DE69704637D1 - Vorrichtung und Verfahren zur Herstellung von Einkristallen - Google Patents

Vorrichtung und Verfahren zur Herstellung von Einkristallen

Info

Publication number
DE69704637D1
DE69704637D1 DE69704637T DE69704637T DE69704637D1 DE 69704637 D1 DE69704637 D1 DE 69704637D1 DE 69704637 T DE69704637 T DE 69704637T DE 69704637 T DE69704637 T DE 69704637T DE 69704637 D1 DE69704637 D1 DE 69704637D1
Authority
DE
Germany
Prior art keywords
single crystals
producing single
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69704637T
Other languages
English (en)
Other versions
DE69704637T2 (de
Inventor
Masahiro Sakurada
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69704637D1 publication Critical patent/DE69704637D1/de
Publication of DE69704637T2 publication Critical patent/DE69704637T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
DE69704637T 1996-02-14 1997-02-12 Vorrichtung und Verfahren zur Herstellung von Einkristallen Expired - Fee Related DE69704637T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05089796A JP3531333B2 (ja) 1996-02-14 1996-02-14 チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶

Publications (2)

Publication Number Publication Date
DE69704637D1 true DE69704637D1 (de) 2001-05-31
DE69704637T2 DE69704637T2 (de) 2001-11-15

Family

ID=12871541

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704637T Expired - Fee Related DE69704637T2 (de) 1996-02-14 1997-02-12 Vorrichtung und Verfahren zur Herstellung von Einkristallen

Country Status (4)

Country Link
US (1) US5948163A (de)
EP (1) EP0790333B1 (de)
JP (1) JP3531333B2 (de)
DE (1) DE69704637T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4569103B2 (ja) * 2003-12-25 2010-10-27 信越半導体株式会社 単結晶の製造方法
KR100891570B1 (ko) 2007-11-09 2009-04-03 주식회사 실트론 단결정 실리콘 성장 장치 및 냉각 방법
US7887633B2 (en) * 2008-06-16 2011-02-15 Calisolar, Inc. Germanium-enriched silicon material for making solar cells
US8758507B2 (en) * 2008-06-16 2014-06-24 Silicor Materials Inc. Germanium enriched silicon material for making solar cells
JP5439972B2 (ja) * 2009-06-19 2014-03-12 株式会社Ｓｕｍｃｏ 大口径シリコン単結晶の製造方法
JP5331626B2 (ja) * 2009-09-07 2013-10-30 三菱マテリアルテクノ株式会社 単結晶シリコンの製造装置及び単結晶シリコンの製造方法
JP5526666B2 (ja) * 2009-09-08 2014-06-18 国立大学法人信州大学 サファイア単結晶の製造装置
JP5500134B2 (ja) * 2011-08-10 2014-05-21 信越半導体株式会社 単結晶育成装置
JP5585554B2 (ja) * 2011-08-26 2014-09-10 信越半導体株式会社 単結晶育成装置
WO2014205360A1 (en) * 2013-06-21 2014-12-24 South Dakota Board Of Regents Method of growing germanium crystals

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139918B (en) * 1983-05-21 1986-09-10 Cambridge Instr Ltd Crystal growing apparatus
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
DE3414290A1 (de) * 1984-04-14 1985-10-24 Leybold-Heraeus GmbH, 5000 Köln Kristallhalter
JP2553633B2 (ja) * 1988-05-19 1996-11-13 住友電気工業株式会社 高温炉の断熱方法
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH03177394A (ja) * 1989-12-07 1991-08-01 Hitachi Cable Ltd 化合物半導体の結晶引上装置
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
WO1993006264A1 (en) * 1991-09-19 1993-04-01 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
JP2720262B2 (ja) * 1992-10-26 1998-03-04 科学技術振興事業団 単結晶引上げ装置
JPH06300479A (ja) * 1993-04-14 1994-10-28 Zexel Corp 熱交換器における配管取付け構造
JPH0769778A (ja) * 1993-09-03 1995-03-14 Sumitomo Metal Ind Ltd 単結晶成長装置
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
EP0765954B1 (de) * 1995-09-26 1999-04-28 Balzers und Leybold Deutschland Holding Aktiengesellschaft Kristallziehanlage

Also Published As

Publication number Publication date
DE69704637T2 (de) 2001-11-15
JPH09221379A (ja) 1997-08-26
EP0790333B1 (de) 2001-04-25
EP0790333A1 (de) 1997-08-20
US5948163A (en) 1999-09-07
JP3531333B2 (ja) 2004-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee