DE69700740T2 - Verfahren und Vorrichtung zur Kristallziehung - Google Patents

Verfahren und Vorrichtung zur Kristallziehung

Info

Publication number
DE69700740T2
DE69700740T2 DE69700740T DE69700740T DE69700740T2 DE 69700740 T2 DE69700740 T2 DE 69700740T2 DE 69700740 T DE69700740 T DE 69700740T DE 69700740 T DE69700740 T DE 69700740T DE 69700740 T2 DE69700740 T2 DE 69700740T2
Authority
DE
Germany
Prior art keywords
crystal pulling
pulling
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69700740T
Other languages
English (en)
Other versions
DE69700740D1 (de
Inventor
Eiichi Iino
Makoto Iida
Masanori Kimura
Shozo Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69700740D1 publication Critical patent/DE69700740D1/de
Publication of DE69700740T2 publication Critical patent/DE69700740T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911Seed or rod holders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
DE69700740T 1996-09-26 1997-09-19 Verfahren und Vorrichtung zur Kristallziehung Expired - Lifetime DE69700740T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27541796A JP3598681B2 (ja) 1996-09-26 1996-09-26 単結晶の引上げ方法及び装置

Publications (2)

Publication Number Publication Date
DE69700740D1 DE69700740D1 (de) 1999-12-09
DE69700740T2 true DE69700740T2 (de) 2000-05-31

Family

ID=17555222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700740T Expired - Lifetime DE69700740T2 (de) 1996-09-26 1997-09-19 Verfahren und Vorrichtung zur Kristallziehung

Country Status (6)

Country Link
US (1) US5964941A (de)
EP (1) EP0834607B1 (de)
JP (1) JP3598681B2 (de)
KR (1) KR19980024977A (de)
DE (1) DE69700740T2 (de)
TW (1) TW385340B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19781966T1 (de) * 1996-09-03 1999-07-15 Sumitomo Sitix Corp Vorrichtung zum Ziehen von Einkristallen
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
US6238483B1 (en) 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
US6869477B2 (en) * 2000-02-22 2005-03-22 Memc Electronic Materials, Inc. Controlled neck growth process for single crystal silicon
WO2003021011A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
US20100242831A1 (en) * 2009-03-31 2010-09-30 Memc Electronic Materials, Inc. Methods for weighing a pulled object having a changing weight
CN106702475A (zh) * 2017-03-29 2017-05-24 天通吉成机器技术有限公司 单晶炉及其副室
CN114574952B (zh) * 2022-03-31 2023-07-28 中环领先(徐州)半导体材料有限公司 籽晶的提拉机构及其使用方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62288191A (ja) * 1986-06-06 1987-12-15 Kyushu Denshi Kinzoku Kk 単結晶成長方法及びその装置
JPH07515B2 (ja) * 1990-04-11 1995-01-11 信越半導体株式会社 結晶引上装置
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
JPH07172981A (ja) * 1993-12-14 1995-07-11 Komatsu Electron Metals Co Ltd 半導体単結晶の製造装置および製造方法
JPH08212055A (ja) * 1995-02-02 1996-08-20 Ricoh Co Ltd ビット検索器並びに中央演算処理装置
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置

Also Published As

Publication number Publication date
JP3598681B2 (ja) 2004-12-08
JPH10101473A (ja) 1998-04-21
EP0834607A1 (de) 1998-04-08
DE69700740D1 (de) 1999-12-09
US5964941A (en) 1999-10-12
KR19980024977A (ko) 1998-07-06
TW385340B (en) 2000-03-21
EP0834607B1 (de) 1999-11-03

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Legal Events

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