GB2139918B - Crystal growing apparatus - Google Patents

Crystal growing apparatus

Info

Publication number
GB2139918B
GB2139918B GB08412706A GB8412706A GB2139918B GB 2139918 B GB2139918 B GB 2139918B GB 08412706 A GB08412706 A GB 08412706A GB 8412706 A GB8412706 A GB 8412706A GB 2139918 B GB2139918 B GB 2139918B
Authority
GB
United Kingdom
Prior art keywords
crystal growing
growing apparatus
crystal
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08412706A
Other versions
GB2139918A (en
GB8412706D0 (en
Inventor
David Rumsby
Marius Tjyberg
Brian J Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Instruments Ltd
Original Assignee
Cambridge Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB838314127A external-priority patent/GB8314127D0/en
Priority claimed from GB838316231A external-priority patent/GB8316231D0/en
Application filed by Cambridge Instruments Ltd filed Critical Cambridge Instruments Ltd
Priority to GB08412706A priority Critical patent/GB2139918B/en
Publication of GB8412706D0 publication Critical patent/GB8412706D0/en
Publication of GB2139918A publication Critical patent/GB2139918A/en
Application granted granted Critical
Publication of GB2139918B publication Critical patent/GB2139918B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB08412706A 1983-05-21 1984-05-18 Crystal growing apparatus Expired GB2139918B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08412706A GB2139918B (en) 1983-05-21 1984-05-18 Crystal growing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB838314127A GB8314127D0 (en) 1983-05-21 1983-05-21 Crystal growing methods
GB838316231A GB8316231D0 (en) 1983-06-15 1983-06-15 Crystal growing methods
GB08412706A GB2139918B (en) 1983-05-21 1984-05-18 Crystal growing apparatus

Publications (3)

Publication Number Publication Date
GB8412706D0 GB8412706D0 (en) 1984-06-27
GB2139918A GB2139918A (en) 1984-11-21
GB2139918B true GB2139918B (en) 1986-09-10

Family

ID=27262109

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08412706A Expired GB2139918B (en) 1983-05-21 1984-05-18 Crystal growing apparatus

Country Status (1)

Country Link
GB (1) GB2139918B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62138384A (en) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd Method and device for pulling single crystal
JPH0639352B2 (en) * 1987-09-11 1994-05-25 信越半導体株式会社 Single crystal manufacturing equipment
JP2670548B2 (en) * 1990-04-27 1997-10-29 東芝セラミックス株式会社 Silicon single crystal manufacturing equipment
DE4204777A1 (en) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Zonal single crystal growth with increased temp. gradient control - uses heat screens and sepd. heater elements to control and alter the solid-liq. interface position
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
US5441014A (en) * 1991-06-24 1995-08-15 Komatsu Electronic Metals Co., Ltd. Apparatus for pulling up a single crystal
JP2619611B2 (en) * 1993-05-31 1997-06-11 住友シチックス株式会社 Single crystal manufacturing apparatus and manufacturing method
JP3531333B2 (en) * 1996-02-14 2004-05-31 信越半導体株式会社 Crystal manufacturing apparatus by Czochralski method, crystal manufacturing method, and crystal manufactured by this method
JP4097729B2 (en) * 1996-05-22 2008-06-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Semiconductor single crystal manufacturing equipment
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal

Also Published As

Publication number Publication date
GB2139918A (en) 1984-11-21
GB8412706D0 (en) 1984-06-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940518