KR100286184B1 - 고전압레벨검출용고전압검출회로를구비한반도체직접회로장치 - Google Patents

고전압레벨검출용고전압검출회로를구비한반도체직접회로장치 Download PDF

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KR100286184B1
KR100286184B1 KR1019970051992A KR19970051992A KR100286184B1 KR 100286184 B1 KR100286184 B1 KR 100286184B1 KR 1019970051992 A KR1019970051992 A KR 1019970051992A KR 19970051992 A KR19970051992 A KR 19970051992A KR 100286184 B1 KR100286184 B1 KR 100286184B1
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South Korea
Prior art keywords
high voltage
voltage
circuit
drop
voltage drop
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Expired - Fee Related
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KR1019970051992A
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English (en)
Korean (ko)
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KR19980079407A (ko
Inventor
토모히사 와다
야수히코 토이토
요시카주 미야와키
마사아키 미하라
카추미 도사카
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR19980079407A publication Critical patent/KR19980079407A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dc-Dc Converters (AREA)
KR1019970051992A 1997-04-11 1997-10-10 고전압레벨검출용고전압검출회로를구비한반도체직접회로장치 Expired - Fee Related KR100286184B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-093598 1997-04-11
JP09359897A JP3676904B2 (ja) 1997-04-11 1997-04-11 半導体集積回路

Publications (2)

Publication Number Publication Date
KR19980079407A KR19980079407A (ko) 1998-11-25
KR100286184B1 true KR100286184B1 (ko) 2001-04-16

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KR1019970051992A Expired - Fee Related KR100286184B1 (ko) 1997-04-11 1997-10-10 고전압레벨검출용고전압검출회로를구비한반도체직접회로장치

Country Status (4)

Country Link
US (1) US6008674A (enExample)
JP (1) JP3676904B2 (enExample)
KR (1) KR100286184B1 (enExample)
DE (1) DE19744686C2 (enExample)

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JP2851767B2 (ja) * 1992-10-15 1999-01-27 三菱電機株式会社 電圧供給回路および内部降圧回路
US5949253A (en) * 1997-04-18 1999-09-07 Adaptec, Inc. Low voltage differential driver with multiple drive strengths
JP2000019200A (ja) * 1998-07-01 2000-01-21 Mitsubishi Electric Corp 電位検出回路
US6300810B1 (en) * 1999-02-05 2001-10-09 United Microelectronics, Corp. Voltage down converter with switched hysteresis
US6448823B1 (en) * 1999-11-30 2002-09-10 Xilinx, Inc. Tunable circuit for detection of negative voltages
JP5102413B2 (ja) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP4503150B2 (ja) * 2000-07-13 2010-07-14 ユナイテッド・マイクロエレクトロニクス・コーポレイション 電圧ダウンコンバータおよび電圧ｖｃｃを変換するための方法
KR100550637B1 (ko) * 2000-12-30 2006-02-10 주식회사 하이닉스반도체 저전압 감지기를 내장한 고전압 검출기
US6385109B1 (en) * 2001-01-30 2002-05-07 Motorola, Inc. Reference voltage generator for MRAM and method
US20030197546A1 (en) * 2001-07-09 2003-10-23 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
US6636082B1 (en) * 2002-04-16 2003-10-21 Texas Instruments Incorporated System and method for detecting a negative supply fault
DE10218097B4 (de) 2002-04-23 2004-02-26 Infineon Technologies Ag Schaltungsanordnung zur Spannungsregelung
JP3947044B2 (ja) * 2002-05-31 2007-07-18 富士通株式会社 入出力バッファ
US6586984B1 (en) * 2002-07-12 2003-07-01 Lsi Logic Corporation Method for preventing damage to IO devices due to over voltage at pin
DE10356420A1 (de) * 2002-12-02 2004-06-24 Samsung Electronics Co., Ltd., Suwon Spannungsgeneratorschaltung
US6909642B2 (en) * 2003-03-14 2005-06-21 Infineon Technologies North American Corp. Self trimming voltage generator
US6861895B1 (en) * 2003-06-17 2005-03-01 Xilinx Inc High voltage regulation circuit to minimize voltage overshoot
EP1659690B1 (en) * 2004-11-22 2013-11-06 Semiconductor Components Industries, LLC Comparator for input voltages higher than supply voltage
KR100675886B1 (ko) * 2005-03-29 2007-02-02 주식회사 하이닉스반도체 전압레벨 검출회로
JP2007226938A (ja) * 2006-01-25 2007-09-06 Citizen Holdings Co Ltd 不揮発性半導体記憶装置
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
US7589568B2 (en) * 2007-05-04 2009-09-15 Microchip Technology Incorporated Variable power and response time brown-out-reset circuit
JP5867065B2 (ja) 2011-12-22 2016-02-24 株式会社ソシオネクスト 降圧型電源回路
US9379709B2 (en) 2014-06-30 2016-06-28 Finisar Corporation Signal conversion
JP2014225267A (ja) * 2014-06-30 2014-12-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 電圧検知回路
WO2016201596A1 (en) 2015-06-15 2016-12-22 Micron Technology, Inc. Apparatuses and methods for providing reference voltages
JP6707477B2 (ja) * 2017-02-07 2020-06-10 株式会社東芝 コンパレータ
US10763839B2 (en) * 2018-07-12 2020-09-01 Texas Instruments Incorporated Buffer Circuit
US11393512B2 (en) 2019-11-15 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
CN111521861B (zh) * 2020-04-10 2022-07-22 南开大学深圳研究院 一种用于过压保护的高电压检测电路
DE112021006258T5 (de) * 2021-02-03 2023-09-14 Rohm Co., Ltd. Stromversorgungsvorrichtung

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH07226075A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体記憶装置

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US5083045A (en) * 1987-02-25 1992-01-21 Samsung Electronics Co., Ltd. High voltage follower and sensing circuit
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
US5280198A (en) * 1992-11-06 1994-01-18 Intel Corporation Power supply level detector
TW239190B (enExample) * 1993-04-30 1995-01-21 Philips Electronics Nv
JP3597281B2 (ja) * 1995-11-28 2004-12-02 株式会社ルネサステクノロジ 電位検出回路及び半導体集積回路

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH07226075A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH10289023A (ja) 1998-10-27
DE19744686A1 (de) 1998-10-15
JP3676904B2 (ja) 2005-07-27
DE19744686C2 (de) 2000-03-09
US6008674A (en) 1999-12-28
KR19980079407A (ko) 1998-11-25

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