DE3477208D1 - Apparatus for making a single crystal - Google Patents

Apparatus for making a single crystal

Info

Publication number
DE3477208D1
DE3477208D1 DE8484401103T DE3477208T DE3477208D1 DE 3477208 D1 DE3477208 D1 DE 3477208D1 DE 8484401103 T DE8484401103 T DE 8484401103T DE 3477208 T DE3477208 T DE 3477208T DE 3477208 D1 DE3477208 D1 DE 3477208D1
Authority
DE
Germany
Prior art keywords
making
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484401103T
Other languages
German (de)
Inventor
Bernard Ferrand
Yves Grange
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE3477208D1 publication Critical patent/DE3477208D1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
DE8484401103T 1983-06-06 1984-05-29 Apparatus for making a single crystal Expired DE3477208D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8309338A FR2546912B1 (en) 1983-06-06 1983-06-06 METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL

Publications (1)

Publication Number Publication Date
DE3477208D1 true DE3477208D1 (en) 1989-04-20

Family

ID=9289504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484401103T Expired DE3477208D1 (en) 1983-06-06 1984-05-29 Apparatus for making a single crystal

Country Status (4)

Country Link
US (1) US4666681A (en)
EP (1) EP0130865B1 (en)
DE (1) DE3477208D1 (en)
FR (1) FR2546912B1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2648065A1 (en) * 1989-06-12 1990-12-14 Solvay DEVICE FOR RECOVERING BY MELTING THE METAL CONSTITUTING A FUSE CORE
JPH0729874B2 (en) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 Bridge for connecting core wires of polycrystalline silicon manufacturing equipment
US4966645A (en) * 1989-12-04 1990-10-30 At&T Bell Laboratories Crystal growth method and apparatus
US5023058A (en) * 1990-01-30 1991-06-11 Grumman Aerospace Corporation Ampoule for crystal-growing furnace
US5178719A (en) * 1991-08-20 1993-01-12 Horiba Instruments, Inc. Continuous refill crystal growth method
US5280495A (en) * 1992-02-14 1994-01-18 Ajax Magnethermic Corporation Furnace refractory extraction system and method
US5447685A (en) * 1993-09-03 1995-09-05 Medivators, Inc. Medical waste disposal apparatus and method for disposing of waste
FR2733494A1 (en) * 1995-04-28 1996-10-31 Centre Nat Rech Scient New caesium magnesium indium fluoride crystal used as scintillator or neutrino detector
FR2746176B1 (en) * 1996-03-14 1998-04-10 NON-OXIDIZING GAS INJECTION DEVICE INSIDE AN OVEN
JP3513046B2 (en) * 1998-03-31 2004-03-31 日本碍子株式会社 Single crystal manufacturing equipment
AUPR054000A0 (en) * 2000-10-04 2000-10-26 Austai Motors Designing Pty Ltd A planetary gear apparatus
US6780239B2 (en) * 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US20040258496A1 (en) * 2002-04-08 2004-12-23 Marusich Troy D. High frequency tooth pass cutting device and method
DE102005010654A1 (en) * 2005-03-08 2006-09-14 Schott Ag Production of high-homogeneous, tension-poor and large volume calcium fluoride single crystal e.g. for production of lenses, prisms and optical components for deep ultraviolet photolithography, comprises cooling crystal after its breeding
US20060201412A1 (en) * 2005-03-08 2006-09-14 Christian Poetisch Method of making highly uniform low-stress single crystals with reduced scattering
CN101405440B (en) * 2006-03-24 2012-05-30 日本碍子株式会社 Process for producing nitride single-crystal and apparatus therefor
US7961938B1 (en) * 2006-06-30 2011-06-14 Adobe Systems Incorporated Finding and structuring images based on a color search
DE102007026298A1 (en) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Arrangement and method for producing a crystal from the melt of a raw material and single crystal
US8173099B2 (en) 2007-12-19 2012-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a porous aluminous material
US9109299B1 (en) * 2011-03-30 2015-08-18 CapeSym, Inc. Solidification of high quality alloy semiconductors
CN104790025A (en) * 2015-04-14 2015-07-22 营口市荣兴达科技实业有限公司 Preparation device and preparation technology for magnesium fluoride single crystal coating material
DE102019208389A1 (en) 2019-06-07 2020-12-10 Freiberger Compound Materials Gmbh Process for the production of residual stress and dislocation-free AIII-BV substrate wafers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2214976A (en) * 1939-01-05 1940-09-17 Research Corp Apparatus for the manufacture of crystalline bodies
US3033659A (en) * 1959-04-21 1962-05-08 Gen Electric Preparation of phosphor crystals
US3139653A (en) * 1959-08-06 1964-07-07 Theodore H Orem Apparatus for the growth of preferentially oriented single crystals of metals
FR1246889A (en) * 1959-10-15 1960-11-25 Pechiney Prod Chimiques Sa Process for obtaining very pure silicon ingots
US3273969A (en) * 1963-12-05 1966-09-20 Philco Corp Apparatus for growing fluoride crystals
US3649552A (en) * 1967-03-31 1972-03-14 Hughes Aircraft Co Method for preparing high quality rare earth and alkaline earth fluoride single crystals
US3514265A (en) * 1967-04-05 1970-05-26 Us Army Method of growing strain-free single crystals
CA918247A (en) * 1970-04-28 1973-01-02 United Aircraft Corporation Single crystal casting
US3639718A (en) * 1970-06-15 1972-02-01 Little Inc A Pressure- and temperature-controlled crystal growing apparatus
FR2175594B1 (en) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound

Also Published As

Publication number Publication date
FR2546912B1 (en) 1987-07-10
FR2546912A1 (en) 1984-12-07
EP0130865A1 (en) 1985-01-09
US4666681A (en) 1987-05-19
EP0130865B1 (en) 1989-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee