ATE202601T1 - Vorrichtung zur zuchtung siliziumcarbid einkristallen - Google Patents
Vorrichtung zur zuchtung siliziumcarbid einkristallenInfo
- Publication number
- ATE202601T1 ATE202601T1 AT97950744T AT97950744T ATE202601T1 AT E202601 T1 ATE202601 T1 AT E202601T1 AT 97950744 T AT97950744 T AT 97950744T AT 97950744 T AT97950744 T AT 97950744T AT E202601 T1 ATE202601 T1 AT E202601T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon carbide
- single crystals
- carbide single
- growing silicon
- container
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/769,090 US5667587A (en) | 1996-12-18 | 1996-12-18 | Apparatus for growing silicon carbide crystals |
PCT/US1997/021882 WO1998027251A1 (en) | 1996-12-18 | 1997-11-20 | Apparatus for growing silicon carbide crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE202601T1 true ATE202601T1 (de) | 2001-07-15 |
Family
ID=25084431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97950744T ATE202601T1 (de) | 1996-12-18 | 1997-11-20 | Vorrichtung zur zuchtung siliziumcarbid einkristallen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5667587A (de) |
EP (1) | EP0948672B1 (de) |
JP (1) | JP2001506222A (de) |
AT (1) | ATE202601T1 (de) |
DE (1) | DE69705427T2 (de) |
WO (1) | WO1998027251A1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989340A (en) * | 1995-11-14 | 1999-11-23 | Siemens Aktiengesellschaft | Process and device for sublimation growing of silicon carbide monocrystals |
DE19917601A1 (de) | 1998-07-14 | 2000-01-20 | Siemens Ag | Vorrichtung und Verfahren zur Herstellung mindestens eines SiC-Einkristalls |
DE50001733D1 (de) * | 1999-07-07 | 2003-05-15 | Siemens Ag | Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel |
AU2001250835A1 (en) * | 2000-03-13 | 2001-09-24 | Ii-Vi Incorporated | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
EP1268882B1 (de) * | 2000-03-13 | 2011-05-11 | II-VI Incorporated | Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen |
US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
GB2393500B (en) * | 2003-01-29 | 2004-09-08 | Morgan Crucible Co | Induction furnaces and components |
JP4480349B2 (ja) * | 2003-05-30 | 2010-06-16 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造方法及び製造装置 |
US7608524B2 (en) * | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
US8858709B1 (en) | 2006-04-11 | 2014-10-14 | Ii-Vi Incorporated | Silicon carbide with low nitrogen content and method for preparation |
US8361227B2 (en) | 2006-09-26 | 2013-01-29 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
US7767022B1 (en) | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
EP2126163A2 (de) * | 2007-01-16 | 2009-12-02 | II-VI Incorporated | SiC-SUBLIMATIONSWACHSTUM MIT GEFÜHRTEM DURCHMESSER UND MEHRLAGIGIGEM WACHSTUMSFÜHRER |
KR100970319B1 (ko) * | 2007-07-24 | 2010-07-15 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 유리 모재 또는 광섬유 제조용 가열로 |
US20090053125A1 (en) * | 2007-08-20 | 2009-02-26 | Il-Vi Incorporated | Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals |
CN102245813B (zh) * | 2008-12-08 | 2014-08-06 | Ii-Vi有限公司 | 改进的轴向梯度传输(agt)生长工艺和利用电阻加热的装置 |
US10294584B2 (en) | 2009-03-26 | 2019-05-21 | Ii-Vi Incorporated | SiC single crystal sublimation growth method and apparatus |
US9322110B2 (en) | 2013-02-21 | 2016-04-26 | Ii-Vi Incorporated | Vanadium doped SiC single crystals and method thereof |
JP2015040146A (ja) * | 2013-08-22 | 2015-03-02 | 三菱電機株式会社 | 単結晶製造装置及びこれを用いた単結晶製造方法 |
US9580837B2 (en) | 2014-09-03 | 2017-02-28 | Ii-Vi Incorporated | Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material |
EP3353339A4 (de) | 2015-09-24 | 2019-05-08 | Melior Innovations Inc. | Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer |
EP4269667A4 (de) * | 2021-03-31 | 2024-05-29 | Sec Carbon Ltd | Vorrichtung zur züchtung von sic-einkristallen und verfahren zur züchtung von sic-einkristallen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL133589C (de) * | 1966-09-15 | 1900-01-01 | ||
GB1242051A (en) * | 1967-05-08 | 1971-08-11 | Nat Res Dev | Improvements in the manufacture of silicon carbide |
JP2553633B2 (ja) * | 1988-05-19 | 1996-11-13 | 住友電気工業株式会社 | 高温炉の断熱方法 |
JPH0637354B2 (ja) * | 1990-04-16 | 1994-05-18 | 新日本製鐵株式会社 | 炭化珪素単結晶成長方法および装置 |
US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
US5863325A (en) * | 1995-05-31 | 1999-01-26 | Bridgestone Corporation | Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal |
US5683507A (en) * | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
-
1996
- 1996-12-18 US US08/769,090 patent/US5667587A/en not_active Expired - Lifetime
-
1997
- 1997-11-20 JP JP52773798A patent/JP2001506222A/ja not_active Ceased
- 1997-11-20 EP EP97950744A patent/EP0948672B1/de not_active Expired - Lifetime
- 1997-11-20 AT AT97950744T patent/ATE202601T1/de not_active IP Right Cessation
- 1997-11-20 DE DE69705427T patent/DE69705427T2/de not_active Expired - Lifetime
- 1997-11-20 WO PCT/US1997/021882 patent/WO1998027251A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE69705427D1 (de) | 2001-08-02 |
EP0948672A1 (de) | 1999-10-13 |
US5667587A (en) | 1997-09-16 |
EP0948672B1 (de) | 2001-06-27 |
JP2001506222A (ja) | 2001-05-15 |
DE69705427T2 (de) | 2001-10-18 |
WO1998027251A1 (en) | 1998-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |