ATE27312T1 - Verfahren zur hydrothermalen kristallzuechtung. - Google Patents

Verfahren zur hydrothermalen kristallzuechtung.

Info

Publication number
ATE27312T1
ATE27312T1 AT82111337T AT82111337T ATE27312T1 AT E27312 T1 ATE27312 T1 AT E27312T1 AT 82111337 T AT82111337 T AT 82111337T AT 82111337 T AT82111337 T AT 82111337T AT E27312 T1 ATE27312 T1 AT E27312T1
Authority
AT
Austria
Prior art keywords
berlinite
crystals
nutrient
large single
grown
Prior art date
Application number
AT82111337T
Other languages
English (en)
Inventor
Bruce Huai-Tzu Chai
Ernest Buehler
John James Flynn
Original Assignee
Allied Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Corp filed Critical Allied Corp
Application granted granted Critical
Publication of ATE27312T1 publication Critical patent/ATE27312T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/16—Oxyacids of phosphorus; Salts thereof
    • C01B25/26—Phosphates
    • C01B25/36—Aluminium phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT82111337T 1982-01-06 1982-12-07 Verfahren zur hydrothermalen kristallzuechtung. ATE27312T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/337,231 US4481069A (en) 1981-01-30 1982-01-06 Hydrothermal crystal growing process
EP82111337A EP0084115B1 (de) 1982-01-06 1982-12-07 Verfahren zur hydrothermalen Kristallzüchtung

Publications (1)

Publication Number Publication Date
ATE27312T1 true ATE27312T1 (de) 1987-06-15

Family

ID=23319665

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82111337T ATE27312T1 (de) 1982-01-06 1982-12-07 Verfahren zur hydrothermalen kristallzuechtung.

Country Status (6)

Country Link
US (1) US4481069A (de)
EP (1) EP0084115B1 (de)
JP (1) JPS58125694A (de)
AT (1) ATE27312T1 (de)
CA (1) CA1212600A (de)
DE (1) DE3276378D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559165B1 (fr) * 1984-02-08 1993-01-29 Centre Nat Rech Scient Procede de croissance de cristaux de compose a solubilite retrograde et dispositif pour sa mise en oeuvre
FR2559166B1 (fr) * 1984-02-08 1986-06-13 Centre Nat Rech Scient Procede de croissance de cristaux d'arseniate d'aluminium
FR2595344B1 (fr) * 1986-03-04 1988-06-24 Centre Nat Rech Scient Procede de preparation de cristaux de berlinite a haut coefficient de surtension
AT395439B (de) * 1987-09-04 1992-12-28 Avl Verbrennungskraft Messtech Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
US4927614A (en) * 1988-02-19 1990-05-22 The Dow Chemical Company Process for growing berlinite crystals
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
AT401837B (de) * 1993-03-04 1996-12-27 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement
US6767520B2 (en) * 2001-08-22 2004-07-27 Hosokawa Bepex Corporation Cooling system for polymer processing
JP4249502B2 (ja) * 2003-02-04 2009-04-02 日本電波工業株式会社 圧電結晶材料及び圧電振動子
JP4276627B2 (ja) * 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 単結晶育成用圧力容器およびその製造方法
US8236102B1 (en) * 2008-01-30 2012-08-07 Solid State Scientific Corporation Hydrothermal methods of fabricating trivalent-metal-ion-doped sapphire crystals
JP6118593B2 (ja) * 2013-03-12 2017-04-19 日立造船株式会社 両端開閉自在な耐圧反応器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2675303A (en) * 1950-04-11 1954-04-13 Clevite Corp Method and apparatus for growing single crystals of quartz
US4247358A (en) * 1979-06-08 1981-01-27 The United States Of America As Represented By The Secretary Of The Army Method of growing single crystals of alpha aluminum phosphate
US4300979A (en) * 1980-11-03 1981-11-17 Bell Telephone Laboratories, Incorporated Growth of AlPO4 crystals
US4324773A (en) * 1981-01-30 1982-04-13 Allied Corporation Hydrothermal process and apparatus for synthesizing crystalline powders
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus

Also Published As

Publication number Publication date
US4481069A (en) 1984-11-06
EP0084115B1 (de) 1987-05-20
CA1212600A (en) 1986-10-14
EP0084115A2 (de) 1983-07-27
EP0084115A3 (en) 1985-05-15
JPS58125694A (ja) 1983-07-26
DE3276378D1 (en) 1987-06-25

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