ATE426694T1 - Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid - Google Patents
Verfahren zur herstellung von grosseneinkristallen von aluminiumnitridInfo
- Publication number
- ATE426694T1 ATE426694T1 AT03808366T AT03808366T ATE426694T1 AT E426694 T1 ATE426694 T1 AT E426694T1 AT 03808366 T AT03808366 T AT 03808366T AT 03808366 T AT03808366 T AT 03808366T AT E426694 T1 ATE426694 T1 AT E426694T1
- Authority
- AT
- Austria
- Prior art keywords
- crystal growth
- growth enclosure
- single crystals
- nucleation site
- aluminum nitride
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/324,998 US6770135B2 (en) | 2001-12-24 | 2002-12-20 | Method and apparatus for producing large, single-crystals of aluminum nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE426694T1 true ATE426694T1 (de) | 2009-04-15 |
Family
ID=32710778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03808366T ATE426694T1 (de) | 2002-12-20 | 2003-05-07 | Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid |
Country Status (8)
Country | Link |
---|---|
US (1) | US6770135B2 (de) |
EP (1) | EP1587971B1 (de) |
JP (1) | JP2006511432A (de) |
AT (1) | ATE426694T1 (de) |
AU (1) | AU2003303485A1 (de) |
CA (1) | CA2508883A1 (de) |
DE (1) | DE60326884D1 (de) |
WO (1) | WO2004061896A2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US7042020B2 (en) * | 2003-02-14 | 2006-05-09 | Cree, Inc. | Light emitting device incorporating a luminescent material |
US7361220B2 (en) * | 2003-03-26 | 2008-04-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
DE10335538A1 (de) * | 2003-07-31 | 2005-02-24 | Sicrystal Ag | Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand |
WO2005103341A1 (ja) * | 2004-04-27 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Iii族元素窒化物結晶製造装置およびiii族元素窒化物結晶製造方法 |
US7294199B2 (en) * | 2004-06-10 | 2007-11-13 | Sumitomo Electric Industries, Ltd. | Nitride single crystal and producing method thereof |
EP1612300B1 (de) * | 2004-06-30 | 2010-05-26 | Sumitomo Electric Industries, Ltd. | Verfahren zur Herstellung eines AlN-Einkristalles |
CN100447310C (zh) * | 2004-07-15 | 2008-12-31 | 住友电气工业株式会社 | 氮化物单晶和其生产方法 |
JP4522898B2 (ja) * | 2005-03-25 | 2010-08-11 | 日本碍子株式会社 | 単結晶製造装置 |
JP2006290677A (ja) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法 |
JP2009517329A (ja) * | 2005-11-28 | 2009-04-30 | クリスタル・イズ,インコーポレイテッド | 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法 |
WO2007065018A2 (en) * | 2005-12-02 | 2007-06-07 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
JP2007273946A (ja) * | 2006-03-10 | 2007-10-18 | Covalent Materials Corp | 窒化物半導体単結晶膜 |
WO2007122949A1 (ja) * | 2006-03-23 | 2007-11-01 | Ngk Insulators, Ltd. | 窒化物単結晶の製造装置 |
EP2007933B1 (de) | 2006-03-30 | 2017-05-10 | Crystal Is, Inc. | Verfahren zur gesteuerten dotierung von aluminiumnitrid-massenkristallen |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
EE05028B1 (et) * | 2006-03-31 | 2008-06-16 | O� Krimelte | Ksiaplikaatori kinnitus |
JP4936310B2 (ja) * | 2006-04-07 | 2012-05-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造装置 |
US7524376B2 (en) * | 2006-05-04 | 2009-04-28 | Fairfield Crystal Technology, Llc | Method and apparatus for aluminum nitride monocrystal boule growth |
WO2008088838A1 (en) * | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US9437430B2 (en) | 2007-01-26 | 2016-09-06 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
DE102007006731B4 (de) * | 2007-02-06 | 2011-07-28 | Forschungsverbund Berlin e.V., 12489 | Verfahren und Vorrichtung zur Herstellung von Zinkoxid-Einkristallen aus einer Schmelze |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
JP2009137777A (ja) | 2007-12-04 | 2009-06-25 | Sumitomo Electric Ind Ltd | AlN結晶およびその成長方法 |
FR2929959B1 (fr) * | 2008-04-10 | 2010-08-27 | Commissariat Energie Atomique | Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature |
JP5418210B2 (ja) * | 2009-01-16 | 2014-02-19 | 住友電気工業株式会社 | 窒化物半導体結晶の製造方法、AlN結晶および窒化物半導体結晶の製造装置 |
JP5418236B2 (ja) | 2009-01-23 | 2014-02-19 | 住友電気工業株式会社 | 窒化物半導体結晶の製造装置、窒化物半導体結晶の製造方法および窒化アルミニウム結晶 |
RU2485219C1 (ru) * | 2009-04-24 | 2013-06-20 | Нэшнл Инститьют Оф Эдванст Индастриал Сайенс Энд Текнолоджи | Устройство для производства монокристаллического нитрида алюминия, способ производства монокристаллического нитрида алюминия и монокристаллический нитрид алюминия |
CN105951177B (zh) | 2010-06-30 | 2018-11-02 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
US20130000552A1 (en) * | 2011-06-28 | 2013-01-03 | Nitride Solutions Inc. | Device and method for producing bulk single crystals |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
CN103668077B (zh) * | 2012-09-14 | 2017-08-29 | 深圳富泰宏精密工业有限公司 | 蒸发装置及应用该蒸发装置的真空蒸镀机 |
WO2014151264A1 (en) | 2013-03-15 | 2014-09-25 | Crystal Is, Inc. | Planar contacts to pseudomorphic electronic and optoelectronic devices |
JP7117243B2 (ja) * | 2016-09-14 | 2022-08-12 | スタンレー電気株式会社 | Iii族窒化物積層体、及び該積層体を有する半導体デバイス |
WO2018232080A1 (en) * | 2017-06-16 | 2018-12-20 | Crystal Is. Inc. | Two-stage seeded growth of large aluminum nitride single crystals |
CN107740181A (zh) * | 2017-10-30 | 2018-02-27 | 中国电子科技集团公司第四十六研究所 | 一种添加辅助气氛的氮化铝pvt生长方法 |
US10954608B2 (en) | 2017-11-10 | 2021-03-23 | Crystal Is, Inc. | UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm |
CN108275664B (zh) * | 2017-12-29 | 2021-12-07 | 奥趋光电技术(杭州)有限公司 | 一种用于氮化铝的高温烧结提纯方法 |
WO2019246027A1 (en) | 2018-06-19 | 2019-12-26 | Crystal Is, Inc. | Deep-uv-transparent aluminum nitride crystals and methods of forming them |
US20210047751A1 (en) * | 2019-08-15 | 2021-02-18 | Robert T. Bondokov | Aluminum nitride single crystals having large crystal augmentation parameters |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0859386A (ja) * | 1994-08-22 | 1996-03-05 | Mitsubishi Materials Corp | 半導体単結晶育成装置 |
JP3876473B2 (ja) * | 1996-06-04 | 2007-01-31 | 住友電気工業株式会社 | 窒化物単結晶及びその製造方法 |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
EP0979883A4 (de) * | 1997-12-25 | 2003-10-15 | Japan Energy Corp | Verfahren und vorrichtung zur herstellung von einkristallen von verbundhalbleitern und einkristalle von verbundhalbleitern |
US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US6063185A (en) | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
RU2158789C1 (ru) * | 1999-08-04 | 2000-11-10 | Водаков Юрий Александрович | Способ эпитаксиального выращивания монокристаллического нитрида алюминия и ростовая камера для осуществления способа |
-
2002
- 2002-12-20 US US10/324,998 patent/US6770135B2/en not_active Expired - Lifetime
-
2003
- 2003-05-07 AT AT03808366T patent/ATE426694T1/de not_active IP Right Cessation
- 2003-05-07 EP EP03808366A patent/EP1587971B1/de not_active Expired - Lifetime
- 2003-05-07 AU AU2003303485A patent/AU2003303485A1/en not_active Abandoned
- 2003-05-07 CA CA002508883A patent/CA2508883A1/en not_active Abandoned
- 2003-05-07 WO PCT/US2003/014579 patent/WO2004061896A2/en active Application Filing
- 2003-05-07 DE DE60326884T patent/DE60326884D1/de not_active Expired - Lifetime
- 2003-05-07 JP JP2004564648A patent/JP2006511432A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1587971B1 (de) | 2009-03-25 |
AU2003303485A2 (en) | 2004-07-29 |
WO2004061896A2 (en) | 2004-07-22 |
EP1587971A4 (de) | 2006-02-01 |
DE60326884D1 (de) | 2009-05-07 |
US6770135B2 (en) | 2004-08-03 |
CA2508883A1 (en) | 2004-07-22 |
EP1587971A2 (de) | 2005-10-26 |
WO2004061896A3 (en) | 2004-09-10 |
JP2006511432A (ja) | 2006-04-06 |
AU2003303485A1 (en) | 2004-07-29 |
US20030168003A1 (en) | 2003-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |