KR100901343B1 - 결정질 반도체 박막 제조 방법 - Google Patents
결정질 반도체 박막 제조 방법 Download PDFInfo
- Publication number
- KR100901343B1 KR100901343B1 KR1020070073304A KR20070073304A KR100901343B1 KR 100901343 B1 KR100901343 B1 KR 100901343B1 KR 1020070073304 A KR1020070073304 A KR 1020070073304A KR 20070073304 A KR20070073304 A KR 20070073304A KR 100901343 B1 KR100901343 B1 KR 100901343B1
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- thin film
- semiconductor layer
- substrate
- low concentration
- concentration semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Abstract
Description
Claims (9)
- (a)기판에 1014/㎤ ~ 1019/㎤의 불순물이 포함되어 있는 저농도 반도체층을 형성하는 단계;(b)상기 저농도 반도체층에 광을 조사하여, 광전하를 생성하는 단계; 및(c)상기 저농도 반도체층을 유도가열(Induction Heating)하여, 상기 저농도 반도체층을 결정화시키는 단계를 구비하는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제1항에 있어서, 상기 (c)단계는,(c1)상기 저농도 반도체층 위에서 유도코일에 교류전류를 흐르게 하여 교류자기장이 형성되는 단계;(c2)상기 형성된 교류자기장에 의해 상기 광전하가 가속되는 단계;(c3)상기 광전하의 가속에 의하여 상기 저농도 반도체층 중에서 상기 유도코일 아래에 있는 부분이 가열되어 유체상태로 되는 단계; 및(c4)상기 유체상태로 된 부분에서 결정화가 이루어지는 단계를 구비하는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제2항에 있어서, 상기 (c4)단계는,상기 유체상태인 부분과 다른 고체 상태인 부분의 계면에서, 상기 고체 상태인 부분을 시드(seed)로 하여, 결정화가 진행되는 것을 특징으로 하는 결정질 반도 체 박막 제조 방법.
- 삭제
- 제1항에 있어서, 상기 (b)단계는,1.8eV ~ 3.0eV 범위의 에너지를 갖는 광을 조사하여 이루어지는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제1항에 있어서, 상기 (a)단계는,상기 기판에 확산방지층을 형성한 후 상기 저농도 반도체층을 형성하는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제6항에 있어서, 상기 확산방지층은,산화물 또는 질화물로 형성되는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제1항에 있어서, 상기 기판은,비정질 기판 또는 다결정 기판인 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
- 제6항에 있어서, 상기 (c)단계는,상기 확산방지층을 시드(seed)로 하여, 상기 저농도 반도체층의 결정화가 진행되는 것을 특징으로 하는 결정질 반도체 박막 제조 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070073304A KR100901343B1 (ko) | 2007-07-23 | 2007-07-23 | 결정질 반도체 박막 제조 방법 |
PCT/KR2008/004145 WO2009014337A2 (en) | 2007-07-23 | 2008-07-15 | Method of manufacturing crystalline semiconductor thin film |
US12/668,185 US8030190B2 (en) | 2007-07-23 | 2008-07-15 | Method of manufacturing crystalline semiconductor thin film |
CN200880023163A CN101720496A (zh) | 2007-07-23 | 2008-07-15 | 制造结晶半导体薄膜的方法 |
JP2010518110A JP2010534412A (ja) | 2007-07-23 | 2008-07-15 | 結晶性半導体薄膜の製造方法 |
EP08778803.0A EP2171746A4 (en) | 2007-07-23 | 2008-07-15 | PROCESS FOR PREPARING A CRYSTALLINE SEMICONDUCTOR THIN LAYER |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070073304A KR100901343B1 (ko) | 2007-07-23 | 2007-07-23 | 결정질 반도체 박막 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20090010311A KR20090010311A (ko) | 2009-01-30 |
KR100901343B1 true KR100901343B1 (ko) | 2009-06-05 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070073304A KR100901343B1 (ko) | 2007-07-23 | 2007-07-23 | 결정질 반도체 박막 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8030190B2 (ko) |
EP (1) | EP2171746A4 (ko) |
JP (1) | JP2010534412A (ko) |
KR (1) | KR100901343B1 (ko) |
CN (1) | CN101720496A (ko) |
WO (1) | WO2009014337A2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0806746D0 (en) | 2008-04-14 | 2008-05-14 | Ucl Business Plc | Membrane |
EP2477212A1 (de) * | 2008-06-09 | 2012-07-18 | Dritte Patentportfolio Beteiligungsgesellschaft mbH & Co. KG | Polykristalline Silizium-Dünnschichten hergestellt durch Titan-unterstützten Metall-induzierten Schichtaustausch |
CN103000530B (zh) * | 2012-11-13 | 2015-05-20 | 深圳丹邦投资集团有限公司 | 顶栅氧化物薄膜晶体管的制造方法 |
CN103560077A (zh) * | 2013-11-13 | 2014-02-05 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜基板制作方法 |
EP3635768A4 (en) * | 2017-05-10 | 2021-02-24 | McMahon, Shane Thomas | THIN LAYER CRYSTALLIZATION PROCESS |
Citations (3)
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JPH0883766A (ja) * | 1994-09-09 | 1996-03-26 | Sony Corp | 非晶質シリコンの結晶化方法および薄膜トランジスタの製造方法 |
JPH10106951A (ja) | 1996-09-27 | 1998-04-24 | Sharp Corp | 半導体薄膜、半導体装置および半導体薄膜の製造方法 |
JP2002175984A (ja) | 2000-12-08 | 2002-06-21 | Sharp Corp | 半導体装置の製造方法 |
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FR2513659A1 (fr) * | 1981-09-29 | 1983-04-01 | Centre Nat Rech Scient | Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs |
JP2510157B2 (ja) * | 1986-03-31 | 1996-06-26 | キヤノン株式会社 | 半導体の改質処理方法 |
EP0821082B1 (en) * | 1996-06-27 | 1999-01-20 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Process and apparatus for controlling the growth of a crystal |
US5970368A (en) * | 1996-09-30 | 1999-10-19 | Kabushiki Kaisha Toshiba | Method for manufacturing polycrystal semiconductor film |
JP4098377B2 (ja) * | 1996-09-30 | 2008-06-11 | 株式会社東芝 | 多結晶半導体膜の製造方法 |
JP2000082679A (ja) | 1998-07-08 | 2000-03-21 | Canon Inc | 半導体基板とその作製方法 |
JP4959876B2 (ja) * | 2001-02-26 | 2012-06-27 | 株式会社半導体エネルギー研究所 | 装置 |
JP3973849B2 (ja) * | 2001-03-09 | 2007-09-12 | 住友重機械工業株式会社 | レーザアニール方法 |
JP4289816B2 (ja) * | 2001-03-22 | 2009-07-01 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP5130463B2 (ja) * | 2001-03-28 | 2013-01-30 | 独立行政法人産業技術総合研究所 | 薄膜半導体素子の製造方法 |
KR100456470B1 (ko) * | 2002-04-19 | 2004-11-10 | 주식회사 비아트론 | 반도체 막의 저온 열처리 장치 |
KR100618614B1 (ko) * | 2003-09-02 | 2006-09-08 | 진 장 | 플렉서블 금속 기판 상의 실리콘 박막 형성 방법 |
JP2005294744A (ja) * | 2004-04-05 | 2005-10-20 | Bridgestone Corp | 半導体材料の結晶化方法及び光触媒の製造方法 |
US7192818B1 (en) * | 2005-09-22 | 2007-03-20 | National Taiwan University | Polysilicon thin film fabrication method |
KR100793607B1 (ko) * | 2006-06-27 | 2008-01-10 | 매그나칩 반도체 유한회사 | 에피텍셜 실리콘 웨이퍼 및 그 제조방법 |
WO2009111340A2 (en) * | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
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2007
- 2007-07-23 KR KR1020070073304A patent/KR100901343B1/ko active IP Right Grant
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2008
- 2008-07-15 US US12/668,185 patent/US8030190B2/en active Active
- 2008-07-15 WO PCT/KR2008/004145 patent/WO2009014337A2/en active Application Filing
- 2008-07-15 CN CN200880023163A patent/CN101720496A/zh active Pending
- 2008-07-15 JP JP2010518110A patent/JP2010534412A/ja active Pending
- 2008-07-15 EP EP08778803.0A patent/EP2171746A4/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0883766A (ja) * | 1994-09-09 | 1996-03-26 | Sony Corp | 非晶質シリコンの結晶化方法および薄膜トランジスタの製造方法 |
JPH10106951A (ja) | 1996-09-27 | 1998-04-24 | Sharp Corp | 半導体薄膜、半導体装置および半導体薄膜の製造方法 |
JP2002175984A (ja) | 2000-12-08 | 2002-06-21 | Sharp Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100330785A1 (en) | 2010-12-30 |
JP2010534412A (ja) | 2010-11-04 |
WO2009014337A3 (en) | 2009-04-02 |
CN101720496A (zh) | 2010-06-02 |
US8030190B2 (en) | 2011-10-04 |
KR20090010311A (ko) | 2009-01-30 |
EP2171746A2 (en) | 2010-04-07 |
EP2171746A4 (en) | 2013-07-10 |
WO2009014337A2 (en) | 2009-01-29 |
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