DE69518490D1 - Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung - Google Patents

Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung

Info

Publication number
DE69518490D1
DE69518490D1 DE69518490T DE69518490T DE69518490D1 DE 69518490 D1 DE69518490 D1 DE 69518490D1 DE 69518490 T DE69518490 T DE 69518490T DE 69518490 T DE69518490 T DE 69518490T DE 69518490 D1 DE69518490 D1 DE 69518490D1
Authority
DE
Germany
Prior art keywords
post
single crystal
crystal growth
silicon granules
czochralski single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69518490T
Other languages
English (en)
Other versions
DE69518490T2 (de
Inventor
Naoki Nagai
Michiaki Oda
Seiichiro Ohtsuka
Isamu Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69518490D1 publication Critical patent/DE69518490D1/de
Publication of DE69518490T2 publication Critical patent/DE69518490T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
DE69518490T 1994-11-21 1995-11-10 Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung Expired - Fee Related DE69518490T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6286246A JP2935337B2 (ja) 1994-11-21 1994-11-21 粒状原料の供給装置およびその供給方法

Publications (2)

Publication Number Publication Date
DE69518490D1 true DE69518490D1 (de) 2000-09-28
DE69518490T2 DE69518490T2 (de) 2001-04-19

Family

ID=17701883

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518490T Expired - Fee Related DE69518490T2 (de) 1994-11-21 1995-11-10 Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung

Country Status (5)

Country Link
US (2) US5690733A (de)
EP (1) EP0712945B1 (de)
JP (1) JP2935337B2 (de)
KR (1) KR960017934A (de)
DE (1) DE69518490T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW503265B (en) * 1995-12-28 2002-09-21 Mitsubishi Material Silicon Single crystal pulling apparatus
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
JP3475649B2 (ja) * 1996-03-18 2003-12-08 信越半導体株式会社 シリコン単結晶の製造方法
JP3555309B2 (ja) * 1996-02-27 2004-08-18 信越半導体株式会社 粒状物の自動計量供給装置
EP0856599A3 (de) * 1997-01-31 2000-03-22 Komatsu Electronic Metals Co., Ltd Vorrichtung zur Zuführung von Rohmaterial in einen Quarztiegel und ein Verfahren zur Zuführung des Rohmaterials
US6007621A (en) * 1997-01-31 1999-12-28 Komatsu Elctronic Metals Co., Ltd. Apparatus for feeding raw material into a quartz crucible and method of feeding the same
JPH11106291A (ja) * 1997-10-03 1999-04-20 Komatsu Electron Metals Co Ltd 石英るつぼへの原料装填装置及び原料装填方法
US6013088A (en) * 1998-11-17 2000-01-11 Karavidas; Theocharis Surgical clamp with removable tips
WO2001063023A1 (fr) * 2000-02-22 2001-08-30 Shin-Etsu Handotai Co.,Ltd. Procede permettant de faire pousser des monocristaux de semi-conducteur
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP2004083322A (ja) * 2002-08-26 2004-03-18 Sumitomo Mitsubishi Silicon Corp Ｃｚ原料供給方法及び供給治具
JP4148049B2 (ja) * 2003-07-15 2008-09-10 株式会社Ｓｕｍｃｏ 原料供給装置
CN1333115C (zh) * 2004-05-11 2007-08-22 上海卡姆丹克半导体有限公司 一种拉制硅单晶工艺方法
JP4785764B2 (ja) * 2007-02-06 2011-10-05 コバレントマテリアル株式会社 単結晶の製造方法
JP5262257B2 (ja) * 2008-04-10 2013-08-14 株式会社Ｓｕｍｃｏ 窒素ドープシリコン単結晶の製造方法
JP2009263178A (ja) 2008-04-25 2009-11-12 Sumco Corp 単結晶育成装置および原料供給方法
CN101638232B (zh) * 2008-08-19 2012-04-18 储晞 生产高纯硅坯料的方法和装置
KR101216521B1 (ko) * 2012-03-20 2012-12-31 유호정 피드유닛을 구비하는 실리콘 잉곳 성장 장치
KR101216523B1 (ko) * 2012-03-20 2012-12-31 유호정 멀티-도가니 타입 실리콘 잉곳 성장 장치
JP5857945B2 (ja) * 2012-11-20 2016-02-10 信越半導体株式会社 原料充填方法および単結晶の製造方法
KR102512340B1 (ko) 2015-08-20 2023-03-20 썬에디슨 세미컨덕터 리미티드 결정 성장 챔버에서 청크 폴리실리콘 또는 입상 폴리실리콘을 선택적으로 피딩하기 위한 시스템들
KR101712744B1 (ko) * 2015-10-22 2017-03-06 (주)에프아이에스 공용포트를 구비하는 잉곳 성장 장치
US10968533B2 (en) 2016-02-25 2021-04-06 Corner Star Limited Feed system for crystal pulling systems

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468279A (en) * 1982-08-16 1984-08-28 Avco Everett Research Laboratory, Inc. Method for laser melting of silicon
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS62260791A (ja) 1986-05-08 1987-11-13 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
EP0315156B1 (de) * 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Einrichtung zur Züchtung von Kristallen
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
DE4328982C2 (de) * 1993-08-28 1996-02-01 Leybold Ag Verfahren zum Regeln eines Mengenstromes von Partikeln zu einem Schmelztiegel und Regelanordnung zur Durchführung des Verfahrens

Also Published As

Publication number Publication date
EP0712945A1 (de) 1996-05-22
JP2935337B2 (ja) 1999-08-16
US5868835A (en) 1999-02-09
EP0712945B1 (de) 2000-08-23
DE69518490T2 (de) 2001-04-19
KR960017934A (ko) 1996-06-17
US5690733A (en) 1997-11-25
JPH08143392A (ja) 1996-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee