SU882247A1 - Способ выращивания монокристаллического sic - Google Patents
Способ выращивания монокристаллического sicInfo
- Publication number
- SU882247A1 SU882247A1 SU2949811/26A SU2949811A SU882247A1 SU 882247 A1 SU882247 A1 SU 882247A1 SU 2949811/26 A SU2949811/26 A SU 2949811/26A SU 2949811 A SU2949811 A SU 2949811A SU 882247 A1 SU882247 A1 SU 882247A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- sic
- monocrystalline sic
- growing monocrystalline
- growing
- sublimation
- Prior art date
Links
Abstract
Способ выращивания монокристаллического SiC, включающий сублимацию источника SiC, размещенного в тигле, на подложку SiC при 1600 - 2000С, отличающийся тем, что, с целью снижения плотности дефектов типа пор, дислокаций и включений второй фазы и увеличения объема кристаллов, сублимацию ведут в присутствии Та, взятого в количестве ≥ 1% от веса источника.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2949811/26A SU882247A1 (ru) | 1980-07-02 | 1980-07-02 | Способ выращивания монокристаллического sic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2949811/26A SU882247A1 (ru) | 1980-07-02 | 1980-07-02 | Способ выращивания монокристаллического sic |
Publications (1)
Publication Number | Publication Date |
---|---|
SU882247A1 true SU882247A1 (ru) | 1996-11-20 |
Family
ID=60525418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU2949811/26A SU882247A1 (ru) | 1980-07-02 | 1980-07-02 | Способ выращивания монокристаллического sic |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU882247A1 (ru) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344085B2 (en) | 1998-07-14 | 2002-02-05 | Siemens Aktiengesellschaft | Device and method for producing at least one SiC single crystal |
US6537371B2 (en) | 1997-01-22 | 2003-03-25 | The Fox Group, Inc. | Niobium crucible fabrication and treatment |
US6547877B2 (en) | 1996-01-22 | 2003-04-15 | The Fox Group, Inc. | Tantalum crucible fabrication and treatment |
US6562131B2 (en) | 1999-07-20 | 2003-05-13 | The Fox Group, Inc. | Method for growing single crystal silicon carbide |
US6562130B2 (en) | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
US11046582B2 (en) * | 2019-11-11 | 2021-06-29 | Industrial Technology Research Institute | Method of purifying silicon carbide powder |
-
1980
- 1980-07-02 SU SU2949811/26A patent/SU882247A1/ru active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6547877B2 (en) | 1996-01-22 | 2003-04-15 | The Fox Group, Inc. | Tantalum crucible fabrication and treatment |
US6537371B2 (en) | 1997-01-22 | 2003-03-25 | The Fox Group, Inc. | Niobium crucible fabrication and treatment |
US6562130B2 (en) | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
US6344085B2 (en) | 1998-07-14 | 2002-02-05 | Siemens Aktiengesellschaft | Device and method for producing at least one SiC single crystal |
US6562131B2 (en) | 1999-07-20 | 2003-05-13 | The Fox Group, Inc. | Method for growing single crystal silicon carbide |
US11046582B2 (en) * | 2019-11-11 | 2021-06-29 | Industrial Technology Research Institute | Method of purifying silicon carbide powder |
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