DE19744686C2 - Integrierte Halbleiterschaltungseinrichtung mit einer einstellbaren Hochspannungserfassungsschaltung zum Erfassen hoher Spannungspegel - Google Patents

Integrierte Halbleiterschaltungseinrichtung mit einer einstellbaren Hochspannungserfassungsschaltung zum Erfassen hoher Spannungspegel

Info

Publication number
DE19744686C2
DE19744686C2 DE19744686A DE19744686A DE19744686C2 DE 19744686 C2 DE19744686 C2 DE 19744686C2 DE 19744686 A DE19744686 A DE 19744686A DE 19744686 A DE19744686 A DE 19744686A DE 19744686 C2 DE19744686 C2 DE 19744686C2
Authority
DE
Germany
Prior art keywords
voltage
circuit
high voltage
down converter
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19744686A
Other languages
German (de)
English (en)
Other versions
DE19744686A1 (de
Inventor
Tomohisa Wada
Masaaki Mihara
Yasuhiko Taito
Yoshikazu Miyawaki
Katsumi Dosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19744686A1 publication Critical patent/DE19744686A1/de
Application granted granted Critical
Publication of DE19744686C2 publication Critical patent/DE19744686C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dc-Dc Converters (AREA)
DE19744686A 1997-04-11 1997-10-09 Integrierte Halbleiterschaltungseinrichtung mit einer einstellbaren Hochspannungserfassungsschaltung zum Erfassen hoher Spannungspegel Expired - Fee Related DE19744686C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09359897A JP3676904B2 (ja) 1997-04-11 1997-04-11 半導体集積回路

Publications (2)

Publication Number Publication Date
DE19744686A1 DE19744686A1 (de) 1998-10-15
DE19744686C2 true DE19744686C2 (de) 2000-03-09

Family

ID=14086763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19744686A Expired - Fee Related DE19744686C2 (de) 1997-04-11 1997-10-09 Integrierte Halbleiterschaltungseinrichtung mit einer einstellbaren Hochspannungserfassungsschaltung zum Erfassen hoher Spannungspegel

Country Status (4)

Country Link
US (1) US6008674A (enExample)
JP (1) JP3676904B2 (enExample)
KR (1) KR100286184B1 (enExample)
DE (1) DE19744686C2 (enExample)

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JP2851767B2 (ja) * 1992-10-15 1999-01-27 三菱電機株式会社 電圧供給回路および内部降圧回路
US5949253A (en) * 1997-04-18 1999-09-07 Adaptec, Inc. Low voltage differential driver with multiple drive strengths
JP2000019200A (ja) * 1998-07-01 2000-01-21 Mitsubishi Electric Corp 電位検出回路
US6300810B1 (en) * 1999-02-05 2001-10-09 United Microelectronics, Corp. Voltage down converter with switched hysteresis
US6448823B1 (en) * 1999-11-30 2002-09-10 Xilinx, Inc. Tunable circuit for detection of negative voltages
JP5102413B2 (ja) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP4503150B2 (ja) * 2000-07-13 2010-07-14 ユナイテッド・マイクロエレクトロニクス・コーポレイション 電圧ダウンコンバータおよび電圧ｖｃｃを変換するための方法
KR100550637B1 (ko) * 2000-12-30 2006-02-10 주식회사 하이닉스반도체 저전압 감지기를 내장한 고전압 검출기
US6385109B1 (en) * 2001-01-30 2002-05-07 Motorola, Inc. Reference voltage generator for MRAM and method
US20030197546A1 (en) * 2001-07-09 2003-10-23 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
US6636082B1 (en) * 2002-04-16 2003-10-21 Texas Instruments Incorporated System and method for detecting a negative supply fault
DE10218097B4 (de) 2002-04-23 2004-02-26 Infineon Technologies Ag Schaltungsanordnung zur Spannungsregelung
JP3947044B2 (ja) * 2002-05-31 2007-07-18 富士通株式会社 入出力バッファ
US6586984B1 (en) * 2002-07-12 2003-07-01 Lsi Logic Corporation Method for preventing damage to IO devices due to over voltage at pin
DE10356420A1 (de) * 2002-12-02 2004-06-24 Samsung Electronics Co., Ltd., Suwon Spannungsgeneratorschaltung
US6909642B2 (en) * 2003-03-14 2005-06-21 Infineon Technologies North American Corp. Self trimming voltage generator
US6861895B1 (en) * 2003-06-17 2005-03-01 Xilinx Inc High voltage regulation circuit to minimize voltage overshoot
EP1659690B1 (en) * 2004-11-22 2013-11-06 Semiconductor Components Industries, LLC Comparator for input voltages higher than supply voltage
KR100675886B1 (ko) * 2005-03-29 2007-02-02 주식회사 하이닉스반도체 전압레벨 검출회로
JP2007226938A (ja) * 2006-01-25 2007-09-06 Citizen Holdings Co Ltd 不揮発性半導体記憶装置
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
US7589568B2 (en) * 2007-05-04 2009-09-15 Microchip Technology Incorporated Variable power and response time brown-out-reset circuit
JP5867065B2 (ja) 2011-12-22 2016-02-24 株式会社ソシオネクスト 降圧型電源回路
US9379709B2 (en) 2014-06-30 2016-06-28 Finisar Corporation Signal conversion
JP2014225267A (ja) * 2014-06-30 2014-12-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 電圧検知回路
WO2016201596A1 (en) 2015-06-15 2016-12-22 Micron Technology, Inc. Apparatuses and methods for providing reference voltages
JP6707477B2 (ja) * 2017-02-07 2020-06-10 株式会社東芝 コンパレータ
US10763839B2 (en) * 2018-07-12 2020-09-01 Texas Instruments Incorporated Buffer Circuit
US11393512B2 (en) 2019-11-15 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
CN111521861B (zh) * 2020-04-10 2022-07-22 南开大学深圳研究院 一种用于过压保护的高电压检测电路
DE112021006258T5 (de) * 2021-02-03 2023-09-14 Rohm Co., Ltd. Stromversorgungsvorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226047A1 (de) * 1991-08-19 1993-02-25 Samsung Electronics Co Ltd Eine interne spannungsversorgung erzeugender schaltkreis

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083045A (en) * 1987-02-25 1992-01-21 Samsung Electronics Co., Ltd. High voltage follower and sensing circuit
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
US5280198A (en) * 1992-11-06 1994-01-18 Intel Corporation Power supply level detector
TW239190B (enExample) * 1993-04-30 1995-01-21 Philips Electronics Nv
JPH07226075A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体記憶装置
JP3597281B2 (ja) * 1995-11-28 2004-12-02 株式会社ルネサステクノロジ 電位検出回路及び半導体集積回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226047A1 (de) * 1991-08-19 1993-02-25 Samsung Electronics Co Ltd Eine interne spannungsversorgung erzeugender schaltkreis

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
U. TIETZE, CH. SCHENK: HalbleiterschaltungstechnikSpringer Verlag, 9.Aufl., 1990, S.180,181,371-373,558,559 *

Also Published As

Publication number Publication date
JPH10289023A (ja) 1998-10-27
KR100286184B1 (ko) 2001-04-16
DE19744686A1 (de) 1998-10-15
JP3676904B2 (ja) 2005-07-27
US6008674A (en) 1999-12-28
KR19980079407A (ko) 1998-11-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee