ATE47433T1 - Verfahren zur zuechtung eines grossen einkristalls aus mehrfachen keimkristallen. - Google Patents

Verfahren zur zuechtung eines grossen einkristalls aus mehrfachen keimkristallen.

Info

Publication number
ATE47433T1
ATE47433T1 AT84101856T AT84101856T ATE47433T1 AT E47433 T1 ATE47433 T1 AT E47433T1 AT 84101856 T AT84101856 T AT 84101856T AT 84101856 T AT84101856 T AT 84101856T AT E47433 T1 ATE47433 T1 AT E47433T1
Authority
AT
Austria
Prior art keywords
single crystal
large single
planar surface
growing
seed crystals
Prior art date
Application number
AT84101856T
Other languages
English (en)
Inventor
Bruce H T Chai
Ernest Buehler
John J Flynn
Robert C Morris
Original Assignee
Allied Signal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Signal Inc filed Critical Allied Signal Inc
Application granted granted Critical
Publication of ATE47433T1 publication Critical patent/ATE47433T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT84101856T 1983-04-28 1984-02-22 Verfahren zur zuechtung eines grossen einkristalls aus mehrfachen keimkristallen. ATE47433T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/489,450 US4578146A (en) 1983-04-28 1983-04-28 Process for growing a large single crystal from multiple seed crystals
EP84101856A EP0123809B1 (de) 1983-04-28 1984-02-22 Verfahren zur Züchtung eines grossen Einkristalls aus mehrfachen Keimkristallen

Publications (1)

Publication Number Publication Date
ATE47433T1 true ATE47433T1 (de) 1989-11-15

Family

ID=23943915

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84101856T ATE47433T1 (de) 1983-04-28 1984-02-22 Verfahren zur zuechtung eines grossen einkristalls aus mehrfachen keimkristallen.

Country Status (6)

Country Link
US (1) US4578146A (de)
EP (1) EP0123809B1 (de)
JP (1) JPS59207900A (de)
AT (1) ATE47433T1 (de)
CA (1) CA1223799A (de)
DE (1) DE3480218D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2595344B1 (fr) * 1986-03-04 1988-06-24 Centre Nat Rech Scient Procede de preparation de cristaux de berlinite a haut coefficient de surtension
DE3870812D1 (de) * 1987-11-11 1992-06-11 Avl Verbrennungskraft Messtech Verfahren zur verringerung des wassergehaltes in piezoelektrischen galliumphosphat-kristallelementen.
AT393182B (de) * 1987-11-11 1991-08-26 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement und verfahren zur herstellung
US4927614A (en) * 1988-02-19 1990-05-22 The Dow Chemical Company Process for growing berlinite crystals
FR2676753B1 (fr) * 1991-05-24 1993-10-01 France Telecom Procede d'accroissement des dimensions des cristaux elaborables par croissance hydrothermale, utilisant un germe obtenu par assemblage de lames cristallines.
FR2678921B1 (fr) * 1991-07-11 1994-05-13 Etat Francais Delegue Armement Procede de croissance de cristaux de phosphate de gallium a partir de germes dans une solution acide de phosphate de gallium, et les cristaux obtenus.
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
AT401837B (de) * 1993-03-04 1996-12-27 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement
AT408456B (de) * 1999-12-28 2001-12-27 Avl List Gmbh Verfahren zum züchten von einkristallen
JP4249502B2 (ja) * 2003-02-04 2009-04-02 日本電波工業株式会社 圧電結晶材料及び圧電振動子
US6979938B2 (en) * 2003-06-18 2005-12-27 Xerox Corporation Electronic device formed from a thin film with vertically oriented columns with an insulating filler material
US8236102B1 (en) * 2008-01-30 2012-08-07 Solid State Scientific Corporation Hydrothermal methods of fabricating trivalent-metal-ion-doped sapphire crystals
KR100966306B1 (ko) * 2008-05-19 2010-06-28 김판채 고순도 바이오에탄올 추출용 3가금속 오르토인산염분리막과 담체 및 그 제조방법과 이에 의한 고순도바이오에탄올의 제조방법
CN105518188B (zh) 2013-08-29 2020-06-26 株式会社村田制作所 人造水晶的培育方法
AT524249B1 (de) * 2020-09-28 2023-07-15 Ebner Ind Ofenbau Verfahren zum Züchten von Einkristallen
AT524248B1 (de) 2020-09-28 2023-07-15 Ebner Ind Ofenbau Verfahren zur Züchtung von Kristallen
AT524237B1 (de) 2020-09-28 2022-04-15 Ebner Ind Ofenbau Vorrichtung zur Siliziumcarbideinkristall-Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2914389A (en) * 1955-05-27 1959-11-24 Clevite Corp Method for growing quartz
US2931712A (en) * 1955-05-27 1960-04-05 Clevite Corp Method of growing synthetic quartz
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus
US4469160A (en) * 1981-12-23 1984-09-04 United Technologies Corporation Single crystal solidification using multiple seeds

Also Published As

Publication number Publication date
EP0123809A3 (en) 1986-06-11
EP0123809B1 (de) 1989-10-18
DE3480218D1 (en) 1989-11-23
EP0123809A2 (de) 1984-11-07
CA1223799A (en) 1987-07-07
JPS59207900A (ja) 1984-11-26
US4578146A (en) 1986-03-25

Similar Documents

Publication Publication Date Title
ATE47433T1 (de) Verfahren zur zuechtung eines grossen einkristalls aus mehrfachen keimkristallen.
ATE18261T1 (de) Verfahren zur hydrothermal-kristallzuechtung und vorrichtung.
GB1213867A (en) Method of manufacturing silicon carbide single crystal filaments
DE3177241D1 (de) Verfahren und vorrichtung zum bilden und wachsen eines einzelkristalles einer halbleiterverbindung.
CA2055400A1 (en) Method of forming crystal
ATE208654T1 (de) Diamant-züchtung
SE8302850D0 (sv) Fasttillstandsframstellning av ett flertal enkristallforemal
DE60313871D1 (de) Verfahren und umgebung für die zucht von pflanzen
Slifkin et al. The effect of salts and organic solutes on the migration time of the slime mold Dictyostelium discoideum
ATE27312T1 (de) Verfahren zur hydrothermalen kristallzuechtung.
FI99025C (fi) Menetelmä entsyymikiteiden kasvattamiseksi
EP1201793A4 (de) Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen
ATE44428T1 (de) Verfahren zur befoerderung der regeneration von pflanzen aus gewebekulturen.
US2546305A (en) Method of and means for growing crystals
US2472303A (en) Method of growing crystals
JPS534778A (en) Crystal growth method with molecular beam
JPS60176226A (ja) 半導体液相エピタキシアル成長装置
Airò et al. Temporary immersion system: an efficient technique to improve the Plumeria rubra L. scale-up
JPS61231921A (ja) 種子類の磁気的処理方法
RU95114398A (ru) Подложка для зародышеобразования и выращивания монокристаллического 3c-карбида кремния
JPS5262698A (en) Working method of garnet crystal
JPS5365300A (en) Method of growing single crystal epitaxial layer on substrate and basic holder used in this method
FEIGELSON Phase equilibrium and crystal growth studies on AgGaSe 2 and related nonlinear optical materials(Progress Report, 1 Jul.- 31 Dec. 1987)
Muradyan et al. Dislocation loops in lithium iodate single crystals
KR900001653B1 (en) Semiconductor device manufacturing method having selectional growth of metal of metal silicide

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties