 그리드 어레이 반도체 패키지 제조용 몰딩 금형
JPH03160751A (ja) 半導体装置
KR100201379B1 (ko) 솔더블을 이용한 반도체 칩 부착방법 및 구조
JP4573472B2 (ja) 混成集積回路装置
KR100727728B1 (ko) 반도체 패키지
TW533518B (en) Substrate for carrying chip and semiconductor package having the same
KR0161621B1 (ko) 칩이 실장되는 공간이 형성된 기판을 적용한 칩 스케일 패키지
JPH02146751A (ja) 半導体装置
JPH1084055A (ja) 半導体装置及びその製造方法
KR20030045224A (ko) 와이어 본딩 방식의 칩 스케일 패키지 및 그 제조방법
KR200167587Y1 (ko) 반도체 패캐이지
JPH08306824A (ja) 樹脂封止型半導体装置
KR100244089B1 (ko) 볼 그리드 어레이 반도체 패키지의 제조방법 및 그 구조

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R084 Declaration of willingness to licence

Ref document number: 1143514

Country of ref document: EP

Effective date: 20110704