FR2239470B1 - - Google Patents
Info
- Publication number
- FR2239470B1 FR2239470B1 FR7427015A FR7427015A FR2239470B1 FR 2239470 B1 FR2239470 B1 FR 2239470B1 FR 7427015 A FR7427015 A FR 7427015A FR 7427015 A FR7427015 A FR 7427015A FR 2239470 B1 FR2239470 B1 FR 2239470B1
- Authority
- FR
- France
- Prior art keywords
- phthalimido
- acid
- azetidinesulfenic
- dimethylpenam
- desacetoxycephalosporin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- FSLFXEDHDYJXEO-MGKZRPDYSA-N (4-nitrophenyl)methyl (5r)-6-(1,3-dioxoisoindol-2-yl)-3,3-dimethyl-4,7-dioxo-4$l^{4}-thia-1-azabicyclo[3.2.0]heptane-2-carboxylate Chemical compound O=S([C@H]1N2C(C1N1C(C3=CC=CC=C3C1=O)=O)=O)C(C)(C)C2C(=O)OCC1=CC=C([N+]([O-])=O)C=C1 FSLFXEDHDYJXEO-MGKZRPDYSA-N 0.000 abstract 1
- 238000010504 bond cleavage reaction Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- RVEZZJVBDQCTEF-UHFFFAOYSA-N sulfenic acid Chemical compound SO RVEZZJVBDQCTEF-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50323055 US2793420A (en) | 1955-04-22 | 1955-04-22 | Electrical contacts to silicon |
US54831055 US2810870A (en) | 1955-04-22 | 1955-11-22 | Switching transistor |
US385368A US3880880A (en) | 1955-04-22 | 1973-08-03 | Substituted 2 -azetidinesulfenic acid |
Publications (2)
Publication Number | Publication Date |
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FR2239470A1 FR2239470A1 (fr) | 1975-02-28 |
FR2239470B1 true FR2239470B1 (fr) | 1979-03-09 |
Family
ID=27409714
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1148115D Expired FR1148115A (fr) | 1955-04-22 | 1956-03-26 | Perfectionnements aux redresseurs au silicium ainsi qu'à leurs procédés de fabrication |
FR1172055D Expired FR1172055A (fr) | 1955-04-22 | 1956-11-21 | Transistor de commutation |
FR7427015A Expired FR2239470B1 (fr) | 1955-04-22 | 1974-08-02 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1148115D Expired FR1148115A (fr) | 1955-04-22 | 1956-03-26 | Perfectionnements aux redresseurs au silicium ainsi qu'à leurs procédés de fabrication |
FR1172055D Expired FR1172055A (fr) | 1955-04-22 | 1956-11-21 | Transistor de commutation |
Country Status (12)
Country | Link |
---|---|
US (3) | US2793420A (fr) |
JP (1) | JPS5041852A (fr) |
BE (2) | BE818419A (fr) |
CA (1) | CA1024519A (fr) |
CH (2) | CH350047A (fr) |
DE (3) | DE1061446B (fr) |
ES (1) | ES428916A1 (fr) |
FR (3) | FR1148115A (fr) |
GB (3) | GB818419A (fr) |
IE (1) | IE39290B1 (fr) |
IL (1) | IL44951A (fr) |
NL (5) | NL7410353A (fr) |
Families Citing this family (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL96809C (fr) * | 1954-07-21 | |||
US2981645A (en) * | 1955-04-22 | 1961-04-25 | Ibm | Semiconductor device fabrication |
NL112317C (fr) * | 1956-05-15 | |||
US3054035A (en) * | 1956-05-17 | 1962-09-11 | Gulton Ind Inc | Ceramic components and method of making same |
US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
US2898474A (en) * | 1956-09-04 | 1959-08-04 | Ibm | Semiconductor device encapsulation |
BE560551A (fr) * | 1956-09-05 | |||
US2881344A (en) * | 1956-09-28 | 1959-04-07 | Hyman A Michlin | Electroluminescent capacitorphosphor lamp |
US3018539A (en) * | 1956-11-06 | 1962-01-30 | Motorola Inc | Diffused base transistor and method of making same |
US2982893A (en) * | 1956-11-16 | 1961-05-02 | Raytheon Co | Electrical connections to semiconductor bodies |
US2937439A (en) * | 1956-11-21 | 1960-05-24 | Texas Instruments Inc | Method of making ohmic connections to semiconductor devices |
US2929137A (en) * | 1957-01-04 | 1960-03-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductor devices |
NL224227A (fr) * | 1957-01-29 | |||
US2962797A (en) * | 1957-03-12 | 1960-12-06 | John G Mavroides | Power transistors |
US2935453A (en) * | 1957-04-11 | 1960-05-03 | Sylvania Electric Prod | Manufacture of semiconductive translating devices |
US2981874A (en) * | 1957-05-31 | 1961-04-25 | Ibm | High speed, high current transistor |
US3001895A (en) * | 1957-06-06 | 1961-09-26 | Ibm | Semiconductor devices and method of making same |
BE570182A (fr) * | 1957-08-07 | 1900-01-01 | ||
DE1073555B (de) * | 1957-11-14 | 1960-01-21 | Compagnie Generale de Telegra phie sans FiI, Paris | Nichtlineare Transistoi Schaltungsanordnung |
US2957112A (en) * | 1957-12-09 | 1960-10-18 | Westinghouse Electric Corp | Treatment of tantalum semiconductor electrodes |
US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
NL235544A (fr) * | 1958-01-28 | |||
NL235742A (fr) * | 1958-02-03 | 1900-01-01 | ||
US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
US2947925A (en) * | 1958-02-21 | 1960-08-02 | Motorola Inc | Transistor and method of making the same |
US2982892A (en) * | 1958-06-11 | 1961-05-02 | Hughes Aircraft Co | Semiconductor device and method of making the same |
US3060656A (en) * | 1958-06-23 | 1962-10-30 | Sylvania Electric Prod | Manufacture of hermetically sealed semiconductor device |
US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
BE580254A (fr) * | 1958-07-17 | |||
US3065286A (en) * | 1958-07-25 | 1962-11-20 | Conax Corp | Thermocouple unit |
US3041509A (en) * | 1958-08-11 | 1962-06-26 | Bendix Corp | Semiconductor device |
DE1231996B (de) * | 1958-09-17 | 1967-01-05 | Siemens Ag | Verfahren zum Reinigen von Silizium-Halbleiterkoerpern |
US3071522A (en) * | 1958-10-30 | 1963-01-01 | Bell Telephone Labor Inc | Low resistance contact for semiconductors |
FR1217793A (fr) * | 1958-12-09 | 1960-05-05 | Perfectionnements à la fabrication des éléments semi-conducteurs | |
FR1209312A (fr) * | 1958-12-17 | 1960-03-01 | Hughes Aircraft Co | Perfectionnements aux dispositifs semi-conducteurs du type à jonction |
US3079254A (en) * | 1959-01-26 | 1963-02-26 | George W Crowley | Photographic fabrication of semiconductor devices |
US3253320A (en) * | 1959-02-25 | 1966-05-31 | Transitron Electronic Corp | Method of making semi-conductor devices with plated area |
US3219890A (en) * | 1959-02-25 | 1965-11-23 | Transitron Electronic Corp | Semiconductor barrier-layer device and terminal structure thereon |
US3024179A (en) * | 1959-03-12 | 1962-03-06 | Philco Corp | Semiconductor device fabrication |
US3134159A (en) * | 1959-03-26 | 1964-05-26 | Sprague Electric Co | Method for producing an out-diffused graded-base transistor |
NL252131A (fr) * | 1959-06-30 | |||
US3075892A (en) * | 1959-09-15 | 1963-01-29 | Westinghouse Electric Corp | Process for making semiconductor devices |
NL243410A (fr) * | 1959-09-16 | 1900-01-01 | ||
US3027501A (en) * | 1959-09-29 | 1962-03-27 | Bell Telephone Labor Inc | Semiconductive device |
CA673999A (en) * | 1959-10-28 | 1963-11-12 | F. Bennett Wesley | Diffusion of semiconductor bodies |
US3202489A (en) * | 1959-12-01 | 1965-08-24 | Hughes Aircraft Co | Gold-aluminum alloy bond electrode attachment |
NL259236A (fr) * | 1959-12-30 | |||
US3219837A (en) * | 1960-02-29 | 1965-11-23 | Sanyo Electric Co | Negative resistance transistors |
DE1152195B (de) * | 1960-03-11 | 1963-08-01 | Intermetall | Verfahren zum Kontaktieren von mit Aluminium legierten Halbleiter-anordnungen |
DE1166382B (de) * | 1960-04-14 | 1964-03-26 | Siemens Ag | Niederohmige Kontakt-Elektrode fuer Halbleiterbauelemente, insbesondere fuer Tunneldioden |
DE1414898A1 (de) * | 1960-11-09 | 1969-01-09 | Lucas Industries Ltd | Verfahren zur Herstellung von Halbleitern |
DE1197552B (de) * | 1961-02-22 | 1965-07-29 | Siemens Ag | Halbleiteranordnung mit einem das Halbleiter-element gasdicht einschliessenden becherfoermigen Gehaeuse und Verfahren zu ihrer Herstellung |
DE1464669B1 (de) * | 1961-03-06 | 1971-02-04 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet |
US3208887A (en) * | 1961-06-23 | 1965-09-28 | Ibm | Fast switching diodes |
DE1196793B (de) * | 1961-08-28 | 1965-07-15 | Elektronik M B H | Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente |
DE1294560C2 (de) * | 1961-08-28 | 1975-01-23 | Semikron, Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg | Verfahren zur weichlotkontaktierung eines halbleiterbauelements |
US3274454A (en) * | 1961-09-21 | 1966-09-20 | Mallory & Co Inc P R | Semiconductor multi-stack for regulating charging of current producing cells |
NL286405A (fr) * | 1961-12-13 | |||
US3287794A (en) * | 1962-03-23 | 1966-11-29 | American Radiator & Standard | Method of soldering semiconductor discs |
US3272659A (en) * | 1962-04-05 | 1966-09-13 | Gen Motors Corp | Tubular thermoelectric array |
NL291461A (fr) * | 1962-04-18 | |||
US3126616A (en) * | 1962-10-10 | 1964-03-31 | figure | |
GB1064290A (en) * | 1963-01-14 | 1967-04-05 | Motorola Inc | Method of making semiconductor devices |
NL303035A (fr) * | 1963-02-06 | 1900-01-01 | ||
US3283271A (en) * | 1963-09-30 | 1966-11-01 | Raytheon Co | Notched semiconductor junction strain transducer |
US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
GB1065192A (en) * | 1963-09-03 | 1967-04-12 | Rosemount Eng Co Ltd | Pressure gauge |
US3295089A (en) * | 1963-10-11 | 1966-12-27 | American Mach & Foundry | Semiconductor device |
US3274670A (en) * | 1965-03-18 | 1966-09-27 | Bell Telephone Labor Inc | Semiconductor contact |
US3422527A (en) * | 1965-06-21 | 1969-01-21 | Int Rectifier Corp | Method of manufacture of high voltage solar cell |
US3421206A (en) * | 1965-10-19 | 1969-01-14 | Sylvania Electric Prod | Method of forming leads on semiconductor devices |
US3463972A (en) * | 1966-06-15 | 1969-08-26 | Fairchild Camera Instr Co | Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state |
US3451030A (en) * | 1966-07-01 | 1969-06-17 | Gen Electric | Solder-bonded semiconductor strain gauges |
US3507732A (en) * | 1966-07-05 | 1970-04-21 | Hottinger Messtechnik Baldwin | Protection of strain gage transducers |
US3479736A (en) * | 1966-08-31 | 1969-11-25 | Hitachi Ltd | Method of making a semiconductor device |
US3607379A (en) * | 1968-01-22 | 1971-09-21 | Us Navy | Microelectronic interconnection substrate |
US3632436A (en) * | 1969-07-11 | 1972-01-04 | Rca Corp | Contact system for semiconductor devices |
US3836399A (en) * | 1970-02-16 | 1974-09-17 | Texas Instruments Inc | PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg |
US3909930A (en) * | 1972-05-23 | 1975-10-07 | Motorola Inc | Method for fabricating a liquid crystal display device |
US3895975A (en) * | 1973-02-13 | 1975-07-22 | Communications Satellite Corp | Method for the post-alloy diffusion of impurities into a semiconductor |
GB1483526A (en) * | 1974-02-08 | 1977-08-24 | Gist Brocades Nv | Azetidine derivatives |
US3958741A (en) * | 1974-03-04 | 1976-05-25 | Ppg Industries, Inc. | Method of mounting silicon anodes in a chlor-alkali cell |
US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
FR2518812A1 (fr) * | 1981-12-23 | 1983-06-24 | Cit Alcatel | Circuit hybride resistant en pression |
US4603805A (en) * | 1985-05-20 | 1986-08-05 | Motorola, Inc. | Method for enhancing the solderability of nickel layers |
GB2188774B (en) * | 1986-04-02 | 1990-10-31 | Westinghouse Electric Corp | Method of forming a conductive pattern on a semiconductor surface |
EP0381411A3 (fr) * | 1989-02-01 | 1992-03-11 | Plessey Semiconductors Limited | Procédés pour joindre des composants |
DE19758444C2 (de) * | 1997-04-04 | 1999-12-09 | Gruendl & Hoffmann | Fluidgekühlte, Rechnereinheit - gesteuerte Baugruppe zum Schalten elektrischer Leistungen |
DE19713984A1 (de) * | 1997-04-04 | 1998-10-08 | Gruendl & Hoffmann | Baugruppe zum Schalten elektrischer Leistungen |
US7841542B1 (en) * | 2006-11-07 | 2010-11-30 | Howard Rosen | System for supplying communications and power to a thermostat over a two-wire system |
DE102007005161B4 (de) * | 2007-01-29 | 2009-04-09 | Nb Technologies Gmbh | Verfahren zur Metallisierung von Substraten |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
BE594959A (fr) * | 1943-07-28 | |||
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
BE489418A (fr) * | 1948-06-26 | |||
NL99536C (fr) * | 1951-03-07 | 1900-01-01 | ||
GB1130445A (en) * | 1966-04-26 | 1968-10-16 | Beecham Group Ltd | Penicillins |
US3840556A (en) * | 1971-05-28 | 1974-10-08 | Lilly Co Eli | Penicillin conversion by halogen electrophiles and anti-bacterials derived thereby |
US3843682A (en) * | 1972-05-15 | 1974-10-22 | Lilly Co Eli | 2-chlorosulfinyl-3-imido-azetedin-4-ones |
-
0
- NL NL212349D patent/NL212349A/xx unknown
- BE BE546514D patent/BE546514A/xx unknown
- NL NL97268D patent/NL97268C/xx active
- NL NL107361D patent/NL107361C/xx active
- NL NL204361D patent/NL204361A/xx unknown
-
1955
- 1955-04-22 US US50323055 patent/US2793420A/en not_active Expired - Lifetime
- 1955-11-22 US US54831055 patent/US2810870A/en not_active Expired - Lifetime
-
1956
- 1956-03-26 FR FR1148115D patent/FR1148115A/fr not_active Expired
- 1956-04-05 DE DEW18789A patent/DE1061446B/de active Pending
- 1956-04-20 GB GB1214156A patent/GB818419A/en not_active Expired
- 1956-04-21 CH CH350047D patent/CH350047A/fr unknown
- 1956-11-20 GB GB3550256A patent/GB842103A/en not_active Expired
- 1956-11-21 DE DEI12485A patent/DE1054587B/de active Pending
- 1956-11-21 FR FR1172055D patent/FR1172055A/fr not_active Expired
-
1973
- 1973-08-03 US US385368A patent/US3880880A/en not_active Expired - Lifetime
-
1974
- 1974-05-27 IE IE1117/74A patent/IE39290B1/xx unknown
- 1974-06-02 IL IL44951A patent/IL44951A/en unknown
- 1974-06-04 CA CA201,607A patent/CA1024519A/fr not_active Expired
- 1974-07-16 DE DE2434208A patent/DE2434208A1/de not_active Withdrawn
- 1974-08-01 NL NL7410353A patent/NL7410353A/xx not_active Application Discontinuation
- 1974-08-02 FR FR7427015A patent/FR2239470B1/fr not_active Expired
- 1974-08-02 ES ES428916A patent/ES428916A1/es not_active Expired
- 1974-08-02 GB GB3413674A patent/GB1473363A/en not_active Expired
- 1974-08-02 BE BE1006107A patent/BE818419A/fr unknown
- 1974-08-02 CH CH1066774A patent/CH608805A5/xx not_active IP Right Cessation
- 1974-08-03 JP JP8939974A patent/JPS5041852A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL7410353A (nl) | 1975-02-05 |
GB1473363A (en) | 1977-05-11 |
US2793420A (en) | 1957-05-28 |
GB842103A (en) | 1960-07-20 |
US3880880A (en) | 1975-04-29 |
DE2434208A1 (de) | 1975-02-13 |
CA1024519A (fr) | 1978-01-17 |
BE546514A (fr) | 1900-01-01 |
FR2239470A1 (fr) | 1975-02-28 |
DE1061446B (de) | 1959-07-16 |
ES428916A1 (es) | 1976-08-16 |
CH350047A (fr) | 1960-11-15 |
FR1172055A (fr) | 1959-02-05 |
US2810870A (en) | 1957-10-22 |
DE1054587B (de) | 1959-04-09 |
NL204361A (fr) | 1900-01-01 |
CH608805A5 (fr) | 1979-01-31 |
JPS5041852A (fr) | 1975-04-16 |
IL44951A (en) | 1976-09-30 |
IL44951A0 (en) | 1974-09-10 |
FR1148115A (fr) | 1957-12-04 |
BE818419A (fr) | 1975-02-03 |
NL107361C (fr) | 1900-01-01 |
IE39290B1 (en) | 1978-09-13 |
GB818419A (en) | 1959-08-19 |
NL97268C (fr) | 1900-01-01 |
IE39290L (en) | 1975-02-03 |
NL212349A (fr) | 1900-01-01 |
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Legal Events
Date | Code | Title | Description |
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ST | Notification of lapse |