Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6728—Vertical TFTs
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
  • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
  • H10D48/30—Devices controlled by electric currents or voltages
  • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H10D48/366—Multistable devices; Devices having two or more distinct operating states
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
  • H10D48/30—Devices controlled by electric currents or voltages
  • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • H10D48/381—Multistable devices; Devices having two or more distinct operating states
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/40—Crystalline structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
  • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D88/00—Three-dimensional [3D] integrated devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Thin Film Transistor (AREA)
• Bipolar Transistors (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=26799985

Family Applications (1)

Country Status (14)

Families Citing this family (18)

Family Cites Families (5)

• 1980
  • 1980-12-09 DE DE3051063A patent/DE3051063C2/de not_active Expired - Fee Related
  • 1980-12-09 DE DE3046358A patent/DE3046358C2/de not_active Expired
  • 1980-12-09 IL IL61679A patent/IL61679A/xx unknown
  • 1980-12-10 GB GB8039608A patent/GB2067353B/en not_active Expired
  • 1980-12-11 MX MX185169A patent/MX151189A/es unknown
  • 1980-12-12 NL NL8006770A patent/NL8006770A/nl not_active Application Discontinuation
  • 1980-12-12 BE BE0/203147A patent/BE886630A/fr not_active IP Right Cessation
  • 1980-12-12 IE IE2615/80A patent/IE51076B1/en unknown
  • 1980-12-12 KR KR1019800004728A patent/KR840001605B1/ko not_active Expired
  • 1980-12-12 AU AU65313/80A patent/AU538008B2/en not_active Ceased
  • 1980-12-12 FR FR8026402A patent/FR2474763B1/fr not_active Expired
  • 1980-12-12 CA CA000366712A patent/CA1153480A/en not_active Expired
  • 1980-12-12 SE SE8008738A patent/SE8008738L/ unknown
  • 1980-12-12 IT IT26642/80A patent/IT1193999B/it active
• 1983
  • 1983-05-20 CA CA000428672A patent/CA1163377A/en not_active Expired
  • 1983-10-06 GB GB08326775A patent/GB2131605B/en not_active Expired
• 1984
  • 1984-05-21 AU AU28451/84A patent/AU554058B2/en not_active Ceased
  • 1984-06-18 NL NL8401928A patent/NL8401928A/nl not_active Application Discontinuation
  • 1984-07-14 KR KR1019840004146A patent/KR850000902B1/ko not_active Expired
  • 1984-08-01 CA CA000460196A patent/CA1188008A/en not_active Expired
  • 1984-10-17 SG SG726/84A patent/SG72684G/en unknown

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