JPS55109300A - Evaluation of insb single crystal - Google Patents
Evaluation of insb single crystalInfo
- Publication number
- JPS55109300A JPS55109300A JP1388579A JP1388579A JPS55109300A JP S55109300 A JPS55109300 A JP S55109300A JP 1388579 A JP1388579 A JP 1388579A JP 1388579 A JP1388579 A JP 1388579A JP S55109300 A JPS55109300 A JP S55109300A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- bands
- grown
- insb
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make it possible to grow a crystal for observing grown bands within the routine of the actual production of devices, by employing as a dope an impurity which does not affect the carrier concentration.
CONSTITUTION: In growing an InSb crystal by a pulling method, InP or InS is added as a dope and the crystal is pulled in the direction of (211). Then, the crystal is cut across (111) surface, parallel to the direction of the pulling. The cut-off surface is mirror-finished, washed with water and then etched, forming grown bands. The InSb single crystal is evaluated by observation of the bunds. In the above etching treatment, a simple etching solution of a HF-H2O2-H2O system can give satisfactory grown bands.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1388579A JPS55109300A (en) | 1979-02-09 | 1979-02-09 | Evaluation of insb single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1388579A JPS55109300A (en) | 1979-02-09 | 1979-02-09 | Evaluation of insb single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55109300A true JPS55109300A (en) | 1980-08-22 |
Family
ID=11845649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1388579A Pending JPS55109300A (en) | 1979-02-09 | 1979-02-09 | Evaluation of insb single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55109300A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297500A (en) * | 1988-10-05 | 1990-04-10 | Sumitomo Electric Ind Ltd | Gaas single crystal specular wafer and its production |
| CN102154705A (en) * | 2011-03-15 | 2011-08-17 | 上海大学 | Preparation method of indium antimonide nanocrystal |
| CN108166060A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of indium antimonide<211>The preparation method of direction monocrystalline |
| CN108166061A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of method for reducing Insb Single Crystals dislocation |
| CN109280978A (en) * | 2018-11-29 | 2019-01-29 | 云南北方昆物光电科技发展有限公司 | A kind of preparation method of low dislocation indium antimonide<111>direction monocrystalline |
-
1979
- 1979-02-09 JP JP1388579A patent/JPS55109300A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297500A (en) * | 1988-10-05 | 1990-04-10 | Sumitomo Electric Ind Ltd | Gaas single crystal specular wafer and its production |
| CN102154705A (en) * | 2011-03-15 | 2011-08-17 | 上海大学 | Preparation method of indium antimonide nanocrystal |
| CN108166060A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of indium antimonide<211>The preparation method of direction monocrystalline |
| CN108166061A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of method for reducing Insb Single Crystals dislocation |
| CN109280978A (en) * | 2018-11-29 | 2019-01-29 | 云南北方昆物光电科技发展有限公司 | A kind of preparation method of low dislocation indium antimonide<111>direction monocrystalline |
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