CN103560077A - 一种多晶硅薄膜基板制作方法 - Google Patents

一种多晶硅薄膜基板制作方法 Download PDF

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CN103560077A
CN103560077A CN201310573192.0A CN201310573192A CN103560077A CN 103560077 A CN103560077 A CN 103560077A CN 201310573192 A CN201310573192 A CN 201310573192A CN 103560077 A CN103560077 A CN 103560077A
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刘德明
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BOE Technology Group Co Ltd
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Abstract

本发明涉及半导体领域，特别涉及一种多晶硅薄膜基板的制作方法，包括:在基板上制备非晶硅薄膜；将处理过的基板穿过高频线圈，得到多晶硅薄膜基板。

Description

一种多晶硅薄膜基板制作方法
技术领域
本发明涉及半导体领域，特别涉及一种多晶硅制作方法。
背景技术
鉴于多晶硅具有高的迁移率(几十cm2/V.s甚至几百cm2/V.s)、以及高的光电响应效率与稳定性，已广泛应用于平板显示的有源层和高效长寿命薄膜太阳能电池等微电子、光电子器件。优质的多晶硅材料是获得良好性能器件的基础，而多晶硅技术的关键在于其晶化方法，现有的晶化方法主要包括高温固相晶化(SPC)，激光晶化(ELA)和金属诱导晶化(MIC)。这三种方法各有特点，SPC通过直接对器件整体高温加热使非晶硅转化为多晶硅，由于温度较高，对基板材料的耐高温要求很苛刻；ELA通过激光对非晶硅表面进行加热，虽然温度同样会向基板扩散，虽然与SPC相比ELA对基板材料的耐高温要求相对较低，但依然要有很高的耐受温度,另外由于激光为点光源,在转换为线光源时难以避免的会产生能量不均匀的现象,因此激光加热时会产生非晶硅表面受热不均的现象,影响最终产品,多晶硅薄膜的均一性；MIC通过在非晶硅中加入催化元素，在加热情况下诱导非晶硅晶化，虽然可以大大降低操作温度，但是会引入杂质元素污染多晶硅，导致其半导体性质改变。
因此，能够找到一种工艺既简单，对基板耐高温性能要求较低的多晶硅晶化方法是非常有意义的。
发明内容
本发明要解决的技术问题是提供一种工艺简单，对耐高温性能要求较低的多晶硅薄膜基板的制作方法，在利用加热覆有非晶硅薄膜基板时，能够均匀加热非晶硅薄膜，同时防止过多热量传导到基板。
为解决上述技术问题，本发明的实施例提供技术方案如下
提供一种多晶硅薄膜基板制作方法,包括:
S1在基板上制备非晶硅薄膜；
S2将S1处理过的基板穿过高频线圈。
进一步地，在所述步骤S2之前还包括：在所述非晶硅薄膜上制备金属薄膜；
在所述步骤S2之后还要包括：
S3将金属薄膜去除。
进一步地，所述步骤S1还包括：在非晶硅薄膜中掺入金属离子。
进一步地，所述步骤S1还包括:在所述基板与所述多晶硅薄膜之间制备缓冲层。
进一步地，所述步骤S1还包括：
在非晶硅薄膜中掺入金属离子，然后在所述非晶硅薄膜上制备金属薄膜；在所述步骤S2之后还要包括：
S3将金属薄膜去除。
本发明的有益效果如下：
本发明中非晶硅薄膜基板只有非晶硅薄膜中与高频磁感线圈相交的截面产生高温，因为非晶硅薄膜很薄，加热截面又小，所以总热量少，向基板传到的热量就少，因此对基板的耐高温要求较低，可以用于柔性基板等;而且由于是通过电磁感应产生高温，在高频磁感线圈内磁场强度大，分布密集，加热的均匀性好。
附图说明
图1为非晶硅薄膜基板的结构示意图；
图2为非晶硅薄膜基板穿过高频线圈示意图。
具体实施方式
以下结合附图对本发明的原理和特征进行描述，所举实例只用于解释本发明，并非用于限定本发明的范围。
实施例1
如图1所示,在基板100上通过气相沉积的方法制备一层非晶硅薄膜101,基板100可以是硬质基板如玻璃基板,也可以是柔性基板如聚酰亚胺基板。
将覆有非晶硅薄膜的基板100穿过高频线圈102,如图2所示，通过高频线圈102与非晶硅薄膜101的电磁感应，在非晶硅薄膜101与高频线圈102相交的截面110产生涡旋电流，涡旋电流产生热量,可以加热非晶硅，使非晶硅融化。随着基板的移动，被加热的截面移动出高频线圈102所在平面，因为交变磁场减弱，涡旋电流也逐渐消失，融化的非晶硅逐渐冷却结晶，形成多晶硅。
因为高频线圈102可以缠绕成很窄的线圈,使截面110的宽度较窄,这样融化的硅的量较少,由于硅融化后基板移动出高频线圈102所在平面后,迅速冷却。因此热量只有少量能够扩散到基板上,不足以对基板造成伤害。
另外,通过交变磁场在截面110处产生的涡旋电流较均匀,产生的热量也均匀,截面110处的非晶硅同时融化,融化的硅冷却时形成的多晶硅薄膜也更均匀,因此可以得到质量更好的多晶硅薄膜基板。
实施例2
与实施例1所述实验方法相同,区别在基板100上制备一层非晶硅薄膜101后再通过磁溅射方法制备一层金属薄膜;
优选铝,镁,银,或他们的合金;
在通过高频线圈102加热结晶后，再通过蚀刻的方法去除金属薄膜得到多晶硅薄膜基板。
因为金属薄膜的导电性优良,所以更容易在高频线圈的作用下产生涡旋电流,更容易产生热量,加快加热速度,提高生产率。
实施例3
与实施例1所述实验方法相同,区别在非晶硅薄膜101中掺入金属离子;
优选铁,钴,镍,中的一种或者多种;
以镍离子为例,掺杂方法可以在制备完成非晶硅薄膜101后在其表面旋涂含镍离子的溶液,然后加热退火,使镍离子扩散到非晶硅薄膜101中。
引入镍离子后,在非晶硅融化后冷却的过程中镍离子可以充当晶核,诱导硅结晶形成多晶硅。
实施例4
与实施例1所述实验方法相同,区别在基板100上先制备一层缓冲层；
优选二氧化硅或者氮化硅；
然后再制备非晶硅薄膜101；
因为缓冲层的隔离作用,可以阻止基板中的离子对非晶硅薄膜及晶化后的的多晶硅薄膜的污染，还可以起到减缓热扩散,减少非晶硅薄膜热扩散对基板的影响。
实施例5
与实施例4所述实验方法相同,区别在非晶硅薄膜101中掺入金属离子;
优选铁,钴,镍中的一种或者多种;
然后再在非晶硅薄膜101上通过磁溅射方法制备一层金属薄膜;
这样可以集合实施例1～4的所有优点,通过金属薄膜和掺杂的金属离子提高加热速度,非晶硅溶解冷却时金属离子还可以充当晶核,诱导硅结晶;同时缓冲层减少热扩散,防止热量对基板产生损害。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (5)

1.一种多晶硅薄膜基板制作方法,其特征在于,包括:
S1在基板上制备非晶硅薄膜；
S2将S1处理过的基板穿过高频线圈。
2.如权利要求1所述方法,其特征在于,在所述步骤S2之前还包括：在所述非晶硅薄膜上制备金属薄膜；
在所述步骤S2之后还要包括：
S3将金属薄膜去除。
3.如权利要求1所述方法,其特征在于,所述步骤S1还包括：在非晶硅薄膜中掺入金属离子。
4.如权利要求1所述方法,其特征在于,在所述步骤S1之前还包括:在所述基板上制备缓冲层。
5.如权利要求4所述方法，其特征在于,所述步骤S1还包括：
在非晶硅薄膜中掺入金属离子，然后在所述非晶硅薄膜上制备金属薄膜；
在所述步骤S2之后还要包括：
S3将金属薄膜去除。
CN201310573192.0A 2013-11-13 2013-11-13 一种多晶硅薄膜基板制作方法 Pending CN103560077A (zh)

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CN106129271A (zh) * 2016-07-13 2016-11-16 信利（惠州）智能显示有限公司 有源矩阵显示基板的退火方法及装置
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CN115241330A (zh) * 2022-09-19 2022-10-25 英利能源发展(天津)有限公司 一种氢氟酸刻蚀太阳能电池用半导体硅片装置

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