IE51076B1 - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- IE51076B1 IE51076B1 IE2615/80A IE261580A IE51076B1 IE 51076 B1 IE51076 B1 IE 51076B1 IE 2615/80 A IE2615/80 A IE 2615/80A IE 261580 A IE261580 A IE 261580A IE 51076 B1 IE51076 B1 IE 51076B1
- Authority
- IE
- Ireland
- Prior art keywords
- thin film
- field effect
- effect transistor
- transistor according
- layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 57
- 230000005669 field effect Effects 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000012212 insulator Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 238000010276 construction Methods 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 11
- 239000011737 fluorine Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 47
- 239000000956 alloy Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000011810 insulating material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical group 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 1
- 229920000307 polymer substrate Polymers 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000004020 conductor Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 19
- 239000010408 film Substances 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 12
- 229910000077 silane Inorganic materials 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 101150068246 V-MOS gene Proteins 0.000 description 5
- 239000002178 crystalline material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000878 H alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000347389 Serranus cabrilla Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 alumi 51076 num Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/366—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE895/85A IE51077B1 (en) | 1979-12-13 | 1980-12-12 | Thin film transistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10301179A | 1979-12-13 | 1979-12-13 | |
| US20827880A | 1980-11-19 | 1980-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE802615L IE802615L (en) | 1981-06-13 |
| IE51076B1 true IE51076B1 (en) | 1986-10-01 |
Family
ID=26799985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE2615/80A IE51076B1 (en) | 1979-12-13 | 1980-12-12 | Thin film transistor |
Country Status (14)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US5677547A (en) * | 1982-04-30 | 1997-10-14 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US5650637A (en) | 1982-04-30 | 1997-07-22 | Seiko Epson Corporation | Active matrix assembly |
| US5365079A (en) * | 1982-04-30 | 1994-11-15 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
| US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
| US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
| US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| US4668968A (en) * | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| KR100741798B1 (ko) * | 2004-12-30 | 2007-07-25 | 엘지전자 주식회사 | 건조기 일체형 세탁기 |
| CN112420821B (zh) * | 2020-10-29 | 2021-11-19 | 北京元芯碳基集成电路研究院 | 一种基于碳基材料的y型栅结构及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384792A (en) * | 1965-06-01 | 1968-05-21 | Electro Optical Systems Inc | Stacked electrode field effect triode |
| US4115799A (en) * | 1977-01-26 | 1978-09-19 | Westinghouse Electric Corp. | Thin film copper transition between aluminum and indium copper films |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| DE2820331C3 (de) * | 1978-05-10 | 1982-03-18 | Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart | Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung |
| GB2052853A (en) * | 1979-06-29 | 1981-01-28 | Ibm | Vertical fet on an insulating substrate |
-
1980
- 1980-12-09 DE DE3051063A patent/DE3051063C2/de not_active Expired - Fee Related
- 1980-12-09 DE DE3046358A patent/DE3046358C2/de not_active Expired
- 1980-12-09 IL IL61679A patent/IL61679A/xx unknown
- 1980-12-10 GB GB8039608A patent/GB2067353B/en not_active Expired
- 1980-12-11 MX MX185169A patent/MX151189A/es unknown
- 1980-12-12 NL NL8006770A patent/NL8006770A/nl not_active Application Discontinuation
- 1980-12-12 BE BE0/203147A patent/BE886630A/fr not_active IP Right Cessation
- 1980-12-12 IE IE2615/80A patent/IE51076B1/en unknown
- 1980-12-12 KR KR1019800004728A patent/KR840001605B1/ko not_active Expired
- 1980-12-12 AU AU65313/80A patent/AU538008B2/en not_active Ceased
- 1980-12-12 FR FR8026402A patent/FR2474763B1/fr not_active Expired
- 1980-12-12 CA CA000366712A patent/CA1153480A/en not_active Expired
- 1980-12-12 SE SE8008738A patent/SE8008738L/ unknown
- 1980-12-12 IT IT26642/80A patent/IT1193999B/it active
-
1983
- 1983-05-20 CA CA000428672A patent/CA1163377A/en not_active Expired
- 1983-10-06 GB GB08326775A patent/GB2131605B/en not_active Expired
-
1984
- 1984-05-21 AU AU28451/84A patent/AU554058B2/en not_active Ceased
- 1984-06-18 NL NL8401928A patent/NL8401928A/nl not_active Application Discontinuation
- 1984-07-14 KR KR1019840004146A patent/KR850000902B1/ko not_active Expired
- 1984-08-01 CA CA000460196A patent/CA1188008A/en not_active Expired
- 1984-10-17 SG SG726/84A patent/SG72684G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE3051063C2 (enrdf_load_stackoverflow) | 1991-04-11 |
| CA1163377A (en) | 1984-03-06 |
| KR830004680A (ko) | 1983-07-16 |
| AU6531380A (en) | 1981-06-18 |
| SE8008738L (sv) | 1981-06-14 |
| DE3046358C2 (de) | 1987-02-26 |
| IL61679A0 (en) | 1981-01-30 |
| AU2845184A (en) | 1984-09-13 |
| KR850000902B1 (ko) | 1985-06-26 |
| NL8006770A (nl) | 1981-07-16 |
| GB2131605A (en) | 1984-06-20 |
| SG72684G (en) | 1985-03-29 |
| FR2474763A1 (fr) | 1981-07-31 |
| CA1188008A (en) | 1985-05-28 |
| IT8026642A0 (it) | 1980-12-12 |
| KR850001478A (ko) | 1985-02-18 |
| BE886630A (fr) | 1981-04-01 |
| IE802615L (en) | 1981-06-13 |
| MX151189A (es) | 1984-10-09 |
| GB2067353B (en) | 1984-07-04 |
| GB2067353A (en) | 1981-07-22 |
| FR2474763B1 (fr) | 1987-03-20 |
| GB2131605B (en) | 1985-02-13 |
| CA1153480A (en) | 1983-09-06 |
| DE3046358A1 (de) | 1981-09-17 |
| IL61679A (en) | 1984-11-30 |
| AU554058B2 (en) | 1986-08-07 |
| GB8326775D0 (en) | 1983-11-09 |
| AU538008B2 (en) | 1984-07-26 |
| KR840001605B1 (ko) | 1984-10-11 |
| NL8401928A (nl) | 1984-10-01 |
| IT1193999B (it) | 1988-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1155239A (en) | Diode and rom or eeprom device using same | |
| CA1153480A (en) | Thin film transistor | |
| JP2500047B2 (ja) | 電界効果トランジスタ | |
| US5144409A (en) | Isotopically enriched semiconductor devices | |
| US5442191A (en) | Isotopically enriched semiconductor devices | |
| US5889292A (en) | Semiconductor device having an improved thin film transistor | |
| EP0271247A2 (en) | A MOS field effect transistor and a process for fabricating the same | |
| US5591653A (en) | Method of manufacturing Si-Ge thin film transistor | |
| GB2147316A (en) | A method of making p-doped silicon films and devices made therefrom | |
| KR930002594B1 (ko) | 반도체장치의 제조방법 | |
| US5923070A (en) | Semiconductor device having an element inclusion region for reducing stress caused by lattice mismatch | |
| WO2000004575A2 (en) | Collimated sputtering of semiconductor and other films | |
| US5099296A (en) | Thin film transistor | |
| CN117199136A (zh) | 一种集成异质结二极管的SiC MOSFET及制备方法 | |
| US4677738A (en) | Method of making a photovoltaic panel | |
| JPWO2004112150A1 (ja) | 電界効果トランジスタ | |
| IE51077B1 (en) | Thin film transistor | |
| JPS61220369A (ja) | 薄膜電界効果素子 | |
| US20070096107A1 (en) | Semiconductor devices with dielectric layers and methods of fabricating same | |
| US4569118A (en) | Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same | |
| JP3325664B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
| CN117476763B (zh) | 一种具有低漏电的e-hemt及制备方法 | |
| JP2840797B2 (ja) | 半導体装置の作製方法 | |
| CN1263158C (zh) | 栅极结构及其制造方法及具此栅极结构的mos元件 | |
| JPH036856A (ja) | 絶縁ゲート型半導体装置及びその形成方法 |