JPS5567599A - Strip crystal growing method - Google Patents

Strip crystal growing method

Info

Publication number
JPS5567599A
JPS5567599A JP14145078A JP14145078A JPS5567599A JP S5567599 A JPS5567599 A JP S5567599A JP 14145078 A JP14145078 A JP 14145078A JP 14145078 A JP14145078 A JP 14145078A JP S5567599 A JPS5567599 A JP S5567599A
Authority
JP
Japan
Prior art keywords
spaces
crystals
melt
die
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14145078A
Other languages
Japanese (ja)
Inventor
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP14145078A priority Critical patent/JPS5567599A/en
Publication of JPS5567599A publication Critical patent/JPS5567599A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simultaneously grow a plurality of strip crystals by one operation at a low cost by using a die having separation type vertical spaces arranged in rows and by contacting the same no. of seed crystals to a melt in the spaces.
CONSTITUTION: Die 8 having separation type vertical spaces 6, 7 in two rows is formed by fixing two-pair four plates 9 made of high purity graphite through washer-shape spacers made of the same material with screws made of the same material. The top of each plate 9 is tapered by grinding by 30° in the tangential direction. The spacers in spaces 6, 7 are 0.3mm thick, and the spacer in the space between the two pairs of plates 9 has a suitable thickness. Die 8 is set on the bottom of crucible 1, and single crystal raw material is charged into crucible 1 and heat melted. When melt L rises in spaces 6, 7, operation rods 3, 3 holding seed crystals 4 are lowered to contact the lower ends of crystals 4 to melt L in spaces 6, 7, and rods 3, 3 are gently pulled to grow strip crystals 5, 5.
COPYRIGHT: (C)1980,JPO&Japio
JP14145078A 1978-11-16 1978-11-16 Strip crystal growing method Pending JPS5567599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14145078A JPS5567599A (en) 1978-11-16 1978-11-16 Strip crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14145078A JPS5567599A (en) 1978-11-16 1978-11-16 Strip crystal growing method

Publications (1)

Publication Number Publication Date
JPS5567599A true JPS5567599A (en) 1980-05-21

Family

ID=15292193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14145078A Pending JPS5567599A (en) 1978-11-16 1978-11-16 Strip crystal growing method

Country Status (1)

Country Link
JP (1) JPS5567599A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504613A (en) * 2002-10-30 2006-02-09 エバーグリーン ソーラー， インコーポレイテッド Method and apparatus for growing multiple crystal ribbons from a single crucible
WO2016043176A1 (en) * 2014-09-19 2016-03-24 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing same
JP2016060692A (en) * 2016-01-14 2016-04-25 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing the same
WO2017038745A1 (en) * 2015-09-04 2017-03-09 並木精密宝石株式会社 Plurality of sapphire single crystals and production method for same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504613A (en) * 2002-10-30 2006-02-09 エバーグリーン ソーラー， インコーポレイテッド Method and apparatus for growing multiple crystal ribbons from a single crucible
WO2016043176A1 (en) * 2014-09-19 2016-03-24 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing same
JP5895280B1 (en) * 2014-09-19 2016-03-30 並木精密宝石株式会社 Method for producing a plurality of sapphire single crystals
WO2017038745A1 (en) * 2015-09-04 2017-03-09 並木精密宝石株式会社 Plurality of sapphire single crystals and production method for same
JP2016060692A (en) * 2016-01-14 2016-04-25 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing the same

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