DE69601424D1 - Verfahren und Vorrichtung zur Steuerung des Kristallwachstums - Google Patents

Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Info

Publication number
DE69601424D1
DE69601424D1 DE69601424T DE69601424T DE69601424D1 DE 69601424 D1 DE69601424 D1 DE 69601424D1 DE 69601424 T DE69601424 T DE 69601424T DE 69601424 T DE69601424 T DE 69601424T DE 69601424 D1 DE69601424 D1 DE 69601424D1
Authority
DE
Germany
Prior art keywords
crystal growth
controlling crystal
controlling
growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69601424T
Other languages
English (en)
Other versions
DE69601424T2 (de
Inventor
Erich Dornberger
Ammon Wilfried Von
Hans Oelkrug
Franz Wasmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of DE69601424D1 publication Critical patent/DE69601424D1/de
Application granted granted Critical
Publication of DE69601424T2 publication Critical patent/DE69601424T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
DE69601424T 1996-06-27 1996-06-27 Verfahren und Vorrichtung zur Steuerung des Kristallwachstums Expired - Fee Related DE69601424T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96110356A EP0821082B1 (de) 1996-06-27 1996-06-27 Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Publications (2)

Publication Number Publication Date
DE69601424D1 true DE69601424D1 (de) 1999-03-04
DE69601424T2 DE69601424T2 (de) 1999-06-02

Family

ID=8222939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601424T Expired - Fee Related DE69601424T2 (de) 1996-06-27 1996-06-27 Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Country Status (7)

Country Link
US (1) US5868831A (de)
EP (1) EP0821082B1 (de)
JP (1) JP3097838B2 (de)
KR (1) KR100206520B1 (de)
DE (1) DE69601424T2 (de)
MY (1) MY133688A (de)
SG (1) SG50850A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3050290B2 (ja) * 1997-03-10 2000-06-12 日本電気株式会社 アモルファス化領域決定方法
DE19806949A1 (de) * 1998-02-19 1999-08-26 Leybold Systems Gmbh Verfahren zum Steuern von Kristallzüchtungsprozessen
US6171391B1 (en) * 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
US6776840B1 (en) * 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
CN1172029C (zh) * 1999-05-22 2004-10-20 科学技术振兴事业团 高质量单晶的制成方法及其装置
US6203611B1 (en) * 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
US6760631B1 (en) * 2000-10-04 2004-07-06 General Electric Company Multivariable control method and system without detailed prediction model
WO2004044277A1 (en) * 2002-11-12 2004-05-27 Memc Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法
US7959732B1 (en) 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
JP4317575B2 (ja) * 2005-08-19 2009-08-19 Ｓｕｍｃｏソーラー株式会社 シリコン電磁鋳造装置およびその操作方法
JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
KR100901343B1 (ko) * 2007-07-23 2009-06-05 (주)실리콘화일 결정질 반도체 박막 제조 방법
US20110098862A1 (en) * 2009-10-27 2011-04-28 ExxonMobil Research Engineering Company Law Department Multi-stage processes and control thereof
KR101208285B1 (ko) 2010-03-08 2012-12-05 주식회사 엘지실트론 잉곳 성장 제어시스템 및 이를 포함하는 잉곳 성장장치
US20110245937A1 (en) * 2010-03-31 2011-10-06 General Electric Company System and method for interoperability between carbon capture system, carbon emission system, carbon transport system, and carbon usage system
DE102012108009B4 (de) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Modellprädiktive Regelung des Zonenschmelz-Verfahrens
DE102013202155A1 (de) * 2013-02-08 2014-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Prüfen oder Identifizieren einer Modellstruktur
DE102016006453B4 (de) 2016-05-24 2021-09-02 Technische Universität Ilmenau Verfahren zur automatischen Regelung eines Phasenumwandlungsvorganges und seine Verwendung
DE102016219605A1 (de) 2016-10-10 2018-04-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
CN109680329A (zh) * 2018-07-26 2019-04-26 天津中环领先材料技术有限公司 基于熔区高度和晶体角度控制区熔晶体生长方法及系统
CN111235626A (zh) * 2019-10-30 2020-06-05 弘元新材料(包头)有限公司 一种提高cz单晶炉调温效率的调温方法
CN113344439B (zh) * 2021-06-29 2024-04-26 蓝思系统集成有限公司 一种晶体生长控制方法、装置、系统及可读存储介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
WO1983002464A1 (en) * 1982-01-04 1983-07-21 Seymour, Robert, Stephen Diameter control in czochralski crystal growth
FR2621053A1 (fr) * 1987-09-29 1989-03-31 Commissariat Energie Atomique Procede de commande d'une machine de tirage de monocristaux
US4943160A (en) * 1988-07-25 1990-07-24 Massachusetts Institute Of Technology Interface angle estimation system
US4952780A (en) * 1988-10-31 1990-08-28 Grumman Aerospace Corporation Computerized multi-zone crystal growth furnace
EP0536405B1 (de) * 1991-04-26 2000-03-01 Mitsubishi Materials Corporation Verfahren zum ziehen von einkristallen
DE4301072B4 (de) * 1993-01-16 2006-08-24 Crystal Growing Systems Gmbh Verfahren zum Ziehen von Einkristallen aus einer Schmelze

Also Published As

Publication number Publication date
KR100206520B1 (ko) 1999-07-01
EP0821082B1 (de) 1999-01-20
EP0821082A1 (de) 1998-01-28
JPH1072300A (ja) 1998-03-17
DE69601424T2 (de) 1999-06-02
MY133688A (en) 2007-11-30
US5868831A (en) 1999-02-09
KR980002311A (ko) 1998-03-30
SG50850A1 (en) 1998-07-20
JP3097838B2 (ja) 2000-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee