ATE202807T1 - Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen - Google Patents

Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen

Info

Publication number
ATE202807T1
ATE202807T1 AT97904246T AT97904246T ATE202807T1 AT E202807 T1 ATE202807 T1 AT E202807T1 AT 97904246 T AT97904246 T AT 97904246T AT 97904246 T AT97904246 T AT 97904246T AT E202807 T1 ATE202807 T1 AT E202807T1
Authority
AT
Austria
Prior art keywords
crucible
silicon carbide
stepped surface
bordered
furnace
Prior art date
Application number
AT97904246T
Other languages
English (en)
Inventor
Donovan L Barrett
Raymond G Seidensticker
Richard H Hopkins
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Application granted granted Critical
Publication of ATE202807T1 publication Critical patent/ATE202807T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT97904246T 1997-01-31 1997-01-31 Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen ATE202807T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1997/001864 WO1998033961A1 (en) 1997-01-31 1997-01-31 Apparatus for growing large silicon carbide single crystals

Publications (1)

Publication Number Publication Date
ATE202807T1 true ATE202807T1 (de) 2001-07-15

Family

ID=22260338

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97904246T ATE202807T1 (de) 1997-01-31 1997-01-31 Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen

Country Status (5)

Country Link
EP (1) EP0956381B1 (de)
JP (1) JP4052678B2 (de)
AT (1) ATE202807T1 (de)
DE (1) DE69705545T2 (de)
WO (1) WO1998033961A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4903946B2 (ja) 2000-12-28 2012-03-28 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
JP2012046424A (ja) * 2000-12-28 2012-03-08 Bridgestone Corp 炭化ケイ素単結晶
JP4480349B2 (ja) * 2003-05-30 2010-06-16 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
DE102009016132B4 (de) * 2009-04-03 2012-12-27 Sicrystal Ag Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AlN und langer Volumeneinkristall aus SiC oder AlN
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5440260B2 (ja) * 2010-03-02 2014-03-12 住友電気工業株式会社 炭化珪素結晶の製造方法およびその製造装置
KR101398048B1 (ko) 2012-01-16 2014-05-30 동의대학교 산학협력단 단결정 성장 장치
WO2015035145A1 (en) * 2013-09-06 2015-03-12 Gtat Corporation Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor
KR102163489B1 (ko) * 2013-12-05 2020-10-07 재단법인 포항산업과학연구원 탄화규소(SiC) 단결정 성장 장치
JP2017065934A (ja) * 2015-09-28 2017-04-06 住友電気工業株式会社 炭化珪素単結晶の製造方法
KR101908043B1 (ko) * 2016-12-23 2018-10-16 주식회사 포스코 대구경 단결정 성장장치
CN112694090B (zh) * 2020-12-18 2022-11-29 北京汇琨新材料有限公司 一种改进的碳化硅原料合成方法
CN113846382A (zh) * 2021-09-27 2021-12-28 哈尔滨科友半导体产业装备与技术研究院有限公司 一种适用于生长大厚度SiC单晶的装置及方法
CN114873570B (zh) * 2022-07-11 2022-09-27 山西中科潞安半导体技术研究院有限公司 一种采用pvt法提纯氮化铝粉末的方法及装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230727A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von siliziumkarbid
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH05330995A (ja) * 1992-06-04 1993-12-14 Sharp Corp 炭化珪素単結晶の製造方法及びその装置
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC

Also Published As

Publication number Publication date
EP0956381A1 (de) 1999-11-17
WO1998033961A1 (en) 1998-08-06
DE69705545T2 (de) 2001-10-25
DE69705545D1 (de) 2001-08-09
JP2001509769A (ja) 2001-07-24
EP0956381B1 (de) 2001-07-04
JP4052678B2 (ja) 2008-02-27

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Legal Events

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