DE2434208A1 - Derivat der 2-azetidinsulfensaeure und verfahren zu seiner herstellung - Google Patents
Derivat der 2-azetidinsulfensaeure und verfahren zu seiner herstellungInfo
- Publication number
- DE2434208A1 DE2434208A1 DE2434208A DE2434208A DE2434208A1 DE 2434208 A1 DE2434208 A1 DE 2434208A1 DE 2434208 A DE2434208 A DE 2434208A DE 2434208 A DE2434208 A DE 2434208A DE 2434208 A1 DE2434208 A1 DE 2434208A1
- Authority
- DE
- Germany
- Prior art keywords
- acid
- phthalimido
- mixture
- nitrobenzyl
- sulfoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 15
- 239000002253 acid Substances 0.000 title description 13
- 238000004519 manufacturing process Methods 0.000 title description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- 239000011541 reaction mixture Substances 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000012442 inert solvent Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- BRADTAJXVOECJE-UHFFFAOYSA-N 2-hydroxysulfanylazetidine Chemical compound OSC1CCN1 BRADTAJXVOECJE-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- WPHGSKGZRAQSGP-UHFFFAOYSA-N methylenecyclohexane Natural products C1CCCC2CC21 WPHGSKGZRAQSGP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001953 recrystallisation Methods 0.000 claims description 3
- RVEZZJVBDQCTEF-UHFFFAOYSA-N sulfenic acid Chemical compound SO RVEZZJVBDQCTEF-UHFFFAOYSA-N 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 10
- -1 penicillin sulfoxide ester Chemical class 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 150000003462 sulfoxides Chemical class 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- FCZNNHHXCFARDY-WQRUCBPWSA-N (2s,5r,6r)-3,3-dimethyl-4,7-dioxo-6-[(2-phenylacetyl)amino]-4$l^{4}-thia-1-azabicyclo[3.2.0]heptane-2-carboxylic acid Chemical class N([C@H]1[C@@H]2N(C1=O)[C@H](C(S2=O)(C)C)C(O)=O)C(=O)CC1=CC=CC=C1 FCZNNHHXCFARDY-WQRUCBPWSA-N 0.000 description 6
- 229930186147 Cephalosporin Natural products 0.000 description 6
- 229940124587 cephalosporin Drugs 0.000 description 6
- 150000001780 cephalosporins Chemical class 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- GVTLFGJNTIRUEG-ZHACJKMWSA-N (e)-n-(3-methoxyphenyl)-3-phenylprop-2-enamide Chemical group COC1=CC=CC(NC(=O)\C=C\C=2C=CC=CC=2)=C1 GVTLFGJNTIRUEG-ZHACJKMWSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000006798 ring closing metathesis reaction Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000003242 anti bacterial agent Substances 0.000 description 3
- 230000003115 biocidal effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 125000006503 p-nitrobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1[N+]([O-])=O)C([H])([H])* 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- PYEJPVLWBLJEPJ-JOPIAHFSSA-N (6r)-7-(1,3-dioxoisoindol-2-yl)-3-methyl-8-oxo-5-thia-1-azabicyclo[4.2.0]oct-2-ene-2-carboxylic acid Chemical compound O=C1C2=CC=CC=C2C(=O)N1C(C1=O)[C@@H]2N1C(C(O)=O)=C(C)CS2 PYEJPVLWBLJEPJ-JOPIAHFSSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000012024 dehydrating agents Substances 0.000 description 2
- NNQIJOYQWYKBOW-UHFFFAOYSA-N desacetoxycephalosphorin G Natural products S1CC(C)=C(C(O)=O)N2C(=O)C(NC(=O)CCCC(N)C(O)=O)C12 NNQIJOYQWYKBOW-UHFFFAOYSA-N 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000006049 ring expansion reaction Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003860 tertiary carboxamides Chemical class 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- HFKSUKBBJGVEFC-CWZMJNCASA-N CC(C(CC1=CC=CC=C1)S[C@@H]1C2N(C(C(C3=C4)=CC=C4[N+]([O-])=O)=O)C3=O)=C(C(O)=O)N1C2=O Chemical compound CC(C(CC1=CC=CC=C1)S[C@@H]1C2N(C(C(C3=C4)=CC=C4[N+]([O-])=O)=O)C3=O)=C(C(O)=O)N1C2=O HFKSUKBBJGVEFC-CWZMJNCASA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000035473 Communicable disease Diseases 0.000 description 1
- 229930182555 Penicillin Natural products 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000010933 acylation Effects 0.000 description 1
- 238000005917 acylation reaction Methods 0.000 description 1
- 238000005904 alkaline hydrolysis reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229940088710 antibiotic agent Drugs 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229950005228 bromoform Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- ZAIPMKNFIOOWCQ-UEKVPHQBSA-N cephalexin Chemical group C1([C@@H](N)C(=O)N[C@H]2[C@@H]3N(C2=O)C(=C(CS3)C)C(O)=O)=CC=CC=C1 ZAIPMKNFIOOWCQ-UEKVPHQBSA-N 0.000 description 1
- 229940106164 cephalexin Drugs 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000007257 deesterification reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010575 fractional recrystallization Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002960 penicillins Chemical class 0.000 description 1
- 125000005544 phthalimido group Chemical group 0.000 description 1
- 238000012746 preparative thin layer chromatography Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229940124597 therapeutic agent Drugs 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
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- H01L2224/732—Location after the connecting process
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Description
DR. I. MAAS
DR. G. SPOTT
8000 MÜNCHEN 40
TEL· 3592201/205
X-3983
Derivat der 2-Azetidinsulfensäure und Verfahren
zu seiner Herstellung
Gegenstand der Erfindung ist die 3R-Phthalimido-1-(1'S-p-nitrobenzyloxycarbonyl-2'-methylprop-2'-enyl)-4-oxo-2-azetidinsulfensäure.
Gleichfalls Gegenstand der Erfindung ist ein Verfahren zur Herstellung der 3R-Phthalimido-1-(1·S-p-nitrobenzyloxycarbonyl-2'-methylprop-2'-enyl)-4-oxo-2-azetidinsulfensäure
durch Erwärmen von p-Nitrobenzyl-6-phthalimido-2,2-dimethylpenam-l-oxid-3-carboxylat
in einem inerten Lösungsmittel bei einer Temperatur.von etwa 60 bis 1500C
während etwa 5 bis 60 Minuten.
In neuerer Zeit haben die Cephalosporinantibiotika beträchtliche Bedeutung als therapeutische Mittel zur Behandlung
von Infektionskrankheiten des Menschen erlangt. Sie können beispielsweise durch chemische Umwandlung von Penicillinen
509807/1127
hergestellt werden. So wird in der US-PS 3 275 626 ein Verfahren zur Umwandlung eines Penicillinsulfoxidesters
in einen Desacetoxycephalosporinester beschrieben. Dieses Verfahren wurde später verbessert, beispielsweise
durch die Verwendung bestimmter tertiärer Carboxamide. als Lösungsmittel (GB-PS 1 204 972) oder
bestimmter tertiärer Sulfonamide als Lösungsmittel (GB-PS 1 204 394), die die Wärmeumlagerung des Penicillinsulf
oxidesters in stärker spezifischem Ausmaß in Richtung der Bildung der entsprechenden Desacetoxycephalosporinester
lenken und die Anwendung niedrigerer Temperaturen ermöglichen. Eine Verbesserung des Verfahrens nach GB-PS 1 204
972 wurde dadurch erzielt, daß gefunden wurde (US-PS 3 585), daß die Umwandlung eines Penicillinsulfoxidesters
in einen Desacetoxycephalosporinester durch Erwärmen unter sauren Bedingungen in Gegenwart eines tertiären Carboxamids
als Lösungsmittel bessere Ergebnisse liefert, wenn sie in Gegenwart einer Sulfonsäure und eines Mittels zur Entfernung
oder Inaktivierung von in der Reaktionsmischung anwesendem Wasser durchgeführt wird.
Der Mechanismus,auf den in der US-PS 3 275 626 für die
Umwandlung ces Penicillinsulfoxidesters in einen Desacetoxycephalosporinester
geschlossen wird,verläuft über die Bildung
einer Sulfensäure unter Spaltung der S-C2-Bindung^
Dieser Mechanismus ist nun endgültig bewiesen und ausserdem ist festgestellt worden (R. Di G. Cooper, J.A.C.S.,
92, (1970). S. 5010-5011), daß sich unter den Reaktionsbedingungen ein thermisches Gleichgewicht zwischen dem
SuIfoxidausgangsmaterial und der als Zwischenprodukt auftretenden
Sulfensäure ausbildet.
5.09807/ 1 1 27
Von der Sulfensäure wird angenommen, daß sie ein
veränderliches und instabiles Zwischenprodukt ist. Nach der Bildung aus dem Penicillinsulfoxidausgangs^
material wandelt sie sich wieder in das ursprüngliche Penicillinsulfoxid.um oder geht in das gewünschte
Desacetoxycephalosporin über. Sie ist niemals als solche aus dem bei der Ringerweiterung erhaltenen Reaktionsgemisch
isoliert worden und es wurde auch kein Weg gefunden, der zu ihrer Isolierung führen könnte. Deshalb wurde angenommen,
daß es sich dabei lediglich um ein sich veränderndes und instabiles Reakt ions Zwischenprodukt handelt..
Es wurde nun gefunden, daß es möglich ist, das Sulfensäurezwischenprodukt
während der Ringerweiterung des Penicillinsulfoxids durch Umwandlung der Sulfensäure in ihren entsprechenden
Silylester abzutrennen. Dies wird durch Erwärmen des Penicillinsulfoxids in Gegenwart eines Silylier.
rungsmittels erreicht, das mit dem Sulfensäurezwischenprodukt unter Bildung eines stabilen Silylesterazetidin^-2-sulfenats
reagiert. Nach Behandlung mit Säure wird der stabile Silylester einem Ringschluß zu der gewünschten
Desacetoxycephalosporinverbindung unterworfen.
Es wurde nun gefunden, daß eine Sulfensäure wie 3R-Phthalimido-1-(1'S-p-nitrobenzyloxycarbonyl-2'
-methylprop-2'-enyl)-4-oxo-2-azetidinsulfensäure der folgenden Formel
Formel I
509807/1 127
unverändert isoliert werden kann.
Die Verbindung der Formel I wird aus dem entsprechenden p-Nitrobenzylester von 6-Phthalimidopenicillinsulfoxid
(p-Nitrobenzyl-6-phthalimido-2,2-dimethylpenam-3-carboxylat-l-oxid)
hergestellt. Der p-Nitrobenzylester wird in einem inerten Lösungsmittel auf eine Temperatur von etwa 60 bis 15O°C erwärmt, bis die
Spaltung der S-C^-Bindung eingetreten ist- Es nimmt im allgemeinen etwa 5 bis 60 Minuten in Anspruch , wobei
die Reaktionsdauer von der jeweils angewandten Temperatur abhängt. Durch Erhöhung der Reaktionstemperatur wird im
allgemeinen die benötigte Reaktionszeit vermindert. Vorzugsweise beträgt die Reaktionszeit etwa 10 bis 20 Minuten.
Das durch Erwärmen des p-Nitrobenzyl-6-phthalimidopenicillinsulfoxids
gebildete freie SuIfensäurezwxschenprodukt läßt sich, wie gefunden wurde, aus dem Reaktionsgemisch leicht
isolieren, wenn die Gewinnung vorgenommen wird, ehe das Produkt mit einem sauren Medium in Berührung kommt, das
den Ringschluß der Sulfensäure entweder zurück zu dem Penicillinsulf oxid oder zum Desacetloxycephalosporxn
bewirkt.
Beliebige inerte Lösungsmittel können verwendet werden. Geeignete Lösungsmittel sind solche mit einem Siedepunkt,
der wenigstens so hoch wie die Reaktionstemperatur liegt, u.a. aromatische Kohlenwasserstoffe wie Benzol und Toluol,
halogenierte Kohlenwasserstoffe wie Tetrachlorkohlenstoff, Chlorbenzol, Bromoform, Brombenzol, 1,2-Dichloräthan und
1,2-Dibromäthan, Ester wie Äthylacetat und Butylacetat, Ketone wie Methyläthylketon. Bevorzugte Lösungsmittel
sind solche mit einem Siedepunkt in dem Temperaturbereich,
509807/1127
in dem die Reaktion durchgeführt werden soll, da es dann möglich ist, das Reaktionsgemisch unter Rückfluß
zu erwärmen und die eingestellte Temperatur aufrechtzuerhalten.
Nach der Wärmebehandlung des p-Nitrobenzyl-6-phthalimidO"
penicillinsulfoxids zur Erzielung der Spaltung der S-C^"
Bindung enthält das erhaltene Reaktionsgemisch im allgemeinen eine Mischung der gebildeten Sulfensäure und des
als Ausgangsmaterial verwendeten Sulfoxids. Die Isolierung der Sulfensäure kann nach an sich bekannten Arbeitsweisen
erfolgen, vorzugsweise durch fraktioniertes Umkristallisieren. Beispielsweise kann die gebildete Sulfensäure
aus dem nicht umgesetztes SuIfoxid enthaltenden Reaktionsgemisch durch Verdampfen des Lösungsmittels,Umkristallisieren
des Rückstands aus einer Mischung von Äthylacetat mit Äthyläther zur Abtrennung des größten Teils des nichts
umgesetzten Sulfoxids,Eindampfen des beim Umkristallisieren
erhaltenen Filtrats zur Trockne und Umkristallisieren
des Rückstands aus einer Mischung aus Methylen-Chlorid und Cyclohexan isoliert werden. Auf diese Weise
wird reine Sulfensäure erhalten.
Wie bereits erwähnt, erfährt die Sulfensäure einen Ringschluß, wenn sie einem sauren Medium ausgesetzt wird.
Das Produkt dieses Ringschlusses ist der p-Nitrobenzyl— ester der 7-Phthalimido-3-methyl-3-cephem-4-carbonsäure
und fällt je nach den angewandten Bedingungen in größeren oder geringeren Mengen an. Jede beliebige der in US—PS
3 275 626 genannten Säuren kann verwendet werden. Vorzugsweise wird eine SuIfonsäure verwendet, und insbesondere
Methansulfonsäure.
509807/1127
Das so erzeugte p-Nitrobenzyl^-phthalimido^-methyl-3-cephem-4-carboxylat
läßt sich ohne weiteres in ein antibiotisch wirksames Cephalosporin überführen.
Entsprechend einem vor kurzem gefundenen Verfahren kann
die Phthalimidofunktion durch Maßnahmen entfernt werden, die eine alkalische Hydrolyse einschließen, wodurch Teilspaltung
zur Phthalaminsäureseitenkette erfolgt. Dies kann nach einer Methode bewirkt werden, wie sie von
Sheehan et al., Journal of the American Chemical Society, 73, (1951) , S. 4367-4372 beschrieben ist.
Das gebildete Phthalaminsäurederivat wird dann zu der
entsprechenden Phthalisoimidverbindung dehydratisiert.
Die Phthalisoimidstruktur kann durch Behandlung der Phthalaminsäure mit einem Dehydratisierungsmittel, beispielsweise
Ν,Ν1-Dicyclohexylcarbodiimid, erhalten werden. Die
Dehydratisierung wird durch Behandeln der Phthalaminsäure mit einer äquivalenten Menge des Dehydratxsierungsmittels
in einem inerten Medium bei einer Temperatur von etwa O bis 30 C während etwa 15 Minuten bis 2 Stunden bewirkt.
Das erhaltene Phthalisoimid wird durch Umsetzung mit
Hydrazin zu dem freien 7-Aminodesacetoxycephalosporin gespalten. Die Reaktion wird unter Verwendung äquivalenter
Mengen des Phthalisoimids und von Hydrazin durchgeführt. Die Umsetzung erfolgt in einem inerten organischen
Lösungsmittel bei einer Temperatur von etwa -76°C bis etwa Zimmentemperatur während etwa 1 bis 10 Minuten. Dadurch
bildet sich ein Komplex, der durch Erwärmen des Reaktionsgemisches auf eine Temperatur von etwa 50 bis
100°C oder durch Zugabe einer Säure zu dem Reaktionsgemisch zersetzt wird. Bei Anwendung von Wärme wird das
freie 7-Aminocephalosporin als solches gewonnen und bei Anwendung von Säure wird das 7-Aminocephalosporin.in
Form seines entsprechenden Säureadditionssalzes gewonnen.
509807/1127
In das 7-Aminocephalosporin können durch an sich bekannte
Acylierungsmethoden beliebige der verschiedenen in diesem Zusammenhang bekannten Seitenketten eingeführt
werden, wodurch man ein Cephalosporin mit einer bestimmten 7-Acylamidofunktion, beispielsweise Phenylglycylamido,
erhält. Aus dem so acylierten Cephalosporin wird ein antibiotisch wirksames Cephalosporin durch Abspaltung
der p-Nitrobenzylgruppe an der Carboxylgruppe in 4-Stellung des Cephalosporins erhalten. Die Esterspaltung
kann nach an sich bekannten Arbeitsweisen erfolgen, beispielsweise durch Behandlung des p-Nitrobenzylesters
mit einer Säure wie Trifluoressigsäure oder Salzsäure oder mit Zink und Säure, wie Ameisensäure, Essigsäure oder Salzsäure. Sie kann auch durch Hydrieren des
Esters in Gegenwart von Palladium, Rhodium oder einer Verbindung dieser Elemente in Suspension oder auf einem
Träger, wie Bariumsulfat, Kohle oder Aluminiumoxid, erzielt werden.
Ein spezielles Antibiotikum, das nach der oben beschriebenen Arbeitsweise zugänglich ist, ist Cephalexin, d.h.
7-Phenylglycylamido-3-methyl-3-cephem-4-carbonsäure.
Durch die folgenden Beispiele wird die Erfindung weiter erläutert.
Herstellung von SR-Phthalimido-l-(1'S-p-nitrobenzyloxycarbonyl-2'-methylprop-2'-enyl)-4-oxo-2-azetidinsulfensäure
Eine Lösung von 45,5 g p-Nitrobenzyl-6-phthalimido-2,2-dimethylpenam
-3-carboxylät-l-oxid in 50 ml Äthylacetat
wird 10 Minuteri zum Sieden unter Rückfluß erwärmt und
das Lösungsmittel wird dann auf einem Dampfbad abdestilliert. Das NMR-Spektrum des farblosen Rückstands zeigt,
509807/1127
daß eine Mischung aus dem Ausgangssulfoxid und der in der Überschrift genannten Sulfensäure in einem
Verhältnis von 4:1 erhalten worden ist. Diese Mischung wird aus Äthylacetat/Äther (50/200 ml) umkristallisiert
und es werden 27,5 g (60 %) des Sulfoxids erhalten. Das Filtrat wird zur Trockene eingedampft und der
Rückstand wird aus Methylenchlorid und Cyclohexan (200/100 ml) umkristallisiert. Dadurch erhält man 4,5g
(10 %) der kristallinen Sulfensäure vom F. = 152 bis 153°C. IR (KBr) 3160, 1779, 1720, 1760, 1740, 1179,
— 1 -4-
1154 und 770 cm ; Massenspektrum m/e 497, M ; NMR (CDC13/DMSO dg) 120 (s, C-CH3) 305 und 311 (2 Vinyl
und H-3, J=I,0 Hz), 338 und 350 (d, 2, cis-Azetidinon H,
J=4,5 Hz), und 435 Hz (s, SOH, D2O- austauschbar).
Analyse: C23Hi9N3°8S: ber* C 55'53» H 3/85;
N 8,45; 0 25,73; S 6,45%.
gef. C 55,83; H 3,86; N 8,16; 0 25,55; S 6,50 %.
Herstellung von p-Nitrobenzyl-7-phthalimido—
3-methyl-3-cephem-4-carboxylat
Eine Lösung von 6 ml Ν,Ν-Dimethylacetamid, 8 ml Benzol
und einem Tropfen Methansulfonsäure wird unter Rückflußsieden mit 249 mg (0,5 mMol) 3R-Phthalimido-1-(1'S-p-nitrobenzyloxycarbonyl-2'-methylprop-2'-enyl)-4-oxo-2-azetidinsulfensäure
versetzt. Das Gemisch wird 15 Minuten zum Sieden unter Rückfluß erwärmt, wobei eine
Dean-Stark-Wasserfalle angewandt wird. Dann wird die Mischung abgekühlt und im Vakuum zur Trockne eingedampft.
Das Rohprodukt wird durch präparative Dünnschichtchromatographie unter Verwendung eines 2:1 Gemisches
aus Benzol und Äthylacetat gereinigt. Es werden 78 mg (32 %) p-Nitrobenzyl^-phthalimido-S-methyl-S-cephem-4-carboxylat
isoliert. Das NMR-Spektrum ist mit dem
509807/1127
einer authentischen Probe, die durch Veresterung von 7-Phthalimido-3-methyl-3-cephem-4-carbonsäure hergestellt
worden ist, identisch.
5 0 9 8 0 77 1 1 2 7
Claims (4)
- PatentansprücheSR-Phthalimido-l-(1'S-p-nitrobenzyloxycarbonyl-2 r-methylprpp-2'-enyl)-4-oxc—2-azetidinsulfensäure.
- 2. Verfahren zur Herstellung der Verbindung nach Anspruch 1, dadurch gekennzeichnet, daß man p-Nitrobenzyl-6-phthalimido-2,2-dimethylpenam-l-oxid-3-carboxylat in einem inerten Lösungsmittel etwa 5 bis 60 Minuten auf etwa 60 bis 150°C erwärmt ι
2-Acetidinsulfensäure gewinnt.auf etwa 60 bis 150 C erwärmt und die dabei gebildete - 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß man die 2-Azetidinsulfensäure durch fraktioniertes Umkristallisieren gewinnt.
- 4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß man die 2-Azetidinsulfensäure durch Abdampfen des inerten Lösungsmittels von dem Reaktionsgemisch, Umkristallisieren des erhaltenen Rückstands aus einer Mischung aus Äthylacetat und Äthyläther, Eindampfen des erhaltenen Ümkristallisierungsfiltrats zur Trockene und Umkristallisieren des Rückstands des Ümkristallisationsfiltrats aus einer Mischung aus Methylenchlorid und Cyclohexan gewinnt.509807/1127
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50323055 US2793420A (en) | 1955-04-22 | 1955-04-22 | Electrical contacts to silicon |
US54831055 US2810870A (en) | 1955-04-22 | 1955-11-22 | Switching transistor |
US385368A US3880880A (en) | 1955-04-22 | 1973-08-03 | Substituted 2 -azetidinesulfenic acid |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2434208A1 true DE2434208A1 (de) | 1975-02-13 |
Family
ID=27409714
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEW18789A Pending DE1061446B (de) | 1955-04-22 | 1956-04-05 | Verfahren zur Herstellung eines Silizium-Gleichrichters mit einem drei Zonen aufweisenden Halbleiterkoerper |
DEI12485A Pending DE1054587B (de) | 1955-04-22 | 1956-11-21 | Transistor, hergestellt nach dem Gasdiffusionsverfahren, insbesondere fuer Schaltoperationen in datenverarbeitenden Maschinen |
DE2434208A Withdrawn DE2434208A1 (de) | 1955-04-22 | 1974-07-16 | Derivat der 2-azetidinsulfensaeure und verfahren zu seiner herstellung |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEW18789A Pending DE1061446B (de) | 1955-04-22 | 1956-04-05 | Verfahren zur Herstellung eines Silizium-Gleichrichters mit einem drei Zonen aufweisenden Halbleiterkoerper |
DEI12485A Pending DE1054587B (de) | 1955-04-22 | 1956-11-21 | Transistor, hergestellt nach dem Gasdiffusionsverfahren, insbesondere fuer Schaltoperationen in datenverarbeitenden Maschinen |
Country Status (12)
Country | Link |
---|---|
US (3) | US2793420A (de) |
JP (1) | JPS5041852A (de) |
BE (2) | BE818419A (de) |
CA (1) | CA1024519A (de) |
CH (2) | CH350047A (de) |
DE (3) | DE1061446B (de) |
ES (1) | ES428916A1 (de) |
FR (3) | FR1148115A (de) |
GB (3) | GB818419A (de) |
IE (1) | IE39290B1 (de) |
IL (1) | IL44951A (de) |
NL (5) | NL7410353A (de) |
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US2898474A (en) * | 1956-09-04 | 1959-08-04 | Ibm | Semiconductor device encapsulation |
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US2929137A (en) * | 1957-01-04 | 1960-03-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductor devices |
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US2962797A (en) * | 1957-03-12 | 1960-12-06 | John G Mavroides | Power transistors |
US2935453A (en) * | 1957-04-11 | 1960-05-03 | Sylvania Electric Prod | Manufacture of semiconductive translating devices |
US2981874A (en) * | 1957-05-31 | 1961-04-25 | Ibm | High speed, high current transistor |
US3001895A (en) * | 1957-06-06 | 1961-09-26 | Ibm | Semiconductor devices and method of making same |
BE570082A (de) * | 1957-08-07 | 1900-01-01 | ||
DE1073555B (de) * | 1957-11-14 | 1960-01-21 | Compagnie Generale de Telegra phie sans FiI, Paris | Nichtlineare Transistoi Schaltungsanordnung |
US2957112A (en) * | 1957-12-09 | 1960-10-18 | Westinghouse Electric Corp | Treatment of tantalum semiconductor electrodes |
US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
NL235544A (de) * | 1958-01-28 | |||
BE575275A (de) * | 1958-02-03 | 1900-01-01 | ||
US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
US2947925A (en) * | 1958-02-21 | 1960-08-02 | Motorola Inc | Transistor and method of making the same |
US2982892A (en) * | 1958-06-11 | 1961-05-02 | Hughes Aircraft Co | Semiconductor device and method of making the same |
US3060656A (en) * | 1958-06-23 | 1962-10-30 | Sylvania Electric Prod | Manufacture of hermetically sealed semiconductor device |
US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
BE580254A (de) * | 1958-07-17 | |||
US3065286A (en) * | 1958-07-25 | 1962-11-20 | Conax Corp | Thermocouple unit |
US3041509A (en) * | 1958-08-11 | 1962-06-26 | Bendix Corp | Semiconductor device |
DE1231996B (de) * | 1958-09-17 | 1967-01-05 | Siemens Ag | Verfahren zum Reinigen von Silizium-Halbleiterkoerpern |
US3071522A (en) * | 1958-10-30 | 1963-01-01 | Bell Telephone Labor Inc | Low resistance contact for semiconductors |
FR1217793A (fr) * | 1958-12-09 | 1960-05-05 | Perfectionnements à la fabrication des éléments semi-conducteurs | |
FR1209312A (fr) * | 1958-12-17 | 1960-03-01 | Hughes Aircraft Co | Perfectionnements aux dispositifs semi-conducteurs du type à jonction |
US3079254A (en) * | 1959-01-26 | 1963-02-26 | George W Crowley | Photographic fabrication of semiconductor devices |
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US3024179A (en) * | 1959-03-12 | 1962-03-06 | Philco Corp | Semiconductor device fabrication |
US3134159A (en) * | 1959-03-26 | 1964-05-26 | Sprague Electric Co | Method for producing an out-diffused graded-base transistor |
NL252131A (de) * | 1959-06-30 | |||
US3075892A (en) * | 1959-09-15 | 1963-01-29 | Westinghouse Electric Corp | Process for making semiconductor devices |
NL243410A (de) * | 1959-09-16 | 1900-01-01 | ||
US3027501A (en) * | 1959-09-29 | 1962-03-27 | Bell Telephone Labor Inc | Semiconductive device |
CA673999A (en) * | 1959-10-28 | 1963-11-12 | F. Bennett Wesley | Diffusion of semiconductor bodies |
US3202489A (en) * | 1959-12-01 | 1965-08-24 | Hughes Aircraft Co | Gold-aluminum alloy bond electrode attachment |
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US3219837A (en) * | 1960-02-29 | 1965-11-23 | Sanyo Electric Co | Negative resistance transistors |
DE1152195B (de) * | 1960-03-11 | 1963-08-01 | Intermetall | Verfahren zum Kontaktieren von mit Aluminium legierten Halbleiter-anordnungen |
DE1166382B (de) * | 1960-04-14 | 1964-03-26 | Siemens Ag | Niederohmige Kontakt-Elektrode fuer Halbleiterbauelemente, insbesondere fuer Tunneldioden |
US3143444A (en) * | 1960-11-09 | 1964-08-04 | Lucas Industries Ltd | Semi-conductor devices |
DE1197552B (de) * | 1961-02-22 | 1965-07-29 | Siemens Ag | Halbleiteranordnung mit einem das Halbleiter-element gasdicht einschliessenden becherfoermigen Gehaeuse und Verfahren zu ihrer Herstellung |
DE1464669B1 (de) * | 1961-03-06 | 1971-02-04 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet |
US3208887A (en) * | 1961-06-23 | 1965-09-28 | Ibm | Fast switching diodes |
DE1294560C2 (de) * | 1961-08-28 | 1975-01-23 | Semikron, Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg | Verfahren zur weichlotkontaktierung eines halbleiterbauelements |
DE1196793B (de) * | 1961-08-28 | 1965-07-15 | Elektronik M B H | Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente |
US3274454A (en) * | 1961-09-21 | 1966-09-20 | Mallory & Co Inc P R | Semiconductor multi-stack for regulating charging of current producing cells |
NL286405A (de) * | 1961-12-13 | |||
US3287794A (en) * | 1962-03-23 | 1966-11-29 | American Radiator & Standard | Method of soldering semiconductor discs |
US3272659A (en) * | 1962-04-05 | 1966-09-13 | Gen Motors Corp | Tubular thermoelectric array |
NL291461A (de) * | 1962-04-18 | |||
US3126616A (en) * | 1962-10-10 | 1964-03-31 | figure | |
GB1064290A (en) * | 1963-01-14 | 1967-04-05 | Motorola Inc | Method of making semiconductor devices |
NL303035A (de) * | 1963-02-06 | 1900-01-01 | ||
US3283271A (en) * | 1963-09-30 | 1966-11-01 | Raytheon Co | Notched semiconductor junction strain transducer |
US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
GB1065192A (en) * | 1963-09-03 | 1967-04-12 | Rosemount Eng Co Ltd | Pressure gauge |
US3295089A (en) * | 1963-10-11 | 1966-12-27 | American Mach & Foundry | Semiconductor device |
US3274670A (en) * | 1965-03-18 | 1966-09-27 | Bell Telephone Labor Inc | Semiconductor contact |
US3422527A (en) * | 1965-06-21 | 1969-01-21 | Int Rectifier Corp | Method of manufacture of high voltage solar cell |
US3421206A (en) * | 1965-10-19 | 1969-01-14 | Sylvania Electric Prod | Method of forming leads on semiconductor devices |
US3463972A (en) * | 1966-06-15 | 1969-08-26 | Fairchild Camera Instr Co | Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state |
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US3479736A (en) * | 1966-08-31 | 1969-11-25 | Hitachi Ltd | Method of making a semiconductor device |
US3607379A (en) * | 1968-01-22 | 1971-09-21 | Us Navy | Microelectronic interconnection substrate |
US3632436A (en) * | 1969-07-11 | 1972-01-04 | Rca Corp | Contact system for semiconductor devices |
US3836399A (en) * | 1970-02-16 | 1974-09-17 | Texas Instruments Inc | PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg |
US3909930A (en) * | 1972-05-23 | 1975-10-07 | Motorola Inc | Method for fabricating a liquid crystal display device |
US3895975A (en) * | 1973-02-13 | 1975-07-22 | Communications Satellite Corp | Method for the post-alloy diffusion of impurities into a semiconductor |
GB1483526A (en) * | 1974-02-08 | 1977-08-24 | Gist Brocades Nv | Azetidine derivatives |
US3958741A (en) * | 1974-03-04 | 1976-05-25 | Ppg Industries, Inc. | Method of mounting silicon anodes in a chlor-alkali cell |
US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
FR2518812A1 (fr) * | 1981-12-23 | 1983-06-24 | Cit Alcatel | Circuit hybride resistant en pression |
US4603805A (en) * | 1985-05-20 | 1986-08-05 | Motorola, Inc. | Method for enhancing the solderability of nickel layers |
GB2188774B (en) * | 1986-04-02 | 1990-10-31 | Westinghouse Electric Corp | Method of forming a conductive pattern on a semiconductor surface |
EP0381411A3 (de) * | 1989-02-01 | 1992-03-11 | Plessey Semiconductors Limited | Verfahren zum Verbinden von Bauelementen |
DE19713984A1 (de) * | 1997-04-04 | 1998-10-08 | Gruendl & Hoffmann | Baugruppe zum Schalten elektrischer Leistungen |
DE19758444C2 (de) * | 1997-04-04 | 1999-12-09 | Gruendl & Hoffmann | Fluidgekühlte, Rechnereinheit - gesteuerte Baugruppe zum Schalten elektrischer Leistungen |
US7841542B1 (en) * | 2006-11-07 | 2010-11-30 | Howard Rosen | System for supplying communications and power to a thermostat over a two-wire system |
DE102007005161B4 (de) * | 2007-01-29 | 2009-04-09 | Nb Technologies Gmbh | Verfahren zur Metallisierung von Substraten |
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US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
BE594959A (de) * | 1943-07-28 | |||
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
NL84061C (de) * | 1948-06-26 | |||
BE509317A (de) * | 1951-03-07 | 1900-01-01 | ||
GB1130445A (en) * | 1966-04-26 | 1968-10-16 | Beecham Group Ltd | Penicillins |
US3840556A (en) * | 1971-05-28 | 1974-10-08 | Lilly Co Eli | Penicillin conversion by halogen electrophiles and anti-bacterials derived thereby |
US3843682A (en) * | 1972-05-15 | 1974-10-22 | Lilly Co Eli | 2-chlorosulfinyl-3-imido-azetedin-4-ones |
-
0
- NL NL107361D patent/NL107361C/xx active
- BE BE546514D patent/BE546514A/xx unknown
- NL NL204361D patent/NL204361A/xx unknown
- NL NL212349D patent/NL212349A/xx unknown
- NL NL97268D patent/NL97268C/xx active
-
1955
- 1955-04-22 US US50323055 patent/US2793420A/en not_active Expired - Lifetime
- 1955-11-22 US US54831055 patent/US2810870A/en not_active Expired - Lifetime
-
1956
- 1956-03-26 FR FR1148115D patent/FR1148115A/fr not_active Expired
- 1956-04-05 DE DEW18789A patent/DE1061446B/de active Pending
- 1956-04-20 GB GB1214156A patent/GB818419A/en not_active Expired
- 1956-04-21 CH CH350047D patent/CH350047A/fr unknown
- 1956-11-20 GB GB3550256A patent/GB842103A/en not_active Expired
- 1956-11-21 DE DEI12485A patent/DE1054587B/de active Pending
- 1956-11-21 FR FR1172055D patent/FR1172055A/fr not_active Expired
-
1973
- 1973-08-03 US US385368A patent/US3880880A/en not_active Expired - Lifetime
-
1974
- 1974-05-27 IE IE1117/74A patent/IE39290B1/xx unknown
- 1974-06-02 IL IL44951A patent/IL44951A/en unknown
- 1974-06-04 CA CA201,607A patent/CA1024519A/en not_active Expired
- 1974-07-16 DE DE2434208A patent/DE2434208A1/de not_active Withdrawn
- 1974-08-01 NL NL7410353A patent/NL7410353A/xx not_active Application Discontinuation
- 1974-08-02 FR FR7427015A patent/FR2239470B1/fr not_active Expired
- 1974-08-02 BE BE1006107A patent/BE818419A/xx unknown
- 1974-08-02 ES ES428916A patent/ES428916A1/es not_active Expired
- 1974-08-02 CH CH1066774A patent/CH608805A5/xx not_active IP Right Cessation
- 1974-08-02 GB GB3413674A patent/GB1473363A/en not_active Expired
- 1974-08-03 JP JP8939974A patent/JPS5041852A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL97268C (de) | 1900-01-01 |
IE39290L (en) | 1975-02-03 |
US3880880A (en) | 1975-04-29 |
DE1061446B (de) | 1959-07-16 |
FR2239470B1 (de) | 1979-03-09 |
NL204361A (de) | 1900-01-01 |
FR1148115A (fr) | 1957-12-04 |
BE546514A (de) | 1900-01-01 |
GB842103A (en) | 1960-07-20 |
GB1473363A (en) | 1977-05-11 |
IL44951A0 (en) | 1974-09-10 |
JPS5041852A (de) | 1975-04-16 |
FR1172055A (fr) | 1959-02-05 |
CA1024519A (en) | 1978-01-17 |
IE39290B1 (en) | 1978-09-13 |
FR2239470A1 (de) | 1975-02-28 |
DE1054587B (de) | 1959-04-09 |
CH608805A5 (de) | 1979-01-31 |
BE818419A (fr) | 1975-02-03 |
GB818419A (en) | 1959-08-19 |
US2793420A (en) | 1957-05-28 |
NL107361C (de) | 1900-01-01 |
CH350047A (fr) | 1960-11-15 |
NL7410353A (nl) | 1975-02-05 |
US2810870A (en) | 1957-10-22 |
IL44951A (en) | 1976-09-30 |
ES428916A1 (es) | 1976-08-16 |
NL212349A (de) | 1900-01-01 |
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