ATE202601T1 - Vorrichtung zur zuchtung siliziumcarbid einkristallen - Google Patents

Vorrichtung zur zuchtung siliziumcarbid einkristallen

Info

Publication number
ATE202601T1
ATE202601T1 AT97950744T AT97950744T ATE202601T1 AT E202601 T1 ATE202601 T1 AT E202601T1 AT 97950744 T AT97950744 T AT 97950744T AT 97950744 T AT97950744 T AT 97950744T AT E202601 T1 ATE202601 T1 AT E202601T1
Authority
AT
Austria
Prior art keywords
silicon carbide
single crystals
carbide single
growing silicon
container
Prior art date
Application number
AT97950744T
Other languages
English (en)
Inventor
Robert C Glass
Walter E Gaida
Ronald R Ronallo
Hudson Mcdonald Hobgood
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Application granted granted Critical
Publication of ATE202601T1 publication Critical patent/ATE202601T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
AT97950744T 1996-12-18 1997-11-20 Vorrichtung zur zuchtung siliziumcarbid einkristallen ATE202601T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/769,090 US5667587A (en) 1996-12-18 1996-12-18 Apparatus for growing silicon carbide crystals
PCT/US1997/021882 WO1998027251A1 (en) 1996-12-18 1997-11-20 Apparatus for growing silicon carbide crystals

Publications (1)

Publication Number Publication Date
ATE202601T1 true ATE202601T1 (de) 2001-07-15

Family

ID=25084431

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97950744T ATE202601T1 (de) 1996-12-18 1997-11-20 Vorrichtung zur zuchtung siliziumcarbid einkristallen

Country Status (6)

Country Link
US (1) US5667587A (de)
EP (1) EP0948672B1 (de)
JP (1) JP2001506222A (de)
AT (1) ATE202601T1 (de)
DE (1) DE69705427T2 (de)
WO (1) WO1998027251A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
DE19917601A1 (de) * 1998-07-14 2000-01-20 Siemens Ag Vorrichtung und Verfahren zur Herstellung mindestens eines SiC-Einkristalls
WO2001004389A1 (de) * 1999-07-07 2001-01-18 Siemens Aktiengesellschaft Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel
JP5179690B2 (ja) * 2000-03-13 2013-04-10 トゥー‐シックス・インコーポレイテッド 炭化ケイ素の大型単結晶を作るための軸芯勾配輸送装置及び方法
JP2003527298A (ja) * 2000-03-13 2003-09-16 トゥー‐シックス・インコーポレイテッド タイル張りされた種結晶の相互成長による大型単結晶種結晶の作製
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
GB2393500B (en) * 2003-01-29 2004-09-08 Morgan Crucible Co Induction furnaces and components
JP4480349B2 (ja) * 2003-05-30 2010-06-16 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
US8858709B1 (en) 2006-04-11 2014-10-14 Ii-Vi Incorporated Silicon carbide with low nitrogen content and method for preparation
US8361227B2 (en) * 2006-09-26 2013-01-29 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
US7767022B1 (en) 2006-04-19 2010-08-03 Ii-Vi Incorporated Method of annealing a sublimation grown crystal
WO2008089181A2 (en) * 2007-01-16 2008-07-24 Ii-Vi Incorporated Guided diameter sic sublimation growth with multi-layer growth guide
KR100970319B1 (ko) * 2007-07-24 2010-07-15 신에쓰 가가꾸 고교 가부시끼가이샤 유리 모재 또는 광섬유 제조용 가열로
WO2009026269A1 (en) * 2007-08-20 2009-02-26 Ii-Vi Incorporated Stabilizing 4h polytype during sublimation growth of sic single crystals
DE112009003667B4 (de) * 2008-12-08 2024-04-25 Ii-Vi Inc. Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
US10294584B2 (en) 2009-03-26 2019-05-21 Ii-Vi Incorporated SiC single crystal sublimation growth method and apparatus
US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
JP2015040146A (ja) * 2013-08-22 2015-03-02 三菱電機株式会社 単結晶製造装置及びこれを用いた単結晶製造方法
US9580837B2 (en) 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
CN108463580B (zh) 2015-09-24 2021-11-12 帕里杜斯有限公司 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术
US20240068125A1 (en) * 2021-03-31 2024-02-29 Sec Carbon, Ltd. Sic single-crystal growth apparatus and method of growing sic crystal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133589C (de) * 1966-09-15 1900-01-01
GB1242051A (en) * 1967-05-08 1971-08-11 Nat Res Dev Improvements in the manufacture of silicon carbide
JP2553633B2 (ja) * 1988-05-19 1996-11-13 住友電気工業株式会社 高温炉の断熱方法
JPH0637354B2 (ja) * 1990-04-16 1994-05-18 新日本製鐵株式会社 炭化珪素単結晶成長方法および装置
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
US5863325A (en) * 1995-05-31 1999-01-26 Bridgestone Corporation Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals

Also Published As

Publication number Publication date
DE69705427D1 (de) 2001-08-02
EP0948672A1 (de) 1999-10-13
WO1998027251A1 (en) 1998-06-25
DE69705427T2 (de) 2001-10-18
EP0948672B1 (de) 2001-06-27
US5667587A (en) 1997-09-16
JP2001506222A (ja) 2001-05-15

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