DE1143493T1 - Sublimationsanwachse von Siliziumkarbidkristallen - Google Patents

Sublimationsanwachse von Siliziumkarbidkristallen

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Publication number
DE1143493T1
DE1143493T1 DE1143493T DE01201980T DE1143493T1 DE 1143493 T1 DE1143493 T1 DE 1143493T1 DE 1143493 T DE1143493 T DE 1143493T DE 01201980 T DE01201980 T DE 01201980T DE 1143493 T1 DE1143493 T1 DE 1143493T1
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Prior art keywords
starting powder
seed crystal
temperature
growth
maintaining
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Pending
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DE1143493T
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English (en)
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DE20101980U1 (de
Inventor
Calvin H. Carter Jr.
Robert F. Davis
Charles Eric Hunter
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North Carolina State University
University of California
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North Carolina State University
University of California
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Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Publication of DE1143493T1 publication Critical patent/DE1143493T1/de
Pending legal-status Critical Current

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Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/021—Continuous process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Claims (16)

PATENTANSPRÜCHE
1. Verfahren zur wiederholbaren Steuerung des Aufwachsens von großen Einkristallen eines einzelnen Polytyps Siliziumcarbid unabhängig von der Verwendung von Verunreinigungen als ein primärer Mechanismus zur Steuerung des Wachsturas von PoIytypen, wobei die Kristalle zur Verwendung in der Herstellung elektrischer Geräte geeignet sind, wobei das Verfahren Folgendes aufweist:
Einführen eines monokristallinen Impfkristalls (17, 32) aus Siliziumcarbid eines gewünschten Polytyps und eines Siliziumcarbid-Ausgangspulvers (40) in ein Sublimationssystem; Erhöhen der Temperatur des Siliziumcarbid-Ausgangspulvers auf eine Temperatur, die zur Sublimation des Ausgangspulvers ausreicht; während
die Temperatur der Aufwachsoberfläche des Impfkristalls auf eine Temperatur angehoben wird, die nahezu der Temperatur des Ausgangspulvers entspricht, aber niedriger ist als die Temperatur des Ausgangspulvers und niedriger als diejenige Temperatur, bei der Siliziumcarbid unter den .Gasdruckbedingungen des Sublimationssystems sublimiert;
gekennzeichnet durch
Erzeugen und Aufrechterhalten eines konstanten Stroms dampfförmigen Si, Si2C und SiC2 pro Flächeneinheit und Zeiteinheit aus dem Ausgangspulver (40) zur Aufwachsoberfläche des Impfkristalls (17, 32) über eine hinreichend lange Zeit, um ein gewünschtes Maß des makroskopischen Wachstums aus monokristallinem Siliziumcarbid des gewünschten Polytyps auf dem Impfkristall zu erzeugen, wobei der konstante Strom durch ein Verfahren aufrechterhalten wird, das die Aufrechterhaltung eines konstanten Wärmegradienten umfasst, gemessen zwischen der Aufwachsoberfläche des Impfkristalls und dem Ausgangspulver während des Aufwachsens des Kristalls und des Verbrauchs des Ausgangspulvers, wobei die Aufwachsoberfläche des Impfkristalls und das Ausgangspulver auf ihren jeweiligen ver-
DE/FP 1 1434S3T1
schiedenen Temperaturen gehalten werden, um dadurch eine konstante Wachsturnsrate des Impf-Einkristalls und ein gleichmäßiges Wachstum eines einzigen Polytpyen auf der einzigen Aufwachsoberfläche des Impfkristalls aufrechtzuerhalten.
2. Verfahren nach Anspruch 1, bei dem der Schritt des Aufrechterhaltens des konstanten Wärmegradienten zwischen der Aufwachsoberfläche des Impfkristalls (17, 32) und dem Ausgangspulver (40) die Schaffung einer relativen Bewegung zwischen der Aufwachsoberfläche des Impfkristalls und dem Ausgangspulver während des Wachstums des Impfkristalls beinhaltet, wobei das Ausgangspulver auf der Temperatur gehalten wird, die zur Sublimation von Siliziumcarbid ausreicht, und der Impfkristall auf der Temperatur nahe der Temperatur des Ausgangspulver, aber niedriger als die Temperatur des Aus-'7 gangspulvers und niedriger als die Temperatur, bei der Siliziumcarbid sublimiert, gehalten wird.
3. Verfahren nach Anspruch 1, bei dem der Schritt des Aufrechterhaltens des konstanten Wärmegradienten zwischen der Aufwachsoberfläche des Impfkristalls und dem Ausgangspulver die Aufrechterhaltung eines festen Abstands zwischen der Aufwachsoberfläche des Impfkristalls und dem Ausgangspulver während des Wachstums des Kristalls beinhaltet.
4. Verfahren nach Anspruch 1, bei dem der Schritt des Aufrechterhaltens des konstanten Wärmegradienten zwischen der Aufwachsoberfläche des Impfkristalls und dem Ausgangspulver die unabhängige Regelung der Temperaturen des Ausgangspulvers und des Impfkristalls beinhaltet, indem die Temperatur des Ausgangspulvers und die Temperatur des Impfkristalls getrennt überwacht und die Temperatur des Ausgangspulvers und die Temperatur des Impfkristalls getrennt eingeregelt werden.
OE/EP 1 U3A93T1
5. Verfahren nach einem der vorstehenden Ansprüche, das den Schritt der Rotation des Impfkristalls (17, 32) während des Wachstums des Impfkristalls und des Verbrauchs des Ausgangspulvers (40) enthält, um dadurch ein konstantes Temperaturprofil über die Aufwachsoberfläche des Impfkristalls aufrechtzuerhalten, den Einfluss von Flussschwankungen zu dämpfen und um zu verhindern, dass der wachsende Kristall (33) an unerwünschten mechanischen Abschnitten des Sublimationssystems haften bleibt.
6. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt der Erhöhung der Temperatur des Siliziumcarbid-Ausgangspulvers (40) das Anheben der Temperatur des Siliziumcarbid-Ausgangspulvers auf zwischen ca. 22500C und 23500C beinhaltet. ' .
7. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt des Anhebens der Temperatur des Impfkristalls (17, 32) das Anheben der Temperatur des Impfkristalls auf zwischen ca. 21500C und 2250°C beinhaltet.
8. Verfahren nach einem der vorstehenden Ansprüche, bei dem die Schritte des Anhebens der Temperatur des Siliziuracarbid-Ausgangspulvers (40) und des Anhebens der Temperatur der Aufwachsoberfläche des Impfkristalls (17, 32) die,Einführung eines Wärmegradienten von 20.0C pro Zentrimeter zwischen dem Ausgangspulver und dem Impfkristall beinhaltet.
9. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt des Einführens eines Impf-Einkristalls (17, 32) aus Siliziumcarbid das Einführen eines Impfkristalls beinhaltet, für den eine Fläche entsprechend einer niedrigen ganzzahligen Millerschen Indexfläche geschnitten worden ist, um eine Fläche freizulegen, die nicht senkrecht zu einer Achse senkrecht zur niedrigen ganzzahligen Millerschen Indexfläche
DE/EP 1 143493 T1
verläuft, die geschnitten wurde.
10. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt des Erzeugens und Aufrechterhaltens des im Wesentlichen konstanten Stroms dampfförmigen Si, Si2C und SiC2 pro Flächeneinheit und Zeiteinheit beinhaltet, ein Ausgangspulver (40) mit einer gewählten Polytypzusammensetzung einzuführen und die gewählte Polytypzusammensetzung im Ausgangspulver während des gesamten Wachstumsprozesses im Wesentlichen konstant zu halten.
11. Verfahren nach Anspruch 10, bei dem der Schritt der Einhaltung der ursprünglich gewählten Zusammensetzung aus PoIytypen im Ausgangspulver das Nachfüllen des Ausgangspulvers während des Sublimationsprozesses unter Verwendung eines Nachfüll-Ausgangspulvers mit einer Polytypzusammensetzung beinhaltet, die die ursprünglich gewählte Polytypzusammensetzung im Ausgangspulver im Sublimationssystem im Wesentlichen konstant hält.
12. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt des Erzeugens und Aufrechterhaltens des im Wesentlichen konstanten Stroms dampfförmigen Si, Si2C und SiC2 pro Flächeneinheit und Zeiteinheit beinhaltet, ein Ausgangspulver (40) mit einer gewählten vorgegebenen Verteilung von Oberflächenbereichen einzuführen und die gewählte Verteilung von Oberflächenbereichen im Ausgangspulver während des gesamten Wachstumsprozesses im Wesentlichen konstant, zu halten.
13. Verfahren nach Anspruch 12, bei dem der Schritt der Aufrechterhaltung der ursprünglich gewählten vorgegebenen Verteilung von Oberflächenbereichen das Nachfüllen des Ausgangspulvers (40) während des Sublimationsprozesses unter Verwendung eines Nachfüll-Ausgangspulvers mit einer Verteilung
• «
I··
DE/EP 1 143493 T1
von Oberflächenbereichen beinhaltet, die die ursprünglich gewählte Verteilung von Oberflächenbereichen im Ausgangspulver im Sublimationssystem im Wesentlichen konstant hält.
14. Verfahren nach einem der vorstehenden Ansprüche, bei dem der Schritt des Erzeugens und Aufrechterhaltens des im Wesentlichen konstanten Stroms dampfförmigen Si, Si2C und S1C2pro Flächeneinheit und Zeiteinheit beinhaltet, ein Ausgangspulver (40) mit einer gewählten vorgebenen Verteilung der Partikelgrößen einzuführen und die gewählte Verteilung der Partikelgrößen im Ausgangspulver während des gesamten Wachstumsprozesses im Wesentlichen konstant zu halten.
15. Verfahren nach Anspruch 14, bei dem der Schritt der Auf-rechterhaltung der "ursprünglich gewählten vorgegebenen Verteilung der Partikelgrößen das Nachfüllen des Ausgangspulvers (40) während des Sublimationsprozesses unter Verwendung eines Nachfüll-Ausgangspulvers mit einer Partikelgrößenverteilung beinhaltet, die die ursprünglich gewählte Verteilung der ■. Partikelgrößen im Ausgangspulver im Sublimationssystem im Wesentlichen konstant hält.
16. Verfahren nach Anspruch 13 oder 15, bei dem der Schritt des Nachfüllens des Ausgangspulvers (40) während des Sublimationsprozesses unter Verwendung eines Ausgangspulvers mit einer gewählten Verteilung der Partikelgrößen das Einführen von Siliziumcarbidpulver mit der folgenden Größenverteilung beinhaltet, bestimmt nach dem Gewichtsprozentsatz einer Probe, der ein bestimmtes Tyler-Maschensieb passiert:
Tyler-Maschensieb Gewichtsprozent, passiert 20 - 40 43%
40 - 60 19%
60 - 100 17%
über 100 21%
DE1143493T 1987-10-26 1988-10-26 Sublimationsanwachse von Siliziumkarbidkristallen Pending DE1143493T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/113,565 US4866005A (en) 1987-10-26 1987-10-26 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Publications (1)

Publication Number Publication Date
DE1143493T1 true DE1143493T1 (de) 2002-11-28

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ID=22350170

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3856514T Expired - Lifetime DE3856514T2 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von Siliziumkarbideinkristallen
DE3855539T Expired - Lifetime DE3855539T3 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von siliziumkarbideinkristallen
DE1143493T Pending DE1143493T1 (de) 1987-10-26 1988-10-26 Sublimationsanwachse von Siliziumkarbidkristallen

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE3856514T Expired - Lifetime DE3856514T2 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von Siliziumkarbideinkristallen
DE3855539T Expired - Lifetime DE3855539T3 (de) 1987-10-26 1988-10-26 Sublimationsanwachsen von siliziumkarbideinkristallen

Country Status (7)

Country Link
US (2) US4866005A (de)
EP (3) EP1143493A3 (de)
JP (2) JP3165685B2 (de)
KR (1) KR970008332B1 (de)
CA (1) CA1331730C (de)
DE (3) DE3856514T2 (de)
WO (1) WO1989004055A1 (de)

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US4866005A (en) 1989-09-12
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EP1143493A2 (de) 2001-10-10
EP0712150B1 (de) 2002-02-06
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