KR100352462B1 - 반도체 제조 장비 - Google Patents
반도체 제조 장비 Download PDFInfo
- Publication number
- KR100352462B1 KR100352462B1 KR1020000051666A KR20000051666A KR100352462B1 KR 100352462 B1 KR100352462 B1 KR 100352462B1 KR 1020000051666 A KR1020000051666 A KR 1020000051666A KR 20000051666 A KR20000051666 A KR 20000051666A KR 100352462 B1 KR100352462 B1 KR 100352462B1
- Authority
- KR
- South Korea
- Prior art keywords
- boat
- plates
- space
- insertion hole
- substrates
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
Description
Claims (3)
- 히팅부(21)를 구비한 다수의 외벽으로 제공되는 공간부(2)를 갖는 몸체(3)와;몸체(3)의 상,하부에 고정된 상,하부 플레이트(4)(5)와;중앙에 제 2삽입공(25)을 형성한 직사각형의 박판(26)을 수직으로 2개 이상 구비하되, 박판(26)과 박판(26)의 사이에 소정 간격(L)을 갖도록 하고, 상기 공간부(2)의 내측벽에 삽입하여 고정함으로써 몸체(3)의 내측벽과 박판(26)과 박판(26) 사이가 제공하는 일측의 공간이 급기덕트(9a)가 되도록 하고, 이와 대향되는 타측의 공간이 배기덕트(9a)가 되도록 구비된 급배기부(10)와;상, 하부 디스크 플레이트(28)(29) 사이로 다수의 기판(27)을 박판(26) 간격과 동일하거나 정배수로 고정하는 복수개의 지지대(30)(31)를 일체로 갖도록 구비된 보트(20)와;하부 플레이트(5)의 제 1삽입공(24)과 급배기부(10)의 박판(26) 중앙에 형성된 제 2삽입공(25)을 통해 상기 보트(20)를 삽입하거나 인출시키도록 보트(20)의 밑면에 설치된 인출부(11)로 이루어진 것을 특징으로 하는 반도체 제조장비.
- 제 1항에 있어서, 상기 지지대(30)(31)는 수직으로 피치(P)를 갖는 다수개의 요철부(32)와 요홈부(33)를 구비하여 다수의 기판(27)을 고정하도록 구성된 것을 특징으로 하는 반도체 제조장비.
- 제 2항에 있어서, 상기 지지대(30)(31)의 요철부(32)와 요홈부(33) 사이에 LCD를 고정하여 증착시킬 수 있도록 구성된 것을 특징으로 하는 반도체 제조장비.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000051666A KR100352462B1 (ko) | 2000-09-01 | 2000-09-01 | 반도체 제조 장비 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000051666A KR100352462B1 (ko) | 2000-09-01 | 2000-09-01 | 반도체 제조 장비 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000072401A KR20000072401A (ko) | 2000-12-05 |
KR100352462B1 true KR100352462B1 (ko) | 2002-09-11 |
Family
ID=19686851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000051666A KR100352462B1 (ko) | 2000-09-01 | 2000-09-01 | 반도체 제조 장비 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100352462B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100790723B1 (ko) * | 2003-12-11 | 2007-12-31 | 동부일렉트로닉스 주식회사 | 반도체 장비용 진공 트랩 |
-
2000
- 2000-09-01 KR KR1020000051666A patent/KR100352462B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20000072401A (ko) | 2000-12-05 |
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