JPS5585499A - Artificial rock crystal growing method - Google Patents

Artificial rock crystal growing method

Info

Publication number
JPS5585499A
JPS5585499A JP15666078A JP15666078A JPS5585499A JP S5585499 A JPS5585499 A JP S5585499A JP 15666078 A JP15666078 A JP 15666078A JP 15666078 A JP15666078 A JP 15666078A JP S5585499 A JPS5585499 A JP S5585499A
Authority
JP
Japan
Prior art keywords
crystal
autoclave
dislocation
rock crystal
artificial rock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15666078A
Other languages
Japanese (ja)
Inventor
Shogo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15666078A priority Critical patent/JPS5585499A/en
Publication of JPS5585499A publication Critical patent/JPS5585499A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable artificial rock crystal to be evaluated without carrying out destructive inspection by growing the crystal in an autoclave by hydrothermal synthetic reaction and successively heat treating it while holding the internal temp. of the autoclave at below the α-β transformation point of rock crystal.
CONSTITUTION: Artificial rock crystal is grown in an autoclave by hydrothermal synthesis reaction, and the internal temp. of the autoclave is held at below the α-β transformation point of rock crystal, that is, 573°C. By holding the temp. the grown crystal beings to be dissolved like raw material work crystal, and an outermost layer of the crystal is etched to turn linear defect portions into etched tunnels, whereby dislocation can be observed directly with the eye. Thus, the dislocation qualities of all of the crystal can be evaluated immediately after growing, resulting in omission of an evaluation process of a conventional method for confirming dislocation.
COPYRIGHT: (C)1980,JPO&Japio
JP15666078A 1978-12-15 1978-12-15 Artificial rock crystal growing method Pending JPS5585499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15666078A JPS5585499A (en) 1978-12-15 1978-12-15 Artificial rock crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15666078A JPS5585499A (en) 1978-12-15 1978-12-15 Artificial rock crystal growing method

Publications (1)

Publication Number Publication Date
JPS5585499A true JPS5585499A (en) 1980-06-27

Family

ID=15632503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15666078A Pending JPS5585499A (en) 1978-12-15 1978-12-15 Artificial rock crystal growing method

Country Status (1)

Country Link
JP (1) JPS5585499A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010069578A (en) * 2001-04-18 2001-07-25 이덕호 Method for growing the zy-quartz crystal
KR20010107516A (en) * 2000-12-22 2001-12-07 이덕호 Method for growing the zy-quartz crystal
KR20010107515A (en) * 2000-12-22 2001-12-07 이덕호 Method for growing the r-crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010107516A (en) * 2000-12-22 2001-12-07 이덕호 Method for growing the zy-quartz crystal
KR20010107515A (en) * 2000-12-22 2001-12-07 이덕호 Method for growing the r-crystal
KR20010069578A (en) * 2001-04-18 2001-07-25 이덕호 Method for growing the zy-quartz crystal

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