IT1174449B - Transistore a sottile pellicola amorfa - Google Patents
Transistore a sottile pellicola amorfaInfo
- Publication number
- IT1174449B IT1174449B IT27921/78A IT2792178A IT1174449B IT 1174449 B IT1174449 B IT 1174449B IT 27921/78 A IT27921/78 A IT 27921/78A IT 2792178 A IT2792178 A IT 2792178A IT 1174449 B IT1174449 B IT 1174449B
- Authority
- IT
- Italy
- Prior art keywords
- film transistor
- amorphous film
- thin amorphous
- thin
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/836,874 US4127861A (en) | 1977-09-26 | 1977-09-26 | Metal base transistor with thin film amorphous semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7827921A0 IT7827921A0 (it) | 1978-09-21 |
| IT1174449B true IT1174449B (it) | 1987-07-01 |
Family
ID=25272944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT27921/78A IT1174449B (it) | 1977-09-26 | 1978-09-21 | Transistore a sottile pellicola amorfa |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4127861A (it) |
| EP (1) | EP0001374B1 (it) |
| JP (1) | JPS5451782A (it) |
| CA (1) | CA1089109A (it) |
| DE (1) | DE2861135D1 (it) |
| IT (1) | IT1174449B (it) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
| US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| CA1153825A (en) * | 1980-02-04 | 1983-09-13 | International Business Machines Corporation | Semiconductor device |
| DE3113041A1 (de) * | 1980-04-01 | 1982-01-28 | Canon K.K., Tokyo | Verfahren und vorrichtung zur anzeige von informationen |
| US4492971A (en) * | 1980-06-05 | 1985-01-08 | At&T Bell Laboratories | Metal silicide-silicon heterostructures |
| US4586074A (en) * | 1983-09-15 | 1986-04-29 | Rockwell International Corporation | Impurity band conduction semiconductor devices |
| US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
| JPS60206073A (ja) | 1984-03-30 | 1985-10-17 | Hitachi Ltd | 薄膜トランジスタ |
| NL8403005A (nl) * | 1984-10-02 | 1986-05-01 | Imec Interuniversitair Micro E | Werkwijze voor het vervaardigen van een bipolaire heterojunctietransistor en bipolaire heterojunctie-transistor vervaardigd volgens de werkwijze. |
| NL8501769A (nl) * | 1984-10-02 | 1986-05-01 | Imec Interuniversitair Micro E | Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan. |
| JPS62224969A (ja) * | 1986-03-27 | 1987-10-02 | Agency Of Ind Science & Technol | 半導体装置 |
| JPH04335538A (ja) * | 1991-05-10 | 1992-11-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| WO1996007208A1 (en) * | 1994-08-31 | 1996-03-07 | Douwe Johannes Monsma | Current conducting structure with at least one potential barrier and method of manufcturing such |
| JP5182775B2 (ja) * | 2006-03-22 | 2013-04-17 | 国立大学法人大阪大学 | トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ |
| WO2009077935A1 (en) * | 2007-12-14 | 2009-06-25 | Philips Intellectual Property & Standards Gmbh | Organic light-emitting device with adjustable charge carrier injection |
| JP6107707B2 (ja) | 2014-03-04 | 2017-04-05 | 株式会社村田製作所 | 搬送装置 |
| DE102015117448A1 (de) * | 2015-09-02 | 2017-03-02 | Von Ardenne Gmbh | Verfahren und Prozessieranordnung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1439688A1 (de) * | 1964-05-30 | 1968-12-19 | Telefunken Patent | Metallbasistransistor |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
-
1977
- 1977-09-26 US US05/836,874 patent/US4127861A/en not_active Expired - Lifetime
-
1978
- 1978-06-27 CA CA306,282A patent/CA1089109A/en not_active Expired
- 1978-08-25 DE DE7878430011T patent/DE2861135D1/de not_active Expired
- 1978-08-25 EP EP78430011A patent/EP0001374B1/fr not_active Expired
- 1978-08-25 JP JP10296578A patent/JPS5451782A/ja active Granted
- 1978-09-21 IT IT27921/78A patent/IT1174449B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT7827921A0 (it) | 1978-09-21 |
| DE2861135D1 (en) | 1981-12-17 |
| EP0001374A1 (fr) | 1979-04-04 |
| JPS5451782A (en) | 1979-04-23 |
| US4127861A (en) | 1978-11-28 |
| EP0001374B1 (fr) | 1981-10-07 |
| JPS5712304B2 (it) | 1982-03-10 |
| CA1089109A (en) | 1980-11-04 |
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