CN103668077B - 蒸发装置及应用该蒸发装置的真空蒸镀机 - Google Patents
蒸发装置及应用该蒸发装置的真空蒸镀机 Download PDFInfo
- Publication number
- CN103668077B CN103668077B CN201210339847.3A CN201210339847A CN103668077B CN 103668077 B CN103668077 B CN 103668077B CN 201210339847 A CN201210339847 A CN 201210339847A CN 103668077 B CN103668077 B CN 103668077B
- Authority
- CN
- China
- Prior art keywords
- gas
- evaporation
- side wall
- vaporising device
- bottom wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
蒸发装置 | 100 |
蒸发舟 | 10 |
第一底壁 | 12 |
第一侧壁 | 14 |
第二侧壁 | 16 |
容置槽 | 18 |
通气孔 | 142 |
加热部 | 19 |
导气装置 | 30 |
气体容置空间 | 31 |
第二底壁 | 32 |
第三侧壁 | 34 |
第四侧壁 | 36 |
卡槽 | 362 |
凹槽 | 38 |
气源通道 | 50 |
反应气体通道 | 52 |
工作气体通道 | 54 |
真空蒸镀机 | 200、300 |
蒸镀腔 | 210 |
真空泵 | 230 |
支承架 | 212 |
蒸镀室 | 310 |
真空泵 | 330 |
蒸发装置 | 311 |
支承架 | 313 |
气源通道 | 315 |
蒸发料 | 350、360 |
待镀膜工件 | 400、600 |
底面 | 410、610 |
周壁 | 430、630 |
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210339847.3A CN103668077B (zh) | 2012-09-14 | 2012-09-14 | 蒸发装置及应用该蒸发装置的真空蒸镀机 |
TW101134857A TWI539021B (zh) | 2012-09-14 | 2012-09-21 | 蒸發裝置及應用該蒸發裝置的真空蒸鍍機 |
US13/939,535 US9416437B2 (en) | 2012-09-14 | 2013-07-11 | Evaporating device and vaccum evaporation device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210339847.3A CN103668077B (zh) | 2012-09-14 | 2012-09-14 | 蒸发装置及应用该蒸发装置的真空蒸镀机 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103668077A CN103668077A (zh) | 2014-03-26 |
CN103668077B true CN103668077B (zh) | 2017-08-29 |
Family
ID=50273134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210339847.3A Active CN103668077B (zh) | 2012-09-14 | 2012-09-14 | 蒸发装置及应用该蒸发装置的真空蒸镀机 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9416437B2 (zh) |
CN (1) | CN103668077B (zh) |
TW (1) | TWI539021B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101906610A (zh) * | 2009-06-03 | 2010-12-08 | 鸿富锦精密工业(深圳)有限公司 | 坩埚及真空蒸镀系统 |
CN104620354A (zh) * | 2012-06-27 | 2015-05-13 | 新意技术股份有限公司 | 基板加热装置及处理腔室 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
US6770135B2 (en) * | 2001-12-24 | 2004-08-03 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
JP5179739B2 (ja) * | 2006-09-27 | 2013-04-10 | 東京エレクトロン株式会社 | 蒸着装置、蒸着装置の制御装置、蒸着装置の制御方法および蒸着装置の使用方法 |
US20120052617A1 (en) * | 2010-12-20 | 2012-03-01 | General Electric Company | Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate |
-
2012
- 2012-09-14 CN CN201210339847.3A patent/CN103668077B/zh active Active
- 2012-09-21 TW TW101134857A patent/TWI539021B/zh not_active IP Right Cessation
-
2013
- 2013-07-11 US US13/939,535 patent/US9416437B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101906610A (zh) * | 2009-06-03 | 2010-12-08 | 鸿富锦精密工业(深圳)有限公司 | 坩埚及真空蒸镀系统 |
CN104620354A (zh) * | 2012-06-27 | 2015-05-13 | 新意技术股份有限公司 | 基板加热装置及处理腔室 |
Also Published As
Publication number | Publication date |
---|---|
TW201410896A (zh) | 2014-03-16 |
US9416437B2 (en) | 2016-08-16 |
US20140076235A1 (en) | 2014-03-20 |
CN103668077A (zh) | 2014-03-26 |
TWI539021B (zh) | 2016-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107109624B (zh) | 材料沉积布置、真空沉积系统和沉积材料的方法 | |
US8137470B2 (en) | Inner plate and crucible assembly for deposition having the same | |
CN102102176B (zh) | 蒸发源和具有该蒸发源的沉积设备 | |
CN203768445U (zh) | 真空蒸镀装置 | |
JP2009149989A (ja) | 薄膜蒸着装置および薄膜蒸着方法 | |
JP2018501405A5 (zh) | ||
WO2023093455A1 (zh) | 一种进气分配机构及具有其的 cvd 反应设备 | |
US9435022B2 (en) | Deposition source | |
CN204080101U (zh) | 抽气环及沉积设备 | |
CN111655898A (zh) | 用于蒸发源材料的蒸发器、材料沉积源、沉积装置及其方法 | |
CN103668077B (zh) | 蒸发装置及应用该蒸发装置的真空蒸镀机 | |
CN102168250A (zh) | 蒸发源装置 | |
CN116377421B (zh) | 具有微流道的固态前驱体输送装置及输送方法 | |
KR20100108086A (ko) | 증발 장치 및 이를 구비하는 진공 증착 장치 | |
JP7556128B2 (ja) | 原料気化装置、コーティング装置、コーティング機器及びその材料投入方法 | |
CN116334531A (zh) | 一种pvd工艺腔体及其应用 | |
CN101906610B (zh) | 坩埚及真空蒸镀系统 | |
KR100994454B1 (ko) | 증발 장치 및 이를 구비하는 진공 증착 장치 | |
CN221596401U (zh) | 舟片、舟结构以及反应炉 | |
CN100369201C (zh) | 一种高密度等离子体化学气相沉淀装置 | |
KR20140103583A (ko) | 선형증발원 | |
KR100352462B1 (ko) | 반도체 제조 장비 | |
KR101130045B1 (ko) | 가스분사장치 및 이를 구비하는 박막증착장치 | |
US20200181759A1 (en) | Vapor deposition crucible | |
CN102168249A (zh) | 蒸发源装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191220 Address after: 314200, No. two, 1661 Xingping Road, Pinghu Economic Development Zone, Zhejiang, Jiaxing Patentee after: NASHI NEW MATERIAL (ZHEJIANG) Co.,Ltd. Address before: 518109 F3 building, Foxconn science and Technology Industrial Park, Longhua Town, Shenzhen, Guangdong, A, China Patentee before: Shenzhen Futaihong Precision Industry Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 314200, No. two, 1661 Xingping Road, Pinghu Economic Development Zone, Zhejiang, Jiaxing Patentee after: Nashi new materials Co.,Ltd. Address before: 314200, No. two, 1661 Xingping Road, Pinghu Economic Development Zone, Zhejiang, Jiaxing Patentee before: NASHI NEW MATERIAL (ZHEJIANG) Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: 314200 No. two, No. 1661, Pinghu Economic Development Zone, Jiaxing, Zhejiang, Xingping Patentee after: NAXAU NEW MATERIALS Corp. Country or region after: China Address before: No. 1661, Xingping Second Road, Pinghu Economic Development Zone, Jiaxing City, Zhejiang Province Patentee before: Nashi new materials Co.,Ltd. Country or region before: China |
|
CP03 | Change of name, title or address |