CN104409570A - 一种晶体硅太阳能电池的制作方法 - Google Patents

一种晶体硅太阳能电池的制作方法 Download PDF

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CN104409570A
CN104409570A CN201410673494.XA CN201410673494A CN104409570A CN 104409570 A CN104409570 A CN 104409570A CN 201410673494 A CN201410673494 A CN 201410673494A CN 104409570 A CN104409570 A CN 104409570A
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黄继昌
蔡桂钧
蒋红光
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GUANGXI ZHITONG ENERGY SAVING ENVIRONMENTAL PROTECTION TECHNOLOGY Co Ltd
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Abstract

本发明公开了一种晶体硅太阳能电池的制作方法，包括以下步骤：步骤1、制备复合浆料：在液态铟镓合金中混合固态铜粉，搅拌均匀后得到复合浆料；步骤2、制备选择性发射极：在硅片正面电极区域进行激光开槽；步骤3、丝网印刷正面电极：用高准丝网印刷工艺在开槽区域印刷步骤1得到的复合浆料；步骤4、低温烧结；步骤5、在基底层和背面接触件之间形成一第一钝化层和一隧道接触层，在钝化层和基底层之间装有一个由a-Si构成的本征层，钝化层由与基底层极性相同的掺杂材料构成。本发明的制作方法采用低熔点铟镓合金和铜粉的混合物作为电极材料，在保持现有电极材料-铜所具有的高导通性和低电阻率的同时，大大降低了成本。

Description

一种晶体硅太阳能电池的制作方法
技术领域
本发明涉及太阳能电池技术领域，特别是涉及一种晶体硅太阳能电池的制作方法。
背景技术
晶体硅太阳能电池是一种把光能直接转换成电能的半导体器件。对于整个晶体硅太阳能电池器件而言，结构和性能的体现都需要经过电极采样数据来实现，因此，在晶体硅太阳能电池制作工艺中，当形成PN结后，制备能够将采集的光电流导出的正面电极是该工艺中关键的步骤之一，并且正面电极的均匀性和导通性对产品的性能及成品率有很大影响。
晶体硅太阳能电池正面电极的制备方法可以分为电镀、溅射和丝网印刷。电镀方法制备的电极质量高，但是该方法成本高，并且制备速度慢，另外该方法在电镀过程中可能会使用一些有毒有害的物质，存在一定的安全和健康隐患。溅射方法制备的电极质量也较高，但是，与电镀方法相同，该方法的成本也较高，并且制备速度慢。与电镀和溅射方法相比，尽管丝网印刷方法具有设备简单，操作方便，成本低廉，安全无毒，易形成电极，以及能够得到良好的金属和半导体的欧姆接触，并且表面状态良好的优点。因此，目前工业界多采用丝网印刷方法制备晶体硅太阳能电池的正面电极。
丝网印刷工艺是在高温条件下将特定的金属材质固化，以形成金属半导体的欧姆接触。对于晶体硅太阳能电池的正面电极而言，现有丝网印刷工艺是用胶刮条刮抹印刷用电极浆料，使其透过不绣钢丝网网孔至硅片表面，然后通过烧结形成电极。目前，丝网印刷工艺中一般采用银浆作为晶体硅太阳能电池的正面电极浆料，烧结温度一般在850℃～900℃之间。该工艺存在如下缺点：(1)银作为贵金属，其价格昂贵，而且正面电极材料的用量很大，因此，采用该工艺制备晶体硅太阳能电池正面电极的成本很高；(2)该工艺中的烧结温度较高，存在易损伤硅片、引起产品翘曲度较大，以及能耗高等问题。
发明内容
本发明的目的是针对现有技术的不足，提供一种晶体硅太阳能电池的制作方法，该方法具有成本低，能够低温形成电极的优点。
本发明实现上述技术目的所采用的技术方案为：一种晶体硅太阳能电池的制作方法，包括以下步骤：
步骤1、制备复合浆料：在液态铟镓合金中混合固态铜粉，搅拌均匀后得到复合浆料；
步骤2、制备选择性发射极：在硅片正面电极区域进行激光开槽；
步骤3、丝网印刷正面电极：用高准丝网印刷工艺在开槽区域印刷步骤1得到的复合浆料；
步骤4、低温烧结：在温度为300℃～400℃下进行烧结，形成正面电极。
步骤5、在基底层和背面接触件之间形成一第一钝化层和一隧道接触层，在钝化层和基底层之间装有一个由a-Si构成的本征层，钝化层由与基底层极性相同的掺杂材料构成。
上述复合浆料中，铜的质量百分含量优选为60％～90％。
上述复合浆料中，铜粉的纯度优选为99.99％。
上述复合浆料中，铜粉的粒径优选为2微米～20微米。
上述步骤1中，搅拌温度优选为160℃～220℃，搅拌时间优选为30分钟～300分钟。
上述步骤2中，激光功率优选为10W～20W。
本发明一种晶体硅太阳能电池的制作方法采用低熔点铟镓合金和铜粉的混合物作为复合浆料，在硅片正面电极区域进行激光开槽制备选择性发射电极，然后用高准丝网印刷工艺将复合浆料印刷在开槽区域，最后在温度为300～400℃下进行低温烧结，形成正面电极。与现有技术相比，本发明的制作方法采用低熔点铟镓合金和铜粉的混合物作为电极材料，在保持现有电极材料-铜所具有的高导通性和低电阻率的同时，大大降低了成本；同时，通过低温烧结形成正面电极，克服了现有技术中存在的易损伤硅片、引起产品翘曲度较大，以及能耗高等问题。另外，为了解决铟镓铜合金和半导体的欧姆接触问题，本发明的制作方法用激光在需要印刷区域进行激光刻槽，形成选择性发射极，在铜粉混合铟镓的复合浆料固化后能在低温条件下与半导体形成欧姆接触。因此，本发明的制作方法能够提高产品质量，降低制造成本，在晶体硅太阳能电池领域具有重要的产业化前景。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它附图。
图1是本发明实施例1中硅片表面的激光开槽区域。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
实施例1：
步骤1、制备铟镓铜浆料：
在160℃的恒温操作台中，在铟镓液态合金中加入粒径为2微米～20微米，纯度为99.99％的铜粉颗粒并搅拌形成粘稠状浆料，按照质量百分比计，在整个混合物中铜粉的含量为60％；
步骤2、制备选择性发射极：
在硅片表面，按图1所示的区域对硅片进行激光刻槽，制得选择性发射极；
步骤3、丝网印刷正面电极：
将选择性发射极制备完成之后的硅片放入HF溶液中除去磷硅玻璃层，然后取出硅片，在180℃的温度下，将复合浆料精准印刷在图1所示的激光刻槽区域上；
步骤4、低温烧结：
将硅片放入烧结炉，在氮气保护下进行快速烧结，烧结温度为300℃，烧结时间为8秒，然后将硅片取出并自然冷却到室温，硅片表面即得到正面电极。
实施例2：
步骤1、制备铟镓铜浆料：
在220℃的恒温操作台中，在铟镓液态合金中加入粒径为2微米～20微米、纯度为99.99％的铜粉颗粒并搅拌形成粘稠状浆料，按照质量百分比计，在整个混合物中铜粉的含量为80％；
步骤2、制备选择性发射极：
在硅片表面，按图1所示的区域对硅片进行激光刻槽，制得选择性发射极；
步骤3、丝网印刷正面电极：
将选择性发射极制备完成之后的硅片放入HF溶液中除去磷硅玻璃层，然后取出硅片，在180℃的温度下，将复合浆料精准印刷在图1所示的激光刻槽区域上；
步骤4、低温烧结：
将硅片放入烧结炉，在氮气保护下进行快速烧结，烧结温度为400℃，烧结时间为8秒，然后将硅片取出并自然冷却到室温，硅片表面即得到正面电极。
步骤5、背面电极形成：
在基底层和背面接触件之间形成一第一钝化层和一隧道接触层，在钝化层和基底层之间装有一个由a-Si构成的本征层，钝化层由与基底层极性相同的掺杂材料构成。

Claims (5)

1.一种晶体硅太阳能电池的制作方法，其特征是：包括以下步骤：
步骤1、制备复合浆料：在液态铟镓合金中混合固态铜粉，搅拌均匀后得到复合浆料；
步骤2、制备选择性发射极：在硅片正面电极区域进行激光开槽；
步骤3、丝网印刷正面电极：用高准丝网印刷工艺在开槽区域印刷步骤1得到的复合浆料；
步骤4、低温烧结：在温度为300～400℃下进行烧结，形成正面电极；
步骤5、在基底层和背面接触件之间形成一第一钝化层和一隧道接触层，在钝化层和基底层之间装有一个由a-Si构成的本征层，钝化层由与基底层极性相同的掺杂材料构成。
2.根据权利要求1所述的晶体硅太阳能电池的制作方法，其特征是：所述的复合浆料中，铜粉的质量百分含量为60％～90％。
3.根据权利要求1或2所述的晶体硅太阳能电池的制作方法，其特征是：所述的铜粉的粒径为2微米～20微米。
4.根据权利要求1或2所述的晶体硅太阳能电池的制作方法，其特征是：所述的步骤1中，搅拌温度为160℃～220℃，搅拌时间为30分钟～300分钟。
5.根据权利要求1或2所述的晶体硅太阳能电池的制作方法，其特征是：所述的步骤2中，激光功率为10W～20W。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039546A (zh) * 2017-03-03 2017-08-11 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其制备方法、组件和系统
CN107093637A (zh) * 2017-03-03 2017-08-25 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其制备方法、组件和系统
CN110518084A (zh) * 2019-08-06 2019-11-29 苏州腾晖光伏技术有限公司 一种镓局域掺杂的perc电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080251117A1 (en) * 2005-03-14 2008-10-16 Markus Schubert Solar Cell
CN102185020A (zh) * 2011-03-29 2011-09-14 中国科学院宁波材料技术与工程研究所 一种晶体硅太阳能电池正面电极的制作方法
CN102456752A (zh) * 2010-11-04 2012-05-16 Q-电池公司 太阳能电池及太阳能电池制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080251117A1 (en) * 2005-03-14 2008-10-16 Markus Schubert Solar Cell
CN102456752A (zh) * 2010-11-04 2012-05-16 Q-电池公司 太阳能电池及太阳能电池制造方法
CN102185020A (zh) * 2011-03-29 2011-09-14 中国科学院宁波材料技术与工程研究所 一种晶体硅太阳能电池正面电极的制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039546A (zh) * 2017-03-03 2017-08-11 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其制备方法、组件和系统
CN107093637A (zh) * 2017-03-03 2017-08-25 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其制备方法、组件和系统
CN110518084A (zh) * 2019-08-06 2019-11-29 苏州腾晖光伏技术有限公司 一种镓局域掺杂的perc电池及其制备方法

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