DE3051063C2 - - Google Patents

Info

Publication number
DE3051063C2
DE3051063C2 DE3051063A DE3051063A DE3051063C2 DE 3051063 C2 DE3051063 C2 DE 3051063C2 DE 3051063 A DE3051063 A DE 3051063A DE 3051063 A DE3051063 A DE 3051063A DE 3051063 C2 DE3051063 C2 DE 3051063C2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
drain
source
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3051063A
Other languages
German (de)
English (en)
Inventor
Richard A. Rochester Mich. Us Flasck
Scott H. Milford Mich. Us Holmberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3051063C2 publication Critical patent/DE3051063C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE3051063A 1979-12-13 1980-12-09 Expired - Fee Related DE3051063C2 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827880A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
DE3051063C2 true DE3051063C2 (enrdf_load_stackoverflow) 1991-04-11

Family

ID=26799985

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3051063A Expired - Fee Related DE3051063C2 (enrdf_load_stackoverflow) 1979-12-13 1980-12-09
DE3046358A Expired DE3046358C2 (de) 1979-12-13 1980-12-09 Feldeffekttransistor in Dünnfilmausbildung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3046358A Expired DE3046358C2 (de) 1979-12-13 1980-12-09 Feldeffekttransistor in Dünnfilmausbildung

Country Status (14)

Country Link
KR (2) KR840001605B1 (enrdf_load_stackoverflow)
AU (2) AU538008B2 (enrdf_load_stackoverflow)
BE (1) BE886630A (enrdf_load_stackoverflow)
CA (3) CA1153480A (enrdf_load_stackoverflow)
DE (2) DE3051063C2 (enrdf_load_stackoverflow)
FR (1) FR2474763B1 (enrdf_load_stackoverflow)
GB (2) GB2067353B (enrdf_load_stackoverflow)
IE (1) IE51076B1 (enrdf_load_stackoverflow)
IL (1) IL61679A (enrdf_load_stackoverflow)
IT (1) IT1193999B (enrdf_load_stackoverflow)
MX (1) MX151189A (enrdf_load_stackoverflow)
NL (2) NL8006770A (enrdf_load_stackoverflow)
SE (1) SE8008738L (enrdf_load_stackoverflow)
SG (1) SG72684G (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5677547A (en) * 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
US5650637A (en) 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
US5365079A (en) * 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
KR100741798B1 (ko) * 2004-12-30 2007-07-25 엘지전자 주식회사 건조기 일체형 세탁기
CN112420821B (zh) * 2020-10-29 2021-11-19 北京元芯碳基集成电路研究院 一种基于碳基材料的y型栅结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2820331A1 (de) * 1978-05-10 1979-11-15 Ernst Prof Dr Ing Lueder Duennschicht-feldeffekt-transistoren
EP0020929A1 (en) * 1979-06-29 1981-01-07 International Business Machines Corporation Improvements relating to field effect transistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3384792A (en) * 1965-06-01 1968-05-21 Electro Optical Systems Inc Stacked electrode field effect triode
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2820331A1 (de) * 1978-05-10 1979-11-15 Ernst Prof Dr Ing Lueder Duennschicht-feldeffekt-transistoren
EP0020929A1 (en) * 1979-06-29 1981-01-07 International Business Machines Corporation Improvements relating to field effect transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Solid State Electronics 1976, pp. 721-729 *
WO 79/00724 *

Also Published As

Publication number Publication date
CA1163377A (en) 1984-03-06
IE51076B1 (en) 1986-10-01
KR830004680A (ko) 1983-07-16
AU6531380A (en) 1981-06-18
SE8008738L (sv) 1981-06-14
DE3046358C2 (de) 1987-02-26
IL61679A0 (en) 1981-01-30
AU2845184A (en) 1984-09-13
KR850000902B1 (ko) 1985-06-26
NL8006770A (nl) 1981-07-16
GB2131605A (en) 1984-06-20
SG72684G (en) 1985-03-29
FR2474763A1 (fr) 1981-07-31
CA1188008A (en) 1985-05-28
IT8026642A0 (it) 1980-12-12
KR850001478A (ko) 1985-02-18
BE886630A (fr) 1981-04-01
IE802615L (en) 1981-06-13
MX151189A (es) 1984-10-09
GB2067353B (en) 1984-07-04
GB2067353A (en) 1981-07-22
FR2474763B1 (fr) 1987-03-20
GB2131605B (en) 1985-02-13
CA1153480A (en) 1983-09-06
DE3046358A1 (de) 1981-09-17
IL61679A (en) 1984-11-30
AU554058B2 (en) 1986-08-07
GB8326775D0 (en) 1983-11-09
AU538008B2 (en) 1984-07-26
KR840001605B1 (ko) 1984-10-11
NL8401928A (nl) 1984-10-01
IT1193999B (it) 1988-08-31

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