DE4003824A1 - Dynamischer speicher mit wahlfreiem zugriff mit einer mehrzahl von nennspannungen als betriebsversorgungsspannung und verfahren fuer dessen betreibung - Google Patents
Dynamischer speicher mit wahlfreiem zugriff mit einer mehrzahl von nennspannungen als betriebsversorgungsspannung und verfahren fuer dessen betreibungInfo
- Publication number
- DE4003824A1 DE4003824A1 DE4003824A DE4003824A DE4003824A1 DE 4003824 A1 DE4003824 A1 DE 4003824A1 DE 4003824 A DE4003824 A DE 4003824A DE 4003824 A DE4003824 A DE 4003824A DE 4003824 A1 DE4003824 A1 DE 4003824A1
- Authority
- DE
- Germany
- Prior art keywords
- signal
- sense amplifier
- operating
- dependent
- activation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 27
- 230000004913 activation Effects 0.000 claims description 66
- 230000001419 dependent effect Effects 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 21
- 230000003213 activating effect Effects 0.000 claims description 19
- 230000003321 amplification Effects 0.000 claims description 12
- 230000006870 function Effects 0.000 claims description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 11
- 230000003111 delayed effect Effects 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 22
- 230000004044 response Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011022 operating instruction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127114A JP2614514B2 (ja) | 1989-05-19 | 1989-05-19 | ダイナミック・ランダム・アクセス・メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4003824A1 true DE4003824A1 (de) | 1990-11-22 |
| DE4003824C2 DE4003824C2 (fr) | 1992-07-02 |
Family
ID=14951955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4003824A Granted DE4003824A1 (de) | 1989-05-19 | 1990-02-08 | Dynamischer speicher mit wahlfreiem zugriff mit einer mehrzahl von nennspannungen als betriebsversorgungsspannung und verfahren fuer dessen betreibung |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US5132932A (fr) |
| JP (1) | JP2614514B2 (fr) |
| KR (1) | KR930010938B1 (fr) |
| DE (1) | DE4003824A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4224048A1 (de) * | 1992-02-05 | 1993-08-12 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung, die auch bei variabler versorgungsspannung daten korrekt lesen kann |
| DE4429152A1 (de) * | 1993-08-20 | 1995-03-02 | Mitsubishi Electric Corp | Mikrocomputer |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2626160B2 (ja) * | 1990-04-27 | 1997-07-02 | 日本電気株式会社 | 半導体メモリ |
| JPH04341997A (ja) * | 1991-05-20 | 1992-11-27 | Mitsubishi Electric Corp | 半導体メモリ装置 |
| JP2756873B2 (ja) * | 1991-06-04 | 1998-05-25 | 三菱電機株式会社 | 半導体集積回路装置および半導体メモリ装置 |
| JP3373534B2 (ja) * | 1991-07-02 | 2003-02-04 | 株式会社東芝 | 半導体記憶装置 |
| JP2865469B2 (ja) * | 1992-01-24 | 1999-03-08 | 三菱電機株式会社 | 半導体メモリ装置 |
| JP2752304B2 (ja) * | 1992-10-21 | 1998-05-18 | 株式会社東芝 | 半導体記憶装置 |
| JPH06267275A (ja) * | 1993-03-10 | 1994-09-22 | Fujitsu Ltd | センスアンプ制御回路及びセンスアンプ制御方法 |
| JP3236105B2 (ja) * | 1993-03-17 | 2001-12-10 | 富士通株式会社 | 不揮発性半導体記憶装置及びその動作試験方法 |
| US5594699A (en) * | 1993-09-20 | 1997-01-14 | Fujitsu Limited | DRAM with reduced electric power consumption |
| KR0122108B1 (ko) * | 1994-06-10 | 1997-12-05 | 윤종용 | 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법 |
| US5701143A (en) * | 1995-01-31 | 1997-12-23 | Cirrus Logic, Inc. | Circuits, systems and methods for improving row select speed in a row select memory device |
| KR0158111B1 (ko) * | 1995-07-06 | 1999-02-01 | 김광호 | 반도체 메모리 장치의 센스앰프 제어회로 |
| US5627785A (en) * | 1996-03-15 | 1997-05-06 | Micron Technology, Inc. | Memory device with a sense amplifier |
| US5805838A (en) * | 1996-05-31 | 1998-09-08 | Sun Microsystems, Inc. | Fast arbiter with decision storage |
| US5708613A (en) * | 1996-07-22 | 1998-01-13 | International Business Machines Corporation | High performance redundancy in an integrated memory system |
| US5936905A (en) * | 1996-09-03 | 1999-08-10 | Townsend And Townsend And Crew Llp | Self adjusting delay circuit and method for compensating sense amplifier clock timing |
| US5712825A (en) * | 1996-10-09 | 1998-01-27 | International Business Machines Corporation | Maintaining data integrity in DRAM while varying operating voltages |
| US5717644A (en) * | 1996-10-09 | 1998-02-10 | International Business Machines Corporation | Apparatus for varying the refresh rate for a DRAM in response to variation in operating voltages and method thereof |
| US5748542A (en) * | 1996-12-13 | 1998-05-05 | Micron Technology, Inc. | Circuit and method for providing a substantially constant time delay over a range of supply voltages |
| JP3277192B2 (ja) * | 1996-12-27 | 2002-04-22 | 富士通株式会社 | 半導体装置 |
| US5898634A (en) * | 1997-06-17 | 1999-04-27 | Micron Technology, Inc. | Integrated circuit with supply voltage detector |
| US5956289A (en) * | 1997-06-17 | 1999-09-21 | Micron Technology, Inc. | Clock signal from an adjustable oscillator for an integrated circuit |
| US5889721A (en) * | 1997-08-21 | 1999-03-30 | Integrated Silicon Solution, Inc. | Method and apparatus for operating functions relating to memory and/or applications that employ memory in accordance with available power |
| US5940338A (en) * | 1997-08-22 | 1999-08-17 | Micron Technology, Inc. | Memory device with a sense amplifier |
| JPH11250665A (ja) * | 1998-03-04 | 1999-09-17 | Mitsubishi Electric Corp | 半導体集積回路 |
| US6323712B1 (en) | 2000-06-26 | 2001-11-27 | Etron Technology, Inc. | Delay circuit with voltage compensation |
| JP2005129151A (ja) * | 2003-10-23 | 2005-05-19 | Fujitsu Ltd | 半導体記憶装置 |
| EP1630815B1 (fr) * | 2004-08-24 | 2011-10-05 | Infineon Technologies AG | Dispositif de memoire a la flexibilite en relation a la tension d'alimentation et avec un rendement adapte a la tension d'alimentation |
| JP4662437B2 (ja) * | 2004-11-30 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| US7512029B2 (en) * | 2006-06-09 | 2009-03-31 | Micron Technology, Inc. | Method and apparatus for managing behavior of memory devices |
| KR100845776B1 (ko) * | 2006-11-23 | 2008-07-14 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 센스앰프 제어회로 및 방법 |
| KR100889311B1 (ko) * | 2007-02-23 | 2009-03-18 | 주식회사 하이닉스반도체 | 비트라인 감지증폭기를 포함하는 반도체메모리소자 |
| KR101003153B1 (ko) * | 2009-05-15 | 2010-12-21 | 주식회사 하이닉스반도체 | 전압 안정화 회로 및 이를 이용한 반도체 메모리 장치 |
| US9083649B2 (en) * | 2012-07-02 | 2015-07-14 | Cox Communications, Inc. | Systems and methods for managing network bandwidth via content buffering |
| CN114566202B (zh) * | 2022-04-26 | 2022-08-02 | 长鑫存储技术有限公司 | 一种感测放大器的测试方法、装置、存储装置及存储系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0102618A2 (fr) * | 1982-08-31 | 1984-03-14 | Nec Corporation | Circuit de mémoire avec des moyens de détection de tension d'alimentation |
| US4811290A (en) * | 1986-04-01 | 1989-03-07 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50133060A (fr) * | 1974-03-14 | 1975-10-21 | ||
| US4061999A (en) * | 1975-12-29 | 1977-12-06 | Mostek Corporation | Dynamic random access memory system |
| JPS5888895A (ja) * | 1981-11-20 | 1983-05-27 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置 |
| JPS59162690A (ja) * | 1983-03-04 | 1984-09-13 | Nec Corp | 擬似スタテイツクメモリ |
| JPS59227090A (ja) * | 1983-06-06 | 1984-12-20 | Hitachi Ltd | 不揮発性メモリ装置 |
| JPS60198618A (ja) * | 1984-03-21 | 1985-10-08 | Oki Electric Ind Co Ltd | ダイナミツク論理回路 |
| US4656612A (en) * | 1984-11-19 | 1987-04-07 | Inmos Corporation | Dram current control technique |
| JPS61271694A (ja) * | 1985-05-27 | 1986-12-01 | Mitsubishi Electric Corp | メモリ装置 |
| JPS62256296A (ja) * | 1986-04-30 | 1987-11-07 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
| US4881205A (en) * | 1987-04-21 | 1989-11-14 | Casio Computer Co., Ltd. | Compact electronic apparatus with a refresh unit for a dynamic type memory |
| US4831595A (en) * | 1987-05-06 | 1989-05-16 | Hughes Aircraft Company | Low voltage power down logic control circuit |
| JPH07107793B2 (ja) * | 1987-11-10 | 1995-11-15 | 株式会社東芝 | 仮想型スタティック半導体記憶装置及びこの記憶装置を用いたシステム |
| JPH0229989A (ja) * | 1988-07-19 | 1990-01-31 | Mitsubishi Electric Corp | ダイナミックランダムアクセスメモリ装置 |
| US5031150A (en) * | 1988-08-26 | 1991-07-09 | Kabushiki Kaisha Toshiba | Control circuit for a semiconductor memory device and semiconductor memory system |
| US5293338A (en) * | 1990-02-22 | 1994-03-08 | Sharp Kabushiki Kaisha | Peripheral circuit in a dynamic semiconductor memory device enabling a time-saving and energy-saving data readout |
| JP2626160B2 (ja) * | 1990-04-27 | 1997-07-02 | 日本電気株式会社 | 半導体メモリ |
-
1989
- 1989-05-19 JP JP1127114A patent/JP2614514B2/ja not_active Expired - Fee Related
- 1989-11-16 US US07/437,425 patent/US5132932A/en not_active Expired - Lifetime
-
1990
- 1990-02-08 DE DE4003824A patent/DE4003824A1/de active Granted
- 1990-05-03 KR KR1019900006249A patent/KR930010938B1/ko not_active IP Right Cessation
-
1992
- 1992-01-31 US US07/829,144 patent/US5315550A/en not_active Expired - Lifetime
-
1994
- 1994-03-31 US US08/220,649 patent/US5418747A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0102618A2 (fr) * | 1982-08-31 | 1984-03-14 | Nec Corporation | Circuit de mémoire avec des moyens de détection de tension d'alimentation |
| US4811290A (en) * | 1986-04-01 | 1989-03-07 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4224048A1 (de) * | 1992-02-05 | 1993-08-12 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung, die auch bei variabler versorgungsspannung daten korrekt lesen kann |
| DE4429152A1 (de) * | 1993-08-20 | 1995-03-02 | Mitsubishi Electric Corp | Mikrocomputer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930010938B1 (ko) | 1993-11-17 |
| KR900019037A (ko) | 1990-12-22 |
| US5418747A (en) | 1995-05-23 |
| DE4003824C2 (fr) | 1992-07-02 |
| JP2614514B2 (ja) | 1997-05-28 |
| US5315550A (en) | 1994-05-24 |
| JPH02306492A (ja) | 1990-12-19 |
| US5132932A (en) | 1992-07-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |