BE886630A - Transistor a film mince - Google Patents
Transistor a film minceInfo
- Publication number
- BE886630A BE886630A BE0/203147A BE203147A BE886630A BE 886630 A BE886630 A BE 886630A BE 0/203147 A BE0/203147 A BE 0/203147A BE 203147 A BE203147 A BE 203147A BE 886630 A BE886630 A BE 886630A
- Authority
- BE
- Belgium
- Prior art keywords
- thin film
- film transistor
- transistor
- thin
- film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/366—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10301179A | 1979-12-13 | 1979-12-13 | |
| US20827880A | 1980-11-19 | 1980-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE886630A true BE886630A (fr) | 1981-04-01 |
Family
ID=26799985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/203147A BE886630A (fr) | 1979-12-13 | 1980-12-12 | Transistor a film mince |
Country Status (14)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US5677547A (en) * | 1982-04-30 | 1997-10-14 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US5650637A (en) | 1982-04-30 | 1997-07-22 | Seiko Epson Corporation | Active matrix assembly |
| US5365079A (en) * | 1982-04-30 | 1994-11-15 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
| US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
| US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
| US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| US4668968A (en) * | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| KR100741798B1 (ko) * | 2004-12-30 | 2007-07-25 | 엘지전자 주식회사 | 건조기 일체형 세탁기 |
| CN112420821B (zh) * | 2020-10-29 | 2021-11-19 | 北京元芯碳基集成电路研究院 | 一种基于碳基材料的y型栅结构及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384792A (en) * | 1965-06-01 | 1968-05-21 | Electro Optical Systems Inc | Stacked electrode field effect triode |
| US4115799A (en) * | 1977-01-26 | 1978-09-19 | Westinghouse Electric Corp. | Thin film copper transition between aluminum and indium copper films |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| DE2820331C3 (de) * | 1978-05-10 | 1982-03-18 | Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart | Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung |
| GB2052853A (en) * | 1979-06-29 | 1981-01-28 | Ibm | Vertical fet on an insulating substrate |
-
1980
- 1980-12-09 DE DE3051063A patent/DE3051063C2/de not_active Expired - Fee Related
- 1980-12-09 DE DE3046358A patent/DE3046358C2/de not_active Expired
- 1980-12-09 IL IL61679A patent/IL61679A/xx unknown
- 1980-12-10 GB GB8039608A patent/GB2067353B/en not_active Expired
- 1980-12-11 MX MX185169A patent/MX151189A/es unknown
- 1980-12-12 NL NL8006770A patent/NL8006770A/nl not_active Application Discontinuation
- 1980-12-12 BE BE0/203147A patent/BE886630A/fr not_active IP Right Cessation
- 1980-12-12 IE IE2615/80A patent/IE51076B1/en unknown
- 1980-12-12 KR KR1019800004728A patent/KR840001605B1/ko not_active Expired
- 1980-12-12 AU AU65313/80A patent/AU538008B2/en not_active Ceased
- 1980-12-12 FR FR8026402A patent/FR2474763B1/fr not_active Expired
- 1980-12-12 CA CA000366712A patent/CA1153480A/en not_active Expired
- 1980-12-12 SE SE8008738A patent/SE8008738L/ unknown
- 1980-12-12 IT IT26642/80A patent/IT1193999B/it active
-
1983
- 1983-05-20 CA CA000428672A patent/CA1163377A/en not_active Expired
- 1983-10-06 GB GB08326775A patent/GB2131605B/en not_active Expired
-
1984
- 1984-05-21 AU AU28451/84A patent/AU554058B2/en not_active Ceased
- 1984-06-18 NL NL8401928A patent/NL8401928A/nl not_active Application Discontinuation
- 1984-07-14 KR KR1019840004146A patent/KR850000902B1/ko not_active Expired
- 1984-08-01 CA CA000460196A patent/CA1188008A/en not_active Expired
- 1984-10-17 SG SG726/84A patent/SG72684G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE3051063C2 (enrdf_load_stackoverflow) | 1991-04-11 |
| CA1163377A (en) | 1984-03-06 |
| IE51076B1 (en) | 1986-10-01 |
| KR830004680A (ko) | 1983-07-16 |
| AU6531380A (en) | 1981-06-18 |
| SE8008738L (sv) | 1981-06-14 |
| DE3046358C2 (de) | 1987-02-26 |
| IL61679A0 (en) | 1981-01-30 |
| AU2845184A (en) | 1984-09-13 |
| KR850000902B1 (ko) | 1985-06-26 |
| NL8006770A (nl) | 1981-07-16 |
| GB2131605A (en) | 1984-06-20 |
| SG72684G (en) | 1985-03-29 |
| FR2474763A1 (fr) | 1981-07-31 |
| CA1188008A (en) | 1985-05-28 |
| IT8026642A0 (it) | 1980-12-12 |
| KR850001478A (ko) | 1985-02-18 |
| IE802615L (en) | 1981-06-13 |
| MX151189A (es) | 1984-10-09 |
| GB2067353B (en) | 1984-07-04 |
| GB2067353A (en) | 1981-07-22 |
| FR2474763B1 (fr) | 1987-03-20 |
| GB2131605B (en) | 1985-02-13 |
| CA1153480A (en) | 1983-09-06 |
| DE3046358A1 (de) | 1981-09-17 |
| IL61679A (en) | 1984-11-30 |
| AU554058B2 (en) | 1986-08-07 |
| GB8326775D0 (en) | 1983-11-09 |
| AU538008B2 (en) | 1984-07-26 |
| KR840001605B1 (ko) | 1984-10-11 |
| NL8401928A (nl) | 1984-10-01 |
| IT1193999B (it) | 1988-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: ENERGY CONVERSION DEVICES INC. Effective date: 19881231 |