ATE335871T1 - Verfahren und vorrichtung zur züchtung von mehreren kristallbändern aus einem einzelnen tiegel - Google Patents

Verfahren und vorrichtung zur züchtung von mehreren kristallbändern aus einem einzelnen tiegel

Info

Publication number
ATE335871T1
ATE335871T1 AT03779382T AT03779382T ATE335871T1 AT E335871 T1 ATE335871 T1 AT E335871T1 AT 03779382 T AT03779382 T AT 03779382T AT 03779382 T AT03779382 T AT 03779382T AT E335871 T1 ATE335871 T1 AT E335871T1
Authority
AT
Austria
Prior art keywords
cruct
several crystal
ribbons
growing several
crystal ribbons
Prior art date
Application number
AT03779382T
Other languages
English (en)
Inventor
Richard Lee Wallace
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Application granted granted Critical
Publication of ATE335871T1 publication Critical patent/ATE335871T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
AT03779382T 2002-10-30 2003-10-28 Verfahren und vorrichtung zur züchtung von mehreren kristallbändern aus einem einzelnen tiegel ATE335871T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/284,067 US6814802B2 (en) 2002-10-30 2002-10-30 Method and apparatus for growing multiple crystalline ribbons from a single crucible

Publications (1)

Publication Number Publication Date
ATE335871T1 true ATE335871T1 (de) 2006-09-15

Family

ID=32174798

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03779382T ATE335871T1 (de) 2002-10-30 2003-10-28 Verfahren und vorrichtung zur züchtung von mehreren kristallbändern aus einem einzelnen tiegel

Country Status (8)

Country Link
US (3) US6814802B2 (de)
EP (1) EP1558795B1 (de)
JP (1) JP2006504613A (de)
AT (1) ATE335871T1 (de)
AU (1) AU2003285067A1 (de)
DE (1) DE60307497T2 (de)
ES (1) ES2270132T3 (de)
WO (1) WO2004042122A1 (de)

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ATE373119T1 (de) * 2002-10-18 2007-09-15 Evergreen Solar Inc Verfahren und vorrichtung zur kristallzüchtung
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
FR2884834B1 (fr) * 2005-04-22 2007-06-08 Solarforce Soc Par Actions Sim Procede de tirage de rubans de semi-conducteur de faible epaisseur
US7820022B2 (en) * 2005-11-28 2010-10-26 General Electric Company Photoelectrochemical cell and method of manufacture
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
CA2661324A1 (en) * 2006-10-27 2008-05-08 Evergreen Solar, Inc. Method and apparatus for forming a silicon wafer
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling
WO2008157313A1 (en) * 2007-06-14 2008-12-24 Evergreen Solar, Inc. Ribbon crystal pulling furnace afterheater with at least one opening
CA2697403A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon crystal string for increasing wafer yield
US8304057B2 (en) * 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
ES2425885T3 (es) * 2008-08-18 2013-10-17 Max Era, Inc. Procedimiento y aparato para el desarrollo de una cinta cristalina mientras se controla el transporte de contaminantes en suspensión en un gas a través de una superficie de cinta
US20110247549A1 (en) 2009-03-09 2011-10-13 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material
US20110079271A1 (en) * 2009-10-01 2011-04-07 Sergiy Dets Spectrum-splitting and wavelength-shifting photovoltaic energy converting system suitable for direct and diffuse solar irradiation
WO2011156648A1 (en) 2010-06-09 2011-12-15 President And Fellows Of Harvard College Method for producing films
WO2012044909A1 (en) 2010-10-01 2012-04-05 Evergreen Solar, Inc. Sheet wafer defect mitigation
KR20130110177A (ko) 2010-10-01 2013-10-08 에버그린 솔라, 인크. 웨이퍼 중량의 함수로서의 시트 웨이퍼 처리
US20120125254A1 (en) * 2010-11-23 2012-05-24 Evergreen Solar, Inc. Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US20130047913A1 (en) * 2011-08-29 2013-02-28 Max Era, Inc. Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace

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Also Published As

Publication number Publication date
ES2270132T3 (es) 2007-04-01
US7507291B2 (en) 2009-03-24
US6814802B2 (en) 2004-11-09
US20040083946A1 (en) 2004-05-06
US7022180B2 (en) 2006-04-04
US20050051080A1 (en) 2005-03-10
US20060191470A1 (en) 2006-08-31
JP2006504613A (ja) 2006-02-09
AU2003285067A1 (en) 2004-06-07
EP1558795B1 (de) 2006-08-09
DE60307497D1 (de) 2006-09-21
EP1558795A1 (de) 2005-08-03
DE60307497T2 (de) 2006-12-14
WO2004042122A1 (en) 2004-05-21

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