JPS5585499A - Artificial rock crystal growing method - Google Patents
Artificial rock crystal growing methodInfo
- Publication number
- JPS5585499A JPS5585499A JP15666078A JP15666078A JPS5585499A JP S5585499 A JPS5585499 A JP S5585499A JP 15666078 A JP15666078 A JP 15666078A JP 15666078 A JP15666078 A JP 15666078A JP S5585499 A JPS5585499 A JP S5585499A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- autoclave
- dislocation
- rock crystal
- artificial rock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To enable artificial rock crystal to be evaluated without carrying out destructive inspection by growing the crystal in an autoclave by hydrothermal synthetic reaction and successively heat treating it while holding the internal temp. of the autoclave at below the α-β transformation point of rock crystal.
CONSTITUTION: Artificial rock crystal is grown in an autoclave by hydrothermal synthesis reaction, and the internal temp. of the autoclave is held at below the α-β transformation point of rock crystal, that is, 573°C. By holding the temp. the grown crystal beings to be dissolved like raw material work crystal, and an outermost layer of the crystal is etched to turn linear defect portions into etched tunnels, whereby dislocation can be observed directly with the eye. Thus, the dislocation qualities of all of the crystal can be evaluated immediately after growing, resulting in omission of an evaluation process of a conventional method for confirming dislocation.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15666078A JPS5585499A (en) | 1978-12-15 | 1978-12-15 | Artificial rock crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15666078A JPS5585499A (en) | 1978-12-15 | 1978-12-15 | Artificial rock crystal growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585499A true JPS5585499A (en) | 1980-06-27 |
Family
ID=15632503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15666078A Pending JPS5585499A (en) | 1978-12-15 | 1978-12-15 | Artificial rock crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585499A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010069578A (en) * | 2001-04-18 | 2001-07-25 | 이덕호 | Method for growing the zy-quartz crystal |
KR20010107516A (en) * | 2000-12-22 | 2001-12-07 | 이덕호 | Method for growing the zy-quartz crystal |
KR20010107515A (en) * | 2000-12-22 | 2001-12-07 | 이덕호 | Method for growing the r-crystal |
-
1978
- 1978-12-15 JP JP15666078A patent/JPS5585499A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010107516A (en) * | 2000-12-22 | 2001-12-07 | 이덕호 | Method for growing the zy-quartz crystal |
KR20010107515A (en) * | 2000-12-22 | 2001-12-07 | 이덕호 | Method for growing the r-crystal |
KR20010069578A (en) * | 2001-04-18 | 2001-07-25 | 이덕호 | Method for growing the zy-quartz crystal |
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