DE69711565T2 - Vorrichtung und Verfahren zur Kristallzüchtung - Google Patents

Vorrichtung und Verfahren zur Kristallzüchtung

Info

Publication number
DE69711565T2
DE69711565T2 DE69711565T DE69711565T DE69711565T2 DE 69711565 T2 DE69711565 T2 DE 69711565T2 DE 69711565 T DE69711565 T DE 69711565T DE 69711565 T DE69711565 T DE 69711565T DE 69711565 T2 DE69711565 T2 DE 69711565T2
Authority
DE
Germany
Prior art keywords
growing crystals
crystals
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69711565T
Other languages
English (en)
Other versions
DE69711565D1 (de
Inventor
Thierry Duffar
Jacques Abadie
Pierre Dusserre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National dEtudes Spatiales CNES
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES, Commissariat a lEnergie Atomique CEA filed Critical Centre National dEtudes Spatiales CNES
Application granted granted Critical
Publication of DE69711565D1 publication Critical patent/DE69711565D1/de
Publication of DE69711565T2 publication Critical patent/DE69711565T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69711565T 1996-12-12 1997-12-10 Vorrichtung und Verfahren zur Kristallzüchtung Expired - Fee Related DE69711565T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9615280A FR2757184B1 (fr) 1996-12-12 1996-12-12 Dispositif et procede de cristallogenese

Publications (2)

Publication Number Publication Date
DE69711565D1 DE69711565D1 (de) 2002-05-08
DE69711565T2 true DE69711565T2 (de) 2002-10-31

Family

ID=9498599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69711565T Expired - Fee Related DE69711565T2 (de) 1996-12-12 1997-12-10 Vorrichtung und Verfahren zur Kristallzüchtung

Country Status (4)

Country Link
US (1) US5932005A (de)
EP (1) EP0848087B1 (de)
DE (1) DE69711565T2 (de)
FR (1) FR2757184B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2806100B1 (fr) * 2000-03-10 2002-09-20 Commissariat Energie Atomique Dispositif et procede de cristallogenese
FR2865740B1 (fr) 2004-01-30 2007-06-22 Centre Nat Rech Scient Procede et dispositif de fabrication de monocristaux
JP4533188B2 (ja) * 2005-03-03 2010-09-01 キヤノン株式会社 結晶製造装置および結晶製造方法
FR2927910B1 (fr) * 2008-02-27 2011-06-17 Centre Nat Rech Scient Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.
US9109299B1 (en) * 2011-03-30 2015-08-18 CapeSym, Inc. Solidification of high quality alloy semiconductors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345253A1 (fr) * 1976-03-23 1977-10-21 Radiotechnique Compelec Creuset pour la fabrication d'un lingot de materiau cristallin
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
FR2509637A1 (fr) * 1981-07-17 1983-01-21 Commissariat Energie Atomique Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite
US4668493A (en) * 1982-06-22 1987-05-26 Harry Levin Process for making silicon
FR2689524B1 (fr) * 1992-04-06 1994-05-13 Alcatel Alsthom Cie Gle Electric Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique.
US5391310A (en) * 1993-11-23 1995-02-21 Cincinnati Milacron Inc. Sulfurized aqueous machining fluid composition
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete

Also Published As

Publication number Publication date
EP0848087B1 (de) 2002-04-03
FR2757184A1 (fr) 1998-06-19
EP0848087A1 (de) 1998-06-17
FR2757184B1 (fr) 1999-02-26
DE69711565D1 (de) 2002-05-08
US5932005A (en) 1999-08-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee